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21. 发明授权

US08999526B2 Organic photoelectronic device and image sensor 有权
标题翻译：有机光电器件和图像传感器
公开(公告)号：US08999526B2
公开(公告)日：2015-04-07
申请号：US13446302
申请日：2012-04-13
申请人： Kwang Hee Lee , Kyu Sik Kim , Kyung Bae Park , Dong-Seok Leem , Seon Jeong Lim
发明人： Kwang Hee Lee , Kyu Sik Kim , Kyung Bae Park , Dong-Seok Leem , Seon Jeong Lim
IPC分类号： H01L51/54 , H01L51/00 , H01L51/42
CPC分类号： H01L51/0072 , H01L51/0068 , H01L51/0074 , H01L51/4253 , Y10S428/917
摘要： An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.
摘要翻译：有机光电装置可以包括被配置为彼此面对的阳极和阴极以及阳极和阴极之间的有源层，其中活性层包括喹吖啶酮衍生物和具有氰基乙烯基的噻吩衍生物。

22. 发明授权

US08933438B2 Photodiode 有权
标题翻译：光电二极管
公开(公告)号：US08933438B2
公开(公告)日：2015-01-13
申请号：US13461250
申请日：2012-05-01
申请人： Dong-Seok Leem , Kyu Sik Kim , Kyung Bae Park , Kwang Hee Lee , Seon-Jeong Lim
发明人： Dong-Seok Leem , Kyu Sik Kim , Kyung Bae Park , Kwang Hee Lee , Seon-Jeong Lim
IPC分类号： H01L51/50 , H01L27/32 , H01L51/56 , H01L51/42
CPC分类号： H01L51/4246 , H01L51/4273 , Y02E10/549
摘要： A photodiode may include an anode, a cathode, a photoelectric conversion layer between the anode and the cathode, and a buffer layer between the photoelectric conversion layer and the anode. The buffer layer may have a dual-layered structure including an organic layer and an inorganic layer.
摘要翻译：光电二极管可以包括阳极，阴极，阳极和阴极之间的光电转换层，以及光电转换层和阳极之间的缓冲层。缓冲层可以具有包括有机层和无机层的双层结构。

23. 发明授权

US08580668B2 Method of forming ohmic contact layer and method of fabricating light emitting device having ohmic contact layer 有权
标题翻译：形成欧姆接触层的方法和制造具有欧姆接触层的发光器件的方法
公开(公告)号：US08580668B2
公开(公告)日：2013-11-12
申请号：US11435827
申请日：2006-05-18
申请人： Jae-hee Cho , Dong-seok Leem , Tae-yeon Seong , Cheol-soo Sone
发明人： Jae-hee Cho , Dong-seok Leem , Tae-yeon Seong , Cheol-soo Sone
IPC分类号： H01L21/44
CPC分类号： H01L33/42 , H01L33/22 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： A method of manufacturing an ohmic contact layer and a method of manufacturing a top emission type nitride-based light emitting device having the ohmic contact layer are provided. The method of manufacturing an ohmic contact layer includes: forming a first conductive material layer on a semiconductor layer; forming a mask layer having a plurality of nano-sized islands on the first conductive material layer; forming a second conductive material layer on the first conductive material layer and the mask layer; and removing the portion of the second conductive material on the islands and the islands through a lift-off process using a solvent. The method ensures the maintenance of good electrical characteristics and an increase of the light extraction efficiency.
摘要翻译：提供一种制造欧姆接触层的方法和制造具有欧姆接触层的顶部发射型氮化物基发光器件的方法。制造欧姆接触层的方法包括：在半导体层上形成第一导电材料层; 在所述第一导电材料层上形成具有多个纳米尺寸岛的掩模层; 在所述第一导电材料层和所述掩模层上形成第二导电材料层; 以及通过使用溶剂的剥离过程去除岛岛上的第二导电材料的部分。该方法确保维持良好的电气特性并提高光提取效率。

