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21. 发明授权

US07217631B2 Semiconductor device and method for fabricating the device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07217631B2
公开(公告)日：2007-05-15
申请号：US11077212
申请日：2005-03-11
申请人： Tadatomo Suga
发明人： Tadatomo Suga
IPC分类号： H01L21/76 , H01L21/302
CPC分类号： H01L24/31 , H01L23/49827 , H01L23/49833 , H01L23/5226 , H01L25/0657 , H01L2224/05572 , H01L2224/80895 , H01L2224/9202 , H01L2225/06513 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01068 , H01L2924/09701 , H01L2924/12044 , H01L2924/15787 , H01L2924/19041 , H01L2224/05552 , H01L2924/00
摘要： There are provided a semiconductor device and method for fabricating the device capable of achieving reliable electrical connection by securely directly bonding conductors to each other even though bonding surfaces are polished by a CMP method and solid-state-bonded to each other. By polishing according to the CMP method, a through hole conductor 5 and a grounding wiring layer 10, which are made of copper, become concave in a dish-like shape and lowered in level, causing a dishing portion 17 since they have a hardness lower than that of a through hole insulator 11 made of silicon nitride. The through hole insulator 11 is selectively etched by a reactive ion etching method until the through hole insulator 11 comes to have a height equal to the height of a bottom portion 19 of the dishing portion 17 of the through hole conductor 5. The through hole conductors 5 and 25 are aligned with each other, and the bonding surfaces 12 and 22 are bonded to each other in a solid state bonding manner.
摘要翻译：提供了一种用于制造该器件的半导体器件和方法，该器件能够通过将导体彼此牢固地直接接合而实现可靠的电连接，即使通过CMP方法对CMP表面进行了抛光并且彼此固态接合。通过根据CMP方法进行研磨，由铜制成的通孔导体5和接地布线层10变成凹状，呈碗状，下降，导致凹陷部17由于硬度较低比由氮化硅制成的通孔绝缘体11的厚度大。通孔绝缘体11通过反应离子蚀刻法被选择性蚀刻，直到通孔绝缘体11具有与通孔导体5的凹陷部分17的底部19的高度相同的高度。通孔导体 5和25彼此对准，并且接合表面12和22以固态接合方式彼此接合。

22. 发明授权

US07183190B2 Semiconductor device and fabrication method therefor 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07183190B2
公开(公告)日：2007-02-27
申请号：US10258062
申请日：2001-03-27
申请人： Kinji Saijo , Shingji Ohsawa , Hiroaki Okamoto , Kazuo Yoshida , Tadatomo Suga
发明人： Kinji Saijo , Shingji Ohsawa , Hiroaki Okamoto , Kazuo Yoshida , Tadatomo Suga
IPC分类号： H01L21/44
CPC分类号： H01L24/12 , H01L23/3114 , H01L24/11 , H01L24/94 , H01L2224/0231 , H01L2224/0401 , H01L2224/05147 , H01L2224/05155 , H01L2224/05647 , H01L2224/13099 , H01L2224/16 , H01L2224/274 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2924/00014
摘要： A method of efficiently and inexpensively fabricating a chip-size package having an electrode pitch expanded by forming a conductor wiring on the electrode forming surface side of a semiconductor chip, especially, a method for facilitating wiring and bump forming. A semiconductor device comprising a semi-conductor elements and conductor wirings formed on the semiconductor elements by etching wiring-forming metal foil; and a fabrication method for a semiconductor device comprising the steps of laminating wiring forming metal foil on the electrode forming surface side on the semiconductor, forming a resist wiring pattern on the metal foil, etching the metal foil, and slicing the device into individual elements.
摘要翻译：尤其是在半导体芯片的电极形成面侧形成导体布线而具有电极间距扩大的芯片尺寸封装的方法，特别是有助于布线和凸块形成的方法。一种半导体器件，包括通过蚀刻形成布线的金属箔在半导体元件上形成的半导体元件和导体布线; 以及一种半导体器件的制造方法，包括以下步骤：在半导体上的电极形成表面侧上层叠布线形成金属箔，在金属箔上形成抗蚀剂布线图案，蚀刻金属箔，将器件分割成单独的元件。

