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21. 发明授权

US06791111B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06791111B2
公开(公告)日：2004-09-14
申请号：US10323772
申请日：2002-12-20
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L2904
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： The present invention relates to a display device. In particular, the display device of the present invention has a gate electrode over a substrate, the gate electrode has a lamination of a first conductive layer over the substrate and a second conductive layer on the first conductive layer; a semiconductor layer over the gate electrode with a gate insulating film interposed between; an insulating film in contact with a portion of the semiconductor layer; and at least one of source and drain electrodes formed in contact with a portion of the insulating film, where the first conductive layer does not have a tapered cross section, and the second conductive layer has a tapered cross section.
摘要翻译：本发明涉及一种显示装置。特别地，本发明的显示装置在基板上具有栅电极，栅电极具有在基板上的第一导电层和第一导电层上的第二导电层的叠层; 位于栅极电极上的半导体层，其间插入有栅极绝缘膜; 与所述半导体层的一部分接触的绝缘膜; 以及形成为与所述绝缘膜的一部分接触的源电极和漏电极中的至少一个，其中所述第一导电层不具有锥形横截面，并且所述第二导电层具有锥形横截面。

22. 发明授权

US06727124B2 Method of manufacturing a TFT using a catalytic element to promote crystallization of a semiconductor film and gettering the catalytic element 失效
标题翻译：使用催化元件制造TFT以促进半导体膜的结晶并吸收催化元素的方法
公开(公告)号：US06727124B2
公开(公告)日：2004-04-27
申请号：US10000238
申请日：2001-11-02
申请人： Setsuo Nakajima , Hideto Ohnuma , Naoki Makita , Takuya Matsuo
发明人： Setsuo Nakajima , Hideto Ohnuma , Naoki Makita , Takuya Matsuo
IPC分类号： H01L2184
CPC分类号： H01L27/1214 , G02F1/13454 , H01L27/124 , H01L27/127 , H01L27/1277 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78675 , H01L2029/7863
摘要： A catalytic element for promoting crystallization of an amorphous silicon film is efficiently gettered to provide a highly reliable TFT, and an electro-optical device using the TFT and a method of manufacturing the electro-optical device are provided. The electro-optical device has an n-channel TFT and a p-channel TFT. A semiconductor layer of the p-channel TFT has a channel forming region (13), a region (11) containing an n-type impurity element and a p-type impurity element, and a region (12) containing only a p-type impurity element. In the p-channel TFT, a wiring line for electrically connecting the TFTs is connected to the region (12) containing only a p-type impurity element. The region containing an n-type impurity element in the p-channel TFT is narrower than a region doped with an n-type impurity element in a semiconductor layer of the n-channel TFT.
摘要翻译：提供了一种用于促进非晶硅膜的结晶的催化元件，以提供高度可靠的TFT，并且提供了使用该TFT的电光器件和制造该电光器件的方法。电光装置具有n沟道TFT和p沟道TFT。 p沟道TFT的半导体层具有沟道形成区域（13），包含n型杂质元素和p型杂质元素的区域（11）和仅包含p型杂质元素的区域（12）杂质元素。在p沟道TFT中，用于电连接TFT的布线与仅包含p型杂质元素的区域（12）连接。在p沟道TFT中含有n型杂质元素的区域比n沟道TFT的半导体层中掺杂有n型杂质元素的区域窄。