24. 发明申请

US20130112947A1 ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR 有权
标题翻译：有机光电器件和图像传感器
公开(公告)号：US20130112947A1
公开(公告)日：2013-05-09
申请号：US13446302
申请日：2012-04-13
申请人： Kwang Hee LEE , Kyu Sik KIM , Kyung Bae PARK , Dong-Seok LEEM , Seon Jeong LIM
发明人： Kwang Hee LEE , Kyu Sik KIM , Kyung Bae PARK , Dong-Seok LEEM , Seon Jeong LIM
IPC分类号： H01L51/54 , H01B1/12 , B82Y30/00
CPC分类号： H01L51/0072 , H01L51/0068 , H01L51/0074 , H01L51/4253 , Y10S428/917
摘要： An organic photoelectric device may include an anode and a cathode configured to face each other, and an active layer between the anode and cathode, wherein the active layer includes a quinacridone derivative and a thiophene derivative having a cyanovinyl group.
摘要翻译：有机光电装置可以包括被配置为彼此面对的阳极和阴极以及阳极和阴极之间的有源层，其中活性层包括喹吖啶酮衍生物和具有氰基乙烯基的噻吩衍生物。

25. 发明申请

US20130062595A1 PHOTODIODE 审中-公开
标题翻译：光电
公开(公告)号：US20130062595A1
公开(公告)日：2013-03-14
申请号：US13354980
申请日：2012-01-20
申请人： Kyung Bae Park , Kyu Sik Kim , Yong Wan Jin , Kwang Hee Lee , Dong-Seok Leem , Seon-Jeong Lim
发明人： Kyung Bae Park , Kyu Sik Kim , Yong Wan Jin , Kwang Hee Lee , Dong-Seok Leem , Seon-Jeong Lim
IPC分类号： H01L51/46
CPC分类号： H01L51/4253 , H01L51/426 , Y02E10/549
摘要： A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
摘要翻译：根据示例性实施例的光电二极管包括在阳极和阴极之间的阳极，阴极和本征层。本征层包括P型半导体和N型半导体，并且P型半导体和N型半导体的组成比在本征层内根据本征层与阳极和阴极。

26. 发明申请

US20130048958A1 QUINACRIDONE DERIVATIVE, AND PHOTOACTIVE LAYER AND PHOTOELECTRIC CONVERSION DEVICE INCLUDING SAME 有权
标题翻译：喹吖啶酮衍生物，以及包含其的光敏层和光电转换装置
公开(公告)号：US20130048958A1
公开(公告)日：2013-02-28
申请号：US13531724
申请日：2012-06-25
申请人： Seon-Jeong Lim , Kyu Sik Kim , Kwang Hee Lee , Dong-Seok Leem , Kyung Bae Park
发明人： Seon-Jeong Lim , Kyu Sik Kim , Kwang Hee Lee , Dong-Seok Leem , Kyung Bae Park
IPC分类号： C07D471/04 , H01L51/54 , H01L51/30 , H01L51/46
CPC分类号： H01L51/0062 , C07D471/06 , C07D487/06 , H01L51/424 , Y02E10/549
摘要： A quinacridone derivative may be represented by Chemical Formula 1, and a photoactive layer and photoelectric conversion device may include the same.
摘要翻译：喹吖啶酮衍生物可以由化学式1表示，光活性层和光电转换装置可以包括它们。

27. 发明申请

US20090124030A1 Nitride-Based Light-Emitting Device and Method of Manufacturing the Same 审中-公开
标题翻译：氮化物基发光器件及其制造方法
公开(公告)号：US20090124030A1
公开(公告)日：2009-05-14
申请号：US12275484
申请日：2008-11-21
申请人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
发明人： Tae-yeon Seong , Kyoung-kook Kim , June-o Song , Dong-seok Leem
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42 , H01L2933/0016 , H01S5/3211 , H01S5/32341
摘要： A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.
摘要翻译：氮化物系发光元件及其制造方法。发光装置包括基板，以及顺序地形成在基板上的n包层，有源层，p包覆层，网格单元层和欧姆接触层。格栅单元层具有隔离的导电粒子型电池，其尺寸小于30微米，埋入欧姆接触层中。氮化物系发光器件及其制造方法提高了p型覆层的欧姆接触特性，从而提高了器件的发光效率和寿命，同时通过省略晶片上的激活工艺简化了制造工艺成长。

