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21. 发明授权

US07271464B2 Liner for shallow trench isolation 有权
标题翻译：衬垫用于浅沟隔离
公开(公告)号：US07271464B2
公开(公告)日：2007-09-18
申请号：US10925715
申请日：2004-08-24
申请人： Jigish D. Trivedi , Robert D. Patraw , Kevin L. Beaman , John A. Smythe, III
发明人： Jigish D. Trivedi , Robert D. Patraw , Kevin L. Beaman , John A. Smythe, III
IPC分类号： H01L29/00
CPC分类号： H01L21/76224 , H01L21/76227
摘要： A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a silicon nitride barrier is deposited into the trench. The silicon nitride layer has a high nitrogen content near the trench walls to protect the walls. The silicon nitride layer further from the trench walls has a low nitrogen content and a high silicon content, to allow improved adhesion. The trench is then filled with a spin-on precursor. A densification or reaction process is then applied to convert the spin-on material into an insulator. The resulting trench has a well-adhered insulator which helps the insulating properties of the trench.
摘要翻译：提供了将电介质材料沉积到亚微米空间和结构中的方法。在晶片的表面蚀刻沟槽之后，将氮化硅屏障沉积到沟槽中。氮化硅层在沟壁附近具有高氮含量以保护壁。进一步从沟槽壁的氮化硅层具有低的氮含量和高的硅含量，以提高粘附性。然后用旋涂前体填充沟槽。然后施加致密化或反应过程以将旋涂材料转化成绝缘体。所得的沟槽具有良好粘附的绝缘体，其有助于沟槽的绝缘性能。

22. 发明授权

US07112513B2 Sub-micron space liner and densification process 有权
标题翻译：亚微米空间衬垫和致密化过程
公开(公告)号：US07112513B2
公开(公告)日：2006-09-26
申请号：US10782997
申请日：2004-02-19
申请人： John A. Smythe, III , Jigish D. Trivedi
发明人： John A. Smythe, III , Jigish D. Trivedi
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, an oxygen barrier is deposited into the trench. An expandable, oxidizable liner, preferably amorphous silicon, is then deposited. The trench is then filled with a spin-on dielectric (SOD) material. A densification process is then applied, whereby the SOD material contracts and the oxidizable liner expands. Preferably, the temperature is ramped up while oxidizing during at least part of the densification process. The resulting trench has a negligible vertical wet etch rate gradient and a negligible recess at the top of the trench.
摘要翻译：提供了将电介质材料沉积到亚微米空间和结构中的方法。在晶片的表面中蚀刻沟槽之后，将氧势垒沉积到沟槽中。然后沉积可膨胀的可氧化衬垫，优选非晶硅。然后用旋涂电介质（SOD）材料填充沟槽。然后施加致密化过程，由此SOD材料收缩并且可氧化衬里膨胀。优选地，在致密化过程的至少部分期间，温度升高而氧化。所形成的沟槽具有可忽略的垂直湿蚀刻速率梯度和在沟槽顶部的可忽略的凹陷。

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