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21. 发明授权

US06908836B2 Method of implanting a substrate and an ion implanter for performing the method 有权
标题翻译：植入基板的方法和用于执行该方法的离子注入机
公开(公告)号：US06908836B2
公开(公告)日：2005-06-21
申请号：US10251780
申请日：2002-09-23
申请人： Adrian Murrell , Bernard Harrison , Peter Edwards , Peter Kindersley , Takao Sakase , Marvin Farley , Shu Satoh , Geoffrey Ryding
发明人： Adrian Murrell , Bernard Harrison , Peter Edwards , Peter Kindersley , Takao Sakase , Marvin Farley , Shu Satoh , Geoffrey Ryding
IPC分类号： G01N23/00 , H01J37/317 , H01L21/00 , H01L21/26 , H01L21/42
CPC分类号： H01J37/3171 , H01J2237/20228 , H01J2237/24507 , H01J2237/30488 , H01J2237/31703
摘要： An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
摘要翻译：注入器提供相对于注入束的衬底的二维扫描，使得光束在衬底上绘制扫描线的光栅。在离开衬底的周转点处测量束电流，并且使用电流值来控制随后的快速扫描速度，以补偿束电流中任何变化对慢扫描方向上的剂量均匀性的影响。扫描可以产生不相交的均匀间隔的平行扫描线的光栅，并且选择线之间的间隔以确保适当的剂量均匀性。

22. 发明申请

US20110042578A1 Ion beam monitoring arrangement 审中-公开
标题翻译：离子束监测装置
公开(公告)号：US20110042578A1
公开(公告)日：2011-02-24
申请号：US12926158
申请日：2010-10-28
申请人： Adrian Murrell , Bernard F. Harrison , Peter Edwards , Peter Kindersley , Robert Mitchell , Theodore Smick , Geoffrey Ryding , Marvin Farley , Takao Sakase
发明人： Adrian Murrell , Bernard F. Harrison , Peter Edwards , Peter Kindersley , Robert Mitchell , Theodore Smick , Geoffrey Ryding , Marvin Farley , Takao Sakase
IPC分类号： H01J3/26
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/30455 , H01J2237/31703
摘要： This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the flux and/or a cross-sectional profile of the ion beam used for implantation. It is often desirable to measure the flux and/or cross-sectional profile of an ion beam in an ion implanter in order to improve control of ion implantation of a semiconductor wafer or similar. The present invention describes adapting the wafer holder to allow such beam profiling to be performed. The substrate holder may be used progressively to occlude the ion beam from a downstream flux monitor or a flux monitor may be located on the wafer holder that is provided with a slit entrance aperture.
摘要翻译：本发明涉及用于离子注入机的离子束监测装置，其中期望监测用于植入的离子束的通量和/或横截面轮廓。通常期望在离子注入机中测量离子束的通量和/或横截面轮廓，以便改进对半导体晶片或类似物的离子注入的控制。本发明描述了适配晶片保持器以允许执行这种光束轮廓。衬底保持器可以逐渐地用于从下游通量监视器闭塞离子束，或者通量监视器可以位于设置有狭缝入口孔的晶片保持器上。

23. 发明申请

US20090166565A1 Ion implanters 有权
标题翻译：离子注入机
公开(公告)号：US20090166565A1
公开(公告)日：2009-07-02
申请号：US12003852
申请日：2008-01-02
申请人： Gregory Robert Alcott , Adrian Murrell , Matthew Castle , Martin Hilkene
发明人： Gregory Robert Alcott , Adrian Murrell , Matthew Castle , Martin Hilkene
IPC分类号： G21K5/00
CPC分类号： H01J37/3171 , H01J37/05 , H01J2237/0213 , H01J2237/022 , H01J2237/0268 , H01J2237/028 , H01J2237/24405 , H01J2237/31701 , H01J2237/31705
摘要： The present invention relates to components in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides such components with a chamber having an elongate slot opening defined by edges, and operating the ion implanter such that a central portion of the ion beam enters the component through the opening with the edges clipping at least a peripheral portion of the ion beam. The arrangement mitigates the problem of sputtered material escaping back out from the component and becoming entrained in the ion beam.
摘要翻译：本发明涉及离子注入机中的组件，其可以看到离子束的入射，例如光束倾倒或光束停止。这些组分将倾向于从它们的表面离子溅射材料，并且溅射的材料可能被夹带在离子束中。这种夹带的材料是污染源。本发明提供了这样一些组件，其具有由边缘限定的细长狭槽开口的腔室，并操作离子注入机，使得离子束的中心部分通过开口进入组件，边缘至少夹住离子的周边部分光束。该装置减轻了溅射材料从组件中退出并被夹带在离子束中的问题。

