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    • 24. 发明申请
    • CMOS IMAGE SENSOR DEVICE AND ITS FORMATION METHOD
    • CMOS图像传感器器件及其形成方法
    • US20090102000A1
    • 2009-04-23
    • US12175750
    • 2008-07-18
    • Seung-Ryong Park
    • Seung-Ryong Park
    • H01L31/0232H01L31/18
    • H01L27/14627
    • A method for forming a CMOS image sensor (CIS) in accordance with embodiments includes sequentially forming a first photoresist and a blocking layer over a semiconductor substrate where a logic section including a photodiode may be formed. A micro lens array pattern may be formed by coating a second photoresist over top of the formed blocking layer, patterning the second photoresist, and then etching the blocking layer by using the patterned second photoresist as a mask. The first photoresist may be patterned by performing isotropic etching using the micro lens array pattern as a mask. A micro lens array may be formed by filling a material having a refractivity higher than that of the first PR in the patterned portion of the first photoresist. The sensitivity of the CIS can be optimized by maximizing the fill factor while maintaining the spherical surface of the lens by fabricating a micro lens array using anisotropic etching.
    • 根据实施例的用于形成CMOS图像传感器(CIS)的方法包括在可以形成包括光电二极管的逻辑部分的半导体衬底上顺序地形成第一光致抗蚀剂和阻挡层。 可以通过在形成的阻挡层的顶部上涂覆第二光致抗蚀剂,图案化第二光致抗蚀剂,然后通过使用图案化的第二光致抗蚀剂作为掩模来蚀刻阻挡层来形成微透镜阵列图案。 通过使用微透镜阵列图案作为掩模进行各向同性蚀刻,可以对第一光致抗蚀剂进行图案化。 可以通过在第一光致抗蚀剂的图案化部分填充折射率高于第一PR的折射率的材料来形成微透镜阵列。 通过使用各向异性蚀刻制造微透镜阵列,可以通过最大化填充因子同时保持透镜的球形表面来优化CIS的灵敏度。
    • 29. 发明申请
    • IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
    • 图像传感器及其制造方法
    • US20100109112A1
    • 2010-05-06
    • US12608496
    • 2009-10-29
    • SEUNG RYONG PARK
    • SEUNG RYONG PARK
    • H01L31/0232
    • H01L27/14636H01L27/14605
    • An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a semiconductor substrate that includes photodiodes arranged for each unit pixel; an interlayer dielectric layer and metal wirings disposed on the semiconductor substrate; and a photorefractive unit that is formed on the periphery of an optical path incident on the photodiodes. The photorefractive unit has a lower refractive index than the interlayer dielectric layer. The slantly incident light can be incident on the photodiodes, while maintaining the slanted optical path as it is. The light sensitivity of the photodiodes can be improved, thereby improving image quality.
    • 公开了一种图像传感器及其制造方法。 图像传感器可以包括半导体衬底,其包括为每个单位像素布置的光电二极管; 设置在半导体衬底上的层间绝缘层和金属布线; 以及形成在入射到光电二极管上的光路周边的光折射单元。 光折射单元具有比层间电介质层低的折射率。 倾斜的入射光可以入射到光电二极管上,同时保持倾斜的光路。 可以提高光电二极管的光灵敏度,从而提高图像质量。