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21. 发明授权

US08432228B1 Power control circuit for radio frequency power amplifiers 有权
标题翻译：射频功率放大器功率控制电路
公开(公告)号：US08432228B1
公开(公告)日：2013-04-30
申请号：US13182693
申请日：2011-07-14
申请人： Adam Joseph Dolin
发明人： Adam Joseph Dolin
IPC分类号： H03F3/04
CPC分类号： H03F1/0266 , H03F3/189 , H03F3/245 , H03F2200/555
摘要： A power control circuit for regulating an output voltage applied to a radio frequency power amplifier. The power control circuit includes an amplifier, a pass transistor and one or more saturation detectors. An input ramp voltage having a magnitude equal to a first voltage level is applied to a negative terminal of the amplifier. The pass transistor provides an output voltage at a drain terminal of the pass transistor. The saturation detector detects a magnitude of a voltage at a gate terminal of the pass transistor and generates a control current based on the magnitude of the voltage at the gate terminal of the pass transistor. The voltage regulating circuit reduces the magnitude of the input ramp voltage from the first voltage level to a third voltage level based on the control current.
摘要翻译：一种用于调节施加到射频功率放大器的输出电压的功率控制电路。功率控制电路包括放大器，传输晶体管和一个或多个饱和检测器。具有等于第一电压电平的幅度的输入斜坡电压被施加到放大器的负极端子。传输晶体管在传输晶体管的漏极端提供输出电压。饱和检测器检测通过晶体管的栅极端子处的电压的大小，并且基于通过晶体管的栅极端子处的电压的大小产生控制电流。电压调节电路基于控制电流将输入斜坡电压的幅度从第一电压电平降低到第三电压电平。

22. 发明申请

US20070093228A1 Method and system for image rejection by using post mixer I/Q equalization 有权
标题翻译：使用后混合器I / Q均衡的图像抑制方法和系统
公开(公告)号：US20070093228A1
公开(公告)日：2007-04-26
申请号：US11254386
申请日：2005-10-20
申请人： John Bayruns
发明人： John Bayruns
IPC分类号： H04B1/18 , H04B1/26
CPC分类号： H04B1/28 , H04L27/3818
摘要： The invention provides a system and method for tuning broadband signals by using post mixer I/Q equalization. An Image Rejection Mixer (IRM) is used for mixing Radio Frequency (RF) signals and rejecting image signals from the desired RF signals. The IRM includes an I/Q mixer and a filter. The I and Q paths resulting from the mixing operation in the I/Q mixer are equalized in amplitude and phase by an I/Q equalizer. Thereafter, the image signals are rejected from the desired RF signals using the filter.
摘要翻译：本发明提供一种通过使用后混频器I / Q均衡来调谐宽带信号的系统和方法。图像抑制混频器（IRM）用于混合射频（RF）信号，并从所需的RF信号中排除图像信号。 IRM包括I / Q混频器和滤波器。在I / Q混频器中由混合操作产生的I和Q路径在I / Q均衡器的幅度和相位上相等。此后，使用滤波器从所需的RF信号中拒绝图像信号。

23. 发明授权

US06853526B1 Transient overvoltage protection circuit 有权
标题翻译：瞬态过电压保护电路
公开(公告)号：US06853526B1
公开(公告)日：2005-02-08
申请号：US09668181
申请日：2000-09-22
申请人： John van Saders , Douglas M. Johnson
发明人： John van Saders , Douglas M. Johnson
IPC分类号： H01L27/02 , H02H9/00 , H02H3/22
CPC分类号： H02H9/005 , H01L27/0251
摘要： A circuit and method are disclosed for protecting an integrated circuit (IC) against transient overvoltages. The circuit comprises a balun transformer and a normally-off transistor. The balun input terminals are connected to an unbalanced circuit, while the balun output terminals are connected to a balanced circuit. The transistor is connected between the balun output terminals and has a gate connected to ground or to some other reference voltage. When an overvoltage transient signal reaches the balun input terminals, the balun transformer converts the transient to a balanced transient signal on the two branches of the balanced circuit. During overvoltage conditions, one balun output terminal will have a voltage which swings low enough that the protection transistor turns on, effectively shorting the overvoltage spike and protecting any upstream (or downstream) IC components from damage. When the transient is over, the transistor returns to the “off” state.
摘要翻译：公开了用于保护集成电路（IC）免于瞬时过电压的电路和方法。该电路包括平衡不平衡变压器和常闭晶体管。平衡 - 不平衡转换器输入端子连接到不平衡电路，而平衡 - 不平衡变换器输出端子连接到平衡电路。晶体管连接在平衡 - 不平衡转换器输出端子之间，并具有连接到地或与其它参考电压相连的栅极。当过压瞬态信号到达平衡 - 不平衡变压器输入端子时，平衡 - 不平衡转换器将瞬变转换为平衡电路两个分支上的平衡瞬态信号。在过电压条件下，一个平衡 - 不平衡转换器的输出端子的电压将摆动得足够低，以保护晶体管导通，有效地短路过电压尖峰并保护任何上游（或下游）IC组件免受损坏。当瞬变结束时，晶体管返回到“关闭”状态。

