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21. 发明授权

US08168541B2 CMP polishing slurry and polishing method 有权
标题翻译： CMP抛光浆料和抛光方法
公开(公告)号：US08168541B2
公开(公告)日：2012-05-01
申请号：US12902337
申请日：2010-10-12
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： C09K13/00 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefore easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任意一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供一种研磨浆料和抛光方法，其可以有效和快速地对由氧化硅等制成的膜进行抛光，因此在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制该工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

22. 发明授权

US08084362B2 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US08084362B2
公开(公告)日：2011-12-27
申请号：US11802813
申请日：2007-05-25
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive, wherein the surface of the abrasive is modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有水和研磨剂的研磨浆料，其中研磨剂的表面用烷基并且优选还包含金属氧化剂，水溶性聚合物和金属抑制剂。

23. 发明申请

US20100323584A1 POLISHING LIQUID FOR METAL FILM AND POLISHING METHOD 失效
标题翻译：抛光液用于金属膜和抛光方法
公开(公告)号：US20100323584A1
公开(公告)日：2010-12-23
申请号：US12668096
申请日：2008-07-08
申请人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
发明人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
IPC分类号： B24B1/00 , C09K13/00
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212
摘要： The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.
摘要翻译：本发明涉及一种用于金属膜的抛光液，其包含7.0重量％或更多的金属氧化剂，水溶性聚合物，氧化金属溶解剂，金属防腐剂和水，条件是抛光总量金属膜用液体为100重量％，其中，所述水溶性聚合物的重均分子量为15万以上，为选自多元羧酸，多元羧酸和多元羧酸中的至少1种酯。根据本发明，提供了一种用于金属膜的抛光液，即使在低至1psi或更低的抛光压力下也可以以高速率进行抛光，并且抛光后的抛光膜的平面度优异，此外，即使在研磨的初始阶段也可以获得高抛光速率，并且提供了使用抛光液的抛光方法。

24. 发明授权

US07837800B2 CMP polishing slurry and polishing method 有权
标题翻译： CMP抛光浆料和抛光方法
公开(公告)号：US07837800B2
公开(公告)日：2010-11-23
申请号：US12149216
申请日：2008-04-29
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： B08B3/08 , C11D7/02 , C11D7/26 , C11D7/32
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任意一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

25. 发明授权

US4985328A Dry toner, dry developer and process for forming electrophotographic images 失效
标题翻译：干燥调色剂，干燥显影剂和用于形成电子照相图像的方法
公开(公告)号：US4985328A
公开(公告)日：1991-01-15
申请号：US410416
申请日：1989-09-21
申请人： Yuugo Kumagai , Ryouji Tan , Takashi Ikeda , Tetsuya Fujii , Chiaki Okada , Osamu Higashida , Hatuo Sugitani , Masato Fukasawa
发明人： Yuugo Kumagai , Ryouji Tan , Takashi Ikeda , Tetsuya Fujii , Chiaki Okada , Osamu Higashida , Hatuo Sugitani , Masato Fukasawa
IPC分类号： G03G9/09 , G03G9/097
CPC分类号： G03G9/09783 , G03G9/091 , Y10S430/104
摘要： A dry toner composition comprising (A) a binder resin, (B) a colorant and (C) charge control agents comprising a special metal complex of oxycarboxylic acid (C-1) and a special metal complex of azo compound (C-2) can provide high quality images without causing toner flying even after printed for a long period of time, and thus is useful for providing a dry developer and a process for forming images using said dry developer.

26. 发明授权

US09293344B2 Cmp polishing slurry and method of polishing substrate 有权
标题翻译： CMP抛光浆料和抛光底物的方法
公开(公告)号：US09293344B2
公开(公告)日：2016-03-22
申请号：US11572523
申请日：2005-07-20
申请人： Masato Fukasawa , Naoyuki Koyama , Yasushi Kurata , Kouji Haga , Toshiaki Akutsu , Yuuto Ootsuki
发明人： Masato Fukasawa , Naoyuki Koyama , Yasushi Kurata , Kouji Haga , Toshiaki Akutsu , Yuuto Ootsuki
IPC分类号： C09K13/00 , B24B1/00 , H01L21/3105 , C09G1/02 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. The present invention provides a polishing slurry and a polishing method allowing polishing efficiently uniformly at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation.
摘要翻译：本发明涉及包含氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中所述水溶性聚合物是在含有至少一种具有不饱和双键及其盐通过使用阳离子偶氮化合物及其盐中的至少一种作为聚合引发剂。本发明提供一种研磨浆料和抛光方法，其能够高速均匀地进行抛光而无划伤，并且还能够使用CMP层叠电介质膜，BPSG膜和用于浅沟槽隔离的绝缘膜的CMP技术进行简单的处理管理。

