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    • 21. 发明授权
    • Pseudo bipolar junction transistor
    • 伪双极结晶体管
    • US06323719B1
    • 2001-11-27
    • US09565751
    • 2000-05-08
    • Cheng-Chieh ChangShen-Iuan Liu
    • Cheng-Chieh ChangShen-Iuan Liu
    • H03K1760
    • H03F3/45085H03F3/3432H03F2203/45318H03F2203/45344
    • A pseudo bipolar junction transistor according to the invention includes two MOS transistors operating in saturation region, electrically connected in parallel with their drains and sources functioning as a collector and a emitter of the pseudo bipolar junction transistor, respectively, a first gate without any signal inputted and a second gate functioning as a base of the pseudo bipolar junction transistor, wherein the two gates is supplied with the same DC bias. The pseudo bipolar junction transistor is manufactured by CMOS process for applications in variable gain amplifiers, transfer linear function signal processors and logarithmic filters.
    • 根据本发明的伪双极结型晶体管包括两个工作在饱和区的MOS晶体管,它们的漏极和源极分别与伪双极结型晶体管的集电极和发射极并联电连接,第一栅极没有任何信号输入 以及用作伪双极结型晶体管的基极的第二栅极,其中两个栅极被提供相同的DC偏置。 伪双极结晶体管由CMOS工艺制造,用于可变增益放大器,传输线性功能信号处理器和对数滤波器。
    • 26. 发明授权
    • Touch sensing layer and manufacturing method thereof
    • 触感传感层及其制造方法
    • US08963856B2
    • 2015-02-24
    • US13364321
    • 2012-02-02
    • Chen-Yu LiuLu-Hsing LeeCheng-Chieh ChangChing-Shan Lin
    • Chen-Yu LiuLu-Hsing LeeCheng-Chieh ChangChing-Shan Lin
    • G06F3/041G06F3/044G06F3/045
    • G06F3/044G06F3/045Y10T29/49105
    • The present invention relates to a touch sensing layer which comprises at least one first-axis sensing electrode, second-axis sensing electrode, insulating element and conductive bridge. Each first-axis sensing electrode comprises a plurality of first electrode patterns with discontinuity-in-series, and each second-axis sensing electrode is configured to interlace with each first-axis sensing electrode and comprises a plurality of second electrode patterns with continuity-in-series. Each insulating element is continuously formed on the corresponding second-axis sensing electrode, and each conductive bridge is also continuously formed above the corresponding first-axis sensing electrode and crosses the insulating element to connect those first electrode patterns with discontinuity-in-series.
    • 本发明涉及一种触摸感测层,其包括至少一个第一轴感测电极,第二轴感测电极,绝缘元件和导电桥。 每个第一轴感测电极包括具有不连续串联的多个第一电极图案,并且每个第二轴感测电极被配置成与每个第一轴感测电极交错并且包括具有连续性的多个第二电极图案 -系列。 每个绝缘元件连续地形成在相应的第二轴感测电极上,并且每个导电桥也连续地形成在对应的第一轴感测电极上方,并与绝缘元件交叉,以将那些第一电极图案与不连续的串联连接。
    • 29. 发明授权
    • Coating structure with an anti-reflection function and an anti-electromagnetic wave function
    • 涂层结构具有抗反射功能和抗电磁波功能
    • US07833628B2
    • 2010-11-16
    • US12007063
    • 2008-01-07
    • Cheng-Chieh ChangShiu-Feng LiuPi-Jui Kuo
    • Cheng-Chieh ChangShiu-Feng LiuPi-Jui Kuo
    • B32B7/00B32B15/00
    • G02B1/116H05K9/0096Y10T428/24364Y10T428/24942
    • A coating structure with an anti-reflection function and an anti-electromagnetic wave function, including an anti-reflection coating structure, an anti-electromagnetic wave coating structure, a third transparent substrate, and two adhesive layers respectively disposed between the anti-reflection coating structure and the third transparent substrate and between the third transparent substrate and the anti-electromagnetic wave coating structure. The anti-reflection coating structure has a first transparent substrate and an anti-reflection coating module formed on the first transparent substrate. The anti-electromagnetic wave coating structure has a second transparent substrate and an anti-electromagnetic wave coating module formed on the second transparent substrate. The third transparent substrate is disposed between the anti-reflection coating structure and the anti-electromagnetic wave coating structure.
    • 具有抗反射功能和抗电磁波功能的涂层结构,包括防反射涂层结构,抗电磁波涂覆结构,第三透明基板和分别设置在防反射涂层之间的两个粘合层 第三透明基板和第三透明基板与抗电磁波涂层结构之间。 防反射涂层结构具有形成在第一透明基板上的第一透明基板和防反射涂层模块。 抗电磁波涂覆结构具有形成在第二透明基板上的第二透明基板和抗电磁波涂覆模块。 第三透明基板设置在防反射涂层结构和抗电磁波涂覆结构之间。