23. 发明申请

US20060085965A1 Bonding device and method 有权
标题翻译：粘合装置和方法
公开(公告)号：US20060085965A1
公开(公告)日：2006-04-27
申请号：US10528690
申请日：2003-09-22
申请人： Tadatomo Suga , Toshihiro Ito , Akira Yamauchi
发明人： Tadatomo Suga , Toshihiro Ito , Akira Yamauchi
IPC分类号： B23P11/00
CPC分类号： H01L24/81 , H01L2224/13144 , H01L2224/75 , H01L2224/7501 , H01L2224/751 , H01L2224/81801 , H01L2924/00011 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01024 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , Y10T29/49144 , Y10T29/49908 , Y10T29/49924 , Y10T29/5313 , Y10T29/53174 , H01L2224/0401
摘要： A device and method for bonding objects to be bonded each having a metal bonding portion on a substrate, comprising cleaning means for exposing the metal bonding portions to a plasma having an energy enough to etch the surfaces of the metal bonding portions at a depth of 1.6 nm or more over the entire surfaces of the metal bonding portions under a reduced pressure and bonding means for bonding the metal bonding portions of the objects taken out of the cleaning means in an atmospheric air. By using a specific scheme, metal bonding portions after the plasma cleaning can be bonded in the atmospheric air, thereby significantly simplifying the bonding process and the whole device and lowering the cost.
摘要翻译：一种用于将每个具有金属接合部分的要被接合的物体接合在基板上的装置和方法，包括用于将金属接合部分暴露于等离子体的清洁装置，该等离子体具有足以在深度1.6刻蚀金属接合部分的表面的能量在减压下的金属接合部的整个表面上的nm以上的粘合装置和用于将从清洁装置中取出的物体的金属接合部分接合在大气中的接合装置。通过使用具体的方案，等离子体清洗后的金属接合部分可以粘结在大气中，从而大大简化了接合工艺和整个器件，降低了成本。

24. 发明申请

US20060043552A1 Semiconductor device and process for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060043552A1
公开(公告)日：2006-03-02
申请号：US11213882
申请日：2005-08-30
申请人： Tadatomo Suga , Toshihiro Itoh
发明人： Tadatomo Suga , Toshihiro Itoh
IPC分类号： H01L23/02
CPC分类号： H01L24/81 , H01L21/4846 , H01L23/49811 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/1319 , H01L2224/16 , H01L2224/7901 , H01L2224/81011 , H01L2224/81012 , H01L2224/81075 , H01L2224/81192 , H01L2224/81801 , H01L2224/81894 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/19043 , H01L2924/351 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The present invention relates to a semiconductor device in which electrodes formed on a semiconductor chip and electrodes formed on a wiring board are electrically connected via projecting elastic electrodes, and further relates to a mounting method of reducing a pressure applied to electrodes formed on a substrate or underlying wirings when a semiconductor chip and a wiring board are bonded.
摘要翻译：半导体装置技术领域本发明涉及一种半导体装置，其中形成在半导体芯片上的电极和形成在布线板上的电极通过突出的弹性电极电连接，还涉及一种降低施加到形成在基板上的电极的压力的安装方法，当半导体芯片和布线板接合时的底部布线。

25. 发明公开

US20240079374A1 BONDING SYSTEM AND BONDING METHOD 审中-公开
公开(公告)号：US20240079374A1
公开(公告)日：2024-03-07
申请号：US18487071
申请日：2023-10-14
申请人： Tadatomo SUGA , BONDTECH CO., LTD.
发明人： Akira YAMAUCHI , Tadatomo SUGA
IPC分类号： H01L23/00
CPC分类号： H01L24/74 , H01L24/80 , H01L2224/8022
摘要： Bonding system that bonds each of a plurality of second articles to a first article, wherein each of the plurality of second articles is a chip comprising an uneven portion on a circumference closer to a bonding surface to be bonded to the first article, the bonding system comprises: a device for supplying a second article that supplies the plurality of second articles; a bond device that bonds the plurality of second articles to the first article by bringing the plurality of second articles into contact with the first article; and a device for transporting a second article that transports, to the bond device, at least one of the plurality of second articles supplied from the device for supplying a second article, and the device for transporting a second article comprises a holder for holding a second article that holds the uneven portion of the at least one second article.

