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21. 发明申请

US20080194070A1 Metal-oxide-semiconductor transistor device, manufacturing method thereof, and method of improving drain current thereof 审中-公开
标题翻译：金属氧化物半导体晶体管器件及其制造方法及其漏电流的改善方法
公开(公告)号：US20080194070A1
公开(公告)日：2008-08-14
申请号：US12108519
申请日：2008-04-24
申请人： Hung-Lin Shih , Jih-Shun Chiang , Hsien-Liang Meng
发明人： Hung-Lin Shih , Jih-Shun Chiang , Hsien-Liang Meng
IPC分类号： H01L21/336
CPC分类号： H01L21/823878 , H01L21/823807 , H01L29/665 , H01L29/66651 , H01L29/7843
摘要： A method of manufacturing a metal-oxide-semiconductor transistor device is disclosed, in which, an insulation region is formed to define the insulation region and an active region, wherein the active region is adjacent to the insulation region and electrically insulated by the insulation region. A selective epitaxial process is performed to form an epitaxial layer on the active region; wherein the epitaxial layer laterally extends onto a surface of a peripheral portion of the insulation region. Thereafter, a doped well is formed in the semiconductor substrate of the active region. A gate structure is formed on the epitaxial layer. Finally, a drain/source region is formed in the semiconductor substrate and the epitaxial layer at a side of the gate structure.
摘要翻译：公开了一种制造金属氧化物半导体晶体管器件的方法，其中形成绝缘区域以限定绝缘区域和有源区域，其中有源区域与绝缘区域相邻并且被绝缘区域电绝缘。执行选择性外延工艺以在有源区上形成外延层; 其中所述外延层横向延伸到所述绝缘区域的周边部分的表面上。此后，在有源区的半导体衬底中形成掺杂阱。栅极结构形成在外延层上。最后，半导体衬底和栅极结构侧的外延层形成漏极/源极区。

22. 发明申请

US20080164529A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080164529A1
公开(公告)日：2008-07-10
申请号：US11620984
申请日：2007-01-08
申请人： CHIN-HSIANG LIN , CHIA-JUNG HSU , LI-WEI CHENG , HSIEN-LIANG MENG , MING-TE WEI , CHE-HUA HSU
发明人： CHIN-HSIANG LIN , CHIA-JUNG HSU , LI-WEI CHENG , HSIEN-LIANG MENG , MING-TE WEI , CHE-HUA HSU
IPC分类号： H01L27/092 , H01L21/28
CPC分类号： H01L21/823835 , H01L21/28097 , H01L29/4975 , H01L29/517 , H01L29/665 , H01L29/66545
摘要： A semiconductor device having dual fully-silicided gate is provided, which includes a first transistor, a second transistor, a dielectric layer, and an interlayer insulating layer. The first transistor is disposed on the substrate, which includes a first silicided gate and a first source/drain. The second transistor is disposed on the substrate, which includes a second silicided gate and a second source/drain. The material of the first silicided gate is different from the material of the second silicided gate. The first silicided gate and the second silicided gate are formed in one silicidation process. The dielectric layer completely covers the first transistor and the second transistor. The interlayer insulating layer is disposed on the dielectric layer.
摘要翻译：提供了具有双全硅化栅的半导体器件，其包括第一晶体管，第二晶体管，电介质层和层间绝缘层。第一晶体管设置在基板上，其包括第一硅化栅极和第一源极/漏极。第二晶体管设置在基板上，该基板包括第二硅化栅极和第二源极/漏极。第一硅化物栅极的材料与第二硅化物栅极的材料不同。第一硅化栅和第二硅化栅在一个硅化工艺中形成。电介质层完全覆盖第一晶体管和第二晶体管。层间绝缘层设置在电介质层上。

