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11. 发明授权

US09620205B2 All around electrode for novel 3D RRAM applications 有权
公开(公告)号：US09620205B2
公开(公告)日：2017-04-11
申请号：US14133057
申请日：2013-12-18
申请人： Intermolecular Inc.
发明人： Federico Nardi , Sergey Barabash , Yun Wang
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： G11C13/004 , G11C13/0007 , G11C13/003 , G11C2213/52 , H01L45/08 , H01L45/1206 , H01L45/146 , H01L45/1675
摘要： A resistive switching memory device can include three or more electrodes interfacing a switching layer, including a top electrode, a bottom electrode, and a side electrode. The top and bottom electrodes can be used for forming conductive filaments and for reading the memory device. The side electrode can be used to control the resistance state of the switching layer.

12. 发明申请

US20170092846A1 SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS 审中-公开
公开(公告)号：US20170092846A1
公开(公告)日：2017-03-30
申请号：US15126682
申请日：2014-07-07
申请人： INTEL CORPORATION
发明人： BRIAN S. DOYLE , KAAN OGUZ , CHARLES C. KUO , MARK L. DOCZY , SATYARTH SURI , DAVID L. KENCKE , ROBERT S. CHAU , ROKSANA GOLIZADEH MOJARAD
IPC分类号： H01L43/08 , H01L43/12 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C2213/52 , H01L27/222 , H01L43/12
摘要： Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (MTJ), such as spin-transfer torque memory (STTM) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner). The additional magnetic layer can help balance the magnetic field of the magnetic contact layer to limit parasitic fringing fields that would otherwise be caused by the magnetic contact layer. The additional magnetic layer may be antiferromagnetically coupled to the magnetic contact layer by, for example, including a nonmagnetic spacer layer between the two magnetic layers, thereby creating a synthetic antiferromagnet (SAF). The techniques can benefit, for example, magnetic contacts having magnetic directions that are substantially in-line or substantially in-plane with the layers of the MTJ stack.

13. 发明申请

US20170062522A1 Combining Materials in Different Components of Selector Elements of Integrated Circuits 审中-公开
标题翻译：将材料组合在集成电路选择元件的不同组件中
公开(公告)号：US20170062522A1
公开(公告)日：2017-03-02
申请号：US15235992
申请日：2016-08-12
申请人： Intermolecular, Inc.
发明人： Salil Mujumdar , Abhijit Pethe , Ashish Bodke , Kevin Kashefi
IPC分类号： H01L27/24 , G11C13/00 , H01L45/00
CPC分类号： H01L27/24 , G11C11/1659 , G11C13/003 , G11C2213/15 , G11C2213/52 , G11C2213/72 , H01L27/2409 , H01L45/04 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/148
摘要： Provided are selector elements having snapback characteristics and non-volatile memory cells comprising such selector elements. To achieve its snapback characteristic, a selector element may include a dielectric layer comprising an alloy of two or more materials. In the same or other embodiments, the selector element may include a doped electrode, such carbon electrodes doped with silicon, germanium, and/or selenium. Concentrations of different materials forming an alloy may vary throughout the thickness of the dielectric layer. For example, the concentration of the first one alloy material may be higher in the center of the dielectric layer than near the interfaces of the dielectric layer with the electrodes. Some examples of this alloy material include germanium, indium, and aluminum. Examples of other materials in the same alloy include silicon, gallium, arsenic, and antimony. In some embodiments, the alloy is formed by three or more elements, such as indium gallium arsenic.
摘要翻译：提供具有快速恢复特性的选择器元件和包括这种选择器元件的非易失性存储单元。为了实现其回跳特性，选择器元件可以包括包含两种或更多种材料的合金的电介质层。在相同或其它实施例中，选择器元件可以包括掺杂电极，掺杂有硅，锗和/或硒的碳电极。形成合金的不同材料的浓度可以在电介质层的整个厚度上变化。例如，第一种合金材料的浓度在电介质层的中心处可以比在具有电极的介电层的界面附近更高。该合金材料的一些实例包括锗，铟和铝。相同合金中的其它材料的实例包括硅，镓，砷和锑。在一些实施例中，合金由三种或更多种元素形成，例如铟镓砷。

14. 发明授权

US09576651B2 RRAM and method of read operation for RRAM 有权
标题翻译： RRAM和RRAM读操作方法
公开(公告)号：US09576651B2
公开(公告)日：2017-02-21
申请号：US14601458
申请日：2015-01-21
申请人： Taiwan Semiconductor Manufacturing Company Limited
发明人： Chun-Yang Tsai , Yu-Wei Ting , Kuo-Ching Huang , Chia-Fu Lee
IPC分类号： G11C13/00
CPC分类号： G11C13/004 , G11C13/0069 , G11C2013/0071 , G11C2213/52 , G11C2213/79
摘要： According to one embodiment, a method of RRAM operations is provided. The method includes the following operations: providing a first voltage difference across a resistor of the RRAM during a read operation; and providing a second voltage difference across the resistor of the RRAM during a reset operation, wherein the first voltage difference has the same polarity as the second voltage difference.
摘要翻译：根据一个实施例，提供了一种RRAM操作的方法。该方法包括以下操作：在读操作期间在RRAM的电阻器两端提供第一电压差; 以及在复位操作期间在所述RRAM的电阻器两端提供第二电压差，其中所述第一电压差具有与所述第二电压差相同的极性。

