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11. 发明授权

US07811465B2 Magnetic garnet single crystal and optical element using same as well as method of producing single crystal 有权
标题翻译：磁石榴石单晶和使用相同的光学元件以及单晶的制造方法
公开(公告)号：US07811465B2
公开(公告)日：2010-10-12
申请号：US11666331
申请日：2005-11-17
申请人： Atsushi Ohido
发明人： Atsushi Ohido
IPC分类号： G02F1/09
CPC分类号： G02F1/0036 , C30B19/00 , C30B19/02 , C30B19/04 , C30B29/28 , G02F1/09
摘要： The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal.The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula BixNayPbzM13−x−y−zFe5−wM2wO12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5
摘要翻译：本发明涉及通过液相外延（LPE）工艺制备的石榴石单晶和使用其的光学元件以及制备单晶的方法，目的是在降低的Pb含量和使用其的光学元件，以及制造单晶的方法。磁性石榴石单晶通过液相外延工艺生长，并由化学式BixNayPbzM13-x-y-zFe5-wM2wO12表示（M1是选自Y，Sm，Eu，Gd，Tb，Dy， Ho，Er，Tm，Yb和Lu; M2是选自Ga，Al，In，Ti，Ge，Si和Pt中的至少一种元素，条件是0.5

12. 发明授权

US07440480B2 Tetravalent chromium doped laser materials and NIR tunable lasers 失效
标题翻译：四价铬掺杂激光材料和NIR可调激光器
公开(公告)号：US07440480B2
公开(公告)日：2008-10-21
申请号：US11295749
申请日：2005-12-07
申请人： Robert R. Alfano , Vladimir Petricevic , Alexey Bykov
发明人： Robert R. Alfano , Vladimir Petricevic , Alexey Bykov
IPC分类号： H01S3/16
CPC分类号： C30B29/34 , C30B19/00 , C30B19/02 , C30B29/32 , H01S3/0405 , H01S3/042 , H01S3/0604 , H01S3/09415 , H01S3/1118 , H01S3/16 , H01S3/1623 , H01S3/1655 , H01S3/1675
摘要： A method is described to improve and produce purer Cr4+-doped laser materials and lasers with reduced co-incorporation of chromium in any other valence states, such as Cr3+, Cr2+, Cr5+, and Cr6+. The method includes: 1) certain crystals of olivine structure with large cation (Ca) in octahedral sites such as Cr4+:Ca2GeO4, Cr4+:Ca2SiO4, Cr4+:Ca2GexSi1-xO4 (where 0
摘要翻译：描述了一种方法来改善和产生更纯的掺杂4+的激光材料和具有减少的以任何其它价态的铬共掺入的激光器，例如Cr 3+ ，Cr 2+ +，Cr 5+和Cr 6+。该方法包括：1）在八面体位点如Cr 4+中的一些具有大阳离子（Ca）的橄榄石结构的某些晶体：Ca 2+ GeO 4 ，Cr 4+：Ca 2 SiO 4，Cr 4+：Ca 2+，其中0

13. 发明申请

US20070187700A1 Method of manufacturing group III nitride substrate and semiconductor device 审中-公开
标题翻译：制造III族氮化物衬底和半导体器件的方法
公开(公告)号：US20070187700A1
公开(公告)日：2007-08-16
申请号：US11731225
申请日：2007-03-30
申请人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Akihiko Ishibashi
发明人： Yasuo Kitaoka , Hisashi Minemoto , Isao Kidoguchi , Akihiko Ishibashi
IPC分类号： H01L33/00
CPC分类号： C30B25/02 , C30B19/00 , C30B29/403 , C30B29/406 , Y10S117/902
摘要： The present invention provides a method of manufacturing a Group III nitride substrate that has less variations in in-plane carrier concentration and includes crystals grown at a high growth rate. The manufacturing method of the present invention includes: (i) forming a semiconductor layer (a seed layer 12) on a substrate, with the semiconductor layer being formed of a semiconductor expressed by a composition formula of AluGavIn1−u−vN (wherein 0≦u≦1 and 0≦v≦1) and having a (0001) plane present at its surface; (ii) processing the surface of the semiconductor layer so that the surface becomes a plane sloped with respect to the (0001) plane of the semiconductor layer; and (iii) bringing the surface of the semiconductor layer into contact with a melt containing a solvent and at least one Group III element selected from gallium, aluminum, and indium, in an atmosphere containing nitrogen, to make the at least one Group III element and the nitrogen react with each other to grow Group III nitride crystals (GaN single crystals 13) on the semiconductor layer.
摘要翻译：本发明提供一种制造面内载流子浓度变化小的III族氮化物衬底的方法，包括以高生长速率生长的晶体。本发明的制造方法包括：（i）在基板上形成半导体层（种子层12），半导体层由以下组成式表示的半导体形成：半导体层（其中0 <= u <= 1且0 <= v <= 1），并且在其表面上存在（0001）面 ; （ii）处理半导体层的表面，使得该表面成为相对于半导体层的（0001）面倾斜的平面; 和（iii）在含氮气氛中使半导体层的表面与含有溶剂和至少一种选自镓，铝和铟的III族元素的熔体接触，以制备至少一种III族元素并且氮彼此反应以在半导体层上生长III族氮化物晶体（GaN单晶13）。