27. 发明授权

US08501625B2 Polishing liquid for metal film and polishing method 失效
标题翻译：抛光液用于金属膜和抛光方法
公开(公告)号：US08501625B2
公开(公告)日：2013-08-06
申请号：US12668096
申请日：2008-07-08
申请人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
发明人： Kouji Haga , Masato Fukasawa , Jin Amanokura , Hiroshi Nakagawa
IPC分类号： C09G1/02 , C09G1/04
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212
摘要： The invention relates to a polishing liquid for metal film comprising 7.0% by weight or more of an oxidizer for metal, a water-soluble polymer, an oxidized metal dissolving agent, a metal anticorrosive agent and water, provided that the total amount of the polishing liquid for metal film is 100% by weight, wherein the water-soluble polymer has a weight average molecular weight of 150,000 or more and is at least one member selected from among a polycarboxylic acid, a salt of a polycarboxylic acid, and a polycarboxylic acid ester. According to the invention, provided is a polishing liquid for metal film, by which polishing can be performed at a high rate even under a polishing pressure as low as 1 psi or lower, and such that a polished film after polishing is excellent in planarity, furthermore, with which a high polishing rate can be obtained even in an initial stage of polishing, and provided is a polishing method using the polishing liquid.
摘要翻译：本发明涉及一种用于金属膜的抛光液，其包含7.0重量％或更多的金属氧化剂，水溶性聚合物，氧化金属溶解剂，金属防腐剂和水，条件是抛光总量金属膜用液体为100重量％，其中，所述水溶性聚合物的重均分子量为15万以上，为选自多元羧酸，多元羧酸和多元羧酸中的至少1种酯。根据本发明，提供了一种用于金属膜的抛光液，即使在低至1psi或更低的抛光压力下也可以以高速率进行抛光，并且抛光后的抛光膜的平面度优异，此外，即使在研磨的初始阶段也可以获得高抛光速率，并且提供了使用抛光液的抛光方法。

28. 发明申请

US20120064721A1 POLISHING SLURRY AND POLISHING METHOD 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US20120064721A1
公开(公告)日：2012-03-15
申请号：US13299699
申请日：2011-11-18
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料，优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

29. 发明授权

US08084363B2 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US08084363B2
公开(公告)日：2011-12-27
申请号：US12320752
申请日：2009-02-04
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料，优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

30. 发明申请

US20110104992A1 POLISHING SOLUTION FOR METAL FILMS AND POLISHING METHOD USING THE SAME 有权
标题翻译：用于金属膜的抛光方法和使用该方法的抛光方法
公开(公告)号：US20110104992A1
公开(公告)日：2011-05-05
申请号：US12937773
申请日：2009-04-13
申请人： Kouji Haga , Masato Fukasawa , Hiroshi Nakagawa , Kouji Mishima
发明人： Kouji Haga , Masato Fukasawa , Hiroshi Nakagawa , Kouji Mishima
IPC分类号： B24B1/00 , C09K13/00
CPC分类号： H01L21/3212 , C09G1/02
摘要： A polishing solution for metal films that comprises an oxidizing agent, a metal oxide solubilizer, a metal corrosion preventing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a copolymer of acrylic acid and methacrylic acid, the copolymerization ratio of methacrylic acid in the copolymer being 1-20 mol % based on the total of acrylic acid and methacrylic acid.
摘要翻译：一种用于金属膜的抛光溶液，其包含氧化剂，金属氧化物增溶剂，金属防腐剂，水溶性聚合物和水，其中所述水溶性聚合物是丙烯酸和甲基丙烯酸的共聚物，所述共聚比的共聚物中的甲基丙烯酸为1-20摩尔％，基于丙烯酸和甲基丙烯酸的总量。

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