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21. 发明授权

US07566667B2 Methods of fabricating a semiconductor device having a barrier metal layer and devices formed thereby 失效
标题翻译：制造具有阻挡金属层的半导体器件的方法和由此形成的器件
公开(公告)号：US07566667B2
公开(公告)日：2009-07-28
申请号：US11284653
申请日：2005-11-22
申请人： Eung-Joon Lee , Hyun-Young Kim , In-Sun Park , Hyun-Deok Lee
发明人： Eung-Joon Lee , Hyun-Young Kim , In-Sun Park , Hyun-Deok Lee
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3003 , H01L21/28518 , H01L21/28556 , H01L29/665 , H01L29/78
摘要： A semiconductor device is formed by forming a gate region, including a gate oxide layer, and impurity diffusion regions on a semiconductor substrate, forming a barrier metal layer on the gate region and the impurity diffusion regions of the semiconductor substrate, forming a passivation layer at an interface between the semiconductor substrate and the gate oxide layer to remove defects of the gate oxide layer, and then performing a nitridation process to remove impurities from the semiconductor substrate.
摘要翻译：半导体器件通过在半导体衬底上形成包括栅极氧化层的栅极区域和杂质扩散区域形成，在栅极区域和半导体衬底的杂质扩散区域上形成阻挡金属层，形成钝化层半导体衬底和栅极氧化物层之间的界面，以去除栅极氧化物层的缺陷，然后进行氮化处理以从半导体衬底去除杂质。

22. 发明申请

US20090147189A1 DISPLAY PANEL 审中-公开
标题翻译：显示面板
公开(公告)号：US20090147189A1
公开(公告)日：2009-06-11
申请号：US12263730
申请日：2008-11-03
申请人： Hyun-Young KIM , Joo-Sun Yoon
发明人： Hyun-Young KIM , Joo-Sun Yoon
IPC分类号： G02F1/1335
CPC分类号： G02F1/133707 , G02F2001/134318
摘要： In a display panel, an array substrate includes a pixel electrode disposed in a pixel area and a switching element connected to the pixel electrode. A color filter substrate is combined with the array substrate. The color filter substrate includes a light-blocking layer, a color filter layer, and a common electrode. The color filter layer is disposed on the light-blocking layer. The common electrode is disposed on the color filter layer. The common electrode has an opening disposed in the pixel area and extending along the longitudinal direction. The opening has left, right, upper and lower sides and a plurality of notch parts disposed at the upper and lower sides. An outermost notch part is spaced apart from the left side or the right side by 20 μm to 30 μm.
摘要翻译：在显示面板中，阵列基板包括设置在像素区域中的像素电极和连接到像素电极的开关元件。滤色器基板与阵列基板结合。滤色器基板包括遮光层，滤色器层和公共电极。滤色层设置在遮光层上。公共电极设置在滤色器层上。公共电极具有设置在像素区域中并沿着纵向方向延伸的开口。开口具有左右，上下两侧以及设置在上侧和下侧的多个切口部。最外侧的切口部分与左侧或右侧隔开20毫米至30毫米。

23. 发明授权

US07309922B2 Lower substrate, display apparatus having the same and method of manufacturing the same 有权
标题翻译：下基板，具有相同的显示装置及其制造方法
公开(公告)号：US07309922B2
公开(公告)日：2007-12-18
申请号：US10968825
申请日：2004-10-19
申请人： Hyun-Young Kim , Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae
发明人： Hyun-Young Kim , Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae
IPC分类号： H01L29/40
CPC分类号： G02F1/133555 , G02F1/133371 , G02F1/136227 , H01L27/12
摘要： In a lower substrate, a display apparatus having the lower substrate and a method of manufacturing the lower substrate, the lower substrate includes a pixel area and a circuit area. An image is displayed in the pixel area. A first signal electrode is disposed in a circuit area. A first insulating layer includes an opening, through which the first signal electrode is exposed. A second signal electrode is disposed on the first insulating layer in the circuit area, and spaced apart from the first signal electrode. A second insulating layer is disposed on the first insulating layer, and includes a contact hole, through which the first and second signal electrodes are exposed. A conductive layer electrically connects the first signal electrode to the second signal electrode. Therefore, a manufacturing process is simplified so that a yield of the lower substrate is increased.
摘要翻译：在下基板中，具有下基板的显示装置和下基板的制造方法，下基板包括像素区域和电路区域。图像显示在像素区域中。第一信号电极设置在电路区域中。第一绝缘层包括第一信号电极暴露的开口。第二信号电极设置在电路区域中的第一绝缘层上，并与第一信号电极间隔开。第二绝缘层设置在第一绝缘层上，并且包括接触孔，第一和第二信号电极通过该接触孔露出。导电层将第一信号电极与第二信号电极电连接。因此，简化了制造工艺，使得下基板的产量增加。

