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21. 发明授权

US06518159B1 Semiconductor laser device and a method for fabricating the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US06518159B1
公开(公告)日：2003-02-11
申请号：US09691060
申请日：2000-10-19
申请人： Atsuo Tsunoda
发明人： Atsuo Tsunoda
IPC分类号： H01L2100
CPC分类号： H01S5/2231 , H01S5/2201 , H01S5/3202 , H01S5/32325 , H01S2301/173
摘要： An object of the present invention is provide an InGaAlP-based semiconductor layer of a good crystal quality at a higher temperature up to a re-evaporating temperature by MBE process. A buffer layer made of GaAs and a buffer layer made of GaInP are formed by MBE (molecular beam epitaxy) process on a GaAs substrate having a facet, which is to be a main facet, inclined by &thgr; in [011] direction from (100) facet. Then semiconductor layers are formed by MBE process so as to include cladding layers having a bandgap Egc and an AlGaInP active layer having a bandgap Ega which is adjusted by an amount of III-group element to be represented by Ega
摘要翻译：本发明的目的是提供一种在通过MBE工艺达到再蒸发温度的较高温度下具有良好晶体质量的InGaAlP基半导体层。由GaAs制成的缓冲层和由GaInP制成的缓冲层通过在具有小面的GaAs衬底上通过MBE（分子束外延）工艺形成，该面为主面，在[011]方向上从（100））面。然后，通过MBE工艺形成半导体层，以便包括具有带隙Egc和AlGaInP活性层的包覆层，该层具有带隙Ega，该带隙Ega被以由Ega

22. 发明授权

US5255279A Semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device 失效
标题翻译：半导体激光器件以及包括半导体激光器件的化合物半导体器件的制造方法
公开(公告)号：US5255279A
公开(公告)日：1993-10-19
申请号：US698001
申请日：1991-05-09
申请人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
发明人： Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Takahiro Suyama , Sadayoshi Matsui
IPC分类号： H01L21/20 , H01L21/205 , H01L31/105 , H01L31/18 , H01L33/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32325 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02505 , H01L21/02546 , H01L21/02631 , H01L21/02658 , H01L31/105 , H01L31/1844 , H01L33/0062 , H01S5/2231 , H01S2304/02 , H01S5/0421 , H01S5/209 , H01S5/3211 , Y02E10/544 , Y02P70/521 , Y10S148/095
摘要： On a GaAs substrate (Al.sub.Y Ga.sub.1-Y).sub.0.5 In.sub.0.5 P crystal layers (0.ltoreq.Y.ltoreq.1) is formed to be lattice-matched with the substrate. By radiating As molecular beams on the surface of the crystal layers while heating the layered substrate to a temperature at which In in the crystal layers evaporates, the portion near the surface of the crystal layers is changed into an Al.sub.Y Ga.sub.1-Y As crystal layer (0.ltoreq.Y.ltoreq.1) of a thickness of several molecules, on which layer an Al.sub.X Ga.sub.1-X As crystal layer (0.ltoreq.X.ltoreq.1) is formed. Since the surface of the Al.sub.Y Ga.sub.1-Y As crystal layer has been purified, the formed Al.sub.X Ga.sub.1-X As crystal layer has a high crystallinity, allowing production of a light emitting diode, a semiconductor laser device and the like with high efficiency.

23. 发明授权

US4316665A Projection device 失效
标题翻译：投影设备
公开(公告)号：US4316665A
公开(公告)日：1982-02-23
申请号：US100858
申请日：1979-12-06
申请人： Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui , Koyo Midorikawa , Atsuo Tsunoda , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki
发明人： Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui , Koyo Midorikawa , Atsuo Tsunoda , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki
IPC分类号： G02B3/00 , G03B27/52 , G03B27/00
CPC分类号： G02B3/0056 , G02B3/0062 , G03B27/525
摘要： In a slit exposure type copying machine, a projection device basically includes transmission type element lens systems each including a lens having a great length in the direction of the optic axis thereof as compared with the effective diameter thereof. A part area of an original is projected upon a predetermined part area on an image plane and the light intensity distribution of the projected part area has a predetermined central area controlled by lens aperture eclipse and extending diametrically from at least the optic axis and a marginal area lying outwardly of the central area and weak in light intensity. A plurality of such element lens systems are substantially equidistantly arranged in the lengthwise direction of the slit in a plane perpendicular to the optic axis so that the marginal areas in at least the element lens systems are superposed upon one another. Further, the element lens systems are arranged in a plurality of rows so that each row is positioned just intermediate the adjacent row, whereby even if there is an error in the arrangement interval of the element lens systems, the uniformity, in the slit area, of the exposure amount time-integrated in the original scanning direction is maintained.
摘要翻译：在狭缝曝光型复印机中，投影装置基本上包括透射型元件透镜系统，每个透镜式元件透镜系统都包括与其有效直径相比在其光轴方向上具有大长度的透镜。原稿的部分区域投影在图像平面上的预定部分区域上，并且投影部分区域的光强度分布具有由透镜孔径限制控制的预定中心区域，并且至少从光轴和边缘区域直径延伸位于中心区域外面，光线强弱。多个这样的元件透镜系统在垂直于光轴的平面中在狭缝的纵向方向上基本上等距地布置，使得至少元件透镜系统中的边缘区域彼此重叠。此外，元件透镜系统布置成多行，使得每行位于相邻行的正中间，由此即使元件透镜系统的布置间隔中存在误差，在狭缝区域中的均匀性，维持在原始扫描方向上积分的曝光量。