15. 发明授权

US09559300B2 Resistive random access memory device and manufacturing method thereof 有权
标题翻译：电阻随机存取存储器件及其制造方法
公开(公告)号：US09559300B2
公开(公告)日：2017-01-31
申请号：US14472670
申请日：2014-08-29
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hiroyuki Ode , Takeshi Yamaguchi , Takeshi Takagi , Toshiharu Tanaka , Masaki Yamato
IPC分类号： H01L27/10 , H01L45/00 , G11C13/00 , G11C11/419 , H01L27/118 , H01L27/115 , H01L27/24 , H01L27/112
CPC分类号： H01L45/146 , G11C11/419 , G11C13/0007 , G11C13/0009 , G11C13/004 , G11C13/0069 , G11C2013/005 , G11C2013/0073 , G11C2013/009 , G11C2213/32 , G11C2213/51 , G11C2213/52 , G11C2213/71 , H01L27/11206 , H01L27/115 , H01L27/118 , H01L27/24 , H01L27/2409 , H01L27/249 , H01L45/04 , H01L45/085 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/16
摘要： In accordance with an embodiment, a resistive random access memory device includes a substrate, first and second wiring lines, and a storage cell. The first and second wiring lines are disposed on the substrate so as to intersect each other. The storage cell is disposed between the first and second wiring lines at the intersection of the first and second wiring lines and includes a first electrode, a resistive switching film on the first electrode, a second electrode on the resistive switching film, and a tantalum oxide (TaOx) layer. The first electrode is electrically connected to the first wiring line. The second electrode is electrically connected to the second wiring line. The tantalum oxide (TaOx) layer is disposed between the first electrode and the resistive switching film and is in contact with the resistive switching film.
摘要翻译：根据实施例，电阻随机存取存储器件包括衬底，第一和第二布线以及存储单元。第一和第二布线被布置在基板上以便彼此相交。存储单元设置在第一和第二布线之间的第一和第二布线的交点处，并且包括第一电极，第一电极上的电阻切换膜，电阻开关膜上的第二电极和氧化钽（TaOx）层。第一电极电连接到第一布线。第二电极电连接到第二布线。氧化钽（TaOx）层设置在第一电极和电阻开关膜之间并与电阻开关膜接触。

16. 发明授权

US09559295B2 Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method 有权
标题翻译：纳米多层膜，场效应管，传感器，随机附件记忆及制备方法
公开(公告)号：US09559295B2
公开(公告)日：2017-01-31
申请号：US14345655
申请日：2012-09-19
申请人： INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES
发明人： Xiu-Feng Han , Hou-Fang Liu , Syed Rizwan , Da-Lai Li , Peng Guo , Guo-Qiang Yu , Dong-Ping Liu , Yi-Ran Chen
IPC分类号： G11C11/02 , H01L43/10 , H01L43/08 , G11C13/00 , G11C11/16 , H01L27/22 , H01L43/02 , H01F10/32 , H01F10/193
CPC分类号： H01L43/10 , G11C11/161 , G11C11/1675 , G11C11/22 , G11C13/0002 , G11C13/003 , G11C13/0069 , G11C2213/51 , G11C2213/52 , G11C2213/53 , G11C2213/55 , H01F10/193 , H01F10/1936 , H01F10/3218 , H01F10/3272 , H01L27/22 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A nano multilayer film of electrical field modulation type, a field effect transistor of electrical field modulation type, an electrical field sensor of switch type, and a random access memory of electrical field drive type can obtain an electro-resistance effect in an electrical field modulation multilayer film at room temperature. The nano multilayer film includes in succession from bottom to top a bottom layer, a substrate, a bottom layer, a functional layer, a buffer layer, an insulation layer, a conductive layer, and a cap layer. The buffer layer and the insulation layer can be selectively added as required when the conductive layer is made of a magnetic metal. The effect of influencing and changing the conductivity of the metal layer and thus adjusting the change in the resistance of the devices can obtain different resistance states corresponding to different electrical fields and achieving an electro-resistance effect.
摘要翻译：电场调制型的纳米多层膜，电场调制型的场效应晶体管，开关型的电场传感器以及电场驱动型的随机存取存储器可以在电场调制中获得电阻效应室温多层膜。纳米多层膜从底部到顶部依次包括底层，基底，底层，功能层，缓冲层，绝缘层，导电层和盖层。当导电层由磁性金属制成时，可根据需要选择性地添加缓冲层和绝缘层。影响和改变金属层的导电性并由此调节器件的电阻变化的效果可以获得与不同电场相对应的不同的电阻状态并实现电阻效应。