14. 发明授权

US07186578B2 Thin sheet production method and thin sheet production device 失效
标题翻译：薄板生产方法和薄板生产装置
公开(公告)号：US07186578B2
公开(公告)日：2007-03-06
申请号：US10519560
申请日：2003-06-24
申请人： Shuji Goma , Hirozumi Gokaku , Toshiaki Nagai , Kozaburo Yano , Masahiro Tadokoro , Yasuhiro Nakai
发明人： Shuji Goma , Hirozumi Gokaku , Toshiaki Nagai , Kozaburo Yano , Masahiro Tadokoro , Yasuhiro Nakai
IPC分类号： H01L21/00
CPC分类号： C30B19/00 , C30B29/06
摘要： In order to obtain a thin plate manufacturing method capable of extremely increasing manufacturing efficiency by enlarging the production scale and remarkably reducing the manufacturing cost per unit area and an apparatus for manufacturing this thin plate, a method and an apparatus performing introduction of a substrate into a main chamber and discharge of the substrate from the main chamber through at least one subsidiary chamber adjacent to the main chamber are employed when manufacturing a silicon thin plate by dipping a surface layer part of the substrate into a silicon melt in a crucible arranged in the main chamber for bonding silicon to the surface of the substrate.
摘要翻译：为了获得能够通过扩大生产规模并显着降低每单位面积的制造成本而极大地提高制造效率的薄板制造方法以及制造该薄板的装置的方法和装置，当通过在布置在主室中的坩埚中将基板的表面层浸入硅熔体中来制造硅薄板时，采用主室和基板从主室通过邻近主室的至少一个辅助室的排出用于将硅键合到衬底的表面上。

15. 发明申请

US20060194418A1 Smooth surface liquid phase epitaxial germanium 有权
标题翻译：光滑表面液相外延锗
公开(公告)号：US20060194418A1
公开(公告)日：2006-08-31
申请号：US11339017
申请日：2006-01-25
申请人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , David Evans , Allen Burmaster
发明人： Jong-Jan Lee , Jer-Shen Maa , Douglas Tweet , David Evans , Allen Burmaster
IPC分类号： H01L21/20 , H01L21/311
CPC分类号： C30B19/00 , C30B29/08 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02623 , H01L21/02639 , H01L21/30625 , H01L21/7624 , H01L27/14683 , H01L27/14689 , H01L29/16 , H01L29/78 , H01L31/028 , H01L31/105 , H01L31/1126 , H01L31/1136 , H01L31/1804 , H01L31/1808 , Y02E10/547 , Y02P70/521
摘要： A method is provided for forming a liquid phase epitaxial (LPE) germanium (Ge)-on-insulator (GOI) thin-film with a smooth surface. The method provides a silicon (Si) wafer, forms a silicon nitride insulator layer overlying the Si wafer, and selectively etches the silicon nitride insulator layer, forming a Si seed access region. Then, the method conformally deposits Ge overlying the silicon nitride insulator layer and Si seed access region, forming a Ge layer with a first surface roughness, and smoothes the Ge layer using a chemical-mechanical polish (CMP) process. Typically, the method encapsulates the Ge layer and anneals the Ge layer to form a LPE Ge layer. A Ge layer is formed with a second surface roughness, less than the first surface roughness. In some aspects, the method forms an active device in the LPE Ge layer.
摘要翻译：提供一种形成具有光滑表面的液相外延（LPE）锗（Ge） - 绝缘体（GOI）薄膜的方法。该方法提供硅（Si）晶片，形成覆盖Si晶片的氮化硅绝缘体层，并且选择性地蚀刻氮化硅绝缘体层，形成Si种子接入区域。然后，该方法共同沉积覆盖氮化硅绝缘体层和Si种子访问区域的Ge，形成具有第一表面粗糙度的Ge层，并且使用化学机械抛光（CMP）工艺平滑Ge层。通常，该方法封装Ge层并退火Ge层以形成LPE Ge层。 Ge层形成有小于第一表面粗糙度的第二表面粗糙度。在某些方面，该方法在LPE Ge层中形成有源器件。

