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21. 发明授权

US06426264B1 Method of manufacturing a semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device 失效
标题翻译：制造半导体层叠基板，半导体晶体基板和半导体器件的方法
公开(公告)号：US06426264B1
公开(公告)日：2002-07-30
申请号：US09482905
申请日：2000-01-14
申请人： Hiroji Kawai
发明人： Hiroji Kawai
IPC分类号： H01L21331
CPC分类号： H01L21/0237 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02642 , H01L21/0265 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/20 , H01S5/0207 , H01S5/0213 , H01S5/32341
摘要： A semiconductor crystal layer composed of GaN is grown on a base substrate composed of sapphire sandwiching a separating layer composed of AlN and a buffer layer composed of GaN. The separating layers and the buffer layers are distributed in the form of lines, and a flow-through hole for an etchant is formed in the side of these layers sandwiching an anti-growing film composed of SiO2. Thus, the etchant flows through the flow-through hole, the anti-growing film and the separating layer are etched, and the base substrate is easily isolated.
摘要翻译：在由AlN构成的分离层和由GaN构成的缓冲层的蓝宝石构成的基板上生长由GaN构成的半导体晶体层。分离层和缓冲层以管线的形式分布，并且在夹在由SiO 2组成的抗生长膜的这些层的侧面上形成用于蚀刻剂的流通孔。因此，蚀刻剂流过流通孔，抗生长膜和分离层被蚀刻，并且基底衬底容易隔离。

22. 发明授权

US06281032B1 Manufacturing method for nitride III-V compound semiconductor device using bonding 有权
标题翻译：使用接合的氮化物III-V化合物半导体器件的制造方法
公开(公告)号：US06281032B1
公开(公告)日：2001-08-28
申请号：US09291016
申请日：1999-04-14
申请人： Osamu Matsuda , Toshimasa Kobayashi , Norikazu Nakayama , Hiroji Kawai
发明人： Osamu Matsuda , Toshimasa Kobayashi , Norikazu Nakayama , Hiroji Kawai
IPC分类号： H01L2100
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/187 , H01L21/2007 , H01L21/8252 , H01L33/0079 , H01L2221/68363 , H01L2224/48091 , H01L2224/48465 , H01S5/0202 , H01S5/021 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02212 , H01S5/0264 , H01L2924/00014 , H01L2924/00
摘要： In a semiconductor device manufacturing method capable of manufacturing semiconductor lasers, light emitting diodes or electron transport devices using nitride III-V compound semiconductors with a high productivity, a GaN semiconductor laser wafer is prepared in which a plurality of semiconductor lasers are formed on an AlGaInN semiconductor layer on a c-face sapphire substrate and separated from each other by grooves deep enough to reach the c-face sapphire substrate, and a p-side electrode and an n-side electrode are formed in each semiconductor laser. The GaN semiconductor laser wafer is bonded to a photo-diode built-in Si wafer having formed a photo diode for monitoring light outputs and solder electrodes in each pellet by positioning the p-side electrode and the n-side electrode in alignment with the solder electrodes, respectively. After that, by lapping the c-face sapphire substrate from its bottom surface deep enough to reach the grooves or by dicing the c-face sapphire substrate from its bottom surface, the semiconductor lasers on the photo-diode built-in Si wafer are separated from each other. After that, the photo-diode built-in Si wafer is divided by dicing into discrete pellets. A GaN semiconductor laser chip, thus obtained, is assembled on a package.
摘要翻译：在能够以高生产率制造半导体激光器，发光二极管或使用氮化物III-V化合物半导体的电子传输装置的半导体器件制造方法中，制备GaN半导体激光晶片，其中在AlGaInN上形成多个半导体激光器半导体层，并且通过深度足以到达c面蓝宝石衬底的沟槽彼此分离，并且在每个半导体激光器中形成p侧电极和n侧电极。将GaN半导体激光晶片通过将p侧电极和n侧电极定位在与焊料对准的状态下，与形成有二极管的光电二极管内置Si晶片接合，该光电二极管用于监测各个芯片中的光输出和焊料电极电极。之后，通过将C面蓝宝石衬底从其底部表面深度研磨到达凹槽或通过从其底部表面切割c面蓝宝石衬底，将二极管内置硅晶片上的半导体激光器分离从彼此。之后，光电二极管内置硅晶片通过切割分割成分散的颗粒。由此获得的GaN半导体激光芯片组装在封装上。

