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21. 发明申请

US20120037316A1 METHOD OF SUPPLYING ETCHING GAS AND ETCHING APPARATUS 有权
标题翻译：提供蚀刻气体和蚀刻装置的方法
公开(公告)号：US20120037316A1
公开(公告)日：2012-02-16
申请号：US13206875
申请日：2011-08-10
申请人： Masahiro OGASAWARA , Yoshiyuki KATO , Hideki MIZUNO , Yoshinobu HAYAKAWA
发明人： Masahiro OGASAWARA , Yoshiyuki KATO , Hideki MIZUNO , Yoshinobu HAYAKAWA
IPC分类号： C23F1/08 , B65B65/00
CPC分类号： H01L21/30655 , H01J37/32091 , H01J37/32449 , H01J2237/3341
摘要： A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container.
摘要翻译：提供蚀刻气体的方法包括：将用于蚀刻工艺的第一蚀刻气体供应到处理容器中; 并且将在蚀刻工艺中使用的第二蚀刻气体供应到处理容器中，其中当第一蚀刻气体和第二蚀刻气体在其之间切换时，仅仅少量的气体作为蚀刻气体切换并且不需要切换之后的蚀刻气体，被连续地供给到处理容器中。

22. 发明申请

US20110214813A1 PLASMA PROCESSING METHOD AND APPARATUS 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US20110214813A1
公开(公告)日：2011-09-08
申请号：US13108612
申请日：2011-05-16
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： H01L21/00 , C23F1/08
CPC分类号： H01J37/32082 , H01J37/32422 , H01J37/32935
摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
摘要翻译：等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。通过该等离子体对衬底进行预定的等离子体处理。等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态。

23. 发明申请

US20100218786A1 CLEANING METHOD OF PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体处理装置和储存介质的清洁方法
公开(公告)号：US20100218786A1
公开(公告)日：2010-09-02
申请号：US12711602
申请日：2010-02-24
申请人： Masahiro Ogasawara , Kenji Tago , Junichi Sasaki , Mafumi Sato
发明人： Masahiro Ogasawara , Kenji Tago , Junichi Sasaki , Mafumi Sato
IPC分类号： B08B7/00 , G05D11/02
CPC分类号： H01J37/32862 , H01J37/32091
摘要： Provided are a storage medium and a cleaning method of a plasma processing apparatus capable of more securely removing a deposit and preventing occurrence of any problems caused by a remaining deposit as compared to the conventional method. A cleaning gas which contains an oxygen gas and a nitrogen gas and has a ratio of “nitrogen gas flow rate/(nitrogen gas flow rate+oxygen gas flow rate)” in a range from about 0.05 to about 0.5 is introduced into a processing chamber when a substrate is not mounted on a mounting table, and, then, the inside of the processing chamber is cleaned by applying a high frequency power between the mounting table and an upper electrode and exciting the cleaning gas into plasma.
摘要翻译：提供了一种等离子体处理装置的存储介质和清洁方法，其能够更安全地除去沉积物并且防止与常规方法相比存在由剩余沉积物引起的任何问题的发生。将含有氧气和氮气并且具有在约0.05至约0.5的范围内的“氮气流量/（氮气流量+氧气流量）”的比率的清洁气体引入处理室当基板未安装在安装台上时，然后通过在安装台和上电极之间施加高频电力并将清洁气体激发成等离子体来清洁处理室的内部。

24. 发明申请

US20100152645A1 Facial Hair-Growth Device and Facial Hair-Growth System 审中-公开
标题翻译：面部毛发生长装置和面部发育生长系统
公开(公告)号：US20100152645A1
公开(公告)日：2010-06-17
申请号：US12522531
申请日：2008-01-04
申请人： Masahiro Ogasawara
发明人： Masahiro Ogasawara
IPC分类号： A61N5/06 , A61N1/30
CPC分类号： A61N5/0617 , A61N1/30 , A61N2005/0644 , A61N2005/0652 , A61N2005/0662 , A61N2005/0663
摘要： Compared to a conventional halogen lamp and optical filter, wavelength range of a light is narrowed, throughput of a desired wavelength range is increased, and irradiation of a light of a different wavelength range is enabled. The present apparatus for facial treatment and hair restoration is a combination of a light source means, which is a light source of a monochromatic light of an ultra narrow bandwidth having a half bandwidth of 10 nm or less emitted from a monochromatic LED light source, a monochromatic laser diode light source, or a laser light source, and a diffusion means. Specifically, in a case where the LED light source is used, the apparatus includes a bandpass filter for focusing the wavelength range of each light emitted from the light source and a diffusion lens for diffusing a light which passed through the filter and has an ultra narrow bandwidth with a half bandwidth of 10 nm or less.
摘要翻译：与传统的卤素灯和滤光器相比，光的波长范围变窄，所需波长范围的产量增加，并且能够照射不同波长范围的光。本发明的面部护理和头发修复装置是一种光源装置，其是从单色LED光源发射的具有10nm以下的半带宽的超窄带宽的单色光的光源，单色激光二极管光源或激光光源，以及扩散装置。具体地，在使用LED光源的情况下，该装置包括：带通滤波器，用于聚焦从光源发射的每个光的波长范围和漫射透镜，用于漫射通过滤光器的光并具有超窄半带宽为10nm以下的带宽。

