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21. 发明申请

US20130105788A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE 审中-公开
标题翻译：氧化物半导体，薄膜晶体管和显示器件
公开(公告)号：US20130105788A1
公开(公告)日：2013-05-02
申请号：US13393335
申请日：2010-05-06
申请人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Takeshi Hara , Okifumi Nakagawa , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Yoshiyuki Harumoto , Kazuo Nakagawa , Hinae Mizuno
发明人： Yoshimasa Chikama , Hirohiko Nishiki , Yoshifumi Ohta , Yuuji Mizuno , Takeshi Hara , Okifumi Nakagawa , Tetsuya Aita , Masahiko Suzuki , Michiko Takei , Yoshiyuki Harumoto , Kazuo Nakagawa
IPC分类号： H01L29/786
CPC分类号： H01L29/786 , G02F1/1368 , H01L29/7869
摘要： The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property and credibility, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Si, In, Zn, and O as constituent atoms.
摘要翻译：本发明提供一种能够实现电性能和可靠性优异的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管，以及配备有该薄膜晶体管的显示装置。本发明的氧化物半导体是用于薄膜晶体管的氧化物半导体，并且包括Si，In，Zn和O作为构成原子。

22. 发明申请

US20130099227A1 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE 审中-公开
标题翻译：氧化物半导体，薄膜晶体管和显示器件
公开(公告)号：US20130099227A1
公开(公告)日：2013-04-25
申请号：US13394343
申请日：2010-04-22
申请人： Okifumi Nakagawa , Hirohiko Nishiki , Yoshimasa Chikama , Yoshifumi Ohta , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Kazuo Nakagawa , Michiko Takei , Yoshiyuki Harumoto , Hinae Mizuno
发明人： Okifumi Nakagawa , Hirohiko Nishiki , Yoshimasa Chikama , Yoshifumi Ohta , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Kazuo Nakagawa , Yuuji Mizuno , Michiko Takei , Yoshiyuki Harumoto
IPC分类号： H01L29/786
CPC分类号： H01L29/786 , G02F1/1368 , H01L29/7869
摘要： The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms.
摘要翻译：本发明提供能够实现电性能优异的薄膜晶体管的氧化物半导体，具有由氧化物半导体形成的沟道层的薄膜晶体管，以及配备有薄膜晶体管的显示装置。本发明的氧化物半导体是用于薄膜晶体管的氧化物半导体，并且包括Al，In，Zn和O作为构成原子。

23. 发明申请

US20120138923A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, ACTIVE MATRIX SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE 有权
标题翻译：薄膜晶体管，其制造方法，主动矩阵基板，显示面板和显示装置
公开(公告)号：US20120138923A1
公开(公告)日：2012-06-07
申请号：US13379670
申请日：2010-04-06
申请人： Takeshi Hara , Hirohiko Nishiki , Yoshimasa Chikawa , Kazuo Nakagawa , Yoshifumi Ohta , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Yoshiyuki Miyajima , Yuuji Mizuno , Hinae Mizuno , Michiko Takei , Yoshiyuki Harumoto
发明人： Takeshi Hara , Hirohiko Nishiki , Yoshimasa Chikawa , Kazuo Nakagawa , Yoshifumi Ohta , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Yoshiyuki Miyajima , Yuuji Mizuno , Hinae Mizuno , Michiko Takei , Yoshiyuki Harumoto
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1288 , H01L27/1225 , H01L29/7869
摘要： The present invention provides a thin film transistor including an oxide semiconductor layer (4) for electrically connecting a signal electrode (6a) and a drain electrode (7a), the an oxide semiconductor layer being made from an oxide semiconductor; and a barrier layer (6b) made from at least one selected from the group consisting of Ti, Mo, W, Nb, Ta, Cr, nitrides thereof, and alloys thereof, the barrier layer (6b) being in touch with the signal electrode (6a) and the oxide semiconductor layer (4) and separating the signal electrode (6a) from the oxide semiconductor layer (4). Because of this configuration, the thin film transistor can form and maintain an ohmic contact between the first electrode and the channel layer, thereby being a thin film transistor with good properties.
摘要翻译：本发明提供了一种薄膜晶体管，其包括用于电连接信号电极（6a）和漏电极（7a）的氧化物半导体层（4），所述氧化物半导体层由氧化物半导体制成; 以及由选自Ti，Mo，W，Nb，Ta，Cr，氮化物中的至少一种及其合金制成的阻挡层（6b），阻挡层（6b）与信号电极（6a）和氧化物半导体层（4），并且将信号电极（6a）与氧化物半导体层（4）分离。由于这种结构，薄膜晶体管可以在第一电极和沟道层之间形成并保持欧姆接触，从而成为具有良好性能的薄膜晶体管。

