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21. 发明申请

US20100053041A1 PIXEL CIRCUIT, LIGHT EMITTING DISPLAY DEVICE AND DRIVING METHOD THEREOF 有权
标题翻译：像素电路，发光显示装置及其驱动方法
公开(公告)号：US20100053041A1
公开(公告)日：2010-03-04
申请号：US12548796
申请日：2009-08-27
申请人： Katsumi Abe , Kenji Takahashi , Ryo Hayashi , Hideya Kumomi
发明人： Katsumi Abe , Kenji Takahashi , Ryo Hayashi , Hideya Kumomi
IPC分类号： G09G3/30 , H04N5/222
CPC分类号： G09G3/325 , G09G2300/0426 , G09G2300/0439 , G09G2300/0814 , G09G2300/0852 , G09G2310/0251 , G09G2310/0262 , G09G2320/0223
摘要： A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ.
摘要翻译：至少包括发光元件的像素电路和薄膜晶体管，其向发光元件提供根据发光元件的亮度 - 电流特性来控制灰度的第一电流，其中所述薄膜晶体管具有背面至少一个驱动周期，其中薄膜晶体管将第一电流提供给发光元件;以及写入周期，其中第二电流在驱动周期之前被写入薄膜晶体管，以便通过第一包括在驱动周期期间到薄膜晶体管的电流，并且通过改变在驱动周期和写入周期中施加到背栅电极的电压，使薄膜晶体管的栅极电压的电流能力不同。

22. 发明申请

US20090021536A1 DRIVING CIRCUIT OF DISPLAY ELEMENT AND IMAGE DISPLAY APPARATUS 有权
标题翻译：显示元件和图像显示设备的驱动电路
公开(公告)号：US20090021536A1
公开(公告)日：2009-01-22
申请号：US12162929
申请日：2006-03-10
申请人： Katsumi Abe , Masafumi Sano , Ryo Hayashi , Hideya Kumomi
发明人： Katsumi Abe , Masafumi Sano , Ryo Hayashi , Hideya Kumomi
IPC分类号： G09G5/10 , G09G3/30
CPC分类号： G09G3/3283 , G09G3/2014 , G09G3/325 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0251 , G09G2310/066 , G09G2320/0238 , G09G2320/043
摘要： A new driving circuit is provided. The driving circuit according to the present invention comprises a first period for setting a current to be supplied to a display element, a second period for setting a gray-scale of the display element, and a third period for supplying a driving current to the display element. The present invention, in the driving circuit of the display element, is provided with a current source circuit for supplying a constant current to the display element and a control circuit for controlling the time to supply a constant current to the display element from the current source circuit.
摘要翻译：提供了新的驱动电路。根据本发明的驱动电路包括用于设置要提供给显示元件的电流的第一周期，用于设置显示元件的灰度级的第二周期和用于向显示器提供驱动电流的第三周期元件。本发明在显示元件的驱动电路中设置有用于向显示元件供给恒定电流的电流源电路和控制电路，用于控制从电流源向显示元件提供恒定电流的时间电路。

23. 发明授权

US07473621B2 Producing method for crystalline thin film 失效
标题翻译：晶体薄膜的生产方法
公开(公告)号：US07473621B2
公开(公告)日：2009-01-06
申请号：US10533091
申请日：2003-11-26
申请人： Hideya Kumomi , Takeo Yamazaki , Masatoshi Watanabe
发明人： Hideya Kumomi , Takeo Yamazaki , Masatoshi Watanabe
IPC分类号： H01L21/20
CPC分类号： H01L21/02422 , C30B13/24 , C30B29/06 , H01L21/02532 , H01L21/02686 , H01L21/02689 , H01L27/1281
摘要： A method for producing a crystalline film by melting and resolidifying a film, characterized in preparing a film having a specific region and obtained either by (A) a step of forming a film in which a “specific region” and an “region continuous to a periphery of the specific region and different in thickness from the specific region” co-exist, or by (B) a step of irradiating a film with an elecrtromagnetic wave or particles having a mass in mutually different conditions between a specific region and a peripheral region thereof, and melting and resolidifying at least a part of the film. As the spatial position of the specific region can be exactly and easily controlled, it is possible to obtain a crystalline film in which a crystal grain is formed in a desired position.
摘要翻译：通过熔化和重新固化膜来制造结晶膜的方法，其特征在于制备具有特定区域的膜，其通过（A）形成膜的步骤获得，其中“特定区域”和“与或者通过（B）在特定区域与周边区域之间的相互不同的条件下用电磁波或具有质量的粒子照射膜的步骤并且熔融并重新固化至少一部分膜。由于能够精确且容易地控制特定区域的空间位置，因此可以获得其中晶粒形成在期望位置的结晶膜。