24. 发明申请

US20040130436A1 Laser-trimmable digital resistor 审中-公开
标题翻译：激光可调数字电阻
公开(公告)号：US20040130436A1
公开(公告)日：2004-07-08
申请号：US10737441
申请日：2003-12-15
申请人： Anadigics, Inc.
发明人： Mark Steven Wilbur , Sheo Kumar Khetan
IPC分类号： H01C010/00
CPC分类号： H01L28/24 , H01C17/242 , H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A laser system and method for cleanly trimming or severing resistive links fabricated on an undoped gallium arsenide substrate without damaging or affecting adjacent circuit structures or the underlying or surrounding substrate is disclosed. The system comprises a laser source adapted to generate an output at a wavelength within the range of 0.9 to 1.5 nullm, a resistive film structure formed on an undoped gallium arsenide substrate, and a beam positioner and alignment system to align the laser source with the target structure. The method comprises generating a laser output at a wavelength in a range of about 0.9 to 1.5 nullm and directing the laser output to illuminate a resistive thin-film structure fabricated on a gallium arsenide substrate. The resistive film structure comprises a first layer of protective dielectric and a layer of resistive thin-film material. Preferably, a second layer of protective dielectric lies upon the layer of resistive thin-film material. Further, there is disclosed a resistive trim network suitable for use with a bias circuit for a power amplifier that requires a quiescent current of 130 mA. The trim network comprises eleven thin-film resistors arranged in an asymmetrical array of series resistors, parallel resistors, and tying resistors.
摘要翻译：公开了一种激光系统和方法，用于在不损坏或影响相邻电路结构或底层或周围衬底的情况下，对未掺杂的砷化镓衬底上制造的电阻链路进行干净修剪或切断。该系统包括适于产生在0.9至1.5μm范围内的波长的输出的激光源，形成在未掺杂的砷化镓衬底上的电阻膜结构，以及将激光源与靶对准的光束定位器和对准系统结构体。该方法包括产生在约0.9至1.5μm范围内的波长的激光输出，并引导激光输出以照亮在砷化镓衬底上制造的电阻薄膜结构。电阻膜结构包括第一层保护电介质和一层电阻薄膜材料。优选地，第二层保护电介质位于电阻薄膜材料层上。此外，公开了一种适用于要求静态电流为130mA的功率放大器的偏置电路的电阻调整网络。修剪网络包括以串联电阻器，并联电阻器和绑定电阻器的不对称阵列布置的十一个薄膜电阻器。

25. 发明授权

US5748049A Multi-frequency local oscillators 失效
标题翻译：多频本地振荡器
公开(公告)号：US5748049A
公开(公告)日：1998-05-05
申请号：US344753
申请日：1994-11-23
申请人： John Thomas Bayruns , Raymond Mitchell Waugh , Phillip W. Wallace , Robert J. Bayruns , Thomas D. DeNigris
发明人： John Thomas Bayruns , Raymond Mitchell Waugh , Phillip W. Wallace , Robert J. Bayruns , Thomas D. DeNigris
IPC分类号： H03B1/00 , H03B5/18 , H03B25/00 , H03J5/24 , H04B1/28 , H03B5/00 , H04B1/26
CPC分类号： H03J5/24 , H03B5/1876 , H04B1/28 , H03B2201/0275 , H03B25/00
摘要： A multiple-frequency local oscillator for providing an LO signal at one of a multiple of predetermined resonant frequencies associated with a number of resonators is disclosed. It includes a number of LO input ports for coupling to a plurality of resonators, respectively, each resonator having a predetermined resonant frequency; the local oscillator is controlled to selectively provide at its LO output port an output LO signal at any one of the resonant frequencies.
摘要翻译：公开了一种用于以与多个谐振器相关联的多个预定谐振频率中的一个提供LO信号的多频本地振荡器。它包括分别耦合到多个谐振器的多个LO输入端口，每个谐振器具有预定的谐振频率; 控制本地振荡器以在其LO输出端口选择性地在任何一个谐振频率处提供输出LO信号。

