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21. 发明授权

US08203190B2 MEMS device including a chip carrier 有权
标题翻译： MEMS器件包括芯片载体
公开(公告)号：US08203190B2
公开(公告)日：2012-06-19
申请号：US12825131
申请日：2010-06-28
申请人： Jason P. Goodelle , Kaigham J. Gabriel
发明人： Jason P. Goodelle , Kaigham J. Gabriel
IPC分类号： H01L23/06 , H01L29/84
CPC分类号： B81C1/00333 , B81B2201/0257 , B81B2207/096 , B81C2203/0109 , H01L2224/48091 , H01L2924/10253 , H01L2924/1461 , H04R1/04 , H04R19/016 , H04R31/006 , H01L2924/00014 , H01L2924/00
摘要： A MEMS device includes a chip carrier having an acoustic port extending from a first surface to a second surface of the chip carrier, a MEMS die disposed on the chip carrier to cover the acoustic port at the first surface of the chip carrier, and an enclosure bonded to the chip carrier and encapsulating the MEMS die.
摘要翻译： MEMS器件包括具有从芯片载体的第一表面延伸到第二表面的声学端口的芯片载体，设置在芯片载体上以覆盖芯片载体的第一表面处的声学端口的MEMS管芯，以及壳体结合到芯片载体并封装MEMS管芯。

22. 发明申请

US20070278601A1 MEMS device and method of fabricating the same 有权
标题翻译： MEMS器件及其制造方法
公开(公告)号：US20070278601A1
公开(公告)日：2007-12-06
申请号：US11446398
申请日：2006-06-05
申请人： Jason P. Goodelle , Kaigham J. Gabriel
发明人： Jason P. Goodelle , Kaigham J. Gabriel
IPC分类号： H01L29/84
CPC分类号： B81C1/00333 , B81B2201/0257 , B81B2207/096 , B81C2203/0109 , H01L2224/48091 , H01L2924/10253 , H01L2924/1461 , H04R1/04 , H04R19/016 , H04R31/006 , H01L2924/00014 , H01L2924/00
摘要： A MEMS device includes a chip carrier having an acoustic port extending from a first surface to a second surface of the chip carrier, a MEMS die disposed on the chip carrier to cover the acoustic port at the first surface of the chip carrier, and an enclosure bonded to the chip carrier and encapsulating the MEMS die.
摘要翻译： MEMS器件包括具有从芯片载体的第一表面延伸到第二表面的声学端口的芯片载体，设置在芯片载体上以覆盖芯片载体的第一表面处的声学端口的MEMS管芯，以及壳体结合到芯片载体并封装MEMS管芯。

23. 发明授权

US07202101B2 Multi-metal layer MEMS structure and process for making the same 有权
标题翻译：多金属层MEMS结构和制造过程相同
公开(公告)号：US07202101B2
公开(公告)日：2007-04-10
申请号：US10902984
申请日：2004-07-30
申请人： Kaigham J. Gabriel , Xu Zhu
发明人： Kaigham J. Gabriel , Xu Zhu
IPC分类号： H01L21/62
CPC分类号： B81C1/00158 , B81B2201/018 , B81B2201/0257 , B81C2201/0109 , H01G5/16
摘要： The present invention is directed to a structure comprised of alternating layers of metal and sacrificial material built up using standard CMOS processing techniques, a process for building such a structure, a process for fabricating devices from such a structure, and the devices fabricated from such a structure. In one embodiment, a first metal layer is carried by a substrate. A first sacrificial layer is carried by the first metal layer. A second metal layer is carried by the sacrificial layer. The second metal layer has a portion forming a micro-machined metal mesh. When the portion of the first sacrificial layer in the area of the micro-machined metal mesh is removed, the micro-machined metal mesh is released and suspended above the first metal layer a height determined by the thickness of the first sacrificial layer. The structure may be varied by providing a base layer of sacrificial material between the surface of the substrate and the first metal layer. In that manner, a portion of the first metal layer may form a micro-machined mesh which is released when a portion of the base sacrificial layer in the area of the micro-machined mesh is removed. Additionally, a second layer of sacrificial material and a third metal layer may be provided. A micro-machined mesh may be formed in a portion of the third metal layer. The structure of the present invention may be used to construct variable capacitors, switches and, when certain of the meshes are sealed, microspeakers and microphones.
摘要翻译：本发明涉及由使用标准CMOS处理技术构建的金属和牺牲材料的交替层的结构，用于构建这种结构的工艺，用于从这种结构制造器件的工艺以及由这样的器件制造的器件结构体。在一个实施例中，第一金属层由衬底承载。第一牺牲层由第一金属层承载。第二金属层由牺牲层承载。第二金属层具有形成微加工金属网的部分。当去除微加工金属网的区域中的第一牺牲层的部分时，微加工金属网被释放并悬浮在第一金属层上方的高度由第一牺牲层的厚度确定。可以通过在衬底的表面和第一金属层之间提供牺牲材料的基底层来改变结构。以这种方式，第一金属层的一部分可以形成微机加工的网，其在微加工网的区域中的部分基底牺牲层被去除时释放。另外，可以提供第二层牺牲材料和第三金属层。微加工网可以形成在第三金属层的一部分中。本发明的结构可用于构造可变电容器，开关，并且当确定的网孔被密封时，微型扬声器和麦克风。