23. 发明授权

US06187692B1 Method for forming an insulating film 有权
标题翻译：绝缘膜的形成方法
公开(公告)号：US06187692B1
公开(公告)日：2001-02-13
申请号：US09187112
申请日：1998-11-05
申请人： Shih-Ming Lan , Chun-Liang Liu , Andrew Lin , Hsien-Liang Meng
发明人： Shih-Ming Lan , Chun-Liang Liu , Andrew Lin , Hsien-Liang Meng
IPC分类号： H01L2131
CPC分类号： H01L21/02164 , C23C16/401 , C23C16/45557 , H01L21/022 , H01L21/02271 , H01L21/31612
摘要： A method for forming an insulating layer to solve a problem of non-uniform thickness of the insulating layer is provided. The method includes forming a first insulating layer over a substrate preferably by chemical vapor deposition (CVD) at an operation temperature of about 200° C.-350° C. The thickness of the first insulating layer is about 500 Å-5000 Å. A second insulating layer is formed over the first insulating layer preferably by CVD at a temperature of about 350° C.-500° C. The thickness of the second insulating layer is about 1000 Å-10000 Å. The first and the second insulating layers form together as an insulating layer to insulate transistors and isolation structures from the interconnect metal layer.
摘要翻译：提供一种用于形成绝缘层以解决绝缘层的不均匀厚度的问题的方法。该方法包括在约200℃-350℃的操作温度下优选通过化学气相沉积（CVD）在衬底上形成第一绝缘层。第一绝缘层的厚度为约500至5000。优选通过CVD在约350℃-500℃的温度下在第一绝缘层上形成第二绝缘层。第二绝缘层的厚度为约1000埃。第一和第二绝缘层一起形成绝缘层，以使晶体管和隔离结构与互连金属层绝缘。

24. 发明申请

US20150103074A1 METHOD AND APPARATUS FOR GENERATING SHAPE DESCRIPTOR OF A MODEL 有权
标题翻译：用于生成模型的形状描述符的方法和装置
公开(公告)号：US20150103074A1
公开(公告)日：2015-04-16
申请号：US14402186
申请日：2012-05-22
申请人： Kangying Cai , Wei Liang Meng , Tao Luo
发明人： Kangying Cai , Wei Liang Meng , Tao Luo
IPC分类号： G06T17/05 , G06T17/30
CPC分类号： G06T17/00 , G06K9/00201 , G06K9/48 , G06T17/30
摘要： The invention provides a method for generating an n dimensional vector as a shape descriptor of a model, and corresponding apparatus and shape descriptor. The method comprises: determining a type element of the vector to describe the basic shape of the model; and calculating n−1 metric elements of the vector, each of which represents the percentage of all of a feature of the model falling into one of n−1 layers divided as a function of the type element.
摘要翻译：本发明提供了一种用于生成作为模型的形状描述符的n维向量以及对应的装置和形状描述符的方法。该方法包括：确定向量的类型元素来描述模型的基本形状; 并计算向量的n-1个度量元素，每个元素表示作为类型元素的函数划分的n-1层中的一个模型的所有模型的特征的百分比。

25. 发明授权

US08746926B2 Illuminating device and method for manufacturing the same 失效
公开(公告)号：US08746926B2
公开(公告)日：2014-06-10
申请号：US14102325
申请日：2013-12-10
申请人： Liang Meng Plastic Share Co., Ltd.
发明人： Kuang-Chu Lai
IPC分类号： F21V21/00 , H01L33/00
CPC分类号： H01L33/00 , F21K9/00 , F21V21/00 , F21V29/70 , F21V29/713 , F21V31/04 , F21Y2105/10 , F21Y2115/10
摘要： A method for manufacturing an illuminating device includes steps of: forming an electrical conductive circuit on a metallic substrate, arranging light-emitting elements on the metallic substrate to be electrically connected with the electrical conductive circuit, covering a transparent cap on each of the light-emitting elements, fixing an electrical connector to the metallic substrate to be electrically connected to the electrical conductive circuit, forming a transparent body outside the transparent caps, the metallic substrate and the electrical conductive circuit by means of an over-molding process; forming a lamp cover outside the transparent body, the metallic substrate and the electrical connector by means of an over-molding process. An illuminating device is further provided, thereby prevents the light-emitting elements from suffering damage due to the temperature and pressure of the over-molding process, and increasing the brightness of the light emitted by the light-emitting elements.

