专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20220276569A1 METHOD AND SYSTEM FOR DETERMINING INFORMATION ABOUT A TARGET STRUCTURE 有权
公开(公告)号：US20220276569A1
公开(公告)日：2022-09-01
申请号：US17629053
申请日：2020-07-17
申请人： ASML Netherlands B.V.
发明人： Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA , Keng-Fu CHANG , Simon Gijsbert Josephus MATHIJSSEN
IPC分类号： G03F7/20
摘要： Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.

22. 发明申请

US20220026809A1 METHOD FOR MONITORING LITHOGRAPHIC APPARATUS 有权
公开(公告)号：US20220026809A1
公开(公告)日：2022-01-27
申请号：US17291513
申请日：2019-10-15
申请人： ASML NETHERLANDS B.V.
发明人： Emil Peter SCHMITT-WEAVER , Kaustuve BHATTACHARYYA , Martin KERS
IPC分类号： G03F7/20 , G05B13/04
摘要： A method of determining a parameter of a lithographic apparatus, wherein the method includes providing first height variation data of a first substrate, providing first performance data of a first substrate, and determining a model based on the first height variation data and the first performance data. The method further includes obtaining second height variation data of a second substrate, inputting the second height variation data to the model, and determining second performance data of the second substrate by running the model. Based on the second performance data, the method determines a parameter of the apparatus.

23. 发明申请

US20200012198A1 DETERMINATION OF STACK DIFFERENCE AND CORRECTION USING STACK DIFFERENCE 审中-公开
公开(公告)号：US20200012198A1
公开(公告)日：2020-01-09
申请号：US16575711
申请日：2019-09-19
申请人： ASML NETHERLANDS B.V.
发明人： Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA
IPC分类号： G03F7/20 , G01N21/47 , G01N21/956
摘要： A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

24. 发明申请

US20180088470A1 METROLOGY RECIPE SELECTION 审中-公开
公开(公告)号：US20180088470A1
公开(公告)日：2018-03-29
申请号：US15706625
申请日：2017-09-15
申请人： ASML NETHERLANDS B.V.
发明人： Kaustuve BHATTACHARYYA , Arie Jeffrey DEN BOEF , Martin Jacobus Johan JAK
IPC分类号： G03F7/20 , G01B11/24 , G01B11/30 , G01N21/47
CPC分类号： G03F7/70633 , G01B11/24 , G01B11/30 , G01N21/47 , G01N21/88 , G02F2202/023 , G03F7/705 , G03F7/70641
摘要： A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.

25. 发明申请

US20180046737A1 METHOD AND APPARATUS FOR INSPECTION AND METROLOGY 审中-公开
公开(公告)号：US20180046737A1
公开(公告)日：2018-02-15
申请号：US15559759
申请日：2016-03-24
申请人： ASML Netherlands B.V.
发明人： Lotte Marloes WILLEMS , Kaustuve BHATTACHARYYA , Panagiotis Peter BINTEVINOS , Guangqing CHEN , Martin EBERT , Pieter Jacob Mathias Hendrik KNELISSEN , Stephen MORGAN , Maurits VAN DER SCHAAR , Leonardus Hericus Marie VERSTAPPEN , Jen-Shiang WANG , Peter Hanzen WARDENIER
IPC分类号： G06F17/50 , G03F7/20
CPC分类号： G06F17/5009 , G03F7/705 , G03F7/70625 , G03F7/70633 , G03F7/70683 , G03F9/7046 , G06F2217/16
摘要： A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

26. 发明申请

US20160313656A1 INSPECTION METHOD, LITHOGRAPHIC APPARATUS, MASK AND SUBSTRATE 有权
标题翻译：检验方法，光刻设备，掩模和基板
公开(公告)号：US20160313656A1
公开(公告)日：2016-10-27
申请号：US15104212
申请日：2014-11-20
申请人： ASML NETHERLANDS B.V.
发明人： Youri Johannes Laurentius Maria VAN DOMMELEN , Peter David ENGBLOM , Lambertus Gerardus Maria KESSELS , Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA , Paul Christiaan HINNEN , Marco Johannes Annemarie PIETERS
IPC分类号： G03F7/20
CPC分类号： G03F7/70641 , G03F7/70683
摘要： A method and apparatus for obtaining focus information relating to a lithographic process. The method includes illuminating a target, the target having alternating first and second structures, wherein the form of the second structures is focus dependent, while the form of the first structures does not have the same focus dependence as that of the second structures, and detecting radiation redirected by the target to obtain for that target an asymmetry measurement representing an overall asymmetry of the target, wherein the asymmetry measurement is indicative of focus of the beam forming the target. An associated mask for forming such a target, and a substrate having such a target.
摘要翻译：一种用于获得与光刻工艺相关的焦点信息的方法和装置。该方法包括照亮目标，目标具有交替的第一和第二结构，其中第二结构的形式是聚焦依赖的，而第一结构的形式不具有与第二结构相同的焦点依赖性，并且检测由目标重定向的辐射以为该目标获得表示目标的总体不对称性的不对称测量，其中不对称测量指示形成目标的波束的焦点。用于形成这种靶的相关掩模和具有这种靶的基片。

