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    • 27. 发明申请
    • SEMICONDUCTOR DEVICE MANUFACTURING METHOD
    • 半导体器件制造方法
    • US20120328992A1
    • 2012-12-27
    • US13606834
    • 2012-09-07
    • Kazuya FukuharaTakaki HashimotoKazuyuki MasukawaYasunobu Kai
    • Kazuya FukuharaTakaki HashimotoKazuyuki MasukawaYasunobu Kai
    • G03F7/20
    • G03F1/00G03F1/36G03F7/70433
    • A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.
    • 一种半导体器件制造方法,包括将照明光施加到光掩模,以及经由投影光学系统从光掩模投射衍射光成分,以在基板上形成光刻胶图案。 光掩模包括多个开口图案,其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上,并且在垂直于第二方向的第一方向上具有规则的第一间隔。 布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。 此外,设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率,使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。
    • 30. 发明授权
    • Method of determining photo mask, method of manufacturing semiconductor device, and computer program product
    • 确定光掩模的方法,制造半导体器件的方法以及计算机程序产品
    • US07925090B2
    • 2011-04-12
    • US11601797
    • 2006-11-20
    • Toshiya KotaniKazuya FukuharaKyoko Izuha
    • Toshiya KotaniKazuya FukuharaKyoko Izuha
    • G06K9/34
    • G03F7/70441
    • A method of determining a photo mask, includes specifying a mask pattern for a photo mask for a first exposure apparatus, specifying a plurality of exposure conditions allowed to be set for a second exposure apparatus, predicting a projection image of the mask pattern to be projected on a substrate by the second exposure apparatus, for each of the exposure conditions, predicting a processed pattern to be formed on a substrate surface on the basis of the projection image, for each of the exposure conditions, determining whether or not the processed pattern meets a predetermined condition for each of the exposure conditions, and determining that the photo mask is applicable to the second exposure apparatus if the processed pattern meets the predetermined condition for at least one of the exposure conditions.
    • 一种确定光掩模的方法包括:为第一曝光装置指定用于光掩模的掩模图案,指定允许为第二曝光装置设置的多个曝光条件,预测要投影的掩模图案的投影图像 在第二曝光装置的基板上,对于每个曝光条件,对于每个曝光条件,基于投影图像预测要在基板表面上形成的处理图案,确定处理图案是否满足 对于每个曝光条件的预定条件,并且如果处理的图案满足至少一个曝光条件的预定条件,则确定光掩模适用于第二曝光装置。