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21. 发明申请

US20090149564A1 TRANSPARENT FLEXIBLE FILM AND FABRICATION METHOD THEREOF 有权
标题翻译：透明柔性膜及其制造方法
公开(公告)号：US20090149564A1
公开(公告)日：2009-06-11
申请号：US12125328
申请日：2008-05-22
申请人： Chih-Kuang CHEN , Shih-Ming CHEN , Jia-Chi HUANG , Young-Jen LEE , Li-Ching WANG
发明人： Chih-Kuang CHEN , Shih-Ming CHEN , Jia-Chi HUANG , Young-Jen LEE , Li-Ching WANG
IPC分类号： C08J3/28 , C08K3/34 , C23C14/28
CPC分类号： C08K3/346 , C08J3/28 , C08J5/18 , Y10T428/10 , Y10T428/31504
摘要： A transparent flexible film is provided, formed by curing a composition, comprising: about 40-75 parts by weight of a clay; about 15-45 parts by weight of a water-soluble polymer; about 1-10 parts by weight of a mono-functional acrylic oligomer of formula (I), wherein n1 is an integer 2-25, R1 is C1-10 alkyl or H, and R2 is H or CH3; and about 10-45 parts by weight of a bi-functional acrylic oligomer of formula (II), wherein n2 is an integer 3-50, R3 and R4 are H or CH3.
摘要翻译：提供通过固化组合物形成的透明柔性膜，其包含：约40-75重量份的粘土; 约15-45重量份的水溶性聚合物; 约1-10重量份式（I）的单官能丙烯酸低聚物，其中n1为2-25的整数，R1为C1-10烷基或H，R2为H或CH3; 和约10-45重量份的式（II）的双功能丙烯酸低聚物，其中n2是3-50的整数，R3和R4是H或CH3。

22. 发明申请

US20090053891A1 Method for fabricating a semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20090053891A1
公开(公告)日：2009-02-26
申请号：US12196384
申请日：2008-08-22
申请人： Yi-Chin Lin , Chia-Wei Hsu , Yeou-Bin Lin , Yi-Tsung Jan , Sung-Min Wei , Chin-Cherng Liao , Pi-Xuang Chuang , Shih-Ming Chen , Hsiao-Ying Yang
发明人： Yi-Chin Lin , Chia-Wei Hsu , Yeou-Bin Lin , Yi-Tsung Jan , Sung-Min Wei , Chin-Cherng Liao , Pi-Xuang Chuang , Shih-Ming Chen , Hsiao-Ying Yang
IPC分类号： H01L21/768
CPC分类号： H01L21/76804 , H01L21/76831 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for fabricating a semiconductor device for preventing a poisoned via is provided. A substrate with a conductive layer formed thereon is provided. A composite layer is formed over the substrate and the conductive layer, wherein the composite layer comprises a dielectric layer and a spin-on-glass layer. A via hole is formed through the composite layer, wherein the via hole exposes a surface of the conductive layer. A protection layer is formed on a sidewall of the via hole so as to prevent out-gassing from the spin-on-glass layer. A barrier layer is formed on the protection layer and the conductive layer within the via hole. And a metal layer is deposited on the barrier layer within the via hole to fill the via hole.
摘要翻译：提供一种用于制造用于防止中毒的通孔的半导体器件的方法。提供其上形成有导电层的基板。在衬底和导电层上形成复合层，其中复合层包括电介质层和旋涂玻璃层。通过复合层形成通孔，其中通孔露出导电层的表面。在通孔的侧壁上形成保护层，以防止旋涂玻璃层的排气。阻挡层形成在保护层和通孔内的导电层上。并且在通孔内的阻挡层上沉积金属层以填充通孔。

23. 发明申请

US20080266400A1 Testing system and testing method 审中-公开
标题翻译：测试系统和测试方法
公开(公告)号：US20080266400A1
公开(公告)日：2008-10-30
申请号：US11822837
申请日：2007-07-10
申请人： Shen-Feng Lu , Shih-Ming Chen , Hsing-Fu Huang
发明人： Shen-Feng Lu , Shih-Ming Chen , Hsing-Fu Huang
IPC分类号： H04N17/02 , H04N5/225 , H04N5/335 , H04N9/68 , H04N17/00
CPC分类号： H04N17/002 , H04N17/02
摘要： A testing system including an image sensor, a transformer, and a display device is disclosed. The image sensor generates an image signal according to a light source. The transformer transforms the image signal into a processing signal. The display device displays a frame according to the processing signal.
摘要翻译：公开了一种包括图像传感器，变压器和显示装置的测试系统。图像传感器根据光源产生图像信号。变压器将图像信号变换为处理信号。显示装置根据处理信号显示帧。