24. 发明授权

US07129105B2 Method for manufacturing thin film transistor array panel for display device 有权
标题翻译：用于制造显示装置的薄膜晶体管阵列面板的方法
公开(公告)号：US07129105B2
公开(公告)日：2006-10-31
申请号：US10509481
申请日：2002-09-18
申请人： Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae , Hyun-Young Kim
发明人： Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae , Hyun-Young Kim
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： G02F1/13458 , G02F1/133553 , G02F1/133555 , G02F1/136227 , G02F2001/136236
摘要： A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate. A gate insulating layer is formed thereafter, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. A conductive material is deposited and patterned to form a data wire inducing data lines intersecting the gate lines, source electrodes, drain electrodes, and data pads. A protective layer made of silicon nitride is deposited on the substrate, and an organic insulating layer made of a photosensitive organic insulating material is coated on the protective layer. The organic insulating layer is patterned to form an unevenness pattern on its surface and first contact holes exposing the protective layer opposite the drain electrodes. Subsequently, the surface of the organic insulating layer is treated using inactive gas such as Ar, and then the protective layer is patterned together with the gate insulating layer by photo etch using a photoresist pattern to form contact holes respectively exposing the drain electrodes, the gate pads, and the data pads. Next, indium-tin-oxide or indium-zinc-oxide is deposited and patterned to form transparent electrodes, subsidiary gate pads, and subsidiary data pads respectively connected to the drain electrodes, the gate pads and the data pads. Finally, a reflective conductive material is deposited and patterned to form reflecting films having respective apertures in the pixel area on the transparent electrodes.
摘要翻译：在基板上形成包括栅极线，栅极电极和栅极焊盘并沿横向延伸的栅极线。此后形成栅极绝缘层，并且在其上顺序地形成半导体层和欧姆接触层。导电材料被沉积并图案化以形成数据线，其引导与栅极线，源电极，漏电极和数据焊盘相交的数据线。在衬底上沉积由氮化硅制成的保护层，并且将由光敏有机绝缘材料制成的有机绝缘层涂覆在保护层上。有机绝缘层被图案化以在其表面上形成不平坦图案，并且暴露出与漏电极相对的保护层的第一接触孔。随后，使用诸如Ar的惰性气体处理有机绝缘层的表面，然后使用光致抗蚀剂图案通过光蚀刻将保护层与栅极绝缘层一起构图，以形成分别暴露漏电极，栅极垫和数据垫。接下来，沉积和图案化氧化铟锡或氧化铟锌，以形成分别连接到漏电极，栅极焊盘和数据焊盘的透明电极，辅助栅极焊盘和辅助数据焊盘。最后，沉积并图案化反射导电材料以形成在透明电极上的像素区域中具有相应孔的反射膜。

25. 发明申请

US20060099760A1 Storage capacitors for semiconductor devices and methods of forming the same 有权
标题翻译：用于半导体器件的存储电容器及其形成方法
公开(公告)号：US20060099760A1
公开(公告)日：2006-05-11
申请号：US11266520
申请日：2005-11-03
申请人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
发明人： Rak-Hwan Kim , Young-Joo Cho , Sung-Tae Kim , In-Sun Park , Hyeon-Deok Lee , Hyun-Suk Lee , Jung-Hee Chung , Hyun-Young Kim , Hyun-Seok Lim
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852 , H01L28/75
摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
摘要翻译：形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模压氧化层，选择性地去除模制件的部分在接触塞上方形成凹部，在凹部的底面和侧面形成钛层，在钛层上形成氮化钛层，在氮化钛层上形成氮化钛层。存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物层在氮化钛层上。

