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    • 27. 发明授权
    • Method for growing an adherent diamond layer atop an interlayer bonded to a compound semiconductor substrate
    • 在粘合到化合物半导体衬底上的层间生长粘附金刚石层的方法
    • US07939367B1
    • 2011-05-10
    • US12338783
    • 2008-12-18
    • Firooz Nasser-FailiNiels Christopher Engdahl
    • Firooz Nasser-FailiNiels Christopher Engdahl
    • H01L21/00
    • H01L21/3146H01L21/02115H01L21/02274H01L21/02304
    • The invention is a method for growing a critical adherent diamond layer on a substrate by Chemical Vapor Deposition (CVD) and the article produced by the method. The substrate can be a compound semiconductor coated with an adhesion layer. The adhesion layer is preferably a dielectric, such as silicon nitride, silicon carbide, aluminum nitride or amorphous silicon, to name some primary examples. The typical thickness of the adhesion layer is one micrometer or less. The resulting stack of layers, (e.g. substrate layer, adhesion layer and diamond layer) is structurally free of plastic deformation and the diamond layer is well adherent to the dielectric adhesion layer such that it can be processed further, such as by increasing the thickness of the diamond layer to a desired level, or by subjecting it to additional thin film fabrication process steps. In addition to preventing plastic deformation of the layer stack, the process also reduces the formation of soot during the CVD process. The reduction of soot allows for better adhesion between the adhesion layer and diamond layer of the layer stack.
    • 本发明是通过化学气相沉积(CVD)和通过该方法制备的制品在衬底上生长关键粘附金刚石层的方法。 衬底可以是涂覆有粘合层的化合物半导体。 粘附层优选为诸如氮化硅,碳化硅,氮化铝或非晶硅的电介质,以列举一些主要实例。 粘合层的典型厚度为1微米或更小。 所得到的层叠层(例如,基底层,粘合层和金刚石层)在结构上没有塑性变形,并且金刚石层与电介质粘合层良好粘附,使得其可进一步加工,例如通过增加厚度 金刚石层到所需的水平,或者通过使其进一步的薄膜制造工艺步骤。 除了防止层叠体的塑性变形之外,该过程还减少了CVD工艺期间烟灰的形成。 烟灰的减少允许粘附层和层叠层的金刚石层之间的更好的粘附。
    • 30. 发明授权
    • High thermal-conductivity diamond-coated fiber articles
    • 高导热性金刚石涂层纤维制品
    • US5277975A
    • 1994-01-11
    • US954358
    • 1992-09-30
    • John A. HerbJohn M. PinneoClayton F. Gardinier
    • John A. HerbJohn M. PinneoClayton F. Gardinier
    • C01B31/06C23C16/04C23C16/27B32B9/00
    • C23C16/274C01B31/065C04B30/02C04B35/52C04B35/64C04B38/0038C23C16/045C23C16/27C04B2235/427C04B2235/667Y10T428/249955Y10T428/249956Y10T428/249957Y10T428/249967Y10T428/24997Y10T428/24999Y10T428/2938Y10T428/2991Y10T428/30
    • The present invention comprises an article formed for a plurality of diamond-coated fibers preformed into a desired shape. Each of the fibers has first surface regions in contact with immediately adjacent other ones of the fibers, and second surface regions spaced apart from the immediately adjacent other ones of said fibers to define boundaries of inter-fiber voids between the immediately adjacent ones of the fibers. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the fibers and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the fibers into the inter-particle voids. The high thermal conductivity CVD diamond material has an average crystallite size greater than about 15 microns, an intensity ratio of diamond-Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The thermal conductivity of the CVD diamond material is in excess of 17 Wcm.sup.-1 K.sup.-1.
    • 本发明包括形成用于预成形为所需形状的多个金刚石涂层纤维的制品。 每个纤维具有与直接相邻的另一个纤维接触的第一表面区域和与紧邻的另一个纤维间隔开的第二表面区域,以限定紧邻的纤维之间的纤维间空隙的边界 。 空隙通过高导热性CVD金刚石材料渗透,连续地涂覆纤维的第二表面区域,并且包括从单独紧邻的纤维的第二表面区域到颗粒间空隙的合并生长前沿。 高导热性CVD金刚石材料具有大于约15微米的平均微晶尺寸,金刚石 - 拉曼峰 - 光致发光背景强度的强度比大于约20,金刚石拉曼峰的最大强度(以计数/秒计) 除了大于约3的1270cm-1处的光致发光强度,小于约6cm -1的拉曼sp3全宽半最大值和大于约25的金刚石 - 石墨拉曼比。CVD的热导率 金刚石材料超过17 Wcm-1K-1。