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11. 发明授权

US06827835B2 Method for electroplated metal annealing process 有权
标题翻译：电镀金属退火方法
公开(公告)号：US06827835B2
公开(公告)日：2004-12-07
申请号：US10105313
申请日：2002-03-26
申请人： Neng-Hui Yang , Kuo Feng Huang , Tsung-Tang Hsieh
发明人： Neng-Hui Yang , Kuo Feng Huang , Tsung-Tang Hsieh
IPC分类号： C25D548
CPC分类号： H01L21/76883 , C25D5/50 , C25D7/12 , H01L21/2885
摘要： A method for electroplated metal annealing process. First, a semiconductor structure is provided, wherein the semiconductor structure has a plurality of semiconductor components, such as a gate electrode, a source region and a drain region, and a field oxide region. Second, a dielectric layer is formed over the semiconductor structure, and a via which exposes a part of the semiconductor structure is formed in the dielectric layer by the use of conventional lithographic and etching processes and an electroplated metal layer is formed over the dielectric layer; meanwhile, the via is filled with the electroplated metal layer. The electroplated metal layer is then annealed by a NH3 plasma process performed by plasma enhanced chemical vapor deposition (PECVD).
摘要翻译：一种电镀金属退火工艺的方法。首先，提供半导体结构，其中半导体结构具有多个半导体元件，例如栅电极，源极区和漏极区以及场氧化物区。其次，在半导体结构上形成电介质层，并且通过使用常规的光刻和蚀刻工艺在电介质层中形成暴露一部分半导体结构的通孔，并且在电介质层上形成电镀金属层; 同时，通孔填充有电镀金属层。然后通过等离子体增强化学气相沉积（PECVD）进行的NH 3等离子体处理使电镀金属层退火。

12. 发明授权

US06589414B2 Nitride layer forming methods 失效
标题翻译：氮化物层形成方法
公开(公告)号：US06589414B2
公开(公告)日：2003-07-08
申请号：US09875502
申请日：2001-06-04
申请人： Rita J. Klein
发明人： Rita J. Klein
IPC分类号： C25D548
CPC分类号： H01L21/76849 , C23C8/02 , H01L21/2885 , H01L21/76856 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L2924/0002 , H01L2924/00
摘要： Nitride layer formation includes a method wherein a material is electrodeposited on a substrate and converted, at least in part, to a layer comprising nitrogen and the electrodeposited material. The electrodepositing may occur substantially selective on a conductive portion of the substrate. Also, the converting may comprise exposing the electrodeposited material to a nitrogen-comprising plasma. Chromium nitride and chromium oxynitride are examples of nitrogen-comprising materials. Copper or gold wiring of an integrated circuit are examples of a substrate. The processing temperature during the electrodepositing and the converting may be selected not to exceed 500° C. The thickness and composition of the nitride layer may be effective to limit diffusion of the wiring through the nitride layer. A diffusion barrier forming method may include forming a patterned layer of integrated circuit copper wiring over a substrate. The copper wiring may be exposed to a chromium-ion-comprising environment while applying an electric current to the copper wiring to deposit chromium on the copper wiring. The chromium may be converted to a chromium-nitride-comprising diffusion barrier using a nitrogen-comprising plasma.
摘要翻译：氮化物层形成包括其中将材料电沉积在基底上并且至少部分地转化成包含氮和电沉积材料的层的方法。电沉积可以在基底的导电部分上基本上选择性地发生。此外，转换可以包括将电沉积材料暴露于含氮等离子体。氮化铬和氮氧化铬是含氮材料的实例。集成电路的铜或金布线是基板的例子。电沉积和转换期间的处理温度可以选择为不超过500℃。氮化物层的厚度和组成可以有效地限制布线通过氮化物层的扩散。扩散阻挡层形成方法可以包括在衬底上形成集成电路铜布线的图案化层。铜线可能暴露于含铬离子的环境中，同时向铜布线施加电流以在铜布线上沉积铬。可以使用含氮等离子体将铬转化为含氮化铬的扩散阻挡层。