24. 发明申请

US20110042693A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110042693A1
公开(公告)日：2011-02-24
申请号：US12933042
申请日：2009-04-09
申请人： Kenshi Tada , Yutaka Takafuji , Yasumori Fukushima , Kazuhide Tomiyasu , Michiko Takei , Kazuo Nakagawa , Shin Matsumoto
发明人： Kenshi Tada , Yutaka Takafuji , Yasumori Fukushima , Kazuhide Tomiyasu , Michiko Takei , Kazuo Nakagawa , Shin Matsumoto
IPC分类号： H01L33/08 , H01L21/762
CPC分类号： H01L27/1266 , H01L21/8221 , H01L21/84 , H01L27/0688 , H01L27/1203 , H01L27/1214
摘要： A semiconductor device (10) includes a support substrate (14), an adhered device part (11) adhered to the support substrate (14), a multilayer device part (13) stacked on the adhered device part (11), and an adjacent device part (12) formed in a region adjacent to the adhered device part on the support substrate (14). The adhered device part (11), the multilayer device part (13), and the adjacent device part (12) are electrically connected to one another.
摘要翻译：半导体装置（10）包括支撑基板（14），粘附到支撑基板（14）的粘合装置部分（11），堆叠在粘附装置部分（11）上的多层装置部分（13）装置部分（12）形成在与支撑基板（14）上的粘附装置部分相邻的区域中。粘合装置部分（11），多层装置部分（13）和相邻装置部分（12）彼此电连接。

25. 发明申请

US20100270658A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100270658A1
公开(公告)日：2010-10-28
申请号：US12746156
申请日：2008-09-12
申请人： Kazuo Nakagawa , Michiko Takei , Yasumori Fukushima , Kazuhide Tomiyasu , Shin Matsumoto , Kenshi Tada , Yutaka Takafuji
发明人： Kazuo Nakagawa , Michiko Takei , Yasumori Fukushima , Kazuhide Tomiyasu , Shin Matsumoto , Kenshi Tada , Yutaka Takafuji
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772 , H01L29/78603 , H01L29/78606
摘要： A method is disclosed for producing a semiconductor device produced by (i) doping hydrogen ions or rare gas ions into a device substrate in which a transfer layer (16) is formed, (ii) then bonding the device substrate to a carrier target substrate, and (iii) transferring the transfer layer (16) onto the carrier substrate (30) by cleaving the device substrate along a portion in which the hydrogen ions or the rare gas ions are doped, the method including providing a blocking layer (11) for blocking diffusion of a bubble-causing substance between (i) a bonding surface (13), which serves as a bonding interface between the device substrate and the carrier substrate, and (ii) the transfer layer (16). This prevents bubbles from forming at the bonding interface between the semiconductor substrate and the target substrate due to the diffusion of the bubble-causing substance.
摘要翻译：公开了一种用于制造半导体器件的方法，该半导体器件通过（i）将氢离子或稀有气体离子掺杂到其中形成转移层（16）的器件衬底中，（ii）然后将器件衬底接合到载体目标衬底，以及（iii）通过沿着掺杂有氢离子或稀有气体离子的部分裂开所述器件衬底，将所述转移层（16）转移到所述载体衬底（30）上，所述方法包括提供用于在（i）用作器件衬底和载体衬底之间的结合界面的接合表面（13）和（ii）转移层（16）之间阻塞气泡引起物质的扩散。这样可防止由于起泡物质的扩散而在半导体衬底与目标衬底之间的结合界面处形成气泡。