24. 发明申请

US20080196624A1 Antireflective transparent zeolite hardcoat, method for fabricating the same 有权
标题翻译：防反射透明沸石硬涂层，其制造方法
公开(公告)号：US20080196624A1
公开(公告)日：2008-08-21
申请号：US12081466
申请日：2008-04-16
申请人： Anthony Shiaw-Tseh Chiang , Shih-Ming Chen , Young-Jen Lee
发明人： Anthony Shiaw-Tseh Chiang , Shih-Ming Chen , Young-Jen Lee
IPC分类号： C09D183/04
CPC分类号： G02B1/118 , C08J7/06 , G02B1/14 , Y10T428/249961 , Y10T428/249967 , Y10T428/249969 , Y10T428/24997 , Y10T428/249987
摘要： An antireflective transparent zeolite hardcoat and fabrication method thereof. The transparent zeolite hardcoat comprises a zeolite nanostructure made of zeolite nanocrystals vertically stacked into a porous structure on a substrate, wherein the porosity increases with structure height, thereby providing a smooth refractive index transition.
摘要翻译：一种抗反射透明沸石硬涂层及其制造方法。透明沸石硬涂层包括由沸石纳米晶体制成的沸石纳米结构，其垂直地堆叠在基底上的多孔结构中，其中孔隙率随着结构高度而增加，从而提供平滑的折射率转变。

25. 发明授权

US06995062B2 Method to improve flash forward tunneling voltage (FTV) performance 失效
标题翻译：改善闪电前进隧道电压（FTV）性能的方法
公开(公告)号：US06995062B2
公开(公告)日：2006-02-07
申请号：US10975672
申请日：2004-10-28
申请人： Shih-Ming Chen , Kuo-Chiang Ting , Jen-Shiang Leu
发明人： Shih-Ming Chen , Kuo-Chiang Ting , Jen-Shiang Leu
IPC分类号： H01L21/336
CPC分类号： H01L29/518 , H01L21/28273 , H01L29/42324 , H01L29/511
摘要： A floating gate structure and a method for forming a floating gate oxide layer comprising the following steps. A structure having a first dielectric layer formed thereover is provided. An oxide layer is formed over the first dielectric layer. A nitride layer is formed over the oxide layer. The nitride layer is patterned to form an opening exposing a portion of the oxide layer. A portion of the first dielectric layer is exposed by removing: the exposed portion of the oxide layer; and portions of the oxide layer underneath the patterned nitride layer adjacent to the opening to form respective undercuts. The exposed portion of the first dielectric layer is oxidized to form the floating gate oxide layer.
摘要翻译：浮栅结构和形成浮栅氧化层的方法，包括以下步骤。提供了一种其上形成有第一介电层的结构。在第一电介质层上形成氧化物层。在氧化物层上形成氮化物层。图案化氮化物层以形成暴露氧化物层的一部分的开口。第一电介质层的一部分通过去除：氧化物层的暴露部分而被暴露; 以及邻近开口的图案化氮化物层下面的氧化物层的部分，以形成相应的底切。第一电介质层的暴露部分被氧化以形成浮栅氧化层。