17. 发明申请

US20160351256A1 RESISTIVE MEMORY 有权
标题翻译：电阻记忆
公开(公告)号：US20160351256A1
公开(公告)日：2016-12-01
申请号：US14563375
申请日：2014-12-08
申请人： University of Massachusetts
发明人： Qiangfei Xia
IPC分类号： G11C13/00 , H01L27/24 , H01L45/00
CPC分类号： H01L27/2463 , G11C13/0002 , G11C13/0014 , G11C13/0023 , G11C13/0069 , G11C2213/33 , G11C2213/52 , G11C2213/77 , H01L27/2409 , H01L45/1233 , H01L45/1273 , H01L45/145 , H01L45/1675
摘要： A memory device includes one or more first semiconductor ridges formed on a first semiconductor wafer. The first semiconductor ridges are configured to be first electrodes. The memory device also includes one or more second semiconductor ridges formed on a second semiconductor wafer. The second semiconductor ridges are configured to be second electrodes and are placed orthogonally on top of the first semiconductor ridges forming a crossbar structure, with sharp edges of the first semiconductor ridges coupled to sharp edges of the second semiconductor ridges. Each area of coupling of a first semiconductor ridge and a second semiconductor ridge is configured to be a memory cell. In addition, the memory device includes a compound layer covering the sharp edges of at least one of the first semiconductor ridges or the second semiconductor ridges. The compound layer is configured to be a switching layer.
摘要翻译：存储器件包括形成在第一半导体晶片上的一个或多个第一半导体脊。第一半导体脊被配置为第一电极。存储器件还包括形成在第二半导体晶片上的一个或多个第二半导体脊。第二半导体脊被配置为第二电极，并且正交地放置在形成横梁结构的第一半导体脊的顶部上，其中第一半导体脊的尖锐边缘耦合到第二半导体脊的尖锐边缘。第一半导体脊和第二半导体脊的耦合的每个区域被配置为存储单元。此外，存储器件包括覆盖第一半导体脊或第二半导体脊中的至少一个的尖锐边缘的复合层。复合层被配置为开关层。

18. 发明授权

US09455033B2 Apparatuses and/or methods for operating a memory cell as an anti-fuse 有权
公开(公告)号：US09455033B2
公开(公告)日：2016-09-27
申请号：US14986329
申请日：2015-12-31
申请人： Micron Technology, Inc.
发明人： Andrea Redaelli
IPC分类号： G11C11/00 , G11C13/00 , G11C17/14 , G11C14/00
CPC分类号： G11C17/18 , G11C13/0004 , G11C13/0069 , G11C14/009 , G11C17/14 , G11C17/16 , G11C17/165 , G11C2213/52 , G11C2213/72
摘要： Embodiments disclosed herein relate to operating a memory cell as an anti-fuse, such as for use in phase change memory, for example.

19. 发明授权

US09425390B2 Select device for memory cell applications 有权
标题翻译：选择存储单元应用的设备
公开(公告)号：US09425390B2
公开(公告)日：2016-08-23
申请号：US14515998
申请日：2014-10-16
申请人： Micron Technology, Inc.
发明人： David H. Wells , Christopher D. Cardon , Caner Onal
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： H01L27/2427 , G11C13/0007 , G11C13/0021 , G11C13/003 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C2013/0071 , G11C2213/33 , G11C2213/35 , G11C2213/52 , H01L27/224 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/14 , H01L45/141 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/16 , H01L45/1608
摘要： The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
摘要翻译：本公开包括使用用于存储器单元应用的选择装置的选择装置和方法。示例性选择装置包括具有特定几何形状的第一电极，形成在第一电极上的半导体材料和形成在半导体材料上的具有特定几何形状的第二电极，其中所述选择装置被配置为响应于施加到选择设备的信号。

20. 发明授权

US09406379B2 Resistive random access memory with non-linear current-voltage relationship 有权
标题翻译：具有非线性电流 - 电压关系的电阻随机存取存储器
公开(公告)号：US09406379B2
公开(公告)日：2016-08-02
申请号：US13733843
申请日：2013-01-03
申请人： Crossbar, Inc.
发明人： Sung Hyun Jo , Kuk-Hwan Kim
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： G11C13/004 , G11C13/0007 , G11C2213/15 , G11C2213/52 , G11C2213/55 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266
摘要： Providing for fabrication, construction, and/or assembly of a resistive random access memory (RRAM) cell is described herein. The RRAM cell can exhibit a non-linear current-voltage relationship. When arranged in a memory array architecture, these cells can significantly mitigate sneak path issues associated with conventional RRAM arrays.
摘要翻译：本文描述了提供电阻随机存取存储器（RRAM）单元的制造，构造和/或组装。 RRAM单元可以表现出非线性的电流 - 电压关系。当被布置在存储器阵列架构中时，这些单元可以显着地减轻与常规RRAM阵列相关联的潜行路径问题。

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