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21. 发明申请

US20080258044A1 Detection of Optical Radiation 有权
标题翻译：光辐射检测
公开(公告)号：US20080258044A1
公开(公告)日：2008-10-23
申请号：US12066863
申请日：2005-09-15
申请人： Olaf Schrey , Bedrich Hosticka , Werner Brockherde
发明人： Olaf Schrey , Bedrich Hosticka , Werner Brockherde
IPC分类号： H01L27/00
CPC分类号： H04N5/3575 , H04N5/3745 , H04N13/207 , H04N13/254
摘要： The central idea of the present invention is that a readout result of an optical detection unit which is based on accumulating photocharges can be improved when the charge carriers accumulated on a photodiode capacitance can be transferred to a readout capacitance before being read out by a readout unit, and when the state of the readout capacitance can be read out in a non-destructive manner by the readout unit, so that a noise portion in the readout signal can be corrected by reading out the readout capacitance during charge accumulation and again reading out the readout capacitance after the end of charge accumulation. Additionally, it becomes possible by the transfer to the readout capacitance to vary the sensitivity of the optical detection device within broad limits and to record a sequence of successive light pulses, without having to reset a photodiode before recording every single light pulse.
摘要翻译：本发明的中心思想在于，当在读出单元读出之前，当累积在光电二极管电容上的电荷载流子可以转移到读出电容时，可以提高基于积累光电荷的光学检测单元的读出结果，并且当读出电容的状态可以通过读出单元以非破坏性的方式读出时，使得读出信号中的噪声部分可以通过读出电荷累积期间的读出电容而被校正，并再次读出电荷累积结束后的读数电容。此外，通过转移到读出电容可以在宽范围内改变光学检测装置的灵敏度并记录连续的光脉冲序列，而不必在记录每个单个光脉冲之前复位光电二极管。

22. 发明申请

US20060214121A1 Distance sensor and method for detecting a distance 有权
标题翻译：距离传感器和距离检测方法
公开(公告)号：US20060214121A1
公开(公告)日：2006-09-28
申请号：US11410720
申请日：2006-04-25
申请人： Olaf Schrey , Werner Brockherde , Bedrich Hosticka
发明人： Olaf Schrey , Werner Brockherde , Bedrich Hosticka
IPC分类号： G01N21/86
CPC分类号： G01S7/481 , G01S7/4863 , G01S17/89 , G01S17/936
摘要： An indirect detection of the reflected radiation pulses, when measuring a distance by means of the photoeffect, allows considerably expanding the usability of the distance sensor and the distance measuring method, wherein the adaption to a new field of application only requires little design changes. Since in the external photoeffect the photoelectrons are ejected from the material irradiated photon by photon or quantum by quantum and the photons, when being ejected, only require a certain minimum energy and correspondingly the radiation used for irradiation only requires a sufficiently small wavelength, the external photoeffect allows detecting radiation over a large spectral range. When interferences occur in a certain wavelength range in a certain field of application, the operating wavelength range of the distance sensor technology may at first simply be set to another spectral range by using such an irradiation source having a spectrum outside the spectral range containing the interferences.
摘要翻译：当通过光效测量距离时，反射辐射脉冲的间接检测允许显着扩展距离传感器的可用性和距离测量方法，其中适应于新的应用领域仅需要很少的设计变化。由于在外部光电效应中，光电子通过光子或量子的量子从材料照射的光子中喷出，并且当被喷射时，光子仅需要一定的最小能量，相应地，用于照射的辐射仅需要足够小的波长，外部光电效应允许在大的光谱范围内检测辐射。当在某一应用领域中发生特定波长范围内的干扰时，距离传感器技术的工作波长范围可以首先通过使用具有包含干扰的光谱范围之外的光谱的照射源简单地设置到另一个光谱范围。

23. 发明授权

US06597025B2 Light sensitive semiconductor component 有权
公开(公告)号：US06597025B2
公开(公告)日：2003-07-22
申请号：US10095832
申请日：2002-03-12
申请人： Josef Lauter , Armin Kemna , Werner Brockherde , Ralf Hausschild
发明人： Josef Lauter , Armin Kemna , Werner Brockherde , Ralf Hausschild
IPC分类号： H01L2980
CPC分类号： H01L31/115 , H01L27/14643 , H01L31/03529 , H01L31/103 , Y02E10/50
摘要： The invention relates to a light-sensitive semiconductor component that consists of pixels (1), wherein n doped dot zones (7) are provided, in a preferably hexagonal pattern, on the surface of a p doped channel region, the dot zones (7) of a pixel (1) being electrically connected to one another by means of leads (6) and to a collecting lead (4). The dot zones (7) form parallel connected semiconductor diodes whereby minority charge carriers that are generated by the incidence of light in the channel region can be detected after having traveled to the dot zones (7) by diffusion. The described arrangement enables a high sensitivity to be achieved throughout the channel region and also a minimum capacitance of the semiconductor constructed by means of the CMOS technique. Diffusion of charge carriers out of a pixel is prevented by a guard ring (3) of an opposed type of doping.

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