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    • 24. 发明授权
    • Chain inorganic oxide fine particle groups
    • 链无机氧化物微粒组
    • US07309457B2
    • 2007-12-18
    • US10981845
    • 2004-11-05
    • Ryo MuraguchiMasayuki MatsudaHiroyasu NishidaToshiharu HiraiMitsuaki Kumazawa
    • Ryo MuraguchiMasayuki MatsudaHiroyasu NishidaToshiharu HiraiMitsuaki Kumazawa
    • H01B1/00H01B1/02H01B1/08
    • C01G30/005B82Y30/00C01B33/146C01F7/02C01P2004/62C01P2004/64C01P2006/40H01C17/06533
    • A chain antimony oxide fine particle group comprising antimony oxide fine particles which have an average particle diameter of 5 to 50 nm, are connected in the form of a chain and have an average connection number of 2 to 30 and preferably used for forming a hard coating film. The fine particle group can be prepared by a process comprising treating an alkali antimonate aqueous solution with a cation exchange resin to prepare an antimonic acid (gel) dispersion and then treating the dispersion with an anion exchange resin and/or adding a base to the dispersion. Also provided is a substrate with a film comprising a substrate and a hard coating film. The hard coating film includes a chain inorganic oxide fine particle group, in which inorganic oxide fine particles of 2 to 30 on the average are connected in the form of a chain, and a matrix. The inorganic oxide particles may be silica particles, silica-alumina particles being preferable, and porous particles and/or hollow particles having a cavity inside being more preferable.
    • 包含平均粒径为5〜50nm的氧化锑微粒的链状氧化锑微粒组以链状连接,平均连接数为2〜30,优选用于形成硬涂层 电影。 微粒子组可以通过以下方法制备,该方法包括用阳离子交换树脂处理碱式锑酸盐水溶液以制备锑酸(凝胶)分散体,然后用阴离子交换树脂处理分散体和/或向分散体中加入碱 。 还提供了具有包括基底和硬涂膜的薄膜的基底。 硬涂膜包括链状无机氧化物细粒子群,其中平均形式为2至30的无机氧化物细颗粒以链的形式连接,并且基质。 无机氧化物颗粒可以是二氧化硅颗粒,二氧化硅 - 氧化铝颗粒是优选的,并且更优选具有内部空腔的多孔颗粒和/或中空颗粒。
    • 29. 发明申请
    • Photoelectric cell and process for producing metal oxide semiconductor film for use in photoelectric cell
    • US20030150485A1
    • 2003-08-14
    • US10361079
    • 2003-02-06
    • Catalysts & Chemicals Industries Co., LTD.
    • Tsuguo KoyanagiMichio KomatsuHirokazu TanakaKatsuhiro Shirono
    • H01L031/04
    • B82Y30/00C01P2004/61C01P2004/62C01P2004/64C01P2004/84C09C1/3054H01G9/2004H01G9/2031Y02E10/542Y02P70/521
    • The first photoelectric cell of the present invention comprises: an insulating base having on its surface an electrode layer (1), the electrode layer (1) having on its surface a metal oxide semiconductor film (2) on which a photosensitizer is adsorbed; an insulating base having on its surface an electrode layer (3), the electrode layer (1) and the electrode layer (3) arranged opposite to each other; and an electrolyte sealed between the metal oxide semiconductor film (2) and the electrode layer (3), wherein at least one of the electrode-having insulating bases is transparent; and the metal oxide semiconductor film (2) comprises anatase titanium oxide particles. This first photoelectric cell includes a semiconductor film comprising anatase titanium oxide particles, having a high proportion of photosensitizer adsorbed, so that the electron mobility in the semiconductor film is high to thereby realize excellent photoelectric transfer efficiency. The second photoelectric cell of the present invention comprises: an insulating base having on its surface an electrode layer (1), the electrode layer (1) having on its surface a metal oxide semiconductor layer (2) on which a photosensitizer is adsorbed; an insulating base having on its surface an electrode layer (3), the electrode layer (1) and the electrode layer (3) arranged opposite to each other; and an electrolyte sealed between the metal oxide semiconductor layer (2) and the electrode layer (3), wherein conductive protrusions (4) jutting from the surface of the electrode layer (1) exist, the metal oxide semiconductor layer (2) formed so as to cover the conductive protrusions (4) and the electrode layer (1), and at least one of the electrode-layer-having insulating bases is transparent. In this second photoelectric cell, conductive protrusions are provided on the electrode surface, so that generated electrons not only can rapidly move toward the electrode but also are free from recombining with the photosensitizer. Moreover, in this photoelectric cell, not only is the adsorption proportion of photosensitizer high but also the moving of generated electrons is smooth. Therefore, the second photoelectric cell exhibits excellent photoelectric transfer efficiency.
    • 30. 发明申请
    • Silica particles for polishing and a polishing agent
    • 用于抛光的二氧化硅颗粒和抛光剂
    • US20030089045A1
    • 2003-05-15
    • US10291643
    • 2002-11-12
    • CATALYSTS & CHEMICALS INDUSTRIES CO., LTD.
    • Kazuhiro NakayamaAkira NakashimaMichio Komatsu
    • C09C001/68C09K003/14
    • B82Y30/00C01P2004/62C01P2004/64C01P2004/80C01P2006/90C09C1/3081C09K3/1409
    • Silica particles for polishing to planarize a surface of a substrate without generating scratches, having the average particle diameter in the range from 5 to 300 nm, carbon content in the range from 0.5 to 5 weight %, and 10%-compressive elasticity modulus in the range from 500 to 3000 kgf/mm2. When the carbon content in the silica particles is less than 0.5 weight %, there is no residual alkoxy group and siloxane bonding proceeds, so that the obtained particles are hard. In that case, although the polishing rate is high, scratches remain or are generated anew after polishing, and planarity of the polished surface is insufficient. On the other hand, when the carbon content is over 5 weight %, many residual alkoxy group are contained in the particles, so that the particles are relatively soft and a sufficient polishing rate can not be achieved.
    • 用于抛光以平面化基材表面的二氧化硅颗粒,而不产生刮痕,其平均粒径在5至300nm的范围内,碳含量在0.5至5重量%的范围内,并且10%的压缩弹性模量在 范围从500至3000 kgf / mm2。 当二氧化硅颗粒中的碳含量小于0.5重量%时,不存在残留的烷氧基并进行硅氧烷键合,所以得到的颗粒是硬的。 在这种情况下,虽然抛光速度高,但抛光后残留或重新产生划痕,抛光面的平面度不足。 另一方面,当碳含量超过5重量%时,颗粒中含有许多残留的烷氧基,使得颗粒相对较软并且不能获得足够的抛光速率。