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21. 发明申请

US20170062599A1 SEMICONDUCTOR CELL 审中-公开
公开(公告)号：US20170062599A1
公开(公告)日：2017-03-02
申请号：US15246900
申请日：2016-08-25
申请人： HUGA OPTOTECH, INC.
发明人： Tien-Ching FENG , Tsung-Cheng CHANG
IPC分类号： H01L29/778 , H01L29/04 , H01L29/10 , H01L29/20
CPC分类号： H01L29/7786 , H01L29/045 , H01L29/0657 , H01L29/1029 , H01L29/1037 , H01L29/1066 , H01L29/2003 , H01L29/205 , H01L29/42356 , H01L29/872
摘要： A semiconductor cell includes a substrate; a buffer structure disposed on the substrate; a channel layer having a band gap, and including a first portion on the buffer structure and a first protrusion which is disposed on the first portion and has a first top surface and a first inclined surface connecting to the first top surface; a barrier having a band gap greater than the band gap of the channel layer, disposed on the channel layer, and including a second portion disposed on the first portion, and a second protrusion covering the first top surface of the first protrusion and having a second top surface and a second inclined surface connecting to the second top surface and parallel to the first inclined surface; a first electrode disposed on the second protrusion; and a second electrode disposed on the second portion of the barrier and separated from the first electrode.
摘要翻译：半导体单元包括基板; 设置在所述基板上的缓冲结构; 具有带隙的沟道层，并且包括缓冲结构上的第一部分和设置在第一部分上并具有连接到第一顶表面的第一顶表面和第一倾斜表面的第一突起; 具有比所述沟道层的带隙大的带隙的阻挡层，设置在所述沟道层上，并且包括设置在所述第一部分上的第二部分，以及覆盖所述第一突起的第一顶表面的第二突起，并且具有第二顶表面和连接到第二顶表面并平行于第一倾斜表面的第二倾斜表面; 设置在所述第二突起上的第一电极; 以及设置在所述阻挡层的第二部分上并与所述第一电极分离的第二电极。

22. 发明授权

US09263530B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US09263530B2
公开(公告)日：2016-02-16
申请号：US14140260
申请日：2013-12-24
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Chih-Ching Cheng , Tsung-Cheng Chang
IPC分类号： H01L29/778 , H01L29/207 , H01L29/20 , H01L29/66 , H01L29/36 , H01L29/10
CPC分类号： H01L29/207 , H01L29/1075 , H01L29/2003 , H01L29/36 , H01L29/66431 , H01L29/66439 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要： A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.
摘要翻译：本文公开的场效应晶体管（FET）包括衬底，设置在衬底上的C掺杂半导体层，设置在C掺杂半导体层上的沟道层和设置在沟道层上的电子供给层。 FET还包括设置在C掺杂半导体层和沟道层之间的扩散阻挡层，其中扩散阻挡层直接与沟道层接触。

23. 发明授权

US09093602B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09093602B2
公开(公告)日：2015-07-28
申请号：US13662565
申请日：2012-10-29
申请人： HUGA OPTOTECH INC.
发明人： Wei-Chih Wen , Shiou-Yi Kuo , Tai-Chun Wang
IPC分类号： H01L33/00 , H01L33/20 , H01L33/60 , H01L33/24 , H01L33/62
CPC分类号： H01L33/20 , H01L33/24 , H01L33/60 , H01L33/62
摘要： A semiconductor light emitting device includes a substrate having a main surface and an exposed surface; an epitaxial structure, disposed on the main surface of the substrate, having at least a first type semiconductor layer, a light-emitting layer, and a second type semiconductor layer, wherein the first type layer has a first sidewall including at least a first etched surface and a second etched surface, wherein angles between the etched surfaces and the exposed surface are acute angles; and an electrode structure disposed on the epitaxial structure.
摘要翻译：半导体发光器件包括具有主表面和暴露表面的衬底; 外延结构，设置在所述基板的主表面上，具有至少第一类型半导体层，发光层和第二类型半导体层，其中所述第一类型层具有第一侧壁，所述第一侧壁至少包括第一蚀刻表面和第二蚀刻表面，其中蚀刻表面和暴露表面之间的角度是锐角; 以及设置在所述外延结构上的电极结构。