24. 发明授权

US10555090B2 Microphone with encapsulated moving electrode 有权
公开(公告)号：US10555090B2
公开(公告)日：2020-02-04
申请号：US16000593
申请日：2018-06-05
申请人： Akustica, Inc. , Robert Bosch GmbH
发明人： Jochen Reinmuth , Vijaye Rajaraman , Daniel Meisel , Bernhard Gehl
IPC分类号： B81C1/00 , H04R1/28 , H04R19/04 , H04R19/00 , H04R7/04
摘要： A MEMS microphone system with encapsulated movable electrode is provided. The MEMS microphone system comprises a MEMS sensor having an access channel, a plug, and first and second members. The access channel configured to receive the plug is formed on at least one of the first and second member. A vacuum having a pressure different from a pressure outside the MEMS sensor is formed between the first and second members.

25. 发明授权

US10442683B2 Corrugated package for microelectromechanical system (MEMS) device 有权
公开(公告)号：US10442683B2
公开(公告)日：2019-10-15
申请号：US15099007
申请日：2016-04-14
申请人： Akustica, Inc. , Robert Bosch GmbH
发明人： Kuldeep Saxena
IPC分类号： B81B7/00 , B81B7/02 , B81C1/00
摘要： A MEMS device package assembly for encapsulating one or more internal components includes a first MEMS device package. The first package includes a cover and a substrate attached to the cover by any suitable methods of attachment. A corrugated structure is formed on at least one of an inner or outer wall of the cover. The assembly further includes a second MEMS device package having a cover, a substrate, and a corrugated structured formed on at least one of an inner or outer wall of the cover. The first and second MEMS device packages may be coupled to the same substrate or different substrate. In another embodiment, the first MEMS device package may be mounted on the second MEMS device package. In yet another embodiment, the first MEMS device package may be contained in the second MEMS device package.

26. 发明授权

US10199344B2 Side ported MEMS sensor device package and method of manufacturing thereof 有权
公开(公告)号：US10199344B2
公开(公告)日：2019-02-05
申请号：US15637039
申请日：2017-06-29
申请人： Akustica, Inc. , Robert Bosch GmbH
发明人： Mikko V A Suvanto
IPC分类号： B81B7/02 , B81C1/00 , H01L23/00 , B81B7/00 , H01L25/16
摘要： A MEMS sensor device package comprises a sensor assembly comprising a sensor device and a sensor circuit communicating coupled to the sensor device, The MEMS sensor device package further comprises an assembly package housing having a top member and a bottom member attached to the top member for encapsulating the sensor assembly. A passageway fluidly coupled the sensor device to attributes outside the package housing the passageway is embedded into the package housing, wherein the top member comprising a top wall and side walls, the side walls are attached to the bottom member, and the passageway is embedded into at least one of the side walls.

27. 发明授权

US10080082B2 Microphone system having high acoustical overload point 有权
公开(公告)号：US10080082B2
公开(公告)日：2018-09-18
申请号：US15471470
申请日：2017-03-28
申请人： Akustica, Inc. , Robert Bosch GmbH
发明人： Saikrishna Ganta , Chinwuba Ezekwe
IPC分类号： H04R3/00 , H04R3/02 , H04R19/00 , H04R19/04
CPC分类号： H04R3/02 , H04R3/00 , H04R19/005 , H04R19/04 , H04R2201/003 , H04R2410/03
摘要： A microphone biasing circuit comprises a microphone connected between a first node and a first DC bias voltage, the microphone configured to provide a sensed voltage at the first node in response to sound; a first diode and a second diode, the first diode and the second diode connected antiparallel with one another between the first node and a second node, the second node having a second DC bias voltage; an amplifier having an input connected to the first node and an output connected to a third node, the amplifier configured to provide an output voltage to the third node based on the sensed voltage at the first node; and a feedback path connected from the third node to the second node. The feedback path comprises at least one element configured to couple alternating components of the output voltage at the third node to the second node.

