专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US07989155B2 Lithographic method 有权
标题翻译：平版印刷法
公开(公告)号：US07989155B2
公开(公告)日：2011-08-02
申请号：US12065930
申请日：2006-09-05
申请人： Peter Zandbergen , Jeroen H Lammers , David Van Steenwinckel
发明人： Peter Zandbergen , Jeroen H Lammers , David Van Steenwinckel
IPC分类号： G03F7/40 , G03F7/38
CPC分类号： G03F7/0392 , G03F7/0382
摘要： The present invention provides a method of lithographic patterning. The method comprises: applying to a surface to be patterned a photoresist (18) comprising a polymer resin, a photocatalyst generator which generates a catalyst on exposure to actinic radiation, and a quencher; exposing the photoresist (18) to actinic radiation through a mask pattern (12); carrying out a post-exposure bake; and then developing the photoresist (18) with a developer to remove a portion of the photoresist which has been rendered soluble in the developer. Either the polymer resin is substantially insoluble in the developer prior to exposure to actinic radiation and rendered soluble in the developer by the action of the catalyst, and by the action of the quencher during the bake, or the polymer resin is soluble in the developer prior to exposure to actinic radiation and rendered substantially insoluble in the developer by the action of the catalyst, and by the action of the quencher during the bake.
摘要翻译：本发明提供一种平版印刷图案化方法。该方法包括：向待图案化的表面施加包含聚合物树脂的光致抗蚀剂（18），在曝光于光化辐射时产生催化剂的光催化剂产生剂和猝灭剂; 通过掩模图案（12）将光致抗蚀剂（18）暴露于光化辐射; 进行曝光后烘烤; 然后用显影剂显影光致抗蚀剂（18）以除去已经溶解在显影剂中的一部分光致抗蚀剂。聚合物树脂在暴露于光化辐射之前基本上不溶于显影剂，并且通过催化剂的作用并且通过猝灭剂在烘烤期间的作用而使其溶解在显影剂中，或者聚合物树脂可溶于显影剂前暴露于光化辐射并且通过催化剂的作用基本上不溶于显影剂，并且通过在烘烤期间猝灭剂的作用。

22. 发明申请

US20110121705A1 APPARATUS FOR REGULATING THE TEMPERATURE OF A LIGHT EMITTING DIODE 有权
标题翻译：用于调节发光二极管的温度的装置
公开(公告)号：US20110121705A1
公开(公告)日：2011-05-26
申请号：US12910583
申请日：2010-10-22
申请人： Pascal BANCKEN , Viet NGUYEN HOANG , Radu SURDEANU , Benoit BATAILLOU , David van STEENWINCKEL
发明人： Pascal BANCKEN , Viet NGUYEN HOANG , Radu SURDEANU , Benoit BATAILLOU , David van STEENWINCKEL
IPC分类号： H01J61/52
CPC分类号： H01L33/642 , F21V29/70 , F21Y2115/10 , H01L33/483 , H01L33/486 , H01L2924/0002 , H01L2924/00
摘要： Apparatus for regulating the temperature of a light emitting diode (LED). The apparatus includes a heat sink, an LED mount, and an LED mounted on the LED mount. The LED mount is configured to change shape in response to a change in temperature. The change in shape alters the position of the LED relative to the heat sink, for adjusting heat transfer between the LED and the heat sink. The LED mount may include a laminated portion such as a bi-metallic strip.
摘要翻译：用于调节发光二极管（LED）的温度的装置。该装置包括散热器，LED安装座和安装在LED安装座上的LED。 LED安装座被配置为响应于温度变化而改变形状。形状的变化会改变LED相对于散热片的位置，以调节LED和散热片之间的热传递。 LED支架可以包括诸如双金属条的层压部分。