24. 发明申请

US20150097199A1 LED ASSEMBLY 有权
标题翻译： LED组装
公开(公告)号：US20150097199A1
公开(公告)日：2015-04-09
申请号：US14493940
申请日：2014-09-23
申请人： HUGA OPTOTECH INC. , Interlight Optotech Corporation
发明人： TZER-PERNG CHEN , TZU-CHI CHENG
IPC分类号： H01L27/15 , H01L33/50
CPC分类号： H01L33/504 , H01L33/486 , H01L33/507 , H01L33/62 , H01L2224/48137 , H01L2224/48464 , H01L2224/49109 , H01L2924/181 , H01L2924/00012
摘要： This disclosure discloses an LED assembly. The LED assembly comprises a transparent substrate; a first phosphor layer; a transparent mount, having a plurality of trenches substantially in parallel to each other, wherein the first phosphor layer is positioned between the transparent substrate and the transparent mount; an LED chip, mounted on an area of the transparent mount, wherein the area is located substantially between the trenches; and a second phosphor layer inside the trenches.
摘要翻译：本公开公开了一种LED组件。 LED组件包括透明基板; 第一磷光体层; 透明安装件，具有大致平行的多个沟槽，其中所述第一荧光体层位于所述透明基板和所述透明安装件之间; 一个LED芯片，安装在透明支架的一个区域上，其中该区域基本位于两个沟槽之间; 和沟槽内的第二磷光体层。

25. 发明申请

US20140375201A1 LED LIGHT LAMPS USING STACK EFFECT FOR IMPROVING HEAT DISSIPATION 有权
标题翻译： LED灯具使用堆叠效果来改善散热
公开(公告)号：US20140375201A1
公开(公告)日：2014-12-25
申请号：US14309750
申请日：2014-06-19
申请人： Huga Optotech Inc. , Interlight Optotech Corporation
发明人： Hwa SU , Tzu-Chi CHENG , Hong-Zhi LIU , Yu-Min LI
IPC分类号： F21V29/02 , F21V29/00 , F21K99/00
CPC分类号： F21V29/004 , F21K9/232 , F21V3/00 , F21V29/506 , F21V29/83 , F21Y2103/10 , F21Y2115/10
摘要： A light-emitting lamp has a bulb shell, a convective accelerator, a light-emitting filament and a bulb base. The bulb shell defines an interior volume filled with a filling gas, and comprises a first transparent material. The convective accelerator is disposed within the interior volume, and comprises a second transparent material. The convective accelerator contains a flue with first and second openings. The light-emitting filament is disposed within the flue, comprising a plurality of semiconductor light-emitting elements. When the light-emitting filament emits light to generate heat, the flue allows a convection flow of the filling gas to pass into one of the first and second openings. The bulb base supports the bulb shell and the light-emitting filament, and has electrical conductors in electrical communication with the light-emitting filament. The first and the second openings have different distances apart from the bulb base.
摘要翻译：发光灯具有灯泡壳，对流加速器，发光灯丝和灯泡基座。灯泡壳体限定填充有填充气体的内部容积，并且包括第一透明材料。对流加速器设置在内部容积内，并且包括第二透明材料。对流加速器含有具有第一和第二开口的烟道。发光灯丝设置在烟道内，包括多个半导体发光元件。当发光灯丝发光以产生热量时，烟道允许填充气体的对流流动进入第一和第二开口之一。灯泡底座支撑灯泡壳和发光灯丝，并且具有与发光灯丝电连通的电导体。第一和第二开口具有与灯泡基座不同的距离。

26. 发明申请

US20140175517A1 FIELD EFFECT TRANSISTOR 有权
标题翻译：场效应晶体管
公开(公告)号：US20140175517A1
公开(公告)日：2014-06-26
申请号：US14140260
申请日：2013-12-24
申请人： HUGA OPTOTECH INC. , EPISTAR CORPORATION
发明人： Chih-Ching CHENG , Tsung-Cheng CHANG
IPC分类号： H01L29/778 , H01L29/205 , H01L29/20 , H01L29/207
CPC分类号： H01L29/207 , H01L29/1075 , H01L29/2003 , H01L29/36 , H01L29/66431 , H01L29/66439 , H01L29/66462 , H01L29/778 , H01L29/7786
摘要： A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.
摘要翻译：本文公开的场效应晶体管（FET）包括衬底，设置在衬底上的C掺杂半导体层，设置在C掺杂半导体层上的沟道层和设置在沟道层上的电子供给层。 FET还包括设置在C掺杂半导体层和沟道层之间的扩散阻挡层，其中扩散阻挡层直接与沟道层接触。

27. 发明申请

US20130140581A1 OPTICAL DEVICE 审中-公开
标题翻译：光学装置
公开(公告)号：US20130140581A1
公开(公告)日：2013-06-06
申请号：US13752350
申请日：2013-01-28
申请人： EPISTAR CORPORATION , HUGA OPTOTECH Inc.
发明人： Tzong-Liang Tsai , Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/46
摘要： An optical device is provided. Multi-layer structures are disposed on a substrate, wherein each of the multi-layer structures is consisting of at least two insulated layers with different refractive indexes formed alternately. A buffer layer covers the multi-layer structures, so that said multi-layer structures are disposed between the buffer layer and the substrate, wherein said buffer layer is an un-doped GaN based semiconductor layer. A first conductive semiconductor layer is disposed on the buffer layer. An active layer is disposed on said first conductive semiconductor layer. A second conductive semiconductor layer is disposed on said active layer and a transparent conductive layer is disposed on said second conductive semiconductor layer.
摘要翻译：提供光学装置。多层结构设置在基板上，其中多层结构中的每一个由交替形成不同折射率的至少两个绝缘层组成。缓冲层覆盖多层结构，使得所述多层结构设置在缓冲层和衬底之间，其中所述缓冲层是未掺杂的GaN基半导体层。第一导电半导体层设置在缓冲层上。有源层设置在所述第一导电半导体层上。第二导电半导体层设置在所述有源层上，并且透明导电层设置在所述第二导电半导体层上。