28. 发明授权

US09781519B2 Molded interconnect mircoelectromechanical system (MEMS) device package 有权
公开(公告)号：US09781519B2
公开(公告)日：2017-10-03
申请号：US15099096
申请日：2016-04-14
申请人： Akustica, Inc. , Robert Bosch GmbH
发明人： Kuldeep Saxena
IPC分类号： H04R19/04 , B81B7/00 , H04R19/00 , H04R1/06 , H04R1/04
CPC分类号： H04R19/04 , B81B7/0041 , B81B2201/0257 , B81B2207/097 , B81C2203/0118 , H01L2224/48091 , H01L2224/48137 , H04R1/04 , H04R1/06 , H04R19/005 , H04R2201/003 , H01L2924/00014
摘要： A microelectromechanical system (MEMS) device package for encapsulating a MEMS device a molded package spacer that connects to a conductive lid and to a substrate. The molded package spacer forms either side walls or a divider of the MEMS device package and is adapted to route electrical connections from the MEMS device to either the substrate or a second MEMS device package via the substrate.

29. 发明授权

US07863714B2 Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same 有权
标题翻译：具有屏障的单片MEMS和集成电路器件及其制造方法
公开(公告)号：US07863714B2
公开(公告)日：2011-01-04
申请号：US11446397
申请日：2006-06-05
申请人： Brett M. Diamond , Matthew A. Zeleznik
发明人： Brett M. Diamond , Matthew A. Zeleznik
IPC分类号： H01L23/552
CPC分类号： B81C1/00246 , B81B2201/0257 , B81B2207/015 , B81B2207/07 , B81C2203/0778 , H01L23/564 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit device includes a semiconductor die, the semiconductor die including a semiconductor substrate, driving/control circuitry disposed along a peripheral region of the semiconductor die, a MEMS device disposed within a central region of the semiconductor die, and a barrier disposed between the driving/control circuitry and the MEMS device.
摘要翻译：集成电路器件包括半导体管芯，半导体管芯包括半导体衬底，沿着半导体管芯的周边区域设置的驱动/控制电路，设置在半导体管芯的中心区域内的MEMS器件，驱动/控制电路和MEMS器件。

30. 发明授权

US07640805B2 Proof-mass with supporting structure on integrated circuit-MEMS platform 有权
标题翻译：在集成电路MEMS平台上具有支撑结构的质量
公开(公告)号：US07640805B2
公开(公告)日：2010-01-05
申请号：US11640345
申请日：2006-12-18
申请人： Brett M. Diamond , Matthew A. Zeleznik , Jan E. Vandemeer , Kaigham J. Gabriel
发明人： Brett M. Diamond , Matthew A. Zeleznik , Jan E. Vandemeer , Kaigham J. Gabriel
IPC分类号： G01P15/125
CPC分类号： B81C1/00246 , B81C2203/0742
摘要： Provided is a micro-electromechanical-system (MEMS) device including a substrate; at least one semiconductor layer provided on the substrate; a circuit region including at least one chip containing drive/sense circuitry, the circuit region provided on the at least one semiconductor layer; a support structure attached to the substrate; at least one elastic device attached to the support structure; a proof-mass suspended by the at least one elastic device and free to move in at least one of the x-, y-, and z-directions; at least one top electrode provided on the at least one elastic device; and at least one bottom electrode located beneath the at least one elastic device such that an initial capacitance is generated between the at least one top and bottom electrodes, wherein the drive/sense circuitry, proof-mass, supporting structure, and the at least one top and bottom electrodes are fabricated on the at least one semiconductor layer.
摘要翻译：提供了一种包括基板的微机电系统（MEMS）装置; 设置在所述基板上的至少一个半导体层; 电路区域，包括至少一个包含驱动/感测电路的芯片，所述电路区域设置在所述至少一个半导体层上; 附着在基板上的支撑结构; 连接到所述支撑结构的至少一个弹性装置; 由所述至少一个弹性装置悬挂的自由移动的x，y和z方向中的至少一个; 设置在所述至少一个弹性装置上的至少一个顶部电极; 以及位于所述至少一个弹性装置下方的至少一个底部电极，使得在所述至少一个顶部和底部电极之间产生初始电容，其中所述驱动/感测电路，证明质量，支撑结构和所述至少一个在至少一个半导体层上制造顶部和底部电极。

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