26. 发明申请

US20050170548A1 Method for manufacturing thin film transistor array panel for display device 有权
标题翻译：用于制造显示装置的薄膜晶体管阵列面板的方法
公开(公告)号：US20050170548A1
公开(公告)日：2005-08-04
申请号：US10509481
申请日：2002-09-18
申请人： Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae , Hyun-Young Kim
发明人： Joo-Sun Yoon , Bong-Ju Kim , Seung-Gyu Tae , Hyun-Young Kim
IPC分类号： G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/1345 , G02F1/1362 , G02F1/1368 , H01L21/84
CPC分类号： G02F1/13458 , G02F1/133553 , G02F1/133555 , G02F1/136227 , G02F2001/136236
摘要： A gate wire including gate lines, gate electrodes, and gate pads and extending in a transverse direction is formed on a substrate. A gate insulating layer is formed thereafter, and a semiconductor layer and an ohmic contact layer are sequentially formed thereon. A conductive material is deposited and patterned to form a data wire inducing data lines intersecting the gate lines, source electrodes, drain electrodes, and data pads. A protective layer made of silicon nitride is deposited on the substrate, and an organic insulating layer made of a photosensitive organic insulating material is coated on the protective layer. The organic insulating layer is patterned to form an unevenness pattern on its surface and first contact holes exposing the protective layer opposite the drain electrodes. Subsequently, the surface of the organic insulating layer is treated using inactive gas such as Ar, and then the protective layer is patterned together with the gate insulating layer by photo etch using a photoresist pattern to form contact holes respectively exposing the drain electrodes, the gate pads, and the data pads. Next, indium-tin-oxide or indium-zinc-oxide is deposited and patterned to form transparent electrodes, subsidiary gate pads, and subsidiary data pads respectively connected to the drain electrodes, the gate pads and the data pads. Finally, a reflective conductive material is deposited and patterned to form reflecting films having respective apertures in the pixel area on the transparent electrodes.
摘要翻译：在基板上形成包括栅极线，栅极电极和栅极焊盘并沿横向延伸的栅极线。此后形成栅极绝缘层，并且在其上顺序地形成半导体层和欧姆接触层。导电材料被沉积并图案化以形成数据线，其引导与栅极线，源电极，漏电极和数据焊盘相交的数据线。在衬底上沉积由氮化硅制成的保护层，并且将由光敏有机绝缘材料制成的有机绝缘层涂覆在保护层上。有机绝缘层被图案化以在其表面上形成凹凸图案，并且暴露出与漏电极相对的保护层的第一接触孔。随后，使用诸如Ar的惰性气体处理有机绝缘层的表面，然后使用光致抗蚀剂图案通过光蚀刻将保护层与栅极绝缘层一起构图，以形成分别暴露漏电极，栅极垫和数据垫。接下来，沉积和图案化氧化铟锡或氧化铟锌，以形成分别连接到漏电极，栅极焊盘和数据焊盘的透明电极，辅助栅极焊盘和辅助数据焊盘。最后，沉积并图案化反射导电材料以形成在透明电极上的像素区域中具有相应孔的反射膜。

27. 发明授权

US06328043B1 Filtering technique for CVD chamber process gases 失效
标题翻译： CVD室工艺气体的过滤技术
公开(公告)号：US06328043B1
公开(公告)日：2001-12-11
申请号：US09315340
申请日：1999-05-20
申请人： Young-Roe Kim , Hyun-Young Kim , Hyun-kuk Ko , Kyung-Burn Koo , Ju-Wan Kim , Hyong-Soo Kim , Dong-chan Park , Dong-Geun Na
发明人： Young-Roe Kim , Hyun-Young Kim , Hyun-kuk Ko , Kyung-Burn Koo , Ju-Wan Kim , Hyong-Soo Kim , Dong-chan Park , Dong-Geun Na
IPC分类号： B08B500
CPC分类号： C23C16/4408 , C23C16/42 , C23C16/4405 , Y10S438/905
摘要： A method and an apparatus for removing particulate contaminant are provided in order to ensure high purity during a tungsten suicide deposition process. The method for removing particulate contaminant in tungsten silicide deposition process using SiH4 as silicon source gas and NF3 as cleaning gas, includes purging a carrier gas line for an SiH4 silicon source gas to remove the contaminant in the chamber and carrier gas line when the carrier gas is supplied with the chamber, and the NF3 cleaning gas is supplied to the chamber to form plasma. After a plasma cleaning, the gas line flowing reaction gas responding to the SiH4 is purged to remove the contaminant in the chamber and the reaction gas line. As a result, any particulate contaminant is removed or remains at a minimum level that has no effect on the tungsten silicide deposition process.
摘要翻译：提供了一种用于除去微粒污染物的方法和装置，以确保在硅化钨沉积工艺期间的高纯度。使用SiH4作为硅源气体和NF 3作为清洁气体的去除硅化钨沉积工艺中的微粒污染物的方法包括：在载气中除去用于SiH 4硅源气体的载气管线以除去腔室和载气管线中的污染物供给室，并且将NF 3清洁气体供应到室以形成等离子体。在等离子体清洗之后，吹扫响应于SiH 4的气体管线流动的反应气体以除去腔室和反应气体管线中的污染物。结果，任何颗粒污染物被去除或保持在对硅化钨沉积过程没有影响的最低水平。