23. 发明授权

US06239033B1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US06239033B1
公开(公告)日：2001-05-29
申请号：US09316044
申请日：1999-05-21
申请人： Hiroji Kawai
发明人： Hiroji Kawai
IPC分类号： H01L21304
CPC分类号： H01L29/66522 , B82Y20/00 , H01L21/0332 , H01L21/304 , H01L21/30612 , H01L21/76898 , H01L29/812 , H01L33/0079 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/0425 , H01S5/34333 , H01S2301/173 , H01S2304/04 , Y10S438/94
摘要： After making a GaN FET by growing GaN semiconductor layers on the surface of a sapphire substrate, the bottom surface of the sapphire substrate is processed by lapping, using an abrasive liquid containing a diamond granular abrasive material and reducing the grain size of the abrasive material in some steps, to reduce the thickness of the sapphire substrate to 100 &mgr;m or less. Thereafter, the bottom surface of the sapphire substrate is processed by etching using an etchant of phosphoric acid or phosphoric acid/sulfuric acid mixed liquid to remove a strained layer by lapping. Then, after making a via hole by etching the bottom surface of the sapphire substrate by using a similar etchant, the GaN semiconductor layer at the bottom of the via hole is removed by RIE to expose a Au pad electrically connected to the source of GaN FET. Thereafter, a thick Au film electrically connected to the Au pad is made through the via hole. The via hole may be made by irradiation of a pulse laser beam from a CO2 laser and subsequent etching.
摘要翻译：在通过在蓝宝石衬底的表面上生长GaN半导体层制造GaN FET之后，通过使用含有金刚石颗粒磨料的研磨液研磨蓝宝石衬底的底表面，并将研磨材料的晶粒尺寸减小一些步骤，将蓝宝石基板的厚度减小到100um以下。此后，通过使用磷酸或磷酸/硫酸混合液的蚀刻剂进行蚀刻来处理蓝宝石衬底的底表面，以通过研磨去除应变层。然后，通过使用类似的蚀刻剂蚀刻蓝宝石衬底的底表面来制造通孔之后，通过RIE去除通孔底部的GaN半导体层，以暴露电连接到GaN FET源极的Au焊盘。此后，通过通孔形成与Au焊盘电连接的厚Au膜。通孔可以通过来自CO 2激光器的脉冲激光束的照射和随后的蚀刻来制成。

24. 发明授权

US6140169A Method for manufacturing field effect transistor 有权
标题翻译：场效应晶体管的制造方法
公开(公告)号：US6140169A
公开(公告)日：2000-10-31
申请号：US283696
申请日：1999-04-01
申请人： Hiroji Kawai , Shunji Imanaga
发明人： Hiroji Kawai , Shunji Imanaga
IPC分类号： H01L21/28 , H01L21/285 , H01L21/335 , H01L21/336 , H01L29/20 , H01L29/51 , H01L29/778 , H01L29/78
CPC分类号： H01L29/518 , H01L21/28194 , H01L21/28587 , H01L29/66462 , H01L29/66522 , H01L29/7786 , H01L29/78 , H01L29/2003
摘要： A GaN-type field effect transistor exhibits a large input amplitude by using a gate insulating film. A channel layer and a gate insulating film are sequentially laminated on a substrate with a buffer layer therebetween. A gate electrode is formed on the gate insulating film. A source electrode and a drain electrode are disposed at the both sides of the gate electrode and are electrically connected to the channel layer via openings. The channel layer is formed from n-type GaN. The gate insulating film is made from AlN, which exhibits excellent insulation characteristics, thus increasing the Schottky barrier and achieving a large input amplitude. If the FET is operated in the enhancement mode, it is operable in a manner similar to a Si-MOS-type FET, resulting in the formation of an inversion layer.
摘要翻译：通过使用栅极绝缘膜，GaN型场效应晶体管呈现大的输入振幅。沟道层和栅极绝缘膜依次层压在其间具有缓冲层的基板上。在栅极绝缘膜上形成栅电极。源电极和漏极设置在栅电极的两侧，并且经由开口电连接到沟道层。沟道层由n型GaN形成。栅绝缘膜由AlN制成，其表现出优异的绝缘特性，从而增加肖特基势垒并实现大的输入幅度。如果FET在增强模式下工作，则其可以以类似于Si-MOS型FET的方式工作，导致反型层的形成。

