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21. 发明授权

US4331710A Method of forming an insulation film on semiconductor device surface 失效
标题翻译：在半导体器件表面上形成绝缘膜的方法
公开(公告)号：US4331710A
公开(公告)日：1982-05-25
申请号：US212083
申请日：1980-09-08
申请人： Takao Nozaki , Takashi Ito
发明人： Takao Nozaki , Takashi Ito
IPC分类号： H01L21/318
CPC分类号： H01L21/3185 , Y10S148/112 , Y10S148/114
摘要： In a method of forming an insulating film on the surface of a silicon substrate, a silicon nitride film is formed on such surface by direct thermal nitridation. The nitridation is initially in an ambient gas of nitrogen whereby a comparatively thick silicon nitride film is formed. The ambient gas is then changed to ammonia or a mixture of an inert gas and ammonia to densify the silicon nitride film. The resultant film is useful as an insulating film in semiconductor devices, masks for impurity diffusion and selective oxidation in the manufacture thereof.
摘要翻译： PCT No.PCT / JP79 / 00039 Sec。 371日期1980年9月8日第 102（e）1980年9月8日PCT申请日1979年2月19日PCT公布。出版物WO80 / 01739 日本1980年8月21日。在硅衬底表面上形成绝缘膜的方法中，通过直接热氮化在这种表面上形成氮化硅膜。氮化最初处于氮气的环境气体中，由此形成较厚的氮化硅膜。然后将环境气体变为氨或惰性气体和氨的混合物以致密化氮化硅膜。所得膜可用作半导体器件中的绝缘膜，其制造中用于杂质扩散和选择性氧化的掩模。

22. 发明授权

US4282270A Method for forming an insulating film layer of silicon oxynitride on a semiconductor substrate surface 失效
标题翻译：在半导体衬底表面上形成氮氧化硅绝缘膜层的方法
公开(公告)号：US4282270A
公开(公告)日：1981-08-04
申请号：US84570
申请日：1979-10-15
申请人： Takao Nozaki , Takashi Ito
发明人： Takao Nozaki , Takashi Ito
IPC分类号： H01L21/318 , H01L21/314 , H01L21/316
CPC分类号： H01L21/3144 , Y10S438/909
摘要： An insulating film layer consisting of silicon oxynitride is formed on a silicon semiconductor substrate surface by bringing a surface of a silicon substrate into contact with an ammonia gas atmosphere containing a gas comprising containing substance gas, for example, oxygen gas, carbon dioxide gas, carbon monoxide gas, nitrogen monoxide gas, nitrogen dioxide gas, or water vapor, in a volume concentration of from 10.sup.2 to 10.sup.4 ppm in terms of molecular oxygen, at an elevated temperature, for example, of from 900.degree.to 1300.degree. C.
摘要翻译：通过使硅衬底的表面与包含含有物质气体的气体的氨气气氛例如氧气，二氧化碳气体，碳气体形成在硅半导体衬底表面上，形成由氮氧化硅组成的绝缘膜层一氧化碳气体，一氧化氮气体，二氧化氮气体或水蒸气，在分子氧方面的体积浓度为102〜104ppm，例如在900〜1300℃。

23. 发明授权

US06612290B2 Injector integrated module 失效
公开(公告)号：US06612290B2
公开(公告)日：2003-09-02
申请号：US09984220
申请日：2001-10-29
申请人： Takao Nozaki , Fumiyoshi Tanigawa
发明人： Takao Nozaki , Fumiyoshi Tanigawa
IPC分类号： F02M4100
CPC分类号： F02M69/465 , F02M51/005 , H05K1/189
摘要： The present invention provides an injector integrated module that can be easily incorporated at the engine body side and whose weight can be decreased, wherein respective injector members 10 are inserted into injector inserting holes 43 of a flexible wiring member 40, and the flexible wiring member 40 is held and fixed between a collar-shaped holding portion 20 formed at the outer circumferential portion of the respective injector members 10 and injector fixing members 30 externally fitted from the lower end portion of the respective injector members 10. And, respective lead-out connection end portions 41a of the flexible wiring member 40 are pressed to connection pieces 14 formed at one side portion of the injector members 10 in the respective injector fixing members 30, so that the lead-out connection end portions 41a are electrically connected to the connection pieces 14.

