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21. 发明授权

US07838886B2 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US07838886B2
公开(公告)日：2010-11-23
申请号：US12401959
申请日：2009-03-11
申请人： Dong-Gyu Kim , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
发明人： Dong-Gyu Kim , Sung-Haeng Cho , Hyung-Jun Kim , Sung-Ryul Kim , Yong-Mo Choi
IPC分类号： H01L29/04
CPC分类号： G02F1/136213 , H01L27/1255
摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and fight transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
摘要翻译：一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。因此，可以形成足够的存储电容，而不会降低开口率并且防止液晶显示器的透射率。此外，可以通过连接到栅极金属层的连接构件充分形成电容。

22. 发明申请

US20100051957A1 THIN FILM TRANSISTOR ARRAY PANEL 有权
标题翻译：薄膜晶体管阵列
公开(公告)号：US20100051957A1
公开(公告)日：2010-03-04
申请号：US12401959
申请日：2009-03-11
申请人： Dong-Gyu KIM , Sung-Haeng CHO , Hyung-Jun KIM , Sung-Ryul KIM , Yong-Mo CHOI
发明人： Dong-Gyu KIM , Sung-Haeng CHO , Hyung-Jun KIM , Sung-Ryul KIM , Yong-Mo CHOI
IPC分类号： H01L33/00
CPC分类号： G02F1/136213 , H01L27/1255
摘要： A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are formed. Accordingly, sufficient storage capacitance may be formed without a decrease of the aperture ratio and fight transmittance of a liquid crystal display. Also, the capacitance may be sufficiently formed through the connecting member connected to a gate metal layer.
摘要翻译：一种薄膜晶体管阵列面板，其中形成中间存储电极和与薄膜晶体管的漏极重叠从而形成存储电容的存储电极。因此，可以形成足够的存储电容，而不会降低开口率并且防止液晶显示器的透射率。此外，可以通过连接到栅极金属层的连接构件充分形成电容。

23. 发明申请

US20080218833A1 Laser repair system 审中-公开
标题翻译：激光修复系统
公开(公告)号：US20080218833A1
公开(公告)日：2008-09-11
申请号：US12072091
申请日：2008-02-22
申请人： Dong Il Son , Duk Sung Kim , Sung Haeng Cho , Won Hee Song , Chang Hyuk Jeong
发明人： Dong Il Son , Duk Sung Kim , Sung Haeng Cho , Won Hee Song , Chang Hyuk Jeong
IPC分类号： G02B26/02
CPC分类号： B23K26/066
摘要： A laser repair system including a laser light oscillator for generating laser light, and a slit unit on which the laser light is irradiated and which includes a laser light-blocking section, a first slit section and a second slit section, wherein the laser light-blocking section of the slit unit does not transmit the laser light incident on the laser light-blocking section, and the amount of light transmitted through the first slit section is greater than that of light transmitted through the second slit section.
摘要翻译：一种激光修复系统，包括用于产生激光的激光振荡器和照射激光的狭缝单元，其包括激光阻挡部分，第一狭缝部分和第二狭缝部分，其中，狭缝单元的阻挡部分不透射入射在激光阻挡部分上的激光，并且透射通过第一狭缝部分的光量大于透射通过第二狭缝部分的光的量。

24. 发明授权

US08755019B2 Method for manufacturing a liquid crystal display 有权
标题翻译：液晶显示器的制造方法
公开(公告)号：US08755019B2
公开(公告)日：2014-06-17
申请号：US13193488
申请日：2011-07-28
申请人： Ji-Young Park , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
发明人： Ji-Young Park , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
IPC分类号： G02F1/1339 , G02F1/13
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , H01L29/41733
摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.
摘要翻译：制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在源电极和漏电极。

25. 发明授权

US08735890B2 Display substrate and method of manufacturing the display substrate 有权
标题翻译：显示基板和制造显示基板的方法
公开(公告)号：US08735890B2
公开(公告)日：2014-05-27
申请号：US13328658
申请日：2011-12-16
申请人： Ki-Won Kim , Je-Hun Lee , Sung-Haeng Cho , Woo-Geun Lee , Kap-Soo Yoon , Do-Hyun Kim , Seung-Ha Choi
发明人： Ki-Won Kim , Je-Hun Lee , Sung-Haeng Cho , Woo-Geun Lee , Kap-Soo Yoon , Do-Hyun Kim , Seung-Ha Choi
IPC分类号： H01L29/786
CPC分类号： H01L27/1225 , H01L27/1288
摘要： In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.
摘要翻译：在显示基板和显示基板的制造方法中，显示基板包括数据线，通道图案，绝缘图案和像素电极。数据线沿着基底基板上的方向延伸。通道图案设置在与数据线连接的输入电极和与输入电极间隔开的输出电极之间的分离区域中。通道图案与输入电极和输出电极上的输出电极接触。绝缘图案与基底基板上的沟道图案间隔开，并且包括暴露输出电极的接触孔。像素电极形成在绝缘图案上，以通过接触孔与输出电极接触。因此，可以使氧化物半导体层的损伤最小化，并且可以简化制造工艺。