24. 发明申请

US20060177361A1 Crystallized film and process for production thereof 审中-公开
标题翻译：结晶膜及其制造方法
公开(公告)号：US20060177361A1
公开(公告)日：2006-08-10
申请号：US10559998
申请日：2004-06-09
申请人： Hideya Kumomi
发明人： Hideya Kumomi
IPC分类号： B01D9/00
CPC分类号： H01L21/02686 , C30B13/22 , C30B13/24 , C30B29/06 , H01L21/2026 , H01L27/1285 , H01L27/1296
摘要： A process for producing a crystallized film is provided which comprises a step of preparing a film having a crystal grain at a prescribed location, a step of melting a part of a region surrounding the crystal grain of the film and a part of a boundary between the crystal grain and the surrounding film locally by pulse heating, and a step of re-solidifying the melted region.
摘要翻译：提供一种生产结晶膜的方法，其包括在预定位置制备具有晶粒的膜的步骤，熔化膜的晶粒周围的区域的一部分和晶粒和周边膜通过脉冲加热局部进行，并且使熔融区域再凝固的步骤。

25. 发明授权

US5994698A Microprobe, preparation thereof and electronic device by use of said microprobe 失效
标题翻译：微探针，其制备和使用所述微探针的电子装置
公开(公告)号：US5994698A
公开(公告)日：1999-11-30
申请号：US240216
申请日：1994-05-09
申请人： Hisaaki Kawade , Haruki Kawada , Kunihiro Sakai , Hiroshi Matsuda , Yuko Morikawa , Yoshihiro Yanagisawa , Tetsuya Kaneko , Toshimitsu Kawase , Hideya Kumomi , Hiroyasu Nose , Eigo Kawakami
发明人： Hisaaki Kawade , Haruki Kawada , Kunihiro Sakai , Hiroshi Matsuda , Yuko Morikawa , Yoshihiro Yanagisawa , Tetsuya Kaneko , Toshimitsu Kawase , Hideya Kumomi , Hiroyasu Nose , Eigo Kawakami
IPC分类号： G01Q70/14 , G01Q60/16 , G01Q70/10 , G01Q80/00 , H01J37/28
CPC分类号： G01Q60/16 , B82Y35/00 , G01Q70/10 , B82Y10/00 , G01Q80/00 , Y10S977/874
摘要： A microprobe is provided which comprises a single crystal provided on a part of one main surface of a substrate or a part of a thin film formed on one main surface of the substrate. The microprobe may have a single crystal having an apex portion surrounded by facets having a specific plane direction and comprising a specific crystal face. The method for preparing the microprobe and an electronic device employing the microprobe also provided which is useful for recording and reproducing.
摘要翻译：提供了一种微探针，其包括设置在基板的一个主表面的一部分上的单晶或形成在基板的一个主表面上的薄膜的一部分。微探针可以具有单晶，其具有由具有特定平面方向的面所包围的顶点部分，并且包括特定的晶面。还提供了用于制备微探针的方法和采用该微探针的电子装置，其用于记录和再现。

26. 发明授权

US5130103A Method for forming semiconductor crystal and semiconductor crystal article obtained by said method 失效
标题翻译：形成半导体晶体和半导体晶体物理方法
公开(公告)号：US5130103A
公开(公告)日：1992-07-14
申请号：US752922
申请日：1991-08-30
申请人： Kenji Yamagata , Hideya Kumomi , Hiroyuki Tokunaga , Kozo Arao
发明人： Kenji Yamagata , Hideya Kumomi , Hiroyuki Tokunaga , Kozo Arao
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20 , H01L27/142 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/1804 , C30B25/02 , C30B25/18 , H01L21/02422 , H01L21/0245 , H01L21/02463 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L31/03529 , H01L31/0475 , Y02E10/547 , Y02P70/521 , Y10S428/901 , Y10T428/24917 , Y10T428/31504 , Y10T428/31678
摘要： Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) with metal having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of the deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a semiconductor single crystal from the single nucleus.

