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21. 发明授权

US06473993B1 Thermal treatment method and apparatus 失效
标题翻译：热处理方法及装置
公开(公告)号：US06473993B1
公开(公告)日：2002-11-05
申请号：US09537768
申请日：2000-03-30
申请人： Yasushi Yagi , Takeshi Sakuma , Wataru Okase , Masayuki Kitamura , Hironori Yagi , Eisuke Morisaki
发明人： Yasushi Yagi , Takeshi Sakuma , Wataru Okase , Masayuki Kitamura , Hironori Yagi , Eisuke Morisaki
IPC分类号： F26B304
CPC分类号： H01L21/67109
摘要： A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part. When lowering the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area lower (higher) than that at which the gas is supplied to the peripheral part to the central part.
摘要翻译：将半导体晶片安装在设置在处理室中的基座上，将晶片在约1000℃的温度下加热退火，并且从与晶片相对设置的气体供给装置供给气体。当提高晶片的温度和/或当降低晶片的温度时，将表面内温度差限制在较小的值以抑制滑移的发生。气体供给装置分别对应于晶片的中心部分和周边部分，以将不同流量的气体分别供应到中心部分和周边部分。当提高晶片的温度时，例如以比晶片的温度更高（低于）的温度的气体以比将气体供应到周边部分的流量更大（下）到中部。当降低晶片的温度时，例如以比晶片的温度更高（更低）的温度的气体以比供应气体的周边部分低的（高）的单位面积的流量被供给到中部。

22. 发明授权

US5958140A One-by-one type heat-processing apparatus 失效
标题翻译：一对一式热处理装置
公开(公告)号：US5958140A
公开(公告)日：1999-09-28
申请号：US686604
申请日：1996-07-26
申请人： Junichi Arami , Kenji Ishikawa , Masayuki Kitamura
发明人： Junichi Arami , Kenji Ishikawa , Masayuki Kitamura
IPC分类号： H01L21/22 , C23C16/44 , C23C16/455 , C23C16/46 , C30B25/10 , C30B25/14 , H01L21/00 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/45502 , C23C16/45561 , C23C16/45572 , C23C16/45574 , C23C16/46 , C30B25/10 , C30B25/14 , H01L21/67017 , H01L21/67098
摘要： A one-by-one type heat-processing apparatus is disclosed. The one-by-one type heat-processing apparatus includes a processing vessel for processing a semiconductor wafer. A susceptor having a support surface for placing the semiconductor wafer is arranged in the processing vessel. A shower head section is arranged at an interval with respect to the support surface of the susceptor. Processing gas supply pipes for supplying a processing gas are independently connected to the shower head section. A plurality of gas injection holes are formed in the shower head section. First to third heating means for heating the susceptor are attached to the susceptor. The first heating means having a disk-like shape is arranged at almost the center on the lower surface side of the susceptor. The second heating means is concentrically arranged to surround the first heating means. The third heating means is arranged at the peripheral edge portion of the susceptor. The diameter of a gas injection region having the plurality of gas injection holes on the surface of the shower head section opposite to the susceptor is substantially equal to the diameter of the third heating means. The apparatus also includes a central control section capable of independently controlling the first to third heating means.
摘要翻译：公开了一种一体式热处理装置。一对一型热处理装置包括用于处理半导体晶片的处理容器。具有用于放置半导体晶片的支撑表面的感受体布置在处理容器中。淋浴头部分相对于基座的支撑表面间隔设置。用于供应处理气体的处理气体供应管独立地连接到淋浴头部分。在喷头部形成有多个喷气孔。用于加热基座的第一至第三加热装置附接到基座。具有盘状形状的第一加热装置几乎位于基座的下表面侧的中心。第二加热装置同心地布置成围绕第一加热装置。第三加热装置设置在基座的周缘部。在淋浴喷头部的与基座相反的表面上具有多个气体喷射孔的气体注入区域的直径基本上等于第三加热装置的直径。该装置还包括能够独立地控制第一至第三加热装置的中央控制部。