25. 发明授权

US5863811A Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layers 失效
标题翻译：在非单晶III-V化合物半导体缓冲层上生长单晶III-V化合物半导体层的方法
公开(公告)号：US5863811A
公开(公告)日：1999-01-26
申请号：US672042
申请日：1996-06-26
申请人： Hiroji Kawai , Tsunenori Asatsuma , Kenji Funato
发明人： Hiroji Kawai , Tsunenori Asatsuma , Kenji Funato
IPC分类号： H01L21/20 , H01L21/205 , H01L33/12 , H01L33/32 , H01S5/00 , H01S5/323
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02513 , H01L21/0254 , Y10S148/025 , Y10S148/113
摘要： A method for growing a single crystal III-V compound semiconductor layer, in which grown by vapor deposition on a first single crystal III-V compound semiconductor layer including at least Ga and N is a second single crystal III-V compound semiconductor layer different from the first layer and including at least Ga and N, comprises the steps of: growing a buffer layer other than single crystal and having substantially the same composition as that of the second layer by vapor deposition on the first layer; and growing the second layer on the buffer layer. A method for growing a single crystal AlGaN layer on a single crystal GaN layer by vapor deposition, comprises the steps of: growing a buffer layer of a III-V compound semiconductor including at least Ga and N on the single crystal GaN layer by vapor deposition; and growing the single crystal AlGaN layer on the buffer layer by vapor deposition. A method for growing single crystal III-V compound semiconductor layers, in which a first single crystal III-V compound semiconductor layer including at least Ga and N and a second single crystal III-V compound semiconductor layer different from the first layer and including at least Ga and N are grown on a substrate by vapor deposition, comprises the step of: growing a buffer layer of a III-V compound semiconductor including at least Ga and N between the first layer and the second layer.
摘要翻译：通过气相沉积在至少包括Ga和N的第一单晶III-V化合物半导体层上生长的单晶III-V化合物半导体层的方法是不同于第二单晶III-V化合物半导体层的第二单晶III-V化合物半导体层第一层并且包括至少Ga和N，包括以下步骤：通过气相沉积在第一层上生长除单晶以外具有与第二层基本相同的组成的缓冲层; 并在缓冲层上生长第二层。通过气相沉积在单晶GaN层上生长单晶AlGaN层的方法包括以下步骤：通过气相沉积在单晶GaN层上生长至少含有Ga和N的III-V族化合物半导体的缓冲层 ; 并通过气相沉积在缓冲层上生长单晶AlGaN层。一种用于生长单晶III-V族化合物半导体层的方法，其中包含至少包含Ga和N的第一单晶III-V化合物半导体层和与第一层不同的第二单晶III-V化合物半导体层，最少的Ga和N通过气相沉积在衬底上生长，包括以下步骤：在第一层和第二层之间生长包括至少Ga和N的III-V族化合物半导体的缓冲层。