24. 发明授权

US4275962A Projection device 失效
标题翻译：投影设备
公开(公告)号：US4275962A
公开(公告)日：1981-06-30
申请号：US105789
申请日：1979-12-20
申请人： Koyo Midorikawa , Atsuo Tsunoda , Hidetoshi Murase , Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui , Masazumi Moriwaki , Mikio Suzuta
发明人： Koyo Midorikawa , Atsuo Tsunoda , Hidetoshi Murase , Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui , Masazumi Moriwaki , Mikio Suzuta
IPC分类号： G02B3/00 , G02B13/24 , G03B27/52 , G03G15/04 , G03B27/00
CPC分类号： G02B3/0062 , G02B13/24 , G02B3/0075 , G03B27/525 , G03G15/0409 , G02B3/0087
摘要： This specification discloses a compact projection device in which lens systems extending in the direction of the optic axis for projecting a part area of an object upon a predetermined part area on an image plane (hereinafter referred to as element lens systems) are initially set by a lens holding member having groove portions or hole portions extending in the direction of the optic axis, the distributions of intensity of light of the element lens systems on the image plane are controlled by an aperture eclipse such that the intensity of light is weaker in the marginal area than at least in the central area, a plurality of such element lens systems are arranged in a predetermined direction in a plane perpendicular to the optic axis and the distributions of intensity of light of the element lens systems are suitably superposed upon one another at least in the marginal area to provide uniformity of the distribution of the exposure amount integrated in the scanning direction with respect to the lengthwise direction of the slit of a copying machine of the slit exposure type. The element lens system each comprises two bar lenses each having a great length in the direction of the optic axis thereof as compared with the effective diameter thereof, and an intermediate image is once formed between the bar lenses and finally, a one-to-one magnification image is provided. The element lens systems are arranged in more than two rows in a honeycomb-like fashion such that the element lens systems of each row are positioned intermediate the element lens systems of the other row as viewed in the direction of the optic axis, whereby the uniformity of the distribution of the exposure amount integrated in the scanning direction with respect to the lengthwise direction of the slit is improved.
摘要翻译：本说明书公开了一种紧凑的投影装置，其中在光轴方向上延伸的透镜系统用于将物体的一部分区域投影在图像平面上的预定部分区域（以下称为元件透镜系统）上，最初由透镜保持构件具有沿光轴方向延伸的凹槽部分或孔部分，像面上的元件透镜系统的光强度分布由孔径日食控制，使得光的强度在边缘较弱区域至少在中心区域中，多个这样的元件透镜系统在垂直于光轴的平面中沿预定方向布置，并且元件透镜系统的光强度的分布至少适当地叠加在彼此上在边缘区域中以提供在扫描方向上集成的曝光量的分布的均匀性沿狭缝曝光型的复印机的狭缝的长度方向。元件透镜系统各自包括两个条形透镜，每个透镜在其光轴的方向上与其有效直径相比具有大的长度，并且在条形透镜之间一度形成中间图像，最后是一对一提供放大图像。元件透镜系统以蜂窝状方式布置成两行以上，使得每行的元件透镜系统位于沿着光轴方向观察的另一排的元件透镜系统的中间，由此均匀性提高了相对于狭缝的长度方向在扫描方向上积分的曝光量的分布。