23. 发明授权

US4511191A Anticreep device for annular member 失效
标题翻译：环形构件用防抱死装置
公开(公告)号：US4511191A
公开(公告)日：1985-04-16
申请号：US580453
申请日：1984-02-14
申请人： Masayuki Kitamura
发明人： Masayuki Kitamura
IPC分类号： F16C35/077 , F16C27/06
CPC分类号： F16C35/067 , F16C19/06
摘要： A device for preventing creep of the outer ring of an antifriction bearing relative to the housing supporting the outer ring. The bearing outer ring has a circumferential groove formed in its outer periphery eccentrically thereof and having fitted therein a bandlike resilient ring which has a curved protruding portion larger than the depth of the groove. In the vicinity of the protruding portion, the resilient ring has its opposite end portions lapped over each other within the groove. When the outer ring acts to creep within the housing, the shallow groove portion of the groove approaches the protruding portion and lapped end portions of the ring, causing the end portions to act as a wedge between the housing and the outer ring to stop the creep.
摘要翻译：一种用于防止减摩轴承的外圈相对于支撑外圈的壳体的蠕变的装置。轴承外圈具有在其外周偏心地形成的圆周槽，并且其中装配有带状弹性环，该带状弹性环具有大于凹槽深度的弯曲突出部分。在突出部附近，弹性环的相对端部在槽内彼此重叠。当外圈作用于在壳体内蠕动时，槽的浅槽部分接近环的突出部分和搭接的端部，使得端部作为壳体和外环之间的楔形件来停止蠕变。

24. 发明申请

US20120191671A1 COMPUTER SYSTEM AND DATA DE-DUPLICATION METHOD 审中-公开
标题翻译：计算机系统和数据去重现方法
公开(公告)号：US20120191671A1
公开(公告)日：2012-07-26
申请号：US13058288
申请日：2011-01-26
申请人： Masayuki Kitamura , Takuya Okamoto
发明人： Masayuki Kitamura , Takuya Okamoto
IPC分类号： G06F17/30
CPC分类号： G06F16/1748
摘要： A computer system and data de-duplication method capable of performing efficient data de-duplication are suggested.With a computer system including a plurality of first file storage apparatuses and a second file storage for storing and retaining file data of a target file(s) to be stored, which is sent from each of the first file storage apparatuses, the first file storage apparatus obtains sameness judgment information about the target file to be stored; compares the obtained sameness judgment information with the sameness judgment information about each file, which was reported from the second file storage in advance and is stored and retained by the second file storage apparatus; and sends reference information, which refers to a file that is stored and retained in the second file storage apparatus and is the same as the target file to be stored, to the second file storage apparatus if it is determined that the same file as the target file to be stored, is stored and retained in the second file storage apparatus.
摘要翻译：建议能够执行有效的重复数据删除的计算机系统和重复数据删除方法。利用包括多个第一文件存储装置的计算机系统和用于存储和保留从每个第一文件存储装置发送的要存储的目标文件的文件数据的第二文件存储装置，设备获取关于要存储的目标文件的相同判定信息; 将获得的相同判断信息与从第二文件存储器预先报告并由第二文件存储装置存储和保留的关于每个文件的相同性判断信息进行比较; 并且如果确定与目标相同的文件，则向第二文件存储装置发送涉及存储并保留在第二文件存储装置中并且与要存储的目标文件相同的文件的参考信息要存储的文件被存储并保存在第二文件存储装置中。