26. 发明授权

US08678617B2 Illuminating device and method for manufacturing the same 失效
标题翻译：照明装置及其制造方法
公开(公告)号：US08678617B2
公开(公告)日：2014-03-25
申请号：US13645487
申请日：2012-10-04
申请人： Liang Meng Plastic Share Co., Ltd.
发明人： Kuang-Chu Lai
IPC分类号： F21V21/00
CPC分类号： H01L33/00 , F21K9/00 , F21V21/00 , F21V29/70 , F21V29/713 , F21V31/04 , F21Y2105/10 , F21Y2115/10
摘要： A method for manufacturing an illuminating device includes steps of: forming an electrical conductive circuit on a metallic substrate, arranging light-emitting elements on the metallic substrate to be electrically connected with the electrical conductive circuit, covering a transparent cap on each of the light-emitting elements, fixing an electrical connector to the metallic substrate to be electrically connected to the electrical conductive circuit, forming a transparent body outside the transparent caps, the metallic substrate and the electrical conductive circuit by means of an over-molding process; forming a lamp cover outside the transparent body, the metallic substrate and the electrical connector by means of an over-molding process. An illuminating device is further provided, thereby prevents the light-emitting elements from suffering damage due to the temperature and pressure of the over-molding process, and increasing the brightness of the light emitted by the light-emitting elements.
摘要翻译：一种制造照明装置的方法，包括以下步骤：在金属基板上形成导电电路，在金属基板上排列与导电电路电连接的发光元件，在发光元件的每一个上覆盖透明盖，将电连接器固定到金属基板上以与导电电路电连接，通过过度成型工艺在透明盖，金属基板和导电电路外部形成透明体; 通过超模制工艺在透明体外部，金属基底和电连接器上形成灯罩。还提供一种照明装置，从而防止发光元件由于过度模制过程的温度和压力而受到损坏，并且增加了由发光元件发射的光的亮度。

27. 发明申请

US20090016751A1 METHOD AND APPARATUS FOR CLEANING ATTACHMENT ON TRANSFER ROLLER IN AN IMAGE FORMING APPARATUS 审中-公开
标题翻译：用于清洁图像形成装置中的转印辊的方法和装置
公开(公告)号：US20090016751A1
公开(公告)日：2009-01-15
申请号：US11775855
申请日：2007-07-10
申请人： Yen-Liang Meng , Cheng-Chin Chen
发明人： Yen-Liang Meng , Cheng-Chin Chen
IPC分类号： G03G15/02 , G03G15/16
CPC分类号： G03G15/1635 , G03G15/0266 , G03G15/168 , G03G2215/1614 , G03G2215/1652
摘要： An image forming apparatus includes a photoconductor, a transfer roller, and a power supply for providing a voltage signal for the transfer roller to transfer surface attachments on the transfer roller to the photoconductor. Moreover, before providing the voltage signal for the transfer roller, a surface voltage level of the photoconductor can be adjusted according to the voltage signal in order to ensure that the surface voltage level of the photo conductor can be kept in a safe charging range. Therefore, the transferring efficiency of the transfer roller is ensured and damage to the photo conductor is prevented.
摘要翻译：图像形成装置包括光电导体，转印辊和用于为转印辊提供电压信号以将转印辊上的表面附着物转印到光电导体的电源。此外，在为转印辊提供电压信号之前，可以根据电压信号调整光电导体的表面电压电平，以确保光导体的表面电压电平可以保持在安全的充电范围内。因此，确保转印辊的转印效率，并且防止对光导体的损坏。