23. 发明申请

US20100028809A1 DOUBLE PATTERNING FOR LITHOGRAPHY TO INCREASE FEATURE SPATIAL DENSITY 有权
标题翻译：用于提升特征空间密度的双重图案
公开(公告)号：US20100028809A1
公开(公告)日：2010-02-04
申请号：US12514777
申请日：2007-11-13
申请人： Anja Monique Vanleenhove , Peter Dirksen , David Van Steenwinckel , Gerben Doornbos , Casper Juffermans , Mark Van Dal
发明人： Anja Monique Vanleenhove , Peter Dirksen , David Van Steenwinckel , Gerben Doornbos , Casper Juffermans , Mark Van Dal
IPC分类号： G03F7/20
CPC分类号： G03F7/0035 , G03F7/11 , H01L21/0271 , H01L21/0273 , H01L21/823821 , H01L29/66795 , H01L29/6681 , H01L29/785
摘要： A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and/or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spartial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.
摘要翻译：在衬底中或衬底上的至少一个器件层中形成图案的方法包括：用第一光致抗蚀剂层涂覆器件层; 使用第一掩模曝光第一光致抗蚀剂; 显影第一光致抗蚀剂层以在基底上形成第一图案; 用保护层涂覆基板; 处理保护层以在其中与第一光致抗蚀剂接触的地方发生变化，使得改变的保护层基本上不受随后的曝光和/或显影步骤的影响; 用第二光致抗蚀剂层涂覆基板; 使用第二掩模曝光所述第二光致抗蚀剂层; 并且显影所述第二光致抗蚀剂层以在所述衬底上形成第二图案，而不会显着影响所述第一光致抗蚀剂层中的所述第一图案，其中所述第一和第二图案一起限定散布特征，其间隔频率大于每个第一和第二模式分开。该方法在定义具有较小的特征尺寸的finFET器件的源极，漏极和鳍片特征方面具有特别的用途，而与主要的光刻工具不同。

24. 发明授权

US09081251B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09081251B2
公开(公告)日：2015-07-14
申请号：US13056116
申请日：2009-07-27
申请人： Benoit Bataillou , Radu Surdeanu , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang
发明人： Benoit Bataillou , Radu Surdeanu , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang
IPC分类号： G02F1/19 , G02F1/23
CPC分类号： G02F1/19 , G02F1/0147 , G02F1/23 , G02F2203/10 , G09G2300/00
摘要： A display device comprises a substrate which carries an array of pixels. Each pixel comprises an array of apertures in the substrate, each aperture of the array having a maximum opening dimension less than the wavelength of the light to be transmitted through the aperture. The effective dielectric constant of the aperture and/or the dielectric constant of the substrate is varied, thereby to vary the light transmission characteristics of the pixel between transmission of at least one frequency in the visible spectrum and transmission of substantially no frequency in the visible spectrum.
摘要翻译：显示装置包括承载像素阵列的基板。每个像素包括衬底中的孔阵列，阵列的每个孔具有小于要透过孔的光的波长的最大开口尺寸。孔的有效介电常数和/或介质的介电常数发生变化，从而改变可见光谱中的至少一个频率的透射之间像素的透光特性以及可见光谱中基本上没有频率的透射。

25. 发明申请

US20130207206A1 SEMICONDUCTOR DEVICE HAVING AU-CU ELECTRODES, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：具有AU-CU电极的半导体器件及制造半导体器件的方法
公开(公告)号：US20130207206A1
公开(公告)日：2013-08-15
申请号：US13568695
申请日：2012-08-07
申请人： David VAN STEENWINCKEL , Thomas MERELLE , Franciscus Petrus WIDDERSHOVEN , Viet Hoang NGUYEN , Dimitri SOCCOl , Jan Leo Dominique FRANSAER
发明人： David VAN STEENWINCKEL , Thomas MERELLE , Franciscus Petrus WIDDERSHOVEN , Viet Hoang NGUYEN , Dimitri SOCCOl , Jan Leo Dominique FRANSAER
IPC分类号： H01L29/66
CPC分类号： G01N27/4145 , G01N27/3275 , H01L29/66
摘要： A method of manufacturing a biosensor semiconductor device in which copper electrodes at a major surface of the device are modified to form Au—Cu alloy electrodes. Such modification is effected by depositing a gold layer over the device, and then thermally treating the device to promote interdiffusion between the gold and the electrode copper. Alloyed gold-copper is removed from the surface of the device, leaving the exposed electrodes. The electrodes are better compatible with further processing into a biosensor device than is the case with conventional copper electrodes, and the process windows are wider than for gold capped copper electrodes. A biosensor semiconductor device having Au—Cu alloy electrodes is also disclosed.
摘要翻译：一种制造生物传感器半导体器件的方法，其中在器件的主表面上的铜电极被改性以形成Au-Cu合金电极。通过在器件上沉积金层，然后对该器件进行热处理以促进金和电极铜之间的相互扩散来实现这种修改。从器件的表面去除合金金铜，留下暴露的电极。与常规铜电极的情况相比，电极与生物传感器装置的进一步处理更好地兼容，并且处理窗口比金盖铜电极宽。还公开了具有Au-Cu合金电极的生物传感器半导体器件。