24. 发明授权

US07351986B2 Method and apparatus for reducing cross contamination of species during ion implantation 失效
标题翻译：离子注入过程中减少物种交叉污染的方法和装置
公开(公告)号：US07351986B2
公开(公告)日：2008-04-01
申请号：US10519623
申请日：2003-07-01
申请人： Adrian Murrell
发明人： Adrian Murrell
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3171 , H01J37/02 , H01J2237/0203 , H01J2237/022
摘要： A wafer support for an ion implanter includes a wafer holder and a support arm for the holder in the implant chamber. A portion of the support arm adjacent the wafer holder is at least intermittently exposed to the ion beam during implantation, as a result of the relative scanning of the ion beam and the wafer holder. An arm shield mechanism has a plurality of shielding surfaces which can be selectively disposed to receive the ion beam to protect the exposed portion of the support arm. The shielding surfaces may form a sleeve arranged over the arm which may be rotatable above the arm to present selected surfaces to the ion beam. Cross contamination when successively implanting different species can be reduced by presenting different shield surfaces to the beam.
摘要翻译：用于离子注入机的晶片支架包括用于植入室中的保持器的晶片保持器和支撑臂。作为离子束和晶片保持器的相对扫描的结果，在植入期间，与晶片保持器相邻的支撑臂的一部分至少间歇地暴露于离子束。臂屏蔽机构具有多个屏蔽表面，其可选择性地布置成接收离子束以保护支撑臂的暴露部分。屏蔽表面可以形成布置在臂上的套筒，其可以在臂上方旋转以将选定的表面提供给离子束。连续植入不同物种时的交叉污染可以通过向梁提供不同的屏蔽表面而减少。

25. 发明申请

US20060197016A1 Method of implanting a substrate and an ion implanter for performing the method 有权
公开(公告)号：US20060197016A1
公开(公告)日：2006-09-07
申请号：US11417027
申请日：2006-05-04
申请人： Adrian Murrell , Bernard Harrison , Peter Edwards , Peter Kindersley , Craig Lowrie , Peter Banks , Takao Sakase , Marvin Farley , Shu Satoh , Geoffrey Ryding
发明人： Adrian Murrell , Bernard Harrison , Peter Edwards , Peter Kindersley , Craig Lowrie , Peter Banks , Takao Sakase , Marvin Farley , Shu Satoh , Geoffrey Ryding
IPC分类号： H01J49/00
CPC分类号： H01J37/3171 , H01J37/3023 , H01J49/30 , H01J2237/20228 , H01J2237/20285 , H01J2237/24507 , H01J2237/2487 , H01J2237/30488 , H01J2237/31703 , H01J2237/31708 , H01L21/67005 , H01L21/68714 , H01L21/68764
摘要： An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

26. 发明申请

US20050173651A1 Cathode and counter-cathode arrangement in an ion source 审中-公开
标题翻译：离子源中的阴极和反阴极排列
公开(公告)号：US20050173651A1
公开(公告)日：2005-08-11
申请号：US10969786
申请日：2004-10-21
申请人： Richard Goldberg , Adrian Murrell
发明人： Richard Goldberg , Adrian Murrell
IPC分类号： G21K1/00 , G21K5/04 , H01J27/02 , H01J27/04 , H01J27/08 , H01J37/08 , H01J37/317 , H05H3/02 , H01J7/24 , C25B9/00
CPC分类号： H01J37/3171 , H01J27/08 , H01J37/08 , H01J2237/082
摘要： The present invention relates to ion sources comprising a cathode and a counter-cathode that are suitable for ion implanters. The present invention provides an ion source comprising a vacuum chamber; an arc chamber operable to generate and contain a plasma; a cathode operable to emit electrons into the arc chamber along an electron path; a counter-cathode disposed in the electron path; respective separate electrical connections from each of the cathode and the counter-cathode including respective vacuum feedthroughs to outside the vacuum chamber; and a voltage potential adjuster located outside the vacuum chamber that is connected at least to the counter-cathode via the vacuum feed-through and is operable to alter the potential of the counter-cathode relative to the cathode.
摘要翻译：本发明涉及包括适于离子注入机的阴极和对阴极的离子源。本发明提供了一种包括真空室的离子源; 可操作以产生和容纳等离子体的电弧室; 阴极，其可操作以沿着电子路径向电弧室发射电子; 设置在电子路径中的反向阴极; 从阴极和对阴极的每一个分别的电连接包括相应的真空馈通到真空室外部; 以及位于真空室外部的电压电位调节器，其经由真空馈通至少连接到反向阴极，并且可操作地改变对阴极相对于阴极的电位。

27. 发明申请

US20050082497A1 Ion implanter electrodes 有权
标题翻译：离子注入电极
公开(公告)号：US20050082497A1
公开(公告)日：2005-04-21
申请号：US10696782
申请日：2003-10-29
申请人： Richard Goldberg , David Armour , Christopher Burgess , Adrian Murrell
发明人： Richard Goldberg , David Armour , Christopher Burgess , Adrian Murrell
IPC分类号： G21K5/10 , H01J37/08 , H01J37/12 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/12 , H01J2237/04756 , H01J2237/121 , H01J2237/31701
摘要： Provided is an ion implanter having a deceleration lens assembly comprising a plurality of electrodes in which one or more of the apertures of the deceleration electrodes are shaped in a manner which can improve performance of the ion implanter. In one embodiment, an electrode aperture is generally elliptical in shape and conforms generally to the shape of the beam passing through the aperture. In another aspect, an axis segment extends 40% of the length of the aperture from the aperture center to an intermediate point at the end of the segment. The average width of the aperture measured at each point from the center to the intermediate point is substantially less than the maximum width of the aperture.
摘要翻译：提供了具有减速透镜组件的离子注入机，该减速透镜组件包括多个电极，其中减速电极的一个或多个孔径以能够提高离子注入机的性能的方式成形。在一个实施例中，电极孔的形状通常为椭圆形，并且通常符合通过孔的光束的形状。在另一方面，轴线段将孔的长度的40％从孔中心延伸到段末端的中间点。在从中心到中间点的每个点处测量的孔的平均宽度基本上小于孔的最大宽度。

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