26. 发明申请

US20100105867A1 PROCESS FOR PRODUCING OSTEOCALCIN-CONTAINING EXTRACT 审中-公开
标题翻译：生产含有软骨素的提取物的方法
公开(公告)号：US20100105867A1
公开(公告)日：2010-04-29
申请号：US12530270
申请日：2008-03-05
申请人： Hiromu Ohnogi , Shinichi Adachi , Kazuo Nakagawa , Hiroki Iwamoto , Ikunoshin Kato
发明人： Hiromu Ohnogi , Shinichi Adachi , Kazuo Nakagawa , Hiroki Iwamoto , Ikunoshin Kato
IPC分类号： A61K38/16 , A61P1/02 , C07K14/00
CPC分类号： A61K38/39 , A61K35/32
摘要： A process for producing an extract containing activated osteocalcin; an extract which can be obtained by this production process; a food, a drink, a drug, an oral cavity-care composition and a feed containing this extract; and a growth enhancer containing osteocalcin originating in a bone.
摘要翻译：一种生产含有活化骨钙素的提取物的方法; 可以通过该生产过程获得的提取物; 食物，饮料，药物，口腔护理组合物和含有该提取物的饲料; 以及含有源于骨的骨钙素的生长增强剂。

27. 发明授权

US5647535A Method of metallic painting 失效
标题翻译：金属绘画方法
公开(公告)号：US5647535A
公开(公告)日：1997-07-15
申请号：US546884
申请日：1995-10-20
申请人： Daisuke Nakazono , Shuji Monoura , Kazuo Nakagawa
发明人： Daisuke Nakazono , Shuji Monoura , Kazuo Nakagawa
IPC分类号： B05D1/02 , B05D1/04 , B05D5/06 , B05D7/14 , B05B7/04
CPC分类号： B05D1/02 , B05D5/068
摘要： The present invention relates to an efficient method of applying a metallic paint using both an air atomized spray machine and a spin coating machine. In the method of painting, matching the color shade of metallic painting using an air atomized spray machine with the color shade of metallic painting using a spin coating machine is achieved in the following manner. The overall content of the metallic pigment in the metallic paint for said air atomized spray machine and for said spin coating machine is maintained almost the same, but the ratio of the brilliant pigment and the color pigment composing said metallic pigment is varied to increase the content of the brilliant pigment in the metallic paint for the spin coating machine compared with the content in the metallic paint for the air atomized spray machine. The disclosed method enables metallic painting using both an air atomized spray machine and a spin coating machine in combination under the condition of less color difference than has conventionally been possible.
摘要翻译：本发明涉及一种使用空气雾化喷涂机和旋涂机应用金属涂料的有效方法。在绘画方法中，使用旋转涂布机，使用空气雾化喷雾机与金属漆的色调匹配金属漆的色调以下列方式实现。用于所述空气雾化喷涂机和所述旋涂机的金属涂料中的金属颜料的总含量保持几乎相同，但是，改变构成所述金属颜料的辉光颜料和着色颜料的比例以增加含量用于旋涂机的金属涂料中的辉光颜料与用于空气雾化喷涂机的金属涂料的含量相比。所公开的方法能够在比常规可能的色差小的条件下组合使用空气雾化喷雾机和旋涂机的金属喷涂。

