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11. 发明授权

US11988727B1 Magnetostrictive MEMS magnetic gradiometer 有权
公开(公告)号：US11988727B1
公开(公告)日：2024-05-21
申请号：US16932427
申请日：2020-07-17
申请人： HRL Laboratories, LLC
发明人： Randall L. Kubena , Walter S. Wall
IPC分类号： G01R33/022 , H03B5/32 , H10N30/87 , H10N35/80 , H10N35/85
CPC分类号： G01R33/022 , H03B5/323 , H10N35/80 , H10N35/85 , H10N30/871
摘要： A magnetic gradiometer sensor comprising a substrate with at least a pair of resonators disposed thereon, wherein each of the at least a pair of resonators is coated with a magnetostrictive film. The resonators are preferably connected to sustaining circuits to form oscillators and the oscillators are preferably used within a phase lock loop to detect a difference in the magnetic field between the at least a pair of resonators.

12. 发明授权

US11985903B2 Wiring electrode 有权
公开(公告)号：US11985903B2
公开(公告)日：2024-05-14
申请号：US17528227
申请日：2021-11-17
申请人： Murata Manufacturing Co., Ltd.
发明人： Yuji Toyota
IPC分类号： H10N30/87
CPC分类号： H10N30/877
摘要： A wiring electrode on a piezoelectric substrate includes layers including an adhesive layer in contact with the piezoelectric substrate, an outermost layer indirectly above the adhesive layer, a low-resistance layer between the adhesive layer and the outermost layer, including first and second principal surfaces, and having a lowest electric resistance among the layers, and a barrier layer between the low-resistance layer and the outermost layer. An outer peripheral edge of the second principal surface of the low-resistance layer is inside an outer peripheral edge of the barrier layer, and an outer peripheral edge of the adhesive layer is outside an outer peripheral edge of the low-resistance layer, in plan view.

13. 发明授权

US11984261B2 Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal device 有权
公开(公告)号：US11984261B2
公开(公告)日：2024-05-14
申请号：US17411416
申请日：2021-08-25
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Anderson Lin , Chun-Ren Cheng , Chi-Yuan Shih , Shih-Fen Huang , Yi-Chuan Teng , Yi Heng Tsai , You-Ru Lin , Yen-Wen Chen , Fu-Chun Huang , Fan Hu , Ching-Hui Lin , Yan-Jie Liao
IPC分类号： H01G4/012 , H01G4/12 , H01G4/228 , H01L21/311 , H01L21/3213 , H01L41/047 , H01L41/083 , H01L41/113 , H01L49/02 , H10N30/30 , H10N30/50 , H10N30/87
CPC分类号： H01G4/012 , H01G4/12 , H01G4/228 , H01L21/31111 , H01L21/32139 , H01L28/60 , H10N30/302 , H10N30/501 , H10N30/508 , H10N30/872
摘要： Various embodiments of the present disclosure are directed towards an integrated chip including a dielectric structure sandwiched between a first electrode and a bottom electrode. A passivation layer overlies the second electrode and the dielectric structure. The passivation layer comprises a horizontal surface vertically below a top surface of the passivation layer. The horizontal surface is disposed above a top surface of the dielectric structure.

14. 发明授权

US11957059B2 Electrical component 有权
公开(公告)号：US11957059B2
公开(公告)日：2024-04-09
申请号：US17294152
申请日：2019-11-15
申请人： Xaar Technology Limited
发明人： Andrew Vella , Peter Mardilovich
IPC分类号： H01L41/053 , B41J2/14 , B41J2/16 , B81B3/00 , H10N30/00 , H10N30/20 , H10N30/853 , H10N30/87 , H10N30/88
CPC分类号： H10N30/883 , B41J2/14201 , B41J2/1623 , B41J2/1628 , B81B3/0021 , H10N30/10516 , H10N30/2047 , H10N30/8554 , H10N30/8561 , H10N30/871 , B81B2201/057 , B81B2203/04
摘要： The present invention relates to an electrical component for a microelectromechanical systems (MEMS) device, in particular, but not limited to, an electromechanical actuator. In one aspect, the present invention provides an insulated electrical component for a microelectromechanical systems device comprising: i) a substrate layer comprising first and second sides spaced apart in a thickness direction; ii) one or more electrical elements arranged over the first side of the substrate layer, wherein each of the one or more electrical elements comprises: a) a ceramic member; and b) first and second electrodes disposed adjacent the ceramic member such that a potential difference may be established between the first and second electrodes and through the ceramic member during operation; iii) a continuous insulating layer, or laminate of insulating layers, arranged to overlie each of the one or more electrical elements arranged on the first side of the substrate layer; and iv) a passivation layer, or laminate of multiple passivation layers, disposed adjacent to, and at least partially overlying, each of the one or more electrical elements so as to provide electrical passivation between the first and second electrodes of each of the one or more electrical elements; wherein: a) the passivation layer, or at least an innermost layer of the laminate of multiple passivation layers which is disposed adjacent each of the one or more underlying electrical elements, is discontinuous; and/or b) the laminate of multiple passivation layers is recessed at a side which faces away from each of the underlying electrical elements, wherein a recess is provided in a region overlying each of the one or more electrical elements, such that the laminate of passivation layers is thinner in a thickness direction across the recess compared to other non-recessed regions of the laminate of passivation layers.