26. 发明授权

US08785976B2 Polarization super-junction low-loss gallium nitride semiconductor device 有权
标题翻译：极化超结低损耗氮化镓半导体器件
公开(公告)号：US08785976B2
公开(公告)日：2014-07-22
申请号：US13639075
申请日：2011-06-21
申请人： Akira Nakajima , Sankara Narayanan Ekkanath Madathil , Yasunobu Sumida , Hiroji Kawai
发明人： Akira Nakajima , Sankara Narayanan Ekkanath Madathil , Yasunobu Sumida , Hiroji Kawai
IPC分类号： H01L29/78 , H01L29/423 , H01L29/06 , H01L29/861 , H01L29/10 , H01L29/40 , H01L29/778 , H01L29/66 , H01L29/20 , H01L29/872
CPC分类号： H01L29/78 , H01L29/0619 , H01L29/1075 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66219 , H01L29/66462 , H01L29/7786 , H01L29/861 , H01L29/872
摘要： A low-loss GaN-based semiconductor device is provided.The semiconductor device has the InzGa1-zN layer (where 0≦z
摘要翻译：提供了一种低损耗GaN基半导体器件。半导体器件具有InzGa1-zN层（其中0和nlE; z <1），Al x Ga 1-x N层（其中0

27. 发明授权

US06903392B2 Semiconductor device and its manufacturing method 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US06903392B2
公开(公告)日：2005-06-07
申请号：US09768912
申请日：2001-01-24
申请人： Hiroji Kawai
发明人： Hiroji Kawai
IPC分类号： H01L21/033 , H01L21/304 , H01L21/306 , H01L21/336 , H01L21/768 , H01L29/812 , H01L33/00 , H01S5/02 , H01S5/323 , H01L29/80
CPC分类号： H01L29/66522 , B82Y20/00 , H01L21/0332 , H01L21/304 , H01L21/30612 , H01L21/76898 , H01L29/812 , H01L33/0079 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/0425 , H01S5/34333 , H01S2301/173 , H01S2304/04 , Y10S438/94
摘要： A semiconductor device having a single-crystal substrate made of a material different from nitride III-V compound semiconductors, and a device made on one major surface of said single-crystal substrate by using III-V compound semiconductors, including electrical connection to said device being made through a via hole formed in said single-crystal substrate and method of making the same.
摘要翻译：具有由与氮化物III-V化合物半导体不同的材料制成的单晶衬底的半导体器件以及通过使用III-V族化合物半导体在所述单晶衬底的一个主表面上制造的器件，包括与所述器件的电连接通过形成在所述单晶衬底中的通孔制成，以及制造该单晶衬底的方法。

28. 发明授权

US06750481B2 Semiconductor laminated substrate, semiconductor crystal substrate and semiconductor device and method of manufacturing the same 失效
标题翻译：半导体层叠基板，半导体晶体基板及半导体装置及其制造方法
公开(公告)号：US06750481B2
公开(公告)日：2004-06-15
申请号：US10098322
申请日：2002-03-15
申请人： Hiroji Kawai
发明人： Hiroji Kawai
IPC分类号： H01L310328
CPC分类号： H01L21/0237 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02642 , H01L21/0265 , H01L29/2003 , H01L29/205 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/20 , H01S5/0207 , H01S5/0213 , H01S5/32341
摘要： A semiconductor crystal layer composed of GaN is grown on a base substrate composed of sapphire sandwiching a separating layer composed of AlN and a buffer layer composed of GaN. The separating layers and the buffer layers are distributed in the form of lines, and a flow-through hole for an etchant is formed in the side of these layers sandwiching an anti-growing film composed of SiO2. Thus, the etchant flows through the flow-through hole, the anti-growing film and the separating layer are etched, and the base substrate is easily isolated.
摘要翻译：在由AlN构成的分离层和由GaN构成的缓冲层的蓝宝石构成的基板上生长由GaN构成的半导体晶体层。分离层和缓冲层以管线的形式分布，并且在夹在由SiO 2组成的抗生长膜的这些层的侧面上形成用于蚀刻剂的流通孔。因此，蚀刻剂流过流通孔，抗生长膜和分离层被蚀刻，并且基底衬底容易隔离。