13. 发明授权

US06527938B2 Method for microporous surface modification of implantable metallic medical articles 失效
标题翻译：可植入金属医疗用品的微孔表面改性方法
公开(公告)号：US06527938B2
公开(公告)日：2003-03-04
申请号：US09886545
申请日：2001-06-21
申请人： Thomas O. Bales , Scott L. Jahrmarkt
发明人： Thomas O. Bales , Scott L. Jahrmarkt
IPC分类号： C25D548
CPC分类号： C22C14/00 , A61B17/06166 , A61B17/064 , A61B17/12 , A61B17/72 , A61B17/80 , A61B17/86 , A61B17/866 , A61B2017/00243 , A61C8/0012 , A61C8/0013 , A61C8/0015 , A61F2/0077 , A61F2/01 , A61F2/28 , A61F2/30767 , A61F2/3094 , A61F2/32 , A61F2/38 , A61F2/82 , A61F2002/30925 , A61F2002/3098 , A61F2002/30981 , A61F2240/001 , A61F2310/00017 , A61F2310/00023 , A61F2310/00029 , A61F2310/00071 , A61F2310/00598 , A61F2310/00616 , A61L27/04 , A61L27/06 , A61L27/50 , A61L27/56 , A61L31/022 , A61L31/14 , A61L31/146 , A61L2400/18 , C23C8/80 , C23F1/26 , Y10T428/12479
摘要： A process for creating surface microporosity on a titanium (or other metal) medical device includes creating a surface oxide layer on the device; placing the device, which is connected to a negative terminal of an electrical power supply, into a calcium chloride bath; connecting the positive terminal of the power supply to an anode immersed in or containing calcium chloride thereby forming an electrolytic cell; passing current through the cell; removing the device from the bath; and cooling and rinsing the device to remove any surface salt. If necessary, the device is etched to remove metal oxide which may have formed during the cooling process. The resulting device has a microporous surface structure. Alternatively, only a designated surface portion of a medical device is made microporous, either by applying a non-oxidizing mask, removing a portion of the oxide layer, or subtracting a portion of a microporous surface.
摘要翻译：在钛（或其它金属）医疗装置上产生表面微孔的方法包括在所述装置上产生表面氧化物层; 将连接到电源的负极端子的装置放入氯化钙浴中; 将电源的正极端子连接到浸入或含有氯化钙的阳极，从而形成电解槽; 使电流通过电池; 从浴缸中取出设备; 并冷却和冲洗该装置以除去任何表面盐。如果需要，该器件被蚀刻以去除可能在冷却过程中形成的金属氧化物。所得装置具有微孔表面结构。或者，仅通过施加非氧化掩模，去除一部分氧化物层或减去一部分微孔表面，将医疗器械的指定表面部分制成微孔。

14. 发明授权

US06471848B1 Electrodeposition method of forming an oxide film 失效
标题翻译：电沉积法形成氧化膜
公开(公告)号：US06471848B1
公开(公告)日：2002-10-29
申请号：US09248891
申请日：1999-02-12
申请人： Kozo Arao , Noboru Toyama , Yuichi Sonoda , Yusuke Miyamoto
发明人： Kozo Arao , Noboru Toyama , Yuichi Sonoda , Yusuke Miyamoto
IPC分类号： C25D548
CPC分类号： H01L31/02167 , C23C8/40 , C25D5/48 , C25D7/0621 , C25D9/08 , Y02E10/50 , Y10S205/917
摘要： This invention provides an electrodeposition apparatus, comprising at least one electrodeposition vessel for supplying a current between a substrate and an electrode in an electrodeposition bath to form an oxide film or the substrate and a rinsing means for rinsing the substrate after passing the electrodeposition tank with water, wherein a humidifying means for preventing drying of at least the film forming surface of the substrate is provided along the transporting path of the substrate at least at the exit side of the electrodeposition vessel and an oxide film forming method. Thus a uniform oxide film without unevenness can be formed on the substrate.
摘要翻译：本发明提供了一种电沉积装置，其包括至少一个电沉积容器，用于在电沉积浴中在基底和电极之间提供电流以形成氧化膜或基底;以及漂洗装置，用于在使电沉积槽通过水后漂洗基底其特征在于，至少在所述电沉积容器的出口侧，沿着所述基板的输送路径设置防止至少所述基板的成膜面干燥的加湿机构和氧化膜形成方法。因此，可以在基板上形成不均匀的均匀的氧化膜。

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