26. 发明公开

US20240009984A1 SUBSTRATE BONDING METHOD AND SUBSTRATE BONDING SYSTEM 审中-公开
公开(公告)号：US20240009984A1
公开(公告)日：2024-01-11
申请号：US18245895
申请日：2021-09-10
申请人： Tadatomo SUGA , BONDTECH CO., LTD.
发明人： Akira YAMAUCHI , Tadatomo SUGA
IPC分类号： B32B37/12 , B32B38/10 , B32B37/10
CPC分类号： B32B37/12 , B32B38/10 , B32B37/10 , B32B2309/04 , B32B2309/12 , B32B2310/14 , B32B2310/0881
摘要： A substrate bonding method for bonding two substrates includes an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of reactive ion etching using nitrogen gas and irradiation of nitrogen radicals, activating the bonding surface, a gas exposure step of, after the activation treatment step, exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time, and a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step.

27. 发明授权

US10204785B2 Substrate bonding apparatus and substrate bonding method 有权
公开(公告)号：US10204785B2
公开(公告)日：2019-02-12
申请号：US15810932
申请日：2017-11-13
申请人： Tadatomo Suga , BONDTECH CO., LTD.
发明人： Tadatomo Suga , Akira Yamauchi
IPC分类号： H01L21/18 , B23K20/00 , H01L21/02 , H05H1/46 , H05H3/02 , H01J37/32 , H01L21/67 , H01L25/065 , H01L21/762
摘要： A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

28. 发明授权

US09962908B2 Method for bonding polymer film and polymer film, method for bonding polymer film and inorganic material substrate, polymer film laminate, and laminate of polymer film and inorganic material substrate 有权
公开(公告)号：US09962908B2
公开(公告)日：2018-05-08
申请号：US14391568
申请日：2013-04-09
申请人： Tadatomo Suga , LAN TECHNICAL SERVICE CO., LTD.
发明人： Tadatomo Suga , Yoshiie Matsumoto
IPC分类号： B32B15/08 , B29C65/14 , B29C65/00 , C08J5/12 , B29C59/14 , B32B15/09 , B32B27/28 , B32B27/36 , B32B37/24 , B32B38/00 , B32B27/08 , B32B17/06 , B32B37/18 , B32B37/20 , B32B37/02 , B32B37/00
CPC分类号： B32B15/08 , B29C59/14 , B29C65/1432 , B29C65/1467 , B29C66/028 , B29C66/1122 , B29C66/45 , B29C66/71 , B29C66/712 , B29C66/72321 , B29C66/72325 , B29C66/72326 , B29C66/73161 , B29C66/7373 , B29C66/7392 , B29C66/73921 , B29C66/7394 , B29C66/73941 , B29C66/74 , B29C66/7461 , B29C66/74611 , B29C66/7465 , B29C66/8221 , B29C66/83241 , B29C66/83413 , B32B15/09 , B32B17/064 , B32B27/08 , B32B27/281 , B32B27/36 , B32B37/0076 , B32B37/02 , B32B37/182 , B32B37/203 , B32B37/24 , B32B38/00 , B32B2037/0092 , B32B2037/243 , B32B2250/03 , B32B2255/10 , B32B2255/20 , B32B2255/205 , B32B2307/546 , B32B2309/68 , B32B2310/0881 , B32B2457/20 , B32B2457/206 , C08J5/12 , Y10T156/10 , Y10T428/31681 , B29K2067/003 , B29K2079/08 , B29K2067/00 , B29K2067/006
摘要： The present invention provides a method for firmly and inexpensively bonding at low temperature a polymer film to another polymer film or to a glass substrate without the use of an organic adhesive. A method for bonding a polymer film includes a step (S1) for forming a first inorganic material layer on part or all of a first polymer film; a step (S3) for forming a second inorganic material layer on part or all of a second polymer film; a step (S2) for surface-activating the surface of the first inorganic material layer by bombarding with particles having a predetermined kinetic energy; a step (S4) for surface-activating the surface of the second inorganic material layer by bombarding with particles having a predetermined kinetic energy; and a step (S5) for abutting the surface-activated surface of the first inorganic material layer against the surface-activated surface of the second inorganic material layer and bonding the first polymer film and second polymer film together.