28. 发明授权

US08372273B2 Water purifying filter assembly module 有权
标题翻译：净水过滤器总成模块
公开(公告)号：US08372273B2
公开(公告)日：2013-02-12
申请号：US12826846
申请日：2010-06-30
申请人： Woo Il Joo , In Du Choi , Jung Hwan Lee , Hyun Young Kim
发明人： Woo Il Joo , In Du Choi , Jung Hwan Lee , Hyun Young Kim
IPC分类号： B01D27/10
CPC分类号： B01D29/96 , B01D35/143 , B01D35/153 , B01D35/303 , B01D2201/302 , B01D2201/4023 , B01D2201/54 , C02F1/001 , C02F2209/445 , G01F1/06 , G01F1/07
摘要： There is provided a water purifying filter assembly module that a water purifying filter can be easily released from or assembled with. The water purifying filter assembly module may include: a filter assembly head having a water purifying filter assembled on one side thereof, the filter assembly head configured such that water to be filtered flows into the water purifying filter and the water, filtered through the water purifying filter, is discharged to an outside thereof; and a module body having the filter assembly head rotatably provided therein, the water purifying filter being released from or assembled on the filter assembly head as the water purifying filter is aligned and rotates with the filter assembly head.
摘要翻译：提供了一种净水过滤器组件模块，其可以容易地从其组装脱水净化过滤器。净水过滤器组件模块可以包括：过滤器组件头，其具有在其一侧上组装的净水过滤器，过滤器组件头构造成使得被过滤的水流入净水过滤器和水，通过净化过滤过滤器被排出到其外部; 以及具有可旋转地设置在其中的过滤器组件头的模块体，当净水过滤器对准并与过滤器组件头一起旋转时，净水过滤器从过滤器组件头部释放或组装在过滤器组件头上。

29. 发明申请

US20130000334A1 COLD WATER TANK 有权
标题翻译：冷水箱
公开(公告)号：US20130000334A1
公开(公告)日：2013-01-03
申请号：US13634132
申请日：2011-03-21
申请人： Hyun-Young Kim , Woong Jung , Hyun-Hee Lee , Hwan-Seok Choi
发明人： Hyun-Young Kim , Woong Jung , Hyun-Hee Lee , Hwan-Seok Choi
IPC分类号： F25D17/00 , F25B49/00
CPC分类号： F25D31/003
摘要： There is provided a cold water tank including: a first tank having an inlet pipe through which water to be cooled is introduced; and a second tank provided in the interior of the first tank such that water of the first tank can be introduced thereinto, having an evaporator included in a refrigerating cycle to cool the introduced water, and having an outlet pipe through which cooled water flows. Although water is introduced at high pressure, the introduced water can remain in the cold water tank for a period of time required for being cooled, and although water is introduced at high pressure, the introduced water can be in a stable state in the cold water tank. Thus, water can be cooled with its inflow pressure maintained, and the degree of freedom of a faucet or cock for allowing cold water to flow therethrough can be improved in its height.
摘要翻译：提供了一种冷水箱，包括：具有入口管的第一罐，通过该入口管引入待冷却的水; 以及第二罐，设置在第一罐的内部，使得第一罐的水可以被引入其中，具有包括在制冷循环中的蒸发器以冷却引入的水，并且具有冷却水流过的出口管。虽然在高压下引入水，但是引入的水可以在冷水箱中保持冷却所需的时间段，并且尽管在高压下引入水，但是引入的水可以在冷水中处于稳定状态坦克。因此，水可以保持其流入压力而被冷却，并且可以提高使冷水流过其中的水龙头或旋塞的自由度的高度。

30. 发明申请

US20090186005A1 Methods and Compositions For Treating Motor Neuron Diseases Comprising Mesenchymal Stem Cells 有权
标题翻译：用于治疗包含间充质干细胞的运动神经元疾病的方法和组合物
公开(公告)号：US20090186005A1
公开(公告)日：2009-07-23
申请号：US12302161
申请日：2006-11-28
申请人： Hee Tae Kim , Kyung Suk Kim , Seung Hyun Kim , Young Gyu Chai , Seong Ho Koh , Hyun Young Kim , Mi Ran Choi , Ji-Yoon Park , Kyoung Hwa Jung
发明人： Hee Tae Kim , Kyung Suk Kim , Seung Hyun Kim , Young Gyu Chai , Seong Ho Koh , Hyun Young Kim , Mi Ran Choi , Ji-Yoon Park , Kyoung Hwa Jung
IPC分类号： A61K35/12 , A61P25/14
CPC分类号： A61K35/28 , A61K38/16 , A61K38/24
摘要： Disclosed herein are a composition for treating motor neuron diseases, particularly amyotrophic lateral sclerosis (ALS), using mesenchymal stem cells, and a method for treating motor neuron diseases using the composition. The composition and treatment method can provide effective therapy for motor neuron diseases, particularly for amyotrophic lateral sclerosis (ALS).
摘要翻译：本文公开了一种使用间充质干细胞治疗运动神经元疾病，特别是肌萎缩性侧索硬化（ALS）的组合物，以及使用该组合物治疗运动神经元疾病的方法。组合物和治疗方法可以为运动神经元疾病，特别是肌萎缩性侧索硬化（ALS）提供有效的治疗。

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