28. 发明授权

US10319886B2 LED assembly for omnidirectional light appliances 有权
公开(公告)号：US10319886B2
公开(公告)日：2019-06-11
申请号：US15955652
申请日：2018-04-17
申请人： HUGA OPTOTECH INC. , Interlight Optotech Corporation
发明人： Tzer-Perng Chen , Tzu-Chi Cheng
IPC分类号： H01L33/52 , H01L33/50 , H01L33/48 , H01L33/62
摘要： This disclosure discloses an LED assembly. The LED assembly includes a transparent mount with a top surface and a bottom surface opposite to the top surface, an LED chip arranged on the top surface, an electrode plate, a first phosphor layer having a first phosphor, and a second phosphor layer having a second phosphor, wherein the transparent mount and the electrode plate substantially have a same width. The electrode plate is arranged on an edge of the top surface and electrically connected to the LED chip.

29. 发明授权

US09546762B2 LED assembly 有权
标题翻译： LED组装
公开(公告)号：US09546762B2
公开(公告)日：2017-01-17
申请号：US14460943
申请日：2014-08-15
申请人： HUGA OPTOTECH INC. , Interlight Optotech Corporation
发明人： Tzer-Perng Chen , Tzu-Chi Cheng
IPC分类号： F21K99/00 , H01L23/00 , H01L25/075 , H01L33/50 , F21Y101/00
CPC分类号： F21K9/27 , F21K9/232 , F21Y2101/00 , F21Y2103/10 , F21Y2115/10 , H01L24/24 , H01L25/0753 , H01L33/504 , H01L2224/48091 , H01L2224/48137 , H01L2224/48464 , H01L2224/49107 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Disclosed are LED assemblies and their applications. An example LED assembly has an LED chip, a supportive structure and a transparent structure. The LED chip includes a transparent substrate, at least one LED cell, and two pads. The transparent substrate has a top surface with two terminals. The LED cell is formed on the top surface, and includes at least one light-emitting stack configured to emit light. The pad is formed on the top surface at the two terminals. The supportive structure has a transparent portion and a conductive portion. The conductive portion is connected to the transparent portion to fix the LED chip and supply electric power to at least one of the pads. The transparent structure encapsulates the LED cell.
摘要翻译：公开了LED组件及其应用。示例性LED组件具有LED芯片，支撑结构和透明结构。 LED芯片包括透明基板，至少一个LED电池和两个焊盘。透明基板具有带有两个端子的顶面。 LED电池形成在顶表面上，并且包括被配置为发光的至少一个发光叠层。垫在两个端子的顶表面上形成。支撑结构具有透明部分和导电部分。导电部分连接到透明部分以固定LED芯片并将电力提供给至少一个焊盘。透明结构封装了LED电池。

30. 发明授权

US09502622B2 LED assembly 有权
标题翻译： LED组装
公开(公告)号：US09502622B2
公开(公告)日：2016-11-22
申请号：US14493940
申请日：2014-09-23
申请人： HUGA OPTOTECH INC. , Interlight Optotech Corporation
发明人： Tzer-Perng Chen , Tzu-Chi Cheng
IPC分类号： H01L33/50
CPC分类号： H01L33/504 , H01L33/486 , H01L33/507 , H01L33/62 , H01L2224/48137 , H01L2224/48464 , H01L2224/49109 , H01L2924/181 , H01L2924/00012
摘要： This disclosure discloses an LED assembly. The LED assembly comprises a transparent substrate; a first phosphor layer; a transparent mount, having a plurality of trenches substantially in parallel to each other, wherein the first phosphor layer is positioned between the transparent substrate and the transparent mount; an LED chip, mounted on an area of the transparent mount, wherein the area is located substantially between the trenches; and a second phosphor layer inside the trenches.
摘要翻译：本公开公开了一种LED组件。 LED组件包括透明基板; 第一磷光体层; 透明安装件，具有大致平行的多个沟槽，其中所述第一荧光体层位于所述透明基板和所述透明安装件之间; 一个LED芯片，安装在透明支架的一个区域上，其中该区域基本位于两个沟槽之间; 和沟槽内的第二磷光体层。

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