25. 发明申请

US20120111103A1 DETECTING APPARATUS 有权
标题翻译：检测装置
公开(公告)号：US20120111103A1
公开(公告)日：2012-05-10
申请号：US13254492
申请日：2009-08-03
申请人： Seiichi Matsumoto , Hiroyuki Kawaki , Shinya Kamada , Yasunori Toyoshima , Masayuki Kitamura , Takahiro Makihara
发明人： Seiichi Matsumoto , Hiroyuki Kawaki , Shinya Kamada , Yasunori Toyoshima , Masayuki Kitamura , Takahiro Makihara
IPC分类号： G01B21/08
CPC分类号： H01M10/48 , G01B11/306 , G01B21/30 , H01M10/425
摘要： The objective of the present invention is to provide an unexpected detecting apparatus enabled to evaluate an evenness of a compound coated on an electrode of a battery. The detecting apparatus (1) detects an evenness of a compound (12) coated on an electrode (10) of a battery, and includes a first sensor (20) for measuring a mass per unit area of the compound (12) in any points thereof, a second sensor (30, 50) for measuring a thickness of the compound (12) in the any points, and a holder (40, 60) for holding the first and second sensors (20, 30, 50), in which the first and second sensors (20, 30, 50) measure the mass and thickness at the same time, and the evenness is evaluated on the basis of the measured mass and thickness.
摘要翻译：本发明的目的是提供一种能够评估涂覆在电池的电极上的化合物的均匀性的意外检测装置。检测装置（1）检测涂覆在电池的电极（10）上的化合物（12）的均匀性，并且包括用于以任何点测量化合物（12）的每单位面积质量的第一传感器（20），用于测量任何点上的化合物（12）的厚度的第二传感器（30,50）和用于保持第一和第二传感器（20,30,50）的保持器（40,60），其中第一和第二传感器（20,30,50）同时测量质量和厚度，并且基于测量的质量和厚度来评估均匀度。

26. 发明申请

US20120068343A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068343A1
公开(公告)日：2012-03-22
申请号：US13069206
申请日：2011-03-22
申请人： Makoto Honda , Masayuki Kitamura
发明人： Makoto Honda , Masayuki Kitamura
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76814 , H01L21/28518 , H01L21/28556 , H01L21/76816 , H01L21/76843 , H01L21/76844 , H01L21/76856 , H01L21/76859 , H01L23/485 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes a semiconductor substrate, an interlayer dielectric film, a contact hole, a contact plug and a nickel silicide film. The semiconductor substrate includes silicon. The interlayer dielectric film is formed on the semiconductor substrate. The contact hole is formed in the interlayer dielectric film. A contact plug is formed within the contact hole. A nickel silicide film is formed on a bottom part of the contact hole and electrically connected to the contact plug. A position of an interface between the nickel silicide and the contact plug is higher than a position of an interface between the semiconductor substrate and the interlayer dielectric film.
摘要翻译：根据一个实施例，半导体器件包括半导体衬底，层间绝缘膜，接触孔，接触插塞和硅化镍膜。半导体衬底包括硅。层间绝缘膜形成在半导体衬底上。接触孔形成在层间电介质膜中。接触孔形成在接触孔内。在接触孔的底部形成有镍硅化物膜，与接触插塞电连接。镍硅化物和接触插塞之间的界面的位置高于半导体衬底和层间绝缘膜之间的界面的位置。

27. 发明授权

US07923839B2 Semiconductor device and method for fabricating semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07923839B2
公开(公告)日：2011-04-12
申请号：US12408567
申请日：2009-03-20
申请人： Masayuki Kitamura , Junichi Wada , Hideto Matsuyama
发明人： Masayuki Kitamura , Junichi Wada , Hideto Matsuyama
IPC分类号： H01L23/48
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/28556 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76873 , H01L2221/1089
摘要： A semiconductor device includes a contact plug electrically connected to a semiconductor substrate; a first barrier metal film with a columnar crystal structure arranged in contact with the semiconductor substrate at least on a bottom surface side of the contact plug; an amorphous film made of a material of the first barrier metal film arranged in contact with the first barrier metal film at least on the bottom surface side of the contact plug; a second barrier metal film made of a material identical to that of the first barrier metal film and having a columnar crystal structure, at least a portion of which is arranged in contact with the amorphous film on the bottom surface side and a side surface side of the contact plug; and a dielectric film arranged on the side surface side of the contact plug.
摘要翻译：半导体器件包括电连接到半导体衬底的接触插塞; 具有柱状晶体结构的第一阻挡金属膜至少在所述接触插塞的底面侧与所述半导体衬底接触; 由所述第一阻挡金属膜的材料制成的非晶膜至少在所述接触插塞的底面上与所述第一阻挡金属膜接触; 第二阻挡金属膜，其由与第一阻挡金属膜的材料相同的材料制成，并且具有柱状晶体结构，其至少一部分与底部表面侧的非晶质膜接触，并且侧表面侧接触塞; 以及设置在接触插塞的侧面侧的电介质膜。