28. 发明授权

US5596276A Cavity resonator for an electron spin resonator 失效
标题翻译：用于电子自旋谐振器的腔谐振器
公开(公告)号：US5596276A
公开(公告)日：1997-01-21
申请号：US447928
申请日：1995-05-23
申请人： Kazuo Nakagawa , Makoto Tsuneda , Atsushi Nukanobu , Akio Nakanishi , Akira Furuse
发明人： Kazuo Nakagawa , Makoto Tsuneda , Atsushi Nukanobu , Akio Nakanishi , Akira Furuse
IPC分类号： G01N24/10 , G01R33/345 , G01R33/20
CPC分类号： G01R33/345
摘要： The invention provides a cavity resonator for an electron spin resonance device in which modulation coils for generating a modulation magnetic field to be applied to a sample in the cavity resonator are arranged at an exterior of the cavity resonator. The cavity resonator comprises a body being rectangular-defined by predetermined length, width and height. The body has a pair of side walls being vertical to the modulation magnetic field. The side wall respectively have at least thin portions of a thickness being nearly equal to or less than a skin depth of a skin effect appearing at the side walls. The modulation coils are arranged on the thin portions so as to have the modulation magnetic field be transmitted through the thin portions into the interior of the cavity resonator. Alternatively, it is possible that inner walls of the body are overlaid with metallic foils having at least sufficiently smaller thickness than a skin depth of a skin effect appearing at the walls.
摘要翻译：本发明提供一种用于电子自旋共振装置的空腔谐振器，其中用于产生要施加到空腔谐振器中的样品的调制磁场的调制线圈被布置在空腔谐振器的外部。空腔谐振器包括被预定长度，宽度和高度限定为矩形的本体。主体具有垂直于调制磁场的一对侧壁。侧壁分别具有至少薄的部分，其厚度几乎等于或小于出现在侧壁处的皮肤效应的皮肤深度。调制线圈布置在薄部分上，以使调制磁场通过薄部分传输到空腔谐振器的内部。或者，可能的是，身体的内壁被覆有金属箔，金属箔的厚度至少比出现在墙壁上的皮肤效应的皮肤深度更小。

29. 发明授权

US4982010A Method of producing 4-biphenyl p-tolyl ether 失效
标题翻译：生产4-联苯对甲苯醚的方法
公开(公告)号：US4982010A
公开(公告)日：1991-01-01
申请号：US429433
申请日：1989-10-31
申请人： Naoki Hanayama , Kazuo Nakagawa , Akira Shimada
发明人： Naoki Hanayama , Kazuo Nakagawa , Akira Shimada
IPC分类号： C07C41/16 , C07C43/275
CPC分类号： C07C41/16
摘要： The use of 1,3-dimethyl-2-imidazolidinone or sulfolane as a reaction promoter is effective in the production of 4-biphenylyl p-tolyl ether, which is useful as a sensitizer for heat-sensitive recording paper, by reacting p-phenylphenol with a p-halotoluene in the presence of a copper catalyst.
摘要翻译：使用1,3-二甲基-2-咪唑啉酮或环丁砜作为反应促进剂在制备4-联苯基对甲苯基醚中是有效的，其可用作热敏记录纸的敏化剂，通过使对苯基苯酚在铜催化剂存在下用对卤代甲苯。

30. 发明授权

US08829513B2 Oxide semiconductor including Ga, In, Zn, and O and A thin film transistor and a display with the oxide semiconductor including Ga, In, Zn, and O 有权
标题翻译：包括Ga，In，Zn和O和A薄膜晶体管的氧化物半导体和具有包括Ga，In，Zn和O的氧化物半导体的显示器
公开(公告)号：US08829513B2
公开(公告)日：2014-09-09
申请号：US13391638
申请日：2010-03-29
申请人： Yoshifumi Ota , Hirohiko Nishiki , Yoshimasa Chikama , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Kazuo Nakagawa , Michiko Takei , Yoshiyuki Harumoto , Hinae Mizuno
发明人： Yoshifumi Ota , Hirohiko Nishiki , Yoshimasa Chikama , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Kazuo Nakagawa , Yuuji Mizuno , Michiko Takei , Yoshiyuki Harumoto
IPC分类号： H01L27/12 , H01L29/786 , H01L27/32 , H01L33/00 , G02F1/1368
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/3258 , H01L33/0041
摘要： The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22.
摘要翻译：本发明提供实现电性能和工艺电阻优异的TFT的氧化物半导体，包括由氧化物半导体形成的沟道层的TFT以及配备有TFT的显示装置。本发明的氧化物半导体是用于薄膜晶体管的氧化物半导体，其中氧化物半导体包含Ga（镓），In（铟），Zn（锌）和O（氧）作为构成原子，氧化物半导体 Zn原子组成满足0.01＆nlE; Zn /（In + Zn）＆nlE; 0.22。

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