26. 发明授权

US06977213B1 IC chip solder bump structure and method of manufacturing same 失效
标题翻译： IC芯片焊料凸块结构及其制造方法
公开(公告)号：US06977213B1
公开(公告)日：2005-12-20
申请号：US10928612
申请日：2004-08-27
申请人： Yu-Ying Tsai , Shih-Ming Chen , Kuo-Wei Lin
发明人： Yu-Ying Tsai , Shih-Ming Chen , Kuo-Wei Lin
IPC分类号： H01L21/44 , H01L21/60 , H01L23/485
CPC分类号： H01L24/12 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0401 , H01L2224/05552 , H01L2224/05558 , H01L2224/05572 , H01L2224/05599 , H01L2224/05624 , H01L2224/05647 , H01L2224/13012 , H01L2224/13099 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/30107 , H01L2924/351 , H01L2924/00012 , H01L2924/00
摘要： Disclosed herein are a method of manufacturing a solder bump on a semiconductor device, a solder bump structure formed on a substrate, and an intermediate solder bump structure. In one embodiment, the method includes creating a bonding pad over a semiconductor substrate, and placing a mask layer over the substrate and the bonding pad. The method also includes forming an opening in the mask layer having a primary solder mold and at least one secondary solder mold joined with the primary mold, where the opening exposes a portion of the bonding pad. In this embodiment, the method further includes filling the primary solder mold and the at least one secondary solder mold with solder material to form corresponding primary and at least one secondary solder columns in electrical contact with the bonding pad. The method also includes removing the mask layer after the filling of the solder molds with the solder material. The method still further includes reflowing the solder material to form a primary solder bump from the solder material of the primary solder column and at least a portion of the solder material from the at least one secondary solder column through cohesion of the solder material from the at least one secondary solder column to the primary solder column when melted.
摘要翻译：本文公开了一种在半导体器件上制造焊料凸块的方法，形成在基板上的焊料凸块结构和中间焊料凸块结构。在一个实施例中，该方法包括在半导体衬底上形成接合焊盘，并将掩模层放置在衬底和焊盘上。该方法还包括在掩模层中形成具有初级焊料模具的开口和与初级模具连接的至少一个次级焊接模具，其中开口暴露焊接区的一部分。在该实施例中，该方法还包括用焊料材料填充主焊料模具和至少一个二次焊接模具，以形成与焊盘电接触的相应的初级和至少一个次级焊料柱。该方法还包括在用焊料材料填充焊料模具之后去除掩模层。该方法还包括回流焊料材料以从主焊料柱的焊料材料形成主要焊料凸点，并且通过焊料材料与焊料的内聚力从至少一个辅助焊料柱形成至少一部分焊料材料当熔化时，至少一个辅助焊料柱到主焊料柱。

27. 发明申请

US20120318035A1 PRESSING-SHAPING METHOD FOR MANUFACTURING CIRCULAR COOLING BASE FOR BEING EMBEDDED WITH FINS AND MOLD USED IN THE METHOD 审中-公开
标题翻译：用于制造圆形冷却基座的压制方法，用于在该方法中使用的FINS和模具嵌入
公开(公告)号：US20120318035A1
公开(公告)日：2012-12-20
申请号：US13163819
申请日：2011-06-20
申请人： Shih-Ming CHEN
发明人： Shih-Ming CHEN
IPC分类号： B21D31/00
CPC分类号： F28F1/10 , B21K1/30 , B21K3/00 , B21K25/00 , F21V29/74
摘要： A pressing-shaping method for manufacturing a circular cooling base for being embedded with fins and a mold used in the method are disclosed. The method includes providing a blank ingot that has a first surface, a second surface, and a lateral circular surface encircling the rims of the first and second surfaces. The method further includes using a mold to press the blank ingot to cause the first surface of the blank ingot to indent inward to form a groove, and to cause a plurality of clipping grooves to be formed on the lateral circular surface of the blank ingot through extrusion. As a result, the blank ingot is shaped into the circular cooling base for being embedded with fins.
摘要翻译：公开了一种用于制造嵌入翅片的圆形冷却基座和用于该方法的模具的压制成型方法。该方法包括提供具有第一表面，第二表面和环绕第一表面和第二表面的边缘的横向圆形表面的坯料锭。该方法还包括使用模具按压坯料坯料使坯料锭的第一表面向内凹入以形成凹槽，并且使得在坯料锭的横向圆形表面上形成多个夹紧槽挤压。结果，坯料成形为圆形冷却基座，以嵌入翅片。