26. 发明授权

US5736913A Method and apparatus for providing grounding to microwave circuit by low impedance means 失效
标题翻译：用于通过低阻抗装置为微波电路提供接地的方法和装置
公开(公告)号：US5736913A
公开(公告)日：1998-04-07
申请号：US601499
申请日：1996-02-14
申请人： Kenneth S. Sanyigo , Raymond M. Waugh , John T. Bayruns
发明人： Kenneth S. Sanyigo , Raymond M. Waugh , John T. Bayruns
IPC分类号： H01P1/20 , H01P1/00
CPC分类号： H01P1/20 , H01L24/48 , H01L2223/6611 , H01L2224/48463 , H01L2924/00014 , H01L2924/14 , H01L2924/1423 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011
摘要： Low impedance means are provided for coupling a common circuit ground of a microwave circuit to the ground potential. The low impedance means include a plurality of resonators, each having a distinct resonant frequency at which it displays a minimum impedance. The resonant frequencies of the resonators are chosen and arranged such that the resonators together operate to provide a low impedance band in the frequency spectrum within which low impedance coupling between the common circuit ground and the ground potential is achieved. In a preferred embodiment, resonators include capacitors connected in series with inductive bonding wires, and different resonant frequencies are obtained by using capacitors with different capacitance.
摘要翻译：提供低阻抗装置用于将微波电路的公共电路接地耦合到地电位。低阻抗装置包括多个谐振器，每个谐振器具有显示最小阻抗的不同谐振频率。谐振器的谐振频率被选择和布置成使得谐振器一起操作以在其中实现公共电路接地和地电位之间的低阻抗耦合的频谱中提供低阻抗带。在优选实施例中，谐振器包括与感应接合线串联的电容器，并且通过使用具有不同电容的电容器获得不同的谐振频率。

27. 发明授权

US5428837A Method and apparatus for reducing local oscillator leakage in integrated circuit receivers 失效
标题翻译：用于减少集成电路接收器中本地振荡器泄漏的方法和装置
公开(公告)号：US5428837A
公开(公告)日：1995-06-27
申请号：US3897
申请日：1993-01-13
申请人： Robert J. Bayruns , Scott D. Sweeney , Osvaldo J. Lopez
发明人： Robert J. Bayruns , Scott D. Sweeney , Osvaldo J. Lopez
IPC分类号： G01S7/02 , H03B1/04 , H03B5/12 , H03D7/00 , H03K17/16 , H04B1/10 , H04B15/06
CPC分类号： H03K17/162 , H03B5/1203 , H03B5/1228 , H03B5/1243 , H03D7/00 , G01S7/021 , H03B2202/084 , H03B2202/088 , H03D2200/009
摘要： Technique for reducing local oscillator leakage in integrated frequency conversion circuits is disclosed, which provides coupling an external portion of a resonator circuit to the integrated frequency conversion circuit. The coupling is accomplished without using any of the DC power or ground pins of the conversion circuit. A frequency conversion circuit based on this technique includes resonator, oscillator, and mixer circuits. Part of the oscillator and mixer circuit is encapsulated in a package, whereas at least a portion of the resonator circuit is located outside the package. The outside portion of the resonator circuit connects to at least two external resonator pins of the package such that, during the operating of the conversion circuit, the net current entering the package via said external resonator pins is approximately zero.
摘要翻译：公开了用于减少集成频率转换电路中的本地振荡器泄漏的技术，其提供将谐振器电路的外部部分耦合到集成频率转换电路。在不使用转换电路的任何直流电源或接地引脚的情况下实现耦合。基于该技术的变频电路包括谐振器，振荡器和混频器电路。振荡器和混频器电路的一部分被封装在封装中，而谐振器电路的至少一部分位于封装外部。谐振器电路的外部部分连接到封装的至少两个外部谐振器引脚，使得在转换电路的操作期间，经由所述外部谐振器引脚进入封装的净电流近似为零。