26. 发明授权

US08368877B2 Measuring apparatus 有权
标题翻译：测量装置
公开(公告)号：US08368877B2
公开(公告)日：2013-02-05
申请号：US13002017
申请日：2009-07-01
申请人： Benoit Bataillou , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang , Radu Surdeanu
发明人： Benoit Bataillou , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang , Radu Surdeanu
IPC分类号： G01N33/48 , G01N21/01
CPC分类号： C09K11/06 , G01N15/1459 , G01N21/45 , G01N2021/458
摘要： An apparatus comprising at least one measuring cell (10) is disclosed. The measuring cell comprises a first cavity (16 and a second cavity (18) perpendicular to the first cavity, the first cavity and the second cavity comprising an overlap at first respective ends and a reflective surface (20) at the opposite respective ends. A beam splitter (15) is located in the overlap and an electromagnetic radiation source (12) is arranged to project a beam of electromagnetic radiation onto the beam splitter (15) such that the beam is projected into each of the cavities. A phase detector (22) for detecting a phase difference between the respective electromagnetic radiation reflected by the first and second cavity (16; 18) is also provided. In addition, the apparatus has a fluid channel (26), at least a part of which runs parallel to the first cavity (16) such that the electromagnetic radiation projected into the first cavity extends into said part of the fluid channel. This allows for the interferometric detection of particles in the fluid channel.
摘要翻译：公开了一种包括至少一个测量单元（10）的装置。所述测量单元包括第一空腔（16和垂直于所述第一空腔的第二空腔），所述第一空腔和所述第二空腔包括在第一相应端部处的重叠部分和在相对的相应端部处的反射表面（20）分束器（15）位于重叠中，并且电磁辐射源（12）被布置成将电磁辐射束投射到分束器（15）上，使得射束投射到每个空腔中。相位检测器还提供了用于检测由第一和第二空腔（16; 18）反射的各个电磁辐射之间的相位差的装置（22），另外，该装置具有流体通道（26），其流体通道的至少一部分平行于所述第一空腔（16）使得投射到所述第一空腔中的电磁辐射延伸到所述流体通道的所述部分中，这允许对所述流体通道中的颗粒进行干涉检测。

27. 发明授权

US08348505B2 Self-calibration circuit and method for junction temperature estimation 有权
标题翻译：自校准电路及结温估算方法
公开(公告)号：US08348505B2
公开(公告)日：2013-01-08
申请号：US12971738
申请日：2010-12-17
申请人： Viet Nguyen Hoang , Pascal Bancken , Radu Surdeanu , Benoit Bataillou , David van Steenwinckel
发明人： Viet Nguyen Hoang , Pascal Bancken , Radu Surdeanu , Benoit Bataillou , David van Steenwinckel
IPC分类号： G01K7/00
CPC分类号： G01K7/01 , G01K15/00 , H05B33/089
摘要： The present invention relates to a calibration circuit, computer program product, and method of calibrating a junction temperature measurement of a semiconductor element, wherein respective forward voltages at junctions of the semiconductor element and a reference temperature sensor are measured, and an absolute ambient temperature is determined by using the reference temperature sensor, and the junction temperature of the semiconductor element is predicted based on the absolute ambient temperature and the measured forward voltages.
摘要翻译：本发明涉及校准电路，计算机程序产品和校准半导体元件的结温测量的方法，其中测量半导体元件和基准温度传感器的接合处的各个正向电压，绝对环境温度为通过使用参考温度传感器确定，并且基于绝对环境温度和所测量的正向电压来预测半导体元件的结温。

28. 发明申请

US20110133214A1 LIGHT SENSOR DEVICE AND MANUFACTURING METHOD 有权
标题翻译：光传感器装置和制造方法
公开(公告)号：US20110133214A1
公开(公告)日：2011-06-09
申请号：US12994650
申请日：2009-05-21
申请人： Viet Nguyen Hoang , Radu Surdeanu , Pascal Bancken , Benoit Bataillou , David Van Steenwinckel
发明人： Viet Nguyen Hoang , Radu Surdeanu , Pascal Bancken , Benoit Bataillou , David Van Steenwinckel
IPC分类号： H01L31/147 , H01L31/0232 , H01L31/18
CPC分类号： H05B33/0869 , G01J1/02 , G01J1/0209 , G01J1/04 , G01J1/0407 , G01J1/0425 , G01J1/32 , G01J2001/4247 , H05B33/0821
摘要： A light sensor device comprises a substrate (10) having a well (12) defined in one surface. At least one light sensor (14) is formed at the base of the well (12), and an optical light guide (18) in the form of a transparent tunnel (18) within an opaque body (20) extends from a top surface of the device down a sloped side wall of the well (12) to the location of the light sensor (14).
摘要翻译：光传感器装置包括具有在一个表面中限定的阱（12）的衬底（10）。至少一个光传感器（14）形成在井（12）的基部处，并且在不透明体（20）内的透明隧道（18）形式的光导（18）从顶表面（12）的倾斜的侧壁上的装置到光传感器（14）的位置。