25. 发明申请

US20100043974A1 PLASMA PROCESSING METHOD AND APPARATUS 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20100043974A1
公开(公告)日：2010-02-25
申请号：US12607828
申请日：2009-10-28
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： H01L21/465
CPC分类号： H01J37/32082 , H01J37/32422 , H01J37/32935
摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.
摘要翻译：等离子体处理方法被布置成将预定的处理气体供给到其中放置目标衬底的等离子体产生空间中，并将处理气体转化为等离子体。通过该等离子体对衬底进行预定的等离子体处理。等离子体的密度的空间分布和等离子体中的自由基密度的空间分布相对于衬底彼此独立地通过与衬底相对的面对部分彼此独立地控制，以在衬底的整个靶表面上形成预定的工艺状态。

26. 发明申请

US20060213616A1 Plasma etching method, plasma etching apparatus, control program, computer recording medium and recording medium having processing recipe recorded thereon 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置，控制程序，计算机记录介质和记录有处理配方的记录介质
公开(公告)号：US20060213616A1
公开(公告)日：2006-09-28
申请号：US11390449
申请日：2006-03-28
申请人： Masahiro Ogasawara
发明人： Masahiro Ogasawara
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/32935
摘要： In a first step and a thirst step, etching gases are used which contain fluorocarbon gases having C/F atom number ratios higher than that in a second step. A hole is formed to a midpoint in a silicon oxide film in the first step, the hole is formed until a base SiN film begins to be exposed or immediately before it is exposed in the second step, and overetching is performed in the third step. This enables even a hole having a fine diameter and a high aspect ratio to be formed in an excellent shape.
摘要翻译：在第一步和第一步骤中，使用含有比第二步高的C / F原子数比的碳氟化合物气体的蚀刻气体。在第一步骤中，在氧化硅膜的中点形成孔，直到基底SiN膜开始露出或在第二工序中暴露之前立即形成孔，并且在第3工序中进行过蚀刻。这使得即使形成具有良好形状的细径和高纵横比的孔。

27. 发明申请

US20060000803A1 Plasma processing method and apparatus 审中-公开
公开(公告)号：US20060000803A1
公开(公告)日：2006-01-05
申请号：US11137673
申请日：2005-05-26
申请人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
发明人： Akira Koshiishi , Jun Hirose , Masahiro Ogasawara , Taichi Hirano , Hiromitsu Sasaki , Tetsuo Yoshida , Michishige Saito , Hiroyuki Ishihara , Jun Ooyabu , Kohji Numata
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32422 , H01J37/32935
摘要： A plasma processing method is arranged to supply a predetermined process gas into a plasma generation space in which a target substrate is placed, and turn the process gas into plasma. The substrate is subjected to a predetermined plasma process by this plasma. The spatial distribution of density of the plasma and the spatial distribution of density of radicals in the plasma are controlled independently of each other relative to the substrate by a facing portion opposite the substrate to form a predetermined process state over the entire target surface of the substrate.