28. 发明授权

US07402496B2 Complementary metal-oxide-semiconductor device and fabricating method thereof 有权
标题翻译：互补金属氧化物半导体器件及其制造方法
公开(公告)号：US07402496B2
公开(公告)日：2008-07-22
申请号：US11530480
申请日：2006-09-11
申请人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
发明人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
IPC分类号： H01L21/336
CPC分类号： H01L29/7843 , H01L21/823807 , H01L21/823814 , H01L21/823864 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7834
摘要： A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.
摘要翻译：互补金属氧化物半导体（CMOS）器件包括具有第一有源区和第二有源区的衬底; 分别设置在所述第一有源区和所述第二有源区上的第一栅极结构和第二栅极结构; 分别设置在第一栅极结构和第二栅极结构的侧壁上的第一间隔结构和第二间隔结构; 在第一栅极结构和第二栅极结构的两侧分别设置在基板中的第一LDD和第二LDD; 外延材料层，设置在第一有源区并位于第一LDD的一侧; 以及钝化层，设置在所述第一栅极结构上，所述第一间隔结构和所述第一LDD并且覆盖所述第二有源区，其中所述钝化层包含含碳氮氧化物层。

29. 发明申请

US20080170883A1 Image-Forming Device and Developing Method Thereof 审中-公开
标题翻译：图像形成装置及其开发方法
公开(公告)号：US20080170883A1
公开(公告)日：2008-07-17
申请号：US11623201
申请日：2007-01-15
申请人： Cheng-Chih Chen , Hui-Chun Lee , Yen-Liang Meng
发明人： Cheng-Chih Chen , Hui-Chun Lee , Yen-Liang Meng
IPC分类号： G03G21/00 , G03G15/01
CPC分类号： G03G21/06
摘要： A developing method improves the printed image quality of an image-forming device by removing surplus charge potential to make the surface potential of a photoreceptor charged during first and second charging steps be the same for next developing, or by inputting different voltages to the developing units. An image-forming device is also disclosed.
摘要翻译：显影方法通过去除剩余的电荷电位来提高图像形成装置的打印图像质量，以使得在第一和第二充电步骤期间充电的感光体的表面电位对于下一次显影而相同，或者通过向显影单元输入不同的电压。还公开了一种图像形成装置。

30. 发明申请

US20080116525A1 COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE 审中-公开
标题翻译：补充金属氧化物半导体器件
公开(公告)号：US20080116525A1
公开(公告)日：2008-05-22
申请号：US12024069
申请日：2008-01-31
申请人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
发明人： Che-Hung Liu , Po-Lun Cheng , Chun-An Lin , Li-Yuen Tang , Hung-Lin Shih , Ming-Chi Fan , Hsien-Liang Meng , Jih-Shun Chiang
IPC分类号： H01L27/088
CPC分类号： H01L21/823814 , H01L21/823807 , H01L27/092 , H01L29/6656 , H01L29/66636 , H01L29/7834 , H01L29/7843 , H01L29/7848
摘要： A complementary metal-oxide-semiconductor (CMOS) device includes a substrate with a first active region and a second active region; a first gate structure and a second gate structure, respectively disposed on the first active region and the second active region; a first spacer structure and a second spacer structure respectively disposed on sidewalls of the first gate structure and the second gate structure; a first LDD and a second LDD respectively disposed in the substrate at both sides of the first gate structure and the second gate structure; an epitaxial material layer, disposed in the first active region and located on a side of the first LDD; and a passivation layer, disposed on the first gate structure, the first spacer structure, and the first LDD and covering the second active region, wherein the passivation layer comprises a carbon-containing oxynitride layer.
摘要翻译：互补金属氧化物半导体（CMOS）器件包括具有第一有源区和第二有源区的衬底; 分别设置在所述第一有源区和所述第二有源区上的第一栅极结构和第二栅极结构; 分别设置在第一栅极结构和第二栅极结构的侧壁上的第一间隔结构和第二间隔结构; 在第一栅极结构和第二栅极结构的两侧分别设置在基板中的第一LDD和第二LDD; 外延材料层，设置在第一有源区并位于第一LDD的一侧; 以及钝化层，设置在所述第一栅极结构上，所述第一间隔结构和所述第一LDD并且覆盖所述第二有源区，其中所述钝化层包含含碳氮氧化物层。

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