26. 发明申请

US20130032793A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20130032793A1
公开(公告)日：2013-02-07
申请号：US13367061
申请日：2012-02-06
申请人： Do-Hyun KIM , Yoon Ho KHANG , Dong-Hoon LEE , Sang Ho PARK , Se Hwan YU , Cheol Kyu KIM , Yong-Su LEE , Sung-Haeng CHO , Chong Sup CHANG , Dong Jo KIM , Jung Kyu LEE
发明人： Do-Hyun KIM , Yoon Ho KHANG , Dong-Hoon LEE , Sang Ho PARK , Se Hwan YU , Cheol Kyu KIM , Yong-Su LEE , Sung-Haeng CHO , Chong Sup CHANG , Dong Jo KIM , Jung Kyu LEE
IPC分类号： H01L29/786 , H01L21/20
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/1237 , H01L27/1262 , H01L27/127 , H01L27/1288 , H01L29/45 , H01L29/7869
摘要： Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
摘要翻译：提供了一种薄膜晶体管阵列面板。根据本发明的示例性实施例的薄膜晶体管阵列面板包括：设置在基板上的栅极布线层; 设置在所述栅极布线层上的氧化物半导体层; 以及数据布线层，其设置在所述氧化物半导体层上，所述数据布线层包括包含铜的主布线层和设置在所述主布线层上并包括铜合金的覆盖层。

27. 发明申请

US20120319112A1 THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL AND METHODS FOR MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管，薄膜晶体管板及其制造方法
公开(公告)号：US20120319112A1
公开(公告)日：2012-12-20
申请号：US13223746
申请日：2011-09-01
申请人： Sung-Haeng CHO , Jae-Woo PARK , Do-Hyun KIM
发明人： Sung-Haeng CHO , Jae-Woo PARK , Do-Hyun KIM
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/45 , H01L29/78618
摘要： A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer on the gate insulating layer, and a drain electrode and a source electrode on the oxide semiconductor layer and spaced apart from each other. The drain electrode includes a first drain sub-electrode on the oxide semiconductor layer, and a second drain sub-electrode on the first drain sub-electrode. The source electrode includes a first source sub-electrode on the oxide semiconductor layer, and a second source sub-electrode on the first source sub-electrode. The first drain sub-electrode and the first source sub-electrode include gallium zinc oxide (GaZnO), and the second source sub-electrode and the second drain sub-electrode include a metal atom.
摘要翻译：薄膜晶体管包括栅极电极，栅极绝缘层，栅极绝缘层上的氧化物半导体层，以及氧化物半导体层上的间隔开的漏电极和源电极。漏极包括氧化物半导体层上的第一漏极子电极和第一漏极子电极上的第二漏极子电极。源电极包括氧化物半导体层上的第一源子电极和第一源子电极上的第二源子电极。第一漏极子电极和第一源极电极包括镓锌氧化物（GaZnO），第二源极子电极和第二漏极子电极包括金属原子。

28. 发明申请

US20110133198A1 THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20110133198A1
公开(公告)日：2011-06-09
申请号：US13026403
申请日：2011-02-14
申请人： Sung-Haeng CHO , Ki-Hun JEONG , Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Seung-Hwan SHIM
发明人： Sung-Haeng CHO , Ki-Hun JEONG , Jun-Ho SONG , Joo-Han KIM , Hyung-Jun KIM , Seung-Hwan SHIM
IPC分类号： H01L29/786 , H01L33/16
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/1229 , H01L27/1288 , H01L29/04 , H01L29/78696
摘要： A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.
摘要翻译：薄膜晶体管，显示装置及其制造方法。薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。第一结晶度高于第二结晶度。

29. 发明授权

US07915689B2 Thin film transistor, display device including the same and manufacturing method thereof 有权
标题翻译：薄膜晶体管，包括该薄膜晶体管的显示装置及其制造方法
公开(公告)号：US07915689B2
公开(公告)日：2011-03-29
申请号：US12260464
申请日：2008-10-29
申请人： Sung-Haeng Cho , Ki-Hun Jeong , Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Seung-Hwan Shim
发明人： Sung-Haeng Cho , Ki-Hun Jeong , Jun-Ho Song , Joo-Han Kim , Hyung-Jun Kim , Seung-Hwan Shim
IPC分类号： H01L29/786
CPC分类号： H01L29/66765 , G02F1/13454 , H01L27/1229 , H01L27/1288 , H01L29/04 , H01L29/78696
摘要： A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.
摘要翻译：薄膜晶体管，显示装置及其制造方法。薄膜晶体管包括控制电极，与控制电极重叠的半导体，以及设置在半导体上或其下方并且彼此相对的输入电极和输出电极。半导体包括设置在输入电极和输出电极之间并具有第一结晶度的第一部分和与第一部分连接的与输入电极或输出电极重叠并具有第二结晶度的第二部分。第一结晶度高于第二结晶度。

30. 发明申请

US20130099240A1 THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20130099240A1
公开(公告)日：2013-04-25
申请号：US13650528
申请日：2012-10-12
申请人： Hyun-Jung LEE , Sung-Haeng CHO , Woo-Geun LEE , Jang-Hoon HA , Hee-Jun BYEON , Ji-Yun HONG , Ji-Soo OH
发明人： Hyun-Jung LEE , Sung-Haeng CHO , Woo-Geun LEE , Jang-Hoon HA , Hee-Jun BYEON , Ji-Yun HONG , Ji-Soo OH
IPC分类号： H01L29/786 , H01L21/34
CPC分类号： H01L29/78693 , H01L27/1225 , H01L29/41733 , H01L29/78606 , H01L29/7869
摘要： A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

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