15. 发明授权

US11936365B2 Elastic wave device 有权
公开(公告)号：US11936365B2
公开(公告)日：2024-03-19
申请号：US18115117
申请日：2023-02-28
申请人： Murata Manufacturing Co., Ltd.
发明人： Masakazu Mimura
IPC分类号： H03H9/02 , H03H3/10 , H03H9/10 , H03H9/145 , H03H9/25 , H10N30/87
CPC分类号： H03H9/02889 , H03H3/10 , H03H9/02559 , H03H9/02637 , H03H9/1092 , H03H9/145 , H03H9/14541 , H03H9/25 , H10N30/877
摘要： An elastic wave device includes an interdigital transducer electrode, a dielectric film, and a frequency adjustment film are disposed on a LiNbO3 substrate. When Euler Angles of the LiNbO3 substrate are within a range of about 0°±5°, within a range of about θ±1.5°, within a range of about 0°±10°, the interdigital transducer electrode includes a main electrode, a film thickness of the main electrode normalized by a wavelength determined in accordance with an electrode finger pitch of the interdigital transducer electrode is denoted as T, and a density ratio of a material of the main electrode to Pt is denoted as r, the film thickness of the main electrode and θ of the Euler Angles satisfy θ=−0.05°/(T/r−0.04)+31.35°.

16. 发明公开

US20240090334A1 PIEZOELECTRIC DEVICE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20240090334A1
公开(公告)日：2024-03-14
申请号：US18513640
申请日：2023-11-20
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chih-Ming Chen
IPC分类号： H10N30/853 , H10N30/00 , H10N30/076 , H10N30/082 , H10N30/50 , H10N30/87
CPC分类号： H10N30/853 , H10N30/076 , H10N30/082 , H10N30/10516 , H10N30/501 , H10N30/871 , H10N30/872
摘要： A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

17. 发明授权

US11929735B2 XBAR resonators with non-rectangular diaphragms 有权
公开(公告)号：US11929735B2
公开(公告)日：2024-03-12
申请号：US17120975
申请日：2020-12-14
申请人： Murata Manufacturing Co., Ltd.
发明人： Ventsislav Yantchev , Patrick Turner , Viktor Plesski , Julius Koskela , Robert B. Hammond
IPC分类号： H03H9/56 , H03H3/02 , H03H9/02 , H03H9/13 , H03H9/17 , H03H9/60 , H10N30/87
CPC分类号： H03H9/568 , H03H9/02015 , H03H9/02031 , H03H9/02062 , H03H9/02228 , H03H9/132 , H03H9/174 , H03H9/176 , H03H9/562 , H03H9/564 , H03H9/605 , H03H3/02 , H03H2003/023 , H03H9/02039 , H10N30/877
摘要： Acoustic resonator devices, filter devices, and methods of fabrication are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least a portion of an edge of the diaphragm is at an oblique angle to the fingers.

18. 发明授权

US11913851B2 Pressure sensor 有权
公开(公告)号：US11913851B2
公开(公告)日：2024-02-27
申请号：US17462519
申请日：2021-08-31
申请人： Japan Display Inc.
发明人： Takumi Sano , Shinichiro Oka
IPC分类号： G01L9/08 , G01L1/16 , G01L1/18 , H10N30/30 , H10N30/857 , H10N30/87
CPC分类号： G01L9/08 , G01L1/16 , G01L1/18 , H10N30/302 , H10N30/857 , H10N30/87
摘要： A pressure sensor includes an insulating base material, a switching element disposed on the insulating base material, a piezoelectric layer disposed on the insulating base material and the switching element and an underlying layer located between the piezoelectric layer and the insulating base material, and the modulus of elasticity of the underlying layer is greater than the modulus of elasticity of the piezoelectric layer.

19. 发明公开

US20240065107A1 PIEZOELECTRIC ELEMENT AND PRODUCTION METHOD THEREFOR 审中-公开
公开(公告)号：US20240065107A1
公开(公告)日：2024-02-22
申请号：US18271817
申请日：2022-09-08
申请人： NGK SPARK PLUG CO., LTD.
发明人： Yoshinobu HIROSE , Kentaro ICHIHASHI , Takashi KASASHIMA , Masato YAMAZAKI
IPC分类号： H10N30/853 , H10N30/87 , H10N30/50 , H10N30/097 , H10N30/08 , H10N30/067
CPC分类号： H10N30/8542 , H10N30/871 , H10N30/50 , H10N30/097 , H10N30/08 , H10N30/067
摘要： A piezoelectric element having a piezoelectric body and an electrode in contact with the piezoelectric body: the piezoelectric body being formed of a lead-free piezoelectric ceramic composition which includes a primary phase formed of an alkali niobate-based perovskite oxide represented by a compositional formula (A1aM1b)c(Nbd1Mnd2Tid3Zrd4Hfd5)O3+e (wherein element A1 represents at least one species among the alkali metals; element M1 represents at least one species among Ba, Ca, and Sr; the following conditions: 0

20. 发明授权

US11910718B2 Multilayered piezoelectric thin film element 有权
公开(公告)号：US11910718B2
公开(公告)日：2024-02-20
申请号：US17014808
申请日：2020-09-08
申请人： XAAR TECHNOLOGY LIMITED
发明人： Peter Mardilovich , Susan Trolier-McKinstry
IPC分类号： H10N30/85 , H10N30/06 , H10N30/078 , H10N30/87 , H10N30/00 , H10N30/20 , H10N30/853 , B41J2/14
CPC分类号： H10N30/85 , B41J2/14233 , H10N30/06 , H10N30/078 , H10N30/1051 , H10N30/2047 , H10N30/8554 , H10N30/87 , B41J2002/14266
摘要： A piezoelectric thin film element having a first electrode, a second electrode and a piezoelectric thin film between the electrodes, wherein the thin film comprises a laminate having two or more piezoelectric thin film layers and wherein a first thin film layer is doped by one or more dopants and a second film layer is doped by one or more dopants and wherein at least one dopant of the second thin film layer is different from the dopant or dopants of the first thin film layer.

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