28. 发明授权

US07432468B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07432468B2
公开(公告)日：2008-10-07
申请号：US11694102
申请日：2007-03-30
申请人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
发明人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B23K10/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.
摘要翻译：微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体作为在各个电介质部31下产生的等离子体的介质部分扩散。

29. 发明申请

US20070235425A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070235425A1
公开(公告)日：2007-10-11
申请号：US11694102
申请日：2007-03-30
申请人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
发明人： Shinsuke Oka , Takahiro Horiguchi , Kazuaki Nishimura , Masayuki Kitamura , Tadahiro Ohmi , Masaki Hirayama
IPC分类号： B23K9/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32238
摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.
摘要翻译：微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体作为在各个电介质部31下产生的等离子体的介质部分扩散。

30. 发明授权

US06467952B2 Virtual blackbody radiation system and radiation temperature measuring system 失效
标题翻译：虚拟黑体辐射系统和辐射温度测量系统
公开(公告)号：US06467952B2
公开(公告)日：2002-10-22
申请号：US09527239
申请日：2000-03-16
申请人： Eisuke Morisaki , Masayuki Kitamura , Nobuaki Takahashi , Takashi Shigeoka
发明人： Eisuke Morisaki , Masayuki Kitamura , Nobuaki Takahashi , Takashi Shigeoka
IPC分类号： G01K1500
CPC分类号： G01J5/522
摘要： A virtual blackbody radiation system (10) includes a light-emitting unit (1) including an LED driven by a fixed current, a light-receiving unit (2) including a sapphire rod, and an optical unit (3) including lenses (31, 32) for converging light emitted by the light-emitting unit in a convergent light. A cylindrical member (41)included in the optical unit (3)can be moved along the optical axis by a servomotor (42) included in a focus adjusting unit (4) for positional adjustment. The focus of convergent light relative to the light-receiving unit (2) can be adjusted by moving the lens (32) disposed in the cylindrical member (41) along the optical axis relative to the light-receiving unit (2). The intensity of the convergent light on the light-receiving unit (2) can be adjusted to the intensity of predetermined blackbody radiation. Thus, the virtual blackbody radiation system (10) is able to obtain light of a desired intensity without changing the driving current for driving a light source; consequently, the life time of the light source can be extended and the stability of radiation can be improved.
摘要翻译：虚拟黑体辐射系统（10）包括包括由固定电流驱动的LED的发光单元（1），包括蓝宝石棒的光接收单元（2）和包括透镜（31）的光学单元（3），32），用于会聚由所述发光单元发射的光。包括在光学单元（3）中的圆柱形构件（41）可以通过包括在聚焦调节单元（4）中的伺服电动机（42）沿光轴移动，用于位置调节。可以通过相对于光接收单元（2）沿着光轴移动设置在圆柱形构件（41）中的透镜（32）来调节相对于光接收单元（2）的会聚光的聚焦。光接收单元（2）上的会聚光的强度可以被调整到预定黑体辐射的强度。因此，虚拟黑体辐射系统（10）能够在不改变用于驱动光源的驱动电流的情况下获得所需强度的光; 因此，可以延长光源的寿命并且可以提高辐射的稳定性。

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