25. 发明授权

US5310697A Method for fabricating an AlGaInP semiconductor light emitting device including the step of removing an oxide film by irradiation with plasma beams and an As or P molecular beam 失效
标题翻译：一种制造AlGaInP半导体发光器件的方法，包括通过等离子体束的照射和As或P分子束的去除氧化膜的步骤
公开(公告)号：US5310697A
公开(公告)日：1994-05-10
申请号：US993058
申请日：1992-12-18
申请人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani
发明人： Yasuo Kan , Kosei Takahashi , Masahiro Hosoda , Atsuo Tsunoda , Kentaro Tani
IPC分类号： H01L21/302 , H01L21/3065 , H01S5/00 , H01S5/042 , H01S5/223 , H01S5/323 , H01L21/20
CPC分类号： H01S5/32325 , H01L33/0062 , H01S5/2231 , Y10S148/017 , Y10S438/974
摘要： A method for fabricating an AlGaInP semiconductor light emitting device having a substrate and a multilayer structure including an AlGaInP first semiconductor layer formed on the substrate. The method comprises the steps of removing part of the multilayer structure so that the first semiconductor layer is exposed, irradiating with plasma beams an oxide film formed on the exposed first semiconductor layer with the substrate temperature being kept at 500.degree. C. or less, so as to remove the oxide film from the first semiconductor layer and growing a second semiconductor layer on the first semiconductor layer.
摘要翻译：一种制造具有衬底的AlGaInP半导体发光器件的方法和包括在衬底上形成的AlGaInP第一半导体层的多层结构。该方法包括以下步骤：去除部分多层结构，使得第一半导体层被暴露，用等离子体束照射形成在暴露的第一半导体层上的氧化膜，衬底温度保持在500℃或更低，因此从第一半导体层去除氧化膜并在第一半导体层上生长第二半导体层。

26. 发明授权

US4426132A Projecting device 失效
标题翻译：投影设备
公开(公告)号：US4426132A
公开(公告)日：1984-01-17
申请号：US500804
申请日：1983-06-07
申请人： Atsuo Tsunoda , Koyo Midorikawa , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki , Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui
发明人： Atsuo Tsunoda , Koyo Midorikawa , Hidetoshi Murase , Mikio Suzuta , Masazumi Moriwaki , Noritaka Mochizuki , Setsuo Minami , Yoshiya Matsui
IPC分类号： G03B27/50 , G02B3/00 , G02B7/00 , G02B27/18 , G03B27/52
CPC分类号： G02B3/0062 , G03B27/525 , G02B3/0012 , G02B3/0056 , G02B3/0068
摘要： A projecting device is disclosed which has plural element lens systems arranged in at least two rows in a staggered fashion in two grooved blocks, with one row displaced relative to the adjacent row by a distance equal to half the pitch of the adjacent row. Each lens system is composed of at least one bar lens for imaging a part of the object as a part of the corresponding image. An opaque elastomer material fills the space between the rows for preventing light from entering into the space while allowing the positional relation between the rows to be fine-adjusted.
摘要翻译：公开了一种投影装置，其具有多个元件透镜系统，其以交错的方式布置在至少两行中的两个凹槽块中，一行相对于相邻行移位等于相邻行的间距的一半的距离。每个透镜系统由至少一个条形透镜组成，用于将物体的一部分成像为相应图像的一部分。不透明的弹性体材料填充行之间的空间，以防止光进入空间，同时允许行之间的位置关系被微调。

27. 发明授权

US4368975A Projection device 失效
标题翻译：投影设备
公开(公告)号：US4368975A
公开(公告)日：1983-01-18
申请号：US240835
申请日：1981-03-05
申请人： Yoshiya Matsui , Setsuo Minami , Noritaka Mochizuki , Isao Harumoto , Atsuo Tsunoda , Shiro Hirai , Masami Ohkubo
发明人： Yoshiya Matsui , Setsuo Minami , Noritaka Mochizuki , Isao Harumoto , Atsuo Tsunoda , Shiro Hirai , Masami Ohkubo
IPC分类号： G03B27/50 , G02B3/00 , G02B13/22 , G02B13/24 , G02B27/18 , G03G15/04 , G03G15/047 , G03B27/48
CPC分类号： G02B13/24 , G02B13/22 , G02B3/00
摘要： This specification discloses a projection device in which a plurality of element lens systems for projecting a part area of an object onto a predetermined part area on the image plane at erect one-to-one magnification are arranged parallel to one another in a plane perpendicular to the optical axis. Each element lens system is a telecentric system comprising three thin lenses of the same shape arranged in the direction of the optical axis, and an intermediate lens is provided at a position deviated from the intermediate point between the object side lens and the image plane side lens. A light absorbing member for extinguishing any light rays exceeding the effective lens diameter is provided between the lenses, and the light intensity distribution on the image plane of each element lens system is controlled substantially to Gauss distribution form by aperture eclipse and, even if there is any error in the arrangement interval, the exposure amount distribution in the arrangement direction superposed on the image plane is uniform.
摘要翻译：本说明书公开了一种投影装置，其中用于将物体的一部分区域以直立的一对一放大率在像面上的预定部分区域投影的多个元件透镜系统在垂直于...的平面中彼此平行地布置光轴。每个元件透镜系统是一种远心系统，包括沿光轴方向布置的相同形状的三个薄透镜，并且在偏离物侧透镜和像平面侧透镜之间的中间点的位置处设置中间透镜。在透镜之间设置用于熄灭超过有效透镜直径的光线的光吸收部件，并且每个元件透镜系统的像面上的光强度分布基本上由孔眼日蚀控制为高斯分布形式，并且即使存在布置间隔中的任何误差，叠加在图像平面上的排列方向上的曝光量分布是均匀的。

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