23. 发明授权

US06242290B1 Method of forming a TFT by adding a metal to a silicon film promoting crystallization, forming a mask, forming another silicon layer with group XV elements, and gettering the metal through opening in the mask 失效
标题翻译：通过在促进结晶的硅膜中添加金属来形成TFT的方法，形成掩模，用第XV族元素形成另一硅层，以及通过在掩模中打开来吸收金属
公开(公告)号：US06242290B1
公开(公告)日：2001-06-05
申请号：US09114223
申请日：1998-07-13
申请人： Setsuo Nakajima , Hisashi Ohtani
发明人： Setsuo Nakajima , Hisashi Ohtani
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , G02F1/13454 , H01L29/66765
摘要： There is disclosed a method of fabricating TFTs using a silicon film crystallized with the aid of nickel. The nickel is removed from the crystallized silicon film. The method starts with maintaining nickel in contact with the surface of an amorphous silicon film. Then, a heat treatment is performed to form a crystalline silicon film. At this time, nickel promotes the crystallization greatly, and nickel diffuses into the film. A mask is formed. A silicon film heavily doped with phosphorus is formed. Thereafter, a heat treatment is performed to move the nickel from the crystalline silicon film into the phosphorus-rich silicon film. This reduces the concentration of nickel in the crystalline silicon film.
摘要翻译：公开了使用借助于镍结晶的硅膜制造TFT的方法。从结晶硅膜中除去镍。该方法开始于保持镍与非晶硅膜的表面接触。然后，进行热处理以形成结晶硅膜。此时，镍大大促进结晶，镍扩散到膜中。形成掩模。形成重掺杂磷的硅膜。此后，进行热处理，以使镍从结晶硅膜移动到富磷硅膜中。这降低了结晶硅膜中镍的浓度。

24. 发明授权

US06229531B1 Active matrix display device 失效
标题翻译：主动矩阵显示装置
公开(公告)号：US06229531B1
公开(公告)日：2001-05-08
申请号：US08919253
申请日：1997-08-27
申请人： Setsuo Nakajima , Katunobu Awane , Tatsuo Morita
发明人： Setsuo Nakajima , Katunobu Awane , Tatsuo Morita
IPC分类号： G09G500
CPC分类号： G09G3/3677 , G09G3/30 , G09G3/3648 , G09G2300/08 , G09G2310/0267 , G09G2320/0219
摘要： An active matrix display device comprising an integrated peripheral driver circuit improved in image quality, provided in such a constitution that the feed through voltage &Dgr;Vs is set lower than the voltage Vgr necessary for realizing a single gradation. In this manner, a stable gradation display is obtained without being influenced by the feed through voltage &Dgr;Vs even when the fluctuation in the characteristics of the thin-film transistors provided in active matrix circuit may fluctuate the &Dgr;Vs.
摘要翻译：一种有源矩阵显示装置，其特征在于，具有提高图像质量的集成外围驱动电路，其特征在于，将馈电电压DELTAV设定为低于实现单一灰度所需的电压Vgr。以这种方式，即使当有源矩阵电路中提供的薄膜晶体管的特性的波动可能会使DELTAV波动时，也不会受馈电电压DELTAV的影响而获得稳定的灰度显示。

25. 发明授权

US5757456A Display device and method of fabricating involving peeling circuits from one substrate and mounting on other 失效
标题翻译：显示装置和制造方法涉及从一个基板剥离电路并安装在另一个基板上
公开(公告)号：US5757456A
公开(公告)日：1998-05-26
申请号：US611336
申请日：1996-03-08
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： G02F1/13 , G02F1/1333 , G02F1/1343 , G02F1/1345 , G02F1/1362 , H01L21/00
CPC分类号： G02F1/13452 , G02F1/1303 , G02F1/1345 , H01L21/67132 , G02F1/133305 , G02F1/13454 , H01L2221/68363 , H01L2224/16 , H01L2924/01079
摘要： A method of fabricating a driver circuit for use with a passive matrix or active matrix electrooptical display device such as a liquid crystal display. The driver circuit occupies less space than heretofore. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. This makes the configuration of the circuit much simpler than the configuration of the circuit heretofore required by the TAB method or COG method, because conducting lines are not laid in a complex manner. The driver circuit can be formed on a large-area substrate such as a glass substrate. The display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate. Hence, a display device having excellent portability can be obtained.
摘要翻译：一种制造用于无源矩阵或有源矩阵电光显示装置如液晶显示器的驱动电路的方法。驱动电路占用的空间比以前少。使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。随后，驱动电路的基板被去除。这使得电路的配置比TAB方法或COG方法所要求的电路的配置简单得多，因为导线不是以复杂的方式铺设。驱动电路可以形成在诸如玻璃基板的大面积基板上。显示装置可以形成在具有高抗冲击性的轻质材料上，例如塑料基板。因此，可以获得具有优异便携性的显示装置。