27. 发明申请

US20160179019A1 Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method 审中-公开
公开(公告)号：US20160179019A1
公开(公告)日：2016-06-23
申请号：US15057651
申请日：2016-03-01
申请人： ASML Netherlands B.V.
发明人： Maurits VAN DER SCHAAR , Patrick WARNAAR , Kaustuve BHATTACHARYYA , Hendrik Jan Hidde SMILDE , Michael KUBIS
IPC分类号： G03F9/00
CPC分类号： G03F9/7042 , G03F7/70616 , G03F7/70633 , G03F7/70683 , H01L23/544 , H01L23/58 , H01L2924/0002 , H01L2924/00
摘要： A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas.

28. 发明申请

US20160161863A1 METROLOGY METHOD, COMPUTER PRODUCT AND SYSTEM 审中-公开
标题翻译：计量方法，计算机产品和系统
公开(公告)号：US20160161863A1
公开(公告)日：2016-06-09
申请号：US14948001
申请日：2015-11-20
申请人： ASML NETHERLANDS B.V.
发明人： Arie Jeffrey DEN BOEF , Kaustuve BHATTACHARYYA
IPC分类号： G03F7/20 , G01B11/24 , G01B11/27
摘要： A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
摘要翻译：一种方法，包括从所述目标的测量值确定所述目标的结构不对称的类型，以及执行所述目标的光学测量的模拟以确定与所述不对称类型相关联的不对称参数的值。一种方法，包括执行目标的光学测量的模拟以确定与由所述目标的测量值确定的所述目标的结构不对称类型相关联的不对称参数的值，以及分析所述不对称参数在与目标相关联的目标形成参数。一种方法，包括使用由所述目标衍射的辐射的测量参数来确定目标的结构不对称参数，以及基于对目标形成参数中的变化最不敏感的所述结构不对称参数来确定所述目标的测量光束的特性与目标相关联。

29. 发明申请

US20160061589A1 METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
标题翻译：计量方法，目标和底物
公开(公告)号：US20160061589A1
公开(公告)日：2016-03-03
申请号：US14835504
申请日：2015-08-25
申请人： ASML NETHERLANDS B.V.
发明人： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/14
CPC分类号： G01B11/14 , G03F7/70633 , G03F7/70683
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
摘要翻译：具有至少第一子目标和至少第二子目标的衍射测量目标，并且其中（1）所述第一和第二子目标各自包括一对周期性结构，并且所述第一子目标具有不同的设计比第二子目标，不同的设计包括具有与第二子目标周期结构不同的间距，特征宽度，空间宽度和/或分割的第一子目标周期性结构，或（2）第一和第二子目标周期结构子目标分别包括第一层中的第一和第二周期性结构，并且第三周期性结构至少部分地位于第一层下面的第二层中的第一周期性结构下方，并且在第二层周期结构之下不存在周期性结构并且第四周期性结构至少部分地位于第二层下面的第三层中的第二周期性结构下方。

30. 发明公开

US20240168388A1 METHOD FOR INFERRING A LOCAL UNIFORMITY METRIC 审中-公开
公开(公告)号：US20240168388A1
公开(公告)日：2024-05-23
申请号：US18533109
申请日：2023-12-07
申请人： ASML Netherlands B.V.
发明人： Simon Gijsbert Josephus MATHIJSSEN , Kaustuve BHATTACHARYYA
IPC分类号： G03F7/00
CPC分类号： G03F7/70625
摘要： A method of inferring a value for at least one local uniformity metric relating to a product structure, the method including: obtaining intensity data including an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from the intensity image; determining, from the at least one intensity distribution, an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式