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    • 22. 发明授权
    • Fabricating method of an array substrate having polysilicon thin film transistor
    • 具有多晶硅薄膜晶体管的阵列基板的制造方法
    • US06873379B2
    • 2005-03-29
    • US10109642
    • 2002-04-01
    • Jae-Sik ChoiSang-Min Jang
    • Jae-Sik ChoiSang-Min Jang
    • H01L29/786G02F1/1362G02F1/1368H01L21/336H01L21/768G02F1/136
    • H01L29/66757G02F1/136227G02F1/1368G02F2202/104H01L21/76802
    • A fabricating method of an array substrate includes: forming a semiconductor layer of polysilicon on a substrate, the semiconductor layer having first and second regions; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer on the first region of the semiconductor layer; forming source and drain regions by doping impurities into the second region of the semiconductor layer; forming an interlayer insulating layer on the gate electrode and the source and drain regions, the interlayer insulating layer having first and second contact holes exposing the source and drain regions, respectively, the first and second contact holes being formed by consecutive dry and wet etching methods; forming source and drain electrodes on the interlayer insulating layer, the source and drain electrodes contacting the source and drain regions through the first and second contact holes, respectively; forming a passivation layer on the source and drain electrodes, the passivation layer having a third contact hole exposing the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode contacting the drain electrode through the third contact hole.
    • 阵列基板的制造方法包括:在基板上形成多晶硅的半导体层,所述半导体层具有第一和第二区域; 在所述半导体层上形成栅极绝缘层; 在所述半导体层的所述第一区域上的所述栅极绝缘层上形成栅电极; 通过将杂质掺杂到半导体层的第二区域中形成源区和漏区; 在所述栅电极和所述源极和漏极区上形成层间绝缘层,所述层间绝缘层具有分别暴露所述源极和漏极区域的第一和第二接触孔,所述第一和第二接触孔通过连续的干法和湿蚀刻方法形成 ; 在所述层间绝缘层上形成源极和漏极,所述源极和漏极分别通过所述第一和第二接触孔与所述源极和漏极区域接触; 在源极和漏极上形成钝化层,钝化层具有暴露漏电极的第三接触孔; 以及在所述钝化层上形成像素电极,所述像素电极通过所述第三接触孔与所述漏电极接触。
    • 25. 发明授权
    • LCD display with contact hole and insulation layer above pixel electrode
    • LCD显示屏上带有接触孔和绝缘层上方的像素电极
    • US07173675B2
    • 2007-02-06
    • US10844346
    • 2004-05-13
    • Joon Young YangSang Min Jang
    • Joon Young YangSang Min Jang
    • G02F1/136
    • G02F1/136277G02F1/13454G02F1/13624G02F1/1368
    • A liquid crystal display (LCD) device includes a substrate including a pixel region and a driving circuit region, first and second semiconductor layers within the pixel region and the driving circuit region, a gate insulating layer on the substrate, first and second gate electrodes on the gate insulating layer, and a storage capacitor electrode on the gate insulating layer within the pixel region, first conductive source and drain regions within the first semiconductor layer, second conductive source and drain regions within the second semiconductor layer, a first insulating interlayer on the substrate, a pixel electrode on the first insulating interlayer overlapping the storage capacitor electrode, a second insulating interlayer on the substrate including the pixel electrode, a plurality of contact holes exposing the pixel electrode and the first and second source and drain regions, and first and second source and drain electrodes connected with the first and second source and drain regions through the contact holes.
    • 液晶显示器(LCD)装置包括:包括像素区域和驱动电路区域的衬底;像素区域内的第一和第二半导体层;以及驱动电路区域;衬底上的栅极绝缘层;第一和第二栅极电极; 所述栅极绝缘层和所述像素区域内的栅极绝缘层上的辅助电容电极,所述第一半导体层内的第一导电源极和漏极区域,所述第二半导体层内的第二导电源极和漏极区域, 基板,与第一绝缘夹层重叠的像素电极与辅助电容电极重叠,在包括像素电极的基板上的第二绝缘中间层,暴露像素电极以及第一和第二源极和漏极区域的多个接触孔,以及第一和第 与第一和第二源极和漏极r连接的第二源极和漏极 通过接触孔穿过。