26. 发明申请

US20120113345A1 Display Device and Method of Fabricating the Same 失效
标题翻译：显示装置及其制作方法
公开(公告)号：US20120113345A1
公开(公告)日：2012-05-10
申请号：US13224395
申请日：2011-09-02
申请人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Yasuhiko Takemura , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： G02F1/136 , G02F1/1333
CPC分类号： G02F1/13452 , G02F1/1303 , G02F1/133305 , G02F1/1345 , G02F1/13454 , H01L21/67132 , H01L2221/68363 , H01L2224/16 , H01L2924/01079
摘要： A driver circuit for use with a passive matrix or active matrix electro-optical display device such as a liquid crystal display is fabricated to occupy a reduced area. A circuit (stick crystal) having a length substantially equal to the length of one side of the matrix of the display device is used as the driver circuit. The circuit is bonded to one substrate of the display device, and then the terminals of the circuit are connected with the terminals of the display device. Subsequently, the substrate of the driver circuit is removed. The driver circuit can be formed on a large-area substrate such as a glass substrate, while the display device can be formed on a lightweight material having a high shock resistance such as a plastic substrate.
摘要翻译：制造用于诸如液晶显示器的无源矩阵或有源矩阵电光显示装置的驱动电路以占据减小的面积。使用具有与显示装置的矩阵的一侧的长度大致相等的长度的电路（棒状晶体）作为驱动电路。电路接合到显示装置的一个基板，然后电路的端子与显示装置的端子连接。随后，驱动电路的基板被去除。驱动电路可以形成在诸如玻璃基板的大面积基板上，而显示装置可以形成在具有高抗震性的轻质材料如塑料基板上。

27. 发明申请

US20120080682A1 METHOD FOR PRODUCING DISPLAY DEVICE 失效
标题翻译：制造显示装置的方法
公开(公告)号：US20120080682A1
公开(公告)日：2012-04-05
申请号：US13224374
申请日：2011-09-02
申请人： Shunpei Yamazaki , Setsuo Nakajima , Yasuyuki Arai
发明人： Shunpei Yamazaki , Setsuo Nakajima , Yasuyuki Arai
IPC分类号： H01L33/08 , H01L33/42 , H01L33/16
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/13452 , G02F2001/13613 , H01L21/6835 , H01L24/24 , H01L24/82 , H01L27/1214 , H01L27/1218 , H01L2221/68368 , H01L2224/24051 , H01L2224/24226 , H01L2224/24998 , H01L2224/82007 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/01049 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/07811 , H01L2924/12042 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： In a liquid crystal display device, a first substrate includes electrical wirings and a semiconductor integrated circuit which has TFTs and is connected electrically to the electrical wirings, and a second substrate includes a transparent conductive film on a surface thereof. A surface of the first substrate that the electrical wirings are formed is opposite to the transparent conductive film on the second substrate. Also, in a liquid crystal display device, a first substrate includes a matrix circuit and a peripheral driver circuit, and a second substrate is opposite to the first substrate. Spacers are provided between the first and second substrates. A seal material is formed outside the matrix circuits and the peripheral driver circuits in the first and second substrates. A protective film is formed on the peripheral driver circuit has substantially a thickness equivalent to an interval between the substrates which is formed by the spacers.
摘要翻译：在液晶显示装置中，第一基板包括电布线和半导体集成电路，该半导体集成电路具有TFT并且与电布线电连接，第二基板在其表面上包括透明导电膜。形成电气配线的第一基板的表面与第二基板上的透明导电膜相反。此外，在液晶显示装置中，第一基板包括矩阵电路和外围驱动电路，第二基板与第一基板相对。隔板设置在第一和第二基板之间。在第一和第二基板中的矩阵电路和外围驱动电路之外形成密封材料。在外围驱动电路上形成保护膜，其厚度基本上等于由间隔物形成的基板之间的间隔。