24. 发明授权

US06406615B1 Hydrotreating process for residual oil 失效
标题翻译：残油加氢处理
公开(公告)号：US06406615B1
公开(公告)日：2002-06-18
申请号：US09463387
申请日：2000-03-01
申请人： Ryuichiro Iwamoto , Takao Nozaki
发明人： Ryuichiro Iwamoto , Takao Nozaki
IPC分类号： C10G4504
CPC分类号： C10G49/002 , C10G45/04 , C10G65/04
摘要： The invention relates to a method of heavy oil hydrogenation, precisely to a method of heavy oil hydrogenation for which a part of the catalyst to be used is a regenerated catalyst, and concretely to a method of heavy oil denitrification and to a method of heavy of desulfurization. It is characterized in that heavy oil is passed through a layer of a regenerated catalyst or a layer containing a regenerated catalyst. With the specific catalyst disposition employed in the method, heavy oil can be well hydrogenated under the same conditions as those for ordinary heavy oil hydrogenation with fresh catalysts. The method is significantly effective for efficient utilization of used catalysts.
摘要翻译：本发明涉及一种重油加氢的方法，精确地涉及一种重油加氢方法，其中所用催化剂的一部分是再生催化剂，具体涉及一种重油脱氮方法，脱硫。其特征在于，重油通过再生催化剂层或含有再生催化剂的层。在该方法中使用的具体催化剂配置中，在与新鲜催化剂的普通重油氢化相同的条件下，重油可以很好地氢化。该方法对于有效利用所用催化剂是显着有效的。

25. 发明授权

US5405904A Connectors 失效
标题翻译：连接器
公开(公告)号：US5405904A
公开(公告)日：1995-04-11
申请号：US244627
申请日：1994-06-03
申请人： Fumitoshi Ikejiri , Katunari Nishimura , Takao Nozaki , Akira Nabeshima , Masamitsu Chishima
发明人： Fumitoshi Ikejiri , Katunari Nishimura , Takao Nozaki , Akira Nabeshima , Masamitsu Chishima
IPC分类号： C08L77/00 , C08L77/10 , H01B3/30 , H01B3/44 , H01R13/46 , H01R13/50 , H01R13/627 , C08G18/60
CPC分类号： H01R13/50 , C08L77/00 , C08L77/10 , H01B3/305 , H01B3/44 , H01R13/46 , H01R13/6272
摘要： The connector of the present invention has a housing formed from a polyamide resin composition which comprises 65-85% by weight of a specific polyamide (A), and 5-20% by weight of a graft-modified .alpha.-olefin random copolymer and/or graft-modified vinyl aromatic hydrocarbon/conjugated diene copolymer or a hydrogenation product thereof (B), and 0.1-1.0% by weight, based on 100% by weight of the total of the aromatic polyamide (A) and graft-modified copolymer (B), of a polyethylene wax or a metallic salt of an aliphatic carboxylic acid having 26-32 carbon atoms (C), and further, optionally, an antioxidant (D).An object of the present invention is to provide a connector which is free from a decrease in characteristics such as toughness by heating, and, in particular, can be formed with excellent moldability, and is light weight.
摘要翻译： PCT No.PCT / JP93 / 01429 Sec。 371日期：1994年6月3日 102（e）日期1994年6月3日PCT提交1993年10月5日PCT公布。出版物WO94 / 08363 日本1994年04月14日。本发明的连接器具有由聚酰胺树脂组合物形成的壳体，其包含65-85重量％的特定聚酰胺（A）和5-20重量％的接枝改性 α-烯烃无规共聚物和/或接枝改性的乙烯基芳烃/共轭二烯共聚物或其氢化产物（B），相对于芳族聚酰胺（A）的总量的100重量％为0.1-1.0重量％）和接枝改性共聚物（B），聚乙烯蜡或具有26-32个碳原子的C的脂族羧酸的金属盐（C），以及任选的抗氧化剂（D）。本发明的目的是提供一种连接器，其不会因加热而导致的韧性等特性的降低，特别是可以形成成型性优异，重量轻。

26. 发明授权

US5401186A Electrical connection element of connector for electric ribbon wire 失效
标题翻译：电线连接器用电连接元件
公开(公告)号：US5401186A
公开(公告)日：1995-03-28
申请号：US149279
申请日：1993-11-09
申请人： Takao Nozaki , Masamitsu Chishima
发明人： Takao Nozaki , Masamitsu Chishima
IPC分类号： H01R13/11 , H01R9/07 , H01R23/66
CPC分类号： H01R13/11
摘要： An electrical connection element is formed by stamping a plate having a thickness. A contact surface is formed at an edge surface of an end portion of the electrical connection element. The end edge portion is bent toward both lateral sides of the plate to form the contact surface. The lateral edge portions are offset towards opposite sides of the plate, so that the width between the opposite lateral edges is about twice the thickness of the plate. This edge surface is flat and smooth. Therefore, if the round conductor of a ribbon tape contacts any portion of the contact surface, a good electrical contact is obtained. Thus, the electrical connection element for contacting the side surface of the round conductor of the ribbon wire can be produced from a thin plate material.
摘要翻译：电连接元件通过冲压具有厚度的板形成。接触表面形成在电连接元件的端部的边缘表面处。端缘部分朝向板的两侧弯曲以形成接触表面。横向边缘部分朝向板的相对侧偏移，使得相对横向边缘之间的宽度为板的厚度的大约两倍。该边缘表面平整光滑。因此，如果带状带的圆形导体接触接触表面的任何部分，则获得良好的电接触。因此，用于接触带状导线的圆形导体的侧表面的电连接元件可以由薄板材料制成。