28. 发明授权

US07372081B2 Nitride light emitting device and manufacturing method thereof 有权
标题翻译：氮化物发光器件及其制造方法
公开(公告)号：US07372081B2
公开(公告)日：2008-05-13
申请号：US11002795
申请日：2004-12-03
申请人： June-o Song , Tae-yeon Seong , Dong-seok Leem
发明人： June-o Song , Tae-yeon Seong , Dong-seok Leem
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/32
摘要： A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.
摘要翻译：提供具有层叠结构的氮化物LED及其制造方法，其中衬底，n型包覆层，有源层，p型覆层和多欧姆接触层顺序堆叠。在氮化物LED中，多欧姆接触层包括多层第一透明膜层/银/第二透明膜层。在氮化物LED及其制造方法中，相对于p型包层的欧姆接触特性提高，从而表现出良好的电流 - 电压特性。此外，由于透明电极具有高透光性，所以器件的发光效率提高。

29. 发明申请

US20080006842A1 Top-emitting N-based light emitting device and method of manufacturing the same 有权
标题翻译：最高发射型的N型发光器件及其制造方法
公开(公告)号：US20080006842A1
公开(公告)日：2008-01-10
申请号：US11812305
申请日：2007-06-18
申请人： Tae-yeon Seong , Tak-hee Lee , Dong-seok Leem
发明人： Tae-yeon Seong , Tak-hee Lee , Dong-seok Leem
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/42
摘要： Provided is a top-emitting N-based light emitting device and a method of manufacturing the same. The N-based light emitting device may include an n-type clad layer, an active layer, a p-type clad layer, and a transparent conductive thin film which may be sequentially stacked on a substrate. The transparent conductive thin film may have a surface nano-scale patterned by wet-etching and then annealing without using a mask for improving the light extraction rate. A light emitting device having a higher brightness may be prepared by increasing or maximizing the light extraction rate by employing the transparent conductive thin film having the surface patterned by wet-etching and then annealing.
摘要翻译：提供了一种顶发射型N型发光器件及其制造方法。该N系发光元件可以包括可依次层叠在基板上的n型覆盖层，有源层，p型覆盖层和透明导电性薄膜。透明导电薄膜可以具有通过湿蚀刻然后退火而不使用掩模来提高光提取速率的图案化的表面纳米级。具有较高亮度的发光器件可以通过使用具有通过湿蚀刻图形化然后退火的表面的透明导电薄膜来增加或最大化光提取率来制备。

30. 发明授权

US07285857B2 GaN-based III—V group compound semiconductor device and p-type electrode for the same 有权
标题翻译： GaN基III-V族化合物半导体器件和p型电极
公开(公告)号：US07285857B2
公开(公告)日：2007-10-23
申请号：US10953282
申请日：2004-09-30
申请人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
发明人： Joon-seop Kwak , Tae-yeon Seong , Ok-hyun Nam , June-o Song , Dong-seok Leem
IPC分类号： H01L29/45 , H01L33/00
CPC分类号： H01L33/40 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L33/32
摘要： Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a second layer stacked on the first layer and formed of at least one selected from the group consisting of Au, Co, Pd, Pt, Ru, Rh, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, ITO, and ZnO. The Zn-based p-type electrode has excellent electrical, optical, and thermal properties.
摘要翻译：提供了使用该p型电极和III-V族GaN基化合物半导体器件。电极包括设置在III-V族氮化物化合物半导体层上并由含有溶质的Zn基材料形成的第一层; 以及层叠在第一层上并由选自Au，Co，Pd，Pt，Ru，Rh，Ir，Ta，Cr，Mn，Mo，Tc，W，Re，Fe中的至少一种形成的第二层，Sc，Ti，Sn，Ge，Sb，Al，ITO和ZnO。 Zn基p型电极具有优异的电学，光学和热学特性。

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