16. 发明申请

US20050116234A1 Minimizing degradation of SiC bipolar semiconductor devices 有权
标题翻译：最小化SiC双极半导体器件的退化
公开(公告)号：US20050116234A1
公开(公告)日：2005-06-02
申请号：US11022520
申请日：2004-12-22
申请人： Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
发明人： Joseph Sumakeris , Ranbir Singh , Michael Paisley , Stephan Mueller , Hudson Hobgood , Calvin Carter , Albert Burk
IPC分类号： H01L29/24 , H01L29/732 , H01L29/744 , H01L29/861 , H01L29/15
CPC分类号： H01L29/1608 , C30B19/00 , C30B23/002 , C30B25/02 , C30B29/36 , H01L29/6606 , H01L29/66068 , H01L29/732 , H01L29/744 , H01L29/861
摘要： A bipolar device has at least one p−type layer of single crystal silicon carbide and at least one n−type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.
摘要翻译：双极器件具有至少一个单晶碳化硅的p型层和至少一个n型单晶碳化硅层，其中在正向操作下生长的那些堆垛层错的那些部分与至少一个活动区域和设备的其余部分之间的接口。

17. 发明申请

US20050076829A1 Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus 有权
标题翻译：铌酸钾单晶薄膜，表面声波元件，频率滤波器，频率振荡器，电子电路和电子设备的制造方法
公开(公告)号：US20050076829A1
公开(公告)日：2005-04-14
申请号：US10916208
申请日：2004-08-11
申请人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
发明人： Takamitsu Higuchi , Setsuya Iwashita , Hiromu Miyazawa
IPC分类号： C30B19/00 , C30B19/12 , H03H3/08 , H03H9/02 , H03H9/05 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H03H9/02543 , C30B19/00 , C30B19/12 , C30B29/30 , H03H3/08 , H03H9/02574 , H03H9/0542
摘要： A method of manufacturing KNbO3 single crystal thin film having single-phase high quality and excellent morphology on each of single crystal substrates. A surface acoustic wave element, frequency filter, frequency oscillator, electronics circuit, and electronic device employ the thin film manufactured by the method, and have high k2, and are wideband, reduced in size and economical in power consumption. A plasma plume containing K, Nb, and O in the range 0.5≦x≦xE is supplied to a substrate, where x is a mole ratio of niobium (Nb) to potassium (K) in KxNb1-xOy, and xE is a mole composition ratio at the eutectic point for KNbO3 and 3K2O.Nb2O5 under a predetermined oxygen partial pressure. Maintaining the temperature Ts of the substrate in the range TE≦Ts≦Tm where TE represents the temperature at the eutectic point and Tm represents a complete melting temperature, the KNbO3 single crystal is precipitated from the KxNb1-xOy deposited on the substrate.
摘要翻译：在单晶基板上制造具有单相高质量和优异形态的KNbO3单晶薄膜的方法。表面声波元件，频率滤波器，频率振荡器，电子电路和电子器件采用通过该方法制造的薄膜，并且具有高k <2>，并且具有宽带，尺寸减小并且功耗经济。将含有0.5 <= X＆LE; XE的K，Nb和O的等离子体羽流供给到基板，其中x是KxNb1-xOy中铌（Nb）与钾（K）的摩尔比，xE是在预定的氧分压下在共晶点处的KNbO 3和3K 2 O·Nb 2 O 5的摩尔组成比。保持基板的温度Ts在TE <= Ts <= Tm范围内，其中TE表示共晶点处的温度，Tm表示完全熔融温度，KNbO3单晶从沉积在基板上的KxNb1-xOy沉淀。

18. 发明授权

US06743533B1 Oxide superconductor, manufacturing method thereof, and base substrate therefor 失效
标题翻译：氧化物超导体及其制造方法及其基板
公开(公告)号：US06743533B1
公开(公告)日：2004-06-01
申请号：US09959029
申请日：2001-12-11
申请人： Kazuomi Kakimoto , Natsuro Hobara , Teruo Izumi , Yuh Shiohara , Yuichi Nakamura , Kazuya Ohmatsu , Koso Fujino
发明人： Kazuomi Kakimoto , Natsuro Hobara , Teruo Izumi , Yuh Shiohara , Yuichi Nakamura , Kazuya Ohmatsu , Koso Fujino
IPC分类号： H01B1200
CPC分类号： C30B19/00 , C30B19/02 , C30B19/04 , C30B29/22 , C30B29/225 , H01L39/2425 , H01L39/2454
摘要： An oxide superconductor of the present invention characterized in that it comprises: a substrate 1 made of metals having a high melting temperature; at least one oxide intermediate layer 2 and 3 which is formed on at least one surface of the substrate 1; and a thick film oxide superconductor layer 5 which is formed on the oxide intermediate