27. 发明授权

US5330369A Connector 失效
标题翻译：连接器
公开(公告)号：US5330369A
公开(公告)日：1994-07-19
申请号：US36234
申请日：1993-03-24
申请人： Takao Nozaki , Masamitsu Chishima
发明人： Takao Nozaki , Masamitsu Chishima
IPC分类号： H01R13/641 , H01R3/00
CPC分类号： H01R13/641
摘要： A connector is constructed such that the front half portions of a pair of connector housings each accommodating a terminal are coupled with each other, and are locked and connected together by means of a pair of locking members. This connector comprises a detecting spacer locked and connected to one of the pair of connector housings by means of another pair of locking members and a lock-releasing portion provided on the other connector housing for releasing locking between the detecting spacer and the one of the pair of connector housings when the other connector housing is properly coupled with the one of the pair of connector housings.
摘要翻译：连接器被构造成使得每个容纳端子的一对连接器壳体的前半部分彼此联接，并且通过一对锁定构件被锁定并连接在一起。该连接器包括通过另一对锁定构件锁定并连接到一对连接器壳体中的一个的检测间隔件，以及设置在另一个连接器壳体上的锁定释放部分，用于释放检测间隔件与该对中的一个之间的锁定当另一个连接器壳体与一对连接器壳体中的一个适当地联接时，连接器壳体的连接器壳体。

28. 发明授权

US4980307A Process for producing a semiconductor device having a silicon oxynitride insulative film 失效
标题翻译：一种具有氮氧化硅绝缘膜的半导体器件的制造方法
公开(公告)号：US4980307A
公开(公告)日：1990-12-25
申请号：US401489
申请日：1989-08-30
申请人： Takashi Ito , Takao Nozaki
发明人： Takashi Ito , Takao Nozaki
IPC分类号： H01L21/28 , H01L21/314 , H01L21/318 , H01L21/8242 , H01L27/108 , H01L29/51 , H01L21/265
CPC分类号： H01L21/28202 , H01L21/3144 , H01L21/3185 , H01L27/10805 , H01L27/1085 , H01L27/10873 , H01L29/51 , H01L29/511 , H01L21/28167 , Y10S148/043 , Y10S148/112 , Y10S148/114
摘要： An insulative film, such as SiO.sub.2, Si.sub.3 N.sub.4 and PSG films, for example, is commonly used the passivation film or gate electrode of MISFETs. Stability of the insulative films during the production or operation of the semiconductor devices is enhanced by providing an insulative film which is formed by nitridation, for example, in an NH.sub.3 gas, of an SiO.sub.2 film, preferably a directly thermally oxidized film of silicon. The insulative film according to the present invention is used for a gate insulation film in MISFETs, a capacitor or passivation film for semiconductor devices, and as a mask for selectively forming circuit elements of semiconductor devices. The process for forming the insulative film may comprise successive nitridation, oxidation and nitridation steps.

29. 发明授权

US4897042A Multiple junction device 失效
标题翻译：多重连接装置
公开(公告)号：US4897042A
公开(公告)日：1990-01-30
申请号：US207316
申请日：1988-06-15
申请人： Youji Saka , Takao Nozaki
发明人： Youji Saka , Takao Nozaki
IPC分类号： H01R4/24 , H01R9/03 , H01R9/24
CPC分类号： H01R9/031 , H01R4/2429 , H01R9/2458 , Y10S439/949
摘要： A connection tab for making contact with an electric wire at a wire contact, having a connecting end remote therefrom, and being offset from the wire contact in a direction longitudinal of and/or perpendicular to the electric wire.A junction device including a wiring board having a connection area and one or more electric wires to be connected. The wires are located beneath the wiring board and there is also provided one or more of the connection tabs. The junction device may have a plurality of wiring boards and the invention provides a very compact means for making a plurality of complex connections.

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