28. 发明授权

US08268227B2 Method for forming optical compensating films, optical compensating films formed thereby, structure of optical compensating films, and polarizing plates 有权
标题翻译：用于形成光学补偿膜的方法，由此形成的光学补偿膜，光学补偿膜的结构和偏振片
公开(公告)号：US08268227B2
公开(公告)日：2012-09-18
申请号：US12241324
申请日：2008-09-30
申请人： Chih-Kuang Chen , Shih-Ming Chen , Kun-Tsung Lu , Jia-Chih Huang , Li-Ching Wang
发明人： Chih-Kuang Chen , Shih-Ming Chen , Kun-Tsung Lu , Jia-Chih Huang , Li-Ching Wang
IPC分类号： B29C35/10
CPC分类号： G02B5/3083 , G02F1/133634 , G02F2001/133635 , G02F2413/01 , G02F2413/11
摘要： The invention provides a method for forming optical compensating films, including: (a) providing a suspension containing clay; (b) adding a mono-functional acrylic oligomer of formula (I) in the suspension, wherein n1 is 2-25, R1 is C1-10 alkyl or H and R2 is H or CH3; (c) adding a water-soluble polymer in the suspension; (d) adding a bi-functional acrylic oligomer of formula (II) in the suspension, wherein n2 is 3-50, and R3 and R4 independently are H or CH3; (e) after the step (d), drying the suspension to form a film; (f) exposing the film under UV light to cure the film; and (g) stretching the film, wherein the film has only a negative C-plate property before the stretching and has both negative C-plate and positive A-plate properties after the stretching.
摘要翻译：本发明提供一种形成光学补偿膜的方法，包括：（a）提供含有粘土的悬浮液; （b）在悬浮液中加入式（I）的单官能丙烯酸低聚物，其中n1为2-25，R1为C1-10烷基或H，R2为H或CH3; （c）在悬浮液中加入水溶性聚合物; （d）在悬浮液中加入式（II）的双功能丙烯酸低聚物，其中n2为3-50，R3和R4独立地为H或CH3; （e）在步骤（d）之后，干燥悬浮液以形成膜; （f）在UV光下使膜曝光以固化该膜; 和（g）拉伸该膜，其中该膜在拉伸前仅具有负的C-板性质，并且在拉伸后具有负的C-板和正的A板性质。

29. 发明申请

US20120061129A1 CIRCUIT BOARD STRUCTURE WITH LOW CAPACITANCE 审中-公开
标题翻译：具有低电容的电路板结构
公开(公告)号：US20120061129A1
公开(公告)日：2012-03-15
申请号：US12883169
申请日：2010-09-15
申请人： Ying-Jiunn Lai , Shih-Ming Chen , Tzu-Wei Yeh
发明人： Ying-Jiunn Lai , Shih-Ming Chen , Tzu-Wei Yeh
IPC分类号： H05K1/00 , H05K1/09
CPC分类号： H05K1/0253 , H05K1/0219 , H05K1/0225 , H05K1/024 , H05K1/0245 , H05K1/111 , H05K2201/09309 , H05K2201/09481 , H05K2201/10189 , Y02P70/611
摘要： A circuit board structure, comprising: a first metal layer, including at least one cavity; and a plurality of first pads, for connecting at least one differential signal transmission line; wherein at least part of a vertical projection of the first pad, which is projected on the first metal layer, is overlapped with the cavity.
摘要翻译：一种电路板结构，包括：第一金属层，包括至少一个空腔; 以及多个第一焊盘，用于连接至少一个差分信号传输线; 其中突出在第一金属层上的第一焊盘的垂直突起的至少一部分与空腔重叠。

30. 发明申请

US20110117709A1 SEMICONDUCTOR DEVICE FABRICATING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20110117709A1
公开(公告)日：2011-05-19
申请号：US12618585
申请日：2009-11-13
申请人： Chih-Ping LIN , Shih-Ming CHEN , Hsiao-Ying YANG , Wen-Hsien LIU , Po-Sheng HU
发明人： Chih-Ping LIN , Shih-Ming CHEN , Hsiao-Ying YANG , Wen-Hsien LIU , Po-Sheng HU
IPC分类号： H01L21/8238
CPC分类号： H01L21/823462
摘要： A semiconductor device fabricating method is described. The semiconductor device fabricating method includes providing a substrate. A first gate insulating layer and a second gate insulating layer are formed on the substrate, respectively. A gate layer is blanketly formed. A portion of the gate layer, the first gate insulating layer and the second gate insulating layer are removed to form a first gate, a remaining first gate insulating layer, a second gate and a remaining second gate insulating layer. The remaining first gate insulating layer not covered by the first gate has a first thickness, and the remaining second gate insulating layer not covered by the second gate has a second thickness, wherein a ratio between the first thickness and the second thickness is about 10 to 20. A pair of first spacers and a pair of second spacers are formed on sidewalls of the first gate and the second gate, respectively.
摘要翻译：描述半导体器件制造方法。半导体器件制造方法包括提供衬底。分别在基板上形成第一栅极绝缘层和第二栅极绝缘层。门层完全形成。去除栅极层，第一栅极绝缘层和第二栅极绝缘层的一部分以形成第一栅极，剩余的第一栅极绝缘层，第二栅极和剩余的第二栅极绝缘层。未被第一栅极覆盖的剩余的第一栅极绝缘层具有第一厚度，并且未被第二栅极覆盖的剩余的第二栅极绝缘层具有第二厚度，其中第一厚度和第二厚度之间的比率为约10度分别在第一栅极和第二栅极的侧壁上形成一对第一间隔物和一对第二间隔物。

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