29. 发明申请

US20150171365A1 ELECTRONIC ELEMENT SEALING METHOD AND BONDED SUBSTRATE 有权
标题翻译：电子元件密封方法和粘结基板
公开(公告)号：US20150171365A1
公开(公告)日：2015-06-18
申请号：US14407721
申请日：2013-06-14
申请人： Tadatomo SUGA , LAN TECHNICAL SERVICE CO., LTD.
发明人： Tadatomo Suga , Yoshiie Matsumoto
IPC分类号： H01L51/52 , H01L51/56
CPC分类号： H01L51/5246 , H01L51/525 , H01L51/56 , H05B33/04 , H05B33/10
摘要： [Problem] The aim of the invention is to provide a method of sealing an electronic element such as an organic EL element using a normal temperature bonding method that enables bonding at low temperature and in which permeation of external gases such as hydrogen or oxygen through the sealed section (dam) formed by the organic material, or the junction interface of the sealed section and a cover substrate is suppressed. [Solution] A method of sealing an electronic element comprises a step of forming a sealing section by forming a sealing section including an organic material on the surface of a first substrate formed with the electronic element, surrounding this electronic element with a thickness that is larger than that of this electronic element; a step of forming a first inorganic material layer in which a first inorganic material layer is formed at least on the exposed surface of this sealing section; and a substrate bonding step of bonding the first substrate and the second substrate by pushing together the sealing section of the first substrate and the junction location of the second substrate.
摘要翻译：发明内容本发明的目的是提供一种使用常温接合方法密封诸如有机EL元件的电子元件的方法，该常温接合方法能够在低温下进行接合，并且其中外部气体例如氢气或氧气通过由有机材料形成的密封部（坝），密封部的接合界面和覆盖基板被抑制。 [解决方案]密封电子元件的方法包括通过在形成有电子元件的第一基板的表面上形成包括有机材料的密封部分形成密封部分的步骤，围绕该电子元件的厚度大于比这个电子元素; 形成第一无机材料层的步骤，其中至少在该密封段的暴露表面上形成第一无机材料层; 以及基板接合步骤，通过将第一基板的密封部分和第二基板的连接位置推在一起来接合第一基板和第二基板。

30. 发明申请

US20140048805A1 BONDING-SUBSTRATE FABRICATION METHOD, BONDING SUBSTRATE, SUBSTRATE BONDING METHOD, BONDING-SUBSTRATE FABRICATION APPARATUS, AND SUBSTRATE ASSEMBLY 有权
公开(公告)号：US20140048805A1
公开(公告)日：2014-02-20
申请号：US13982697
申请日：2012-01-30
申请人： Tadatomo Suga , Akira Yamauchi , Ryuichi Kondou
发明人： Tadatomo Suga , Akira Yamauchi , Ryuichi Kondou
IPC分类号： H01L21/322 , H01L29/04 , H01L29/36 , H01L21/263
CPC分类号： H01L21/3221 , B23K1/20 , B23K20/24 , B23K2101/36 , H01J37/317 , H01J2237/202 , H01J2237/3165 , H01L21/02046 , H01L21/2007 , H01L21/263 , H01L21/302 , H01L21/67092 , H01L21/67115 , H01L21/76251 , H01L29/04 , H01L29/36
摘要： [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

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