28. 发明授权

US08003989B2 Thin film semiconductor device having a terminal portion 有权
标题翻译：具有端子部分的薄膜半导体器件
公开(公告)号：US08003989B2
公开(公告)日：2011-08-23
申请号：US12257992
申请日：2008-10-24
申请人： Setsuo Nakajima , Yasuyuki Arai
发明人： Setsuo Nakajima , Yasuyuki Arai
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L29/511 , G02F1/1345 , G02F1/1368 , G02F2001/136231 , G02F2001/13629 , G02F2001/136295 , H01L27/1248 , H01L27/1288 , H01L29/4908 , H01L29/78669
摘要： In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.
摘要翻译：在半导体装置中，由反无交错型TFT构成的无机材料形成的第一层间绝缘层，形成在第一层间绝缘层上的由有机材料构成的第二层间绝缘层和与第一层间绝缘层形成的像素电极第二层间绝缘层设置在基板上，并且在基板的端部上设置与另一基板的布线电连接的输入端子部。输入端子部分包括由与栅电极相同的材料制成的第一层和由与像素电极相同的材料制成的第二层。利用这种结构，光刻方法中使用的光掩模的数量可以减少到5个。

29. 发明授权

US07886689B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07886689B2
公开(公告)日：2011-02-15
申请号：US11664133
申请日：2005-09-20
申请人： Toshimasa Takeuchi , Setsuo Nakajima , Naomichi Saito , Osamu Nishikawa
发明人： Toshimasa Takeuchi , Setsuo Nakajima , Naomichi Saito , Osamu Nishikawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32348 , H01J37/32724 , H01J2237/0206 , H05H1/2406 , H05H2001/2412
摘要： To prevent occurrence of arcing caused by difference of thermal expansion between the electrode and the solid dielectric in a plasma processing apparatus.The bottom part of a casing 20 of processing units 10L, 10R is open, this opening part is closed with a solid dielectric plate 50, and an electrode 30 is received in the casing 20 such that the electrode 30 is free in the longitudinal direction. The solid dielectric plate 50 has such strength as capable of supporting the dead weight of the electrode 30 solely by itself. The electrode 30 is placed on the upper surface of the solid dielectric plate 50 is a non-fixed state such that the dead weight of the electrode 30 is almost totally applied to the solid dielectric plate 50.
摘要翻译：为了防止等离子体处理装置中电极和固体电介质之间的热膨胀差异引起的电弧放电。处理单元10L，10R的壳体20的底部打开，该开口部分用固体电介质板50封闭，并且电极30被容纳在壳体20中，使得电极30在纵向上是自由的。固体电介质板50具有能够单独支撑电极30的自重的强度。将电极30放置在固体电介质板50的上表面上是非固定状态，使得电极30的自重几乎完全施加到固体电介质板50上。

30. 发明授权

US07709302B2 Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07709302B2
公开(公告)日：2010-05-04
申请号：US10752993
申请日：2004-01-08
申请人： Setsuo Nakajima
发明人： Setsuo Nakajima
IPC分类号： H01L21/84 , H01L21/336 , H01L21/20 , H01L21/42
CPC分类号： H01L21/02686 , C03C17/22 , C03C2218/32 , H01L21/02672 , H01L21/2026 , H01L27/12 , H01L27/1277 , H01L27/1281 , H01L27/1285 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765
摘要： A purpose of the invention is to provide a method for leveling a semiconductor layer without increasing the number and the complication of manufacturing processes as well as without deteriorating a crystal characteristic, and a method for leveling a surface of a semiconductor layer to stabilize an interface between the surface of the semiconductor layer and a gate insulating film, in order to achieve a TFT having a good characteristic.In an atmosphere of one kind or a plural kinds of gas selected from hydrogen or inert gas (nitrogen, argon, helium, neon, krypton and xenon), radiation with a laser beam in the first, second and third conditions is carried out in order, wherein the first condition laser beam is radiated for crystallizing a semiconductor film or improving a crystal characteristic; the second condition laser beam is radiated for eliminating an oxide film; and the third condition laser beam is radiated for leveling a surface of the crystallized semiconductor film.
摘要翻译：本发明的目的是提供一种在不增加制造工艺的数量和复杂性以及不劣化晶体特性的情况下调整半导体层的方法，以及用于使半导体层的表面平整以稳定第半导体层的表面和栅极绝缘膜，以实现具有良好特性的TFT。在选自氢或惰性气体（氮气，氩气，氦气，氖气，氪气和氙气）中的一种或多种气体的气氛中，按照第一，第二和第三条件的激光束依次进行其中辐射第一状态激光束以使半导体膜结晶或提高晶体特性; 第二条件激光束被辐射以消除氧化膜; 并且第三条件激光束被照射以使结晶的半导体膜的表面平整。

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