29. 发明申请

US20110109897A1 MEASURING APPARATUS 有权
标题翻译：测量装置
公开(公告)号：US20110109897A1
公开(公告)日：2011-05-12
申请号：US13002017
申请日：2009-07-01
申请人： Benoit Bataillou , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang , Radu Surdeanu
发明人： Benoit Bataillou , Pascal Bancken , David van Steenwinckel , Viet Nguyen Hoang , Radu Surdeanu
IPC分类号： G01N33/48 , G01B9/02 , G01N21/45
CPC分类号： C09K11/06 , G01N15/1459 , G01N21/45 , G01N2021/458
摘要： An apparatus comprising at least one measuring cell (10) is disclosed. The measuring cell comprises a first cavity (16 and a second cavity (18) perpendicular to the first cavity, the first cavity and the second cavity comprising an overlap at first respective ends and a reflective surface (20) at the opposite respective ends. A beam splitter (15) is located in the overlap and an electromagnetic radiation source (12) is arranged to project a beam of electromagnetic radiation onto the beam splitter (15) such that the beam is projected into each of the cavities. A phase detector (22) for detecting a phase difference between the respective electromagnetic radiation reflected by the first and second cavity (16; 18) is also provided. In addition, the apparatus has a fluid channel (26), at least a part of which runs parallel to the first cavity (16) such that the electromagnetic radiation projected into the first cavity extends into said part of the fluid channel. This allows for the interferometric detection of particles in the fluid channel.
摘要翻译：公开了一种包括至少一个测量单元（10）的装置。所述测量单元包括第一空腔（16和垂直于所述第一空腔的第二空腔），所述第一空腔和所述第二空腔包括在第一相应端部处的重叠部分和在相对的相应端部处的反射表面（20）分束器（15）位于重叠中，并且电磁辐射源（12）被布置成将电磁辐射束投射到分束器（15）上，使得射束投射到每个空腔中。相位检测器还提供了用于检测由第一和第二空腔（16; 18）反射的各个电磁辐射之间的相位差的装置（22），另外，该装置具有流体通道（26），其流体通道的至少一部分平行于所述第一空腔（16）使得投射到所述第一空腔中的电磁辐射延伸到所述流体通道的所述部分中，这允许对所述流体通道中的颗粒进行干涉检测。

30. 发明授权

US07897323B2 Lithographic method 有权
标题翻译：平版印刷法
公开(公告)号：US07897323B2
公开(公告)日：2011-03-01
申请号：US11720315
申请日：2005-11-10
申请人： David Van Steenwinckel , Peter Zandbergen
发明人： David Van Steenwinckel , Peter Zandbergen
IPC分类号： G03F7/26
CPC分类号： G03F7/30 , G03F7/095 , G03F7/32
摘要： A method of achieving frequency doubled lithographic patterning is described. An optical pattern (16) having a first period (p1) is used to expose conventional acid-catalysed photoresist (18) on substrate (20), leaving regions of high exposure (24), regions of low exposure (26) and intermediate regions (22). Processing proceeds leaving regions (24) which received high exposure very polar, i.e. hydrophilic, regions (26) of low exposure very apolar, i.e. hydrophobic, and the intermediate regions having intermediate polarity. A developer of intermediate polarity such as propylene glycol methyl ether acetate is then used to dissolve only the intermediate regions (22) leaving photoresist patterned to have a pitch (p2) half that of the optical period (p1). Alternatively, the photoresist is removed from the apolar and polar regions leaving only the intermediate regions (22) again with the same pitch (p2) half that of the optical period (p1).
摘要翻译：描述了实现倍频光刻图案的方法。使用具有第一周期（p1）的光学图案（16）来暴露基底（20）上的常规酸催化光致抗蚀剂（18），留下高曝光区域（24），低曝光区域（26）和中间区域（22）。处理进行离开区域（24），其接收高暴露非常极性，即亲水性低暴露非极性（即疏水性）的区域（26），并且具有中等极性的中间区域。然后使用中等极性的显影剂，例如丙二醇甲基醚乙酸酯仅溶解中间区域（22），留下光刻胶图案化成具有光学期间（p1）的间距（p2）的一半。或者，光致抗蚀剂从非极性区域和极性区域移除，仅再次以与光学周期（p1）相同的间距（p2）为中间区域（22）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式