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11. 发明申请

US20010045837A1 Method of Determining A Resonant Frequency Of A Mechanical Device 有权
标题翻译：确定机械装置的谐振频率的方法
公开(公告)号：US20010045837A1
公开(公告)日：2001-11-29
申请号：US09904403
申请日：2001-07-12
发明人： Ralph Pringle JR. , Felix E. Morgan
IPC分类号： G01R029/22
CPC分类号： G01R31/2824 , G01R29/22
摘要： A method and apparatus for measuring the frequency of a desired resonant mode of a crystal arrangement, or other two-port device, during an automated operation. The crystal arrangement, or other two-port device, is placed into a test circuit and subjected to a sinusoidal test signal of known frequency. Based upon the output response of the crystal arrangement to the test signal, the frequency of the test signal is changed such that the test signal rapidly converges on a desired mode of operation of the crystal arrangement. This is accomplished by first noting a desired increase in amplitude of the output response of the crystal arrangement, followed by measuring an error signal related to the desired crystal arrangement mode of operation. When the error equals a predetermined value the frequency of the sinusoidal test signal is the frequency of the desired mode.
摘要翻译：一种用于在自动操作期间测量晶体装置或其它双端口装置的期望谐振模式的频率的方法和装置。晶体布置或其他双端口器件被放置在测试电路中并经受已知频率的正弦测试信号。基于晶体布置对测试信号的输出响应，测试信号的频率被改变，使得测试信号在晶体布置的期望操作模式上快速收敛。这是通过首先注意到晶体布置的输出响应的幅度的期望增加，然后测量与期望的晶体布置操作模式相关的误差信号来实现的。当误差等于预定值时，正弦测试信号的频率是所需模式的频率。

12. 发明申请

US20010020874A1 Method of evaluating quality of crystal unit 失效
标题翻译：评估晶体单位质量的方法
公开(公告)号：US20010020874A1
公开(公告)日：2001-09-13
申请号：US09764456
申请日：2001-01-19
发明人： Hajime Ushiyama
IPC分类号： G01R029/22 , H03B005/32
CPC分类号： G01R31/2824
摘要： A method of evaluating quality of a crystal unit, capable of performing quantitative measurement of an actual operation of a crystal unit which is to be oscillated in an actual oscillator to ensure an accurate quality evaluation, is provided which comprises the steps of increasing a DC input voltage of a crystal oscillator, said crystal oscillator having at least one AGC amplifier whose amplification rate varies depending on the DC input voltage and having a crystal unit connected thereto; measuring a maximum value of the DC input voltage at a start of oscillation of the crystal oscillator; and evaluating quality of the crystal unit by the measured maximum value.
摘要翻译：一种评估晶体单元的质量的方法，其能够对在实际振荡器中振荡的晶体单元的实际操作进行定量测量，以确保精确的质量评估，其包括以下步骤：增加DC输入所述晶体振荡器具有至少一个AGC放大器，其放大率根据DC输入电压而变化，并具有与其连接的晶体单元; 在晶体振荡器的振荡开始时测量直流输入电压的最大值; 并通过测量的最大值评估晶体单位的质量。

13. 发明申请

US20010011887A1 MICRO-MECHANICAL PROBES FOR CHARGE SENSING 失效
标题翻译：充电感测的微机械探针
公开(公告)号：US20010011887A1
公开(公告)日：2001-08-09
申请号：US08873819
申请日：1997-06-12
发明人： JAMES C. STURM , KIRAN PANGAL , SAMARA L. FIREBAUGH
IPC分类号： G01R029/22
CPC分类号： H01J37/32935
摘要： A method and apparatus for measuring a charge on surface, such as on a semiconductor wafer, arising during plasma processing is provided. Such a charge may be measured on an insulating film applied to such a wafer. By the present invention, the charge on such an insulator exposed to plasma is measured in-situ using micro-cantilevers. The micro-cantilevers include an insulating base positioned on the substrate and a cantilevered beam extending therefrom to over the substrate. The beam is formed of a conductive material. A charge on the beam causes an opposite charge to form on the substrate. The opposite charges attract to move or deflect the beam towards the substrate. The amount of movement or deflection corresponds to the magnitude of the charge. This movement or deflection of the beam can be measured to determine the charge by bouncing a light source, such as a laser, off of the beam. In another embodiment, the cantilever includes a flexible bridge interconnected between the base and a rigid beam. In this embodiment, the surface of the beam does not bend. Rather, movement of the beam is accomplished by the bending of the flexible bridge. This allows for easier measurements of the movement of the beam because the surface of the beam remains planar.
摘要翻译：提供了一种用于测量在等离子体处理期间产生的诸如半导体晶片上的表面上的电荷的方法和装置。可以在施加到这种晶片的绝缘膜上测量这样的电荷。通过本发明，使用微悬臂梁原位测量暴露于等离子体的这种绝缘体上的电荷。微型悬臂包括位于基板上的绝缘基体和从其延伸到基板上方的悬臂梁。光束由导电材料形成。光束上的电荷导致在基板上形成相反的电荷。相反的电荷吸引将光束移向或偏转朝向衬底。移动量或偏转量对应于电荷的大小。可以测量光束的这种移动或偏转，以通过使诸如激光器的光源从光束反射来确定电荷。在另一个实施例中，悬臂包括在基座和刚性梁之间互连的柔性桥。在本实施例中，光束的表面不弯曲。而是通过柔性桥的弯曲实现梁的移动。这允许更容易地测量光束的运动，因为光束的表面保持平面。

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