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    • 24. 发明授权
    • In Situ getter pump system and method
    • 原位吸气泵系统及方法
    • US5993165A
    • 1999-11-30
    • US810619
    • 1997-02-28
    • D'arcy H. LorimerGordon P. Krueger
    • D'arcy H. LorimerGordon P. Krueger
    • C23C14/54C23C14/56F04B37/02F04B37/08F04B37/16H01L21/02H01L21/20
    • C23C14/564C23C14/54C23C14/56F04B37/02F04B37/08
    • A wafer processing system including a processing chamber, a low pressure pump coupled to the processing chamber for pumping noble and non-noble gases, a valve mechanism coupling a source of noble gas to the processing chamber, an in situ getter pump disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber, and a processing mechanism for processing a wafer disposed within the processing chamber. Preferably, the in situ getter pump can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer is used to automatically control the temperature of the getter pump to control the species of gasses that are pumped from the chamber. A method for processing a wafer of the present invention includes the steps of placing a wafer within a processing chamber and sealing the chamber, flowing a noble gas into the chamber while simultaneously pumping the chamber with an external low pressure pump and with an in situ getter pump disposed within the chamber which pumps non-noble gases, and processing the wafer within the chamber while the noble gas continues to flow. The method also preferably includes the steps of monitoring the composition of the gas within the chamber and controlling the temperature of the getter material based upon the analysis of the composition.
    • 一种晶片处理系统,包括处理室,耦合到处理室的用于泵送贵重和非惰性气体的低压泵,将惰性气体源连接到处理室的阀机构,设置在处理中的原位吸气泵 在惰性气体流入室期间泵送某些非惰性气体的腔室,以及用于处理设置在处理室内的晶片的处理机构。 优选地,原位吸气泵可以在多个不同温度下操作,以在这些温度下优先泵送不同种类的气体。 气体分析仪用于自动控制吸气泵的温度,以控制从腔室泵送的气体种类。 本发明的晶片处理方法包括以下步骤:将晶片放置在处理室内并密封该腔室,将惰性气体流入腔室,同时用外部低压泵泵送腔室,并使用原位吸气剂 设置在室内的泵,其泵送非惰性气体,并且在惰性气体继续流动的同时处理室内的晶片。 该方法还优选包括以下步骤:基于组合物的分析来监测室内气体的组成并控制吸气剂材料的温度。
    • 25. 发明授权
    • In situ getter pump system and method
    • 原位吸气泵系统及方法
    • US5879134A
    • 1999-03-09
    • US807957
    • 1997-02-28
    • D'Arcy H. LorimerGordon P. Krueger
    • D'Arcy H. LorimerGordon P. Krueger
    • C23C14/54C23C14/56F04B37/02F04B37/08F04B37/16H01L21/02H01L21/20
    • C23C14/564C23C14/54C23C14/56F04B37/02F04B37/08
    • A wafer processing system including a processing chamber, a low pressure pump coupled to the processing chamber for pumping noble and non-noble gases, a valve mechanism coupling a source of noble gas to the processing chamber, an in situ getter pump disposed within the processing chamber which pumps certain non-noble gases during the flow of the noble gas into the chamber, and a processing mechanism for processing a wafer disposed within the processing chamber. Preferably, the in situ getter pump can be operated at a number of different temperatures to preferentially pump different species of gas at those temperatures. A gas analyzer is used to automatically control the temperature of the getter pump to control the species of gasses that are pumped from the chamber. A method for processing a wafer of the present invention includes the steps of placing a wafer within a processing chamber and sealing the chamber, flowing a noble gas into the chamber while simultaneously pumping the chamber with an external low pressure pump and with an in situ getter pump disposed within the chamber which pumps non-noble gases, and processing the wafer within the chamber while the noble gas continues to flow. The method also preferably includes the steps of monitoring the composition of the gas within the chamber and controlling the temperature of the getter material based upon the analysis of the composition.
    • 一种晶片处理系统,包括处理室,耦合到处理室的用于泵送贵重和非惰性气体的低压泵,将惰性气体源连接到处理室的阀机构,设置在处理中的原位吸气泵 在惰性气体流入室期间泵送某些非惰性气体的腔室,以及用于处理设置在处理室内的晶片的处理机构。 优选地,原位吸气泵可以在多个不同温度下操作,以在这些温度下优先泵送不同种类的气体。 气体分析仪用于自动控制吸气泵的温度,以控制从腔室泵送的气体种类。 本发明的晶片处理方法包括以下步骤:将晶片放置在处理室内并密封该腔室,将惰性气体流入腔室,同时用外部低压泵泵送腔室,并使用原位吸气剂 设置在室内的泵,其泵送非惰性气体,并且在惰性气体继续流动的同时处理室内的晶片。 该方法还优选包括以下步骤:基于组合物的分析来监测室内气体的组成并控制吸气剂材料的温度。