29. 发明授权

US06501154B2 Semiconductor substrate made of a nitride III-V compound semiconductor having a wurtzite-structured crystal structure 失效
标题翻译：半导体衬底由具有纤锌矿结构的晶体结构的氮化物III-V化合物半导体制成
公开(公告)号：US06501154B2
公开(公告)日：2002-12-31
申请号：US09088743
申请日：1998-06-02
申请人： Etsuo Morita , Masao Ikeda , Hiroji Kawai
发明人： Etsuo Morita , Masao Ikeda , Hiroji Kawai
IPC分类号： H01L2904
CPC分类号： H01S5/3202 , H01L33/16 , H01L33/32 , H01S5/0202 , H01S5/32341 , H01S2304/04
摘要： There are provided a semiconductor substrate and a semiconductor laser using the semiconductor substrate which promises smooth and optically excellent cleaved surfaces and is suitable for fabricating semiconductor lasers using nitride III-V compound semiconductors. Using a semiconductor substrate, such as GaN substrate, having a major surface substantially normal to a {0001}-oriented face, e.g. {01-10}-oriented face or {11-20}-oriented face, or offset within ±5° from these faces, nitride III-V compound semiconductor layers are epitaxially grown on the substrate to form a laser structure. To make cavity edges, the GaN substrate is cleaved together with the overlying III-V compound semiconductor layers along high-cleavable {0001}-oriented faces.
摘要翻译：提供了使用半导体衬底的半导体衬底和半导体激光器，该半导体衬底具有光滑和光学优异的切割表面，并且适用于使用氮化物III-V化合物半导体制造半导体激光器。使用诸如GaN衬底的半导体衬底，其具有基本上垂直于{0001}取向面的主表面，例如， {01-10}取向的面或{11-20}取向的面，或偏离这些面的±5°以内，氮化物III-V化合物半导体层在衬底上外延生长以形成激光结构。为了形成腔边缘，GaN衬底与沿着高可裂解{0001}取向面的上覆III-V化合物半导体层一起被切割。

30. 发明授权

US06468902B2 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US06468902B2
公开(公告)日：2002-10-22
申请号：US09768480
申请日：2001-01-24
申请人： Hiroji Kawai
发明人： Hiroji Kawai
IPC分类号： H01L21302
CPC分类号： H01L29/66522 , B82Y20/00 , H01L21/0332 , H01L21/304 , H01L21/30612 , H01L21/76898 , H01L29/812 , H01L33/0079 , H01S5/0207 , H01S5/0213 , H01S5/0217 , H01S5/0425 , H01S5/34333 , H01S2301/173 , H01S2304/04 , Y10S438/94
摘要： After making a GaN FET by growing GaN semiconductor layers on the surface of a sapphire substrate, the bottom surface of the sapphire substrate is processed by lapping, using an abrasive liquid containing a diamond granular abrasive material and reducing the grain size of the abrasive material in some steps, to reduce the thickness of the sapphire substrate to 100 &mgr;m or less. Thereafter, the bottom surface of the sapphire substrate is processed by etching using an etchant of phosphoric acid or phosphoric acid/sulfuric acid mixed liquid to remove a strained layer by lapping followed by making a via hole by etching the bottom surface of the sapphire substrate by using a similar etchant.
摘要翻译：在通过在蓝宝石衬底的表面上生长GaN半导体层制造GaN FET之后，通过使用含有金刚石颗粒磨料的研磨液研磨蓝宝石衬底的底表面，并将研磨材料的晶粒尺寸减小一些步骤，将蓝宝石基板的厚度减小到100um以下。此后，通过使用磷酸或磷酸/硫酸混合液的蚀刻剂进行蚀刻来处理蓝宝石基板的底面，通过研磨来除去应变层，然后通过用蓝宝石基板的底面蚀刻来形成通孔，使用类似的蚀刻剂。

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