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    • 21. 发明授权
    • Magnetoresistive element including a yoke that surrounds a conductor, magnetic memory cell and magnetic memory device including the same
    • 包括围绕导体的磁轭的磁阻元件,磁存储单元和包括其的磁存储器件
    • US07002840B2
    • 2006-02-21
    • US10967297
    • 2004-10-19
    • Akifumi KamijimaKoji ShmazawaHitoshi Hatate
    • Akifumi KamijimaKoji ShmazawaHitoshi Hatate
    • G11C11/15
    • G11C11/16
    • The present invention provides a magnetic memory device capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in write lines and having a high degree of flexibility in designing. A magneto-resistive element has: a magnetic yoke disposed annularly in a circumferential direction so as to surround a write word line and a write bit line, and having a pair of open ends facing each other while sandwiching a gap provided in a part in the circumferential direction; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field and a pair of end faces. The stacked body is disposed in the gap so that each of the pair of end faces and each of the pair of open ends face each other. With the configuration, magnetization of the second magnetic layer can be efficiently inverted and, as compared with the case where the stacked body and the magnetic yoke are in contact with each other, the material of the stacked body can be selected from a wider range and the magnetic and electric performances of the stacked body can be sufficiently displayed.
    • 本发明提供一种能够通过有效地利用在写入线中流动的电流产生的磁场并且在设计中具有高度的灵活性来稳定执行信息写入操作的磁存储器件。 磁阻元件具有:环绕圆周方向设置的磁轭,以便围绕写入字线和写入位线,并且具有一对彼此相对的开放端,同时夹着设置在所述第一部分中的部分的间隙 圆周方向 以及包括其磁化方向根据外部磁场而变化的第二磁性层和一对端面的层叠体。 叠层体设置在间隙中,使得一对端面和一对开口端中的每一个彼此面对。 利用该结构,可以有效地反转第二磁性层的磁化,并且与堆叠体和磁轭相互接触的情况相比,层叠体的材料可以从更宽的范围内选择, 可以充分地显示堆叠体的磁性和电气性能。
    • 22. 发明申请
    • Magnetoresistive element, magnetic memory cell, and magnetic memory device
    • 磁阻元件,磁存储单元和磁存储器件
    • US20050117386A1
    • 2005-06-02
    • US10967297
    • 2004-10-19
    • Akifumi KamijimaKoji ShimazawaHitoshi Hatate
    • Akifumi KamijimaKoji ShimazawaHitoshi Hatate
    • G11C11/15G11C11/16H01L21/8246H01L27/105H01L43/08G11C11/14
    • G11C11/16
    • The present invention provides a magnetic memory device capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in write lines and having a high degree of flexibility in designing. A magneto-resistive element has: a magnetic yoke disposed annularly in a circumferential direction so as to surround a write word line and a write bit line, and having a pair of open ends facing each other while sandwiching a gap provided in a part in the circumferential direction; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field and a pair of end faces. The stacked body is disposed in the gap so that each of the pair of end faces and each of the pair of open ends face each other. With the configuration, magnetization of the second magnetic layer can be efficiently inverted and, as compared with the case where the stacked body and the magnetic yoke are in contact with each other, the material of the stacked body can be selected from a wider range and the magnetic and electric performances of the stacked body can be sufficiently displayed.
    • 本发明提供一种能够通过有效地利用在写入线中流动的电流产生的磁场并且在设计中具有高度的灵活性来稳定执行信息写入操作的磁存储器件。 磁阻元件具有:环绕圆周方向设置的磁轭,以便围绕写入字线和写入位线,并且具有一对彼此相对的开口端,同时将设置在其中的部分中的间隙夹在 圆周方向 以及包括其磁化方向根据外部磁场而变化的第二磁性层和一对端面的层叠体。 叠层体设置在间隙中,使得一对端面和一对开口端中的每一个彼此面对。 利用该结构,可以有效地反转第二磁性层的磁化,并且与堆叠体和磁轭相互接触的情况相比,层叠体的材料可以从更宽的范围内选择, 可以充分地显示堆叠体的磁性和电气性能。
    • 27. 发明申请
    • Magnetoresistive element, magnetic memory cell, and magnetic memory device
    • 磁阻元件,磁存储单元和磁存储器件
    • US20050052899A1
    • 2005-03-10
    • US10934565
    • 2004-09-07
    • Hitoshi Hatate
    • Hitoshi Hatate
    • G11C11/15G11C11/16H01L21/8246H01L27/105H01L43/08G11C11/00
    • G11C11/16
    • The present invention provides a magnetic memory device capable of performing stable information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and stably holding written information. A magnetic memory device includes: magnetic yoke disposed in correspondence with a region in which a write bit line and a write word line cross each other and constructed so as to surround partially or entirely the periphery of the lines; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field, and magnetically coupled to the magnetic yoke. The second magnetic layer has coercive force larger than that of the magnetic yoke, and coercive force of the magnetic yoke increases toward the second magnetic layer. Thus, the influence by remanent magnetization of the magnetic yoke can be suppressed, and the magnetization direction of the second magnetic layer can be stably held.
    • 本发明提供一种能够通过有效地利用在导体中流动的电流产生的磁场来进行稳定的信息写入动作的磁存储装置,并稳定地保持书写信息。 磁存储器件包括:与写位线和写字线交叉的区域相对应设置的磁轭,其构造为部分或全部包围线的周边; 以及包括其磁化方向根据外部磁场而变化的第二磁性层并磁耦合到磁轭的层叠体。 第二磁性层具有大于磁轭的矫顽力,并且磁轭的矫顽力朝向第二磁性层增加。 因此,可以抑制磁轭的残余磁化的影响,并且可以稳定地保持第二磁性层的磁化方向。
    • 30. 发明授权
    • Magnetoresistive element, magnetic memory cell, and magnetic memory device
    • 磁阻元件,磁存储单元和磁存储器件
    • US07449760B2
    • 2008-11-11
    • US10934565
    • 2004-09-07
    • Hitoshi Hatate
    • Hitoshi Hatate
    • H01L29/82H01L43/00
    • G11C11/16
    • The present invention provides a magnetic memory device capable of performing stable information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and stably holding written information. A magnetic memory device includes: magnetic yoke disposed in correspondence with a region in which a write bit line and a write word line cross each other and constructed so as to surround partially or entirely the periphery of the lines; and a stacked body including a second magnetic layer of which magnetization direction changes according to an external magnetic field, and magnetically coupled to the magnetic yoke. The second magnetic layer has coercive force larger than that of the magnetic yoke, and coercive force of the magnetic yoke increases toward the second magnetic layer. Thus, the influence by remanent magnetization of the magnetic yoke can be suppressed, and the magnetization direction of the second magnetic layer can be stably held.
    • 本发明提供一种能够通过有效地利用在导体中流动的电流产生的磁场来进行稳定的信息写入动作的磁存储装置,并稳定地保持书写信息。 磁存储器件包括:与写位线和写字线交叉的区域相对应设置的磁轭,其构造为部分或全部包围线的周边; 以及包括其磁化方向根据外部磁场而变化的第二磁性层并磁耦合到磁轭的层叠体。 第二磁性层具有大于磁轭的矫顽力,并且磁轭的矫顽力朝向第二磁性层增加。 因此,可以抑制磁轭的残余磁化的影响,并且可以稳定地保持第二磁性层的磁化方向。