28. 发明授权

US5138285A Method for reducing phase noise in oscillators 失效
标题翻译：降低振荡器相位噪声的方法
公开(公告)号：US5138285A
公开(公告)日：1992-08-11
申请号：US732984
申请日：1991-07-19
申请人： Ronald L. Michels
发明人： Ronald L. Michels
IPC分类号： H03B1/00 , H03B1/04 , H03B5/12
CPC分类号： H03B5/1228 , H03B5/1203 , H03B5/1243 , H03B2200/0006 , H03B2200/001 , H03B2200/0012 , H03B2200/004 , H03B2201/0208 , H03B2202/012 , H03B2202/05
摘要： A simple and broadly applicable method for reducing phase noise in varactor tuned voltage-controlled oscillators (VCOs) is described. In particular, it is shown that by appropriately selecting the inductance of a choke inductor used to isolate the varactor from its DC bias supply, this inductor will also perform a noise filtering function by shunting off part of the internally generated low frequency random electronic noise through the DC supply, thus reducing a primary contributor of oscillator phase noise. Versions of this phase noise reduction method appropriate for the Colpitts, Hartley, and Clapp type LC voltage-controlled oscillator topologies are illustrated.
摘要翻译：描述了一种用于降低变容二极管调谐压控振荡器（VCO）中的相位噪声的简单且广泛适用的方法。特别地，通过适当地选择用于将变容二极管与其直流偏置电源隔离的扼流圈的电感，该电感器还将通过分流部分内部产生的低频随机电子噪声来执行噪声滤波功能 DC电源，从而减少振荡器相位噪声的主要贡献者。示出了适用于Colpitts，Hartley和Clapp型LC压控振荡器拓扑的相位降噪方法的版本。

29. 发明授权

US09287700B1 Protection Circuit 有权
标题翻译：保护电路
公开(公告)号：US09287700B1
公开(公告)日：2016-03-15
申请号：US13910802
申请日：2013-06-05
申请人： Alan Brandstaedter
发明人： Robert Hickman , Alan Brandstaedter
IPC分类号： H02H9/04
CPC分类号： H02H9/044 , H02H9/046
摘要： A protection circuit for an electronic circuit. The protection circuit includes a first transistor, a second transistor, a base current path, and a current discharge path. The first transistor is connected to a first terminal of the electronic circuit. The second transistor is connected to a second terminal of the electronic circuit. The first transistor is connected to the second transistor forming the base current path. The current discharge path conducts a discharge current from the first terminal to the second terminal through the second transistor when the second transistor is turned on with a base current in the base current path.
摘要翻译：一种用于电子电路的保护电路。保护电路包括第一晶体管，第二晶体管，基极电流路径和电流放电路径。第一晶体管连接到电子电路的第一端。第二晶体管连接到电子电路的第二端子。第一晶体管连接到形成基极电流路径的第二晶体管。当第二晶体管在基极电流路径中以基极电流导通时，电流放电路径通过第二晶体管导通从第一端子到第二端子的放电电流。

30. 发明授权

US09099862B1 Self ESD protected device and method thereof 有权
标题翻译：自ESD保护装置及其方法
公开(公告)号：US09099862B1
公开(公告)日：2015-08-04
申请号：US13459621
申请日：2012-04-30
申请人： Kenneth Sean Ozard
发明人： Kenneth Sean Ozard
IPC分类号： H02H9/04 , H02H3/22
CPC分类号： H02H9/046 , H02H3/22 , H02H9/041
摘要： A self ESD protected RF transistor. The RF transistor is connected to a sub-circuit which causes the RF transistor to self-protect from ESD damage. The sub-circuit triggers the RF transistor to clamp a positive polarity ESD pulse to ground/emitter terminal. The sub-circuit also shunts a negative polarity ESD pulse to ground.
摘要翻译：自我ESD保护RF晶体管。 RF晶体管连接到子电路，其使得RF晶体管自我保护免受ESD损坏。子电路触发RF晶体管将正极性ESD脉冲钳位到接地/发射极端子。子电路还将负极性ESD脉冲分流到地。

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