27. 发明授权

US08659519B2 Pixel circuit with a writing period and a driving period, and driving method thereof 有权
标题翻译：具有写入周期和驱动周期的像素电路及其驱动方法
公开(公告)号：US08659519B2
公开(公告)日：2014-02-25
申请号：US12548796
申请日：2009-08-27
申请人： Katsumi Abe , Kenji Takahashi , Ryo Hayashi , Hideya Kumomi
发明人： Katsumi Abe , Kenji Takahashi , Ryo Hayashi , Hideya Kumomi
IPC分类号： G09G3/30
CPC分类号： G09G3/325 , G09G2300/0426 , G09G2300/0439 , G09G2300/0814 , G09G2300/0852 , G09G2310/0251 , G09G2310/0262 , G09G2320/0223
摘要： A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ.
摘要翻译：至少包括发光元件的像素电路和薄膜晶体管，其向发光元件提供根据发光元件的亮度 - 电流特性控制灰度的第一电流，其中所述薄膜晶体管具有背面至少一个驱动周期，其中薄膜晶体管将第一电流提供给发光元件;以及写入周期，其中第二电流在驱动周期之前被写入薄膜晶体管，以便通过第一包括在驱动周期期间到薄膜晶体管的电流，并且通过改变在驱动周期和写入周期中施加到背栅电极的电压，使薄膜晶体管的栅极电压的电流能力不同。

28. 发明授权

US08426243B2 Amorphous oxide semiconductor and thin film transistor using the same 失效
标题翻译：非晶氧化物半导体和使用其的薄膜晶体管
公开(公告)号：US08426243B2
公开(公告)日：2013-04-23
申请号：US13353077
申请日：2012-01-18
申请人： Ryo Hayashi , Hideyuki Omura , Hideya Kumomi , Yuzo Shigesato
发明人： Ryo Hayashi , Hideyuki Omura , Hideya Kumomi , Yuzo Shigesato
IPC分类号： H01J21/00 , H01L21/16
CPC分类号： H01L29/78663 , H01L29/7869
摘要： There is provided an amorphous oxide semiconductor including hydrogen and at least one element of indium (In) and zinc (Zn), the amorphous oxide semiconductor containing one of hydrogen atoms and deuterium atoms of 1×1020 cm−3 or more to 1×1022 cm−3 or less, and a density of bonds between oxygen and hydrogen except bonds between excess oxygen (OEX) and hydrogen in the amorphous oxide semiconductor being 1×1018 cm−3 or less.
摘要翻译：提供了包含氢和铟（In）和锌（Zn）的至少一种元素的非晶氧化物半导体，含有1×1020cm-3以上至1×1022的氢原子和氘原子之一的非晶氧化物半导体 cm 3以下，除了非晶形氧化物半导体中的过量氧（OEX）和氢之间的键之外，氧与氢之间的键的密度为1×1018cm-3以下。

29. 发明授权

US08344373B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08344373B2
公开(公告)日：2013-01-01
申请号：US12891704
申请日：2010-09-27
申请人： Ayumu Sato , Hideya Kumomi , Ryo Hayashi , Tomohiro Watanabe
发明人： Ayumu Sato , Hideya Kumomi , Ryo Hayashi , Tomohiro Watanabe
IPC分类号： H01L29/786 , H01L21/84
CPC分类号： H01L29/7869
摘要： To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region.
摘要翻译：为了在氧化物半导体薄层晶体管中实现阈值电压对电应力的稳定性和抑制传输特性中阈值电压变化的两者。薄膜晶体管包括氧化物半导体层和设置成与氧化物半导体层接触的栅极绝缘层，其中氧化物半导体层包含氢原子，并且包括至少两个用作氧化物半导体的有源层的区域并且在层厚度方向上具有不同的平均氢浓度; 并且当用作氧化物半导体的有源层的区域依次定义为从栅极绝缘层的侧面开始第一区域和第二区域时，第一区域的平均氢浓度低于平均氢浓度的第二个地区。

30. 发明授权

US08304298B2 Inverter manufacturing method and inverter 有权
标题翻译：变频器制造方法及变频器
公开(公告)号：US08304298B2
公开(公告)日：2012-11-06
申请号：US12597211
申请日：2008-05-15
申请人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
发明人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L27/1233
摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.
摘要翻译：为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

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