28. 发明授权

US5770098A Etching process 失效
标题翻译：蚀刻工艺
公开(公告)号：US5770098A
公开(公告)日：1998-06-23
申请号：US212579
申请日：1994-03-16
申请人： Yoichi Araki , Koichiro Inazawa , Sachiko Furuya , Masahiro Ogasawara , Chishio Koshimizu , Tiejun Song
发明人： Yoichi Araki , Koichiro Inazawa , Sachiko Furuya , Masahiro Ogasawara , Chishio Koshimizu , Tiejun Song
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/31116
摘要： In order to etch an object to be processed, such as a semiconductor wafer, the object to be processed is placed in a vacuum processing chamber, an etching gas is introduced into the vacuum processing chamber, and electrical power is applied to a pair of electrodes within the vacuum processing chamber by a high-frequency electrical power source. A mixed gas of carbon monoxide and a gas which does not contain hydrogen and which contains at least one element from the group IV elements and at least one element from group VII elements is used as the etching gas. A halogenated carbon gas, typically a fluorocarbon such as C.sub.4 F.sub.8, is used as the gas containing elements from the group IV and group VII elements. The concentration of carbon monoxide in the etching gas could be 50% or more. At least approximately 86% of an inert gas, such as argon, xenon, krypton, or N.sub.2 and O.sub.2 could be added to the etching gas. Use of the above etching gas enables a high etching selectivity and prevents the formation of fences.
摘要翻译：为了蚀刻诸如半导体晶片的待处理对象，将待处理对象放置在真空处理室中，将蚀刻气体引入真空处理室，并且将电力施加到一对电极在真空处理室内由高频电源。作为蚀刻气体，使用一氧化碳和不含氢的含有IV族元素中的至少一种元素和来自VII族元素的至少一种元素的混合气体。通常使用碳氟化合物如C4F8的卤代碳气作为来自IV族和VII族元素的含气体。蚀刻气体中一氧化碳的浓度可以为50％以上。至少约86％的惰性气体，例如氩气，氙气，氪气，或N 2和O 2可以添加到蚀刻气体中。使用上述蚀刻气体能够实现高蚀刻选择性并防止栅栏的形成。

29. 发明授权

US08609549B2 Plasma etching method, plasma etching apparatus, and computer-readable storage medium 有权
标题翻译：等离子体蚀刻方法，等离子体蚀刻装置和计算机可读存储介质
公开(公告)号：US08609549B2
公开(公告)日：2013-12-17
申请号：US13045988
申请日：2011-03-11
申请人： Sungtae Lee , Masahiro Ogasawara , Junichi Sasaki , Naohito Yanagida
发明人： Sungtae Lee , Masahiro Ogasawara , Junichi Sasaki , Naohito Yanagida
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/31144 , H01J37/32091
摘要： A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14.
摘要翻译：提供了一种等离子体蚀刻方法，用于通过在非晶碳膜的图案作为最终掩模的非晶碳膜上形成的氧化硅膜或氮化硅膜上进行等离子体蚀刻，所述多层掩模包括具有预定图案，在光致抗蚀剂层下形成的有机底部防反射涂层（BARC）膜，在BARC膜下面形成的SiON膜和形成在SiON膜下面的无定形碳膜。在氧化硅膜或氮化硅膜的等离子体蚀刻开始时使用的初始掩模是在无定形碳膜上残留SiON膜的状态和无定形碳膜的膜厚比残留SiON膜的膜厚小于或等于约14。

30. 发明申请

US20130029493A1 PLASMA ETCHING METHOD, CONTROL PROGRAM AND COMPUTER STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法，控制程序和计算机存储介质
公开(公告)号：US20130029493A1
公开(公告)日：2013-01-31
申请号：US13644619
申请日：2012-10-04
申请人： Masahiro OGASAWARA , Sungtae Lee
发明人： Masahiro OGASAWARA , Sungtae Lee
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144 , H01J37/32091 , H01J37/32935 , H01L21/0337 , H01L21/31116 , H01L21/31122
摘要： A plasma etching method, for plasma-etching a target substrate including at least a film to be etched, an organic film to become a mask of the to-be-etched film, and a Si-containing film which are stacked in order from bottom, includes the first organic film etching step, the treatment step and the second organic film etching step when the organic film is etched to form a mask pattern of the to-be-etched film. In the first organic film etching step, a portion of the organic film is etched. In the treatment step, the Si-containing film and the organic film are exposed to plasma of a rare gas after the first organic film etching step. In the second organic film etching step, the remaining portion of the organic film is etched after the treatment step.
摘要翻译：一种等离子体蚀刻方法，用于等离子体蚀刻至少包括要蚀刻的膜的目标衬底，成为被蚀刻膜的掩模的有机膜和从底部依次层叠的含Si膜包括第一有机膜蚀刻步骤，处理步骤和第二有机膜蚀刻步骤，当有机膜被蚀刻以形成被蚀刻膜的掩模图案时。在第一有机膜蚀刻步骤中，有机膜的一部分被蚀刻。在处理步骤中，在第一有机膜蚀刻步骤之后，将含Si膜和有机膜暴露于稀有气体的等离子体。在第二有机膜蚀刻步骤中，在处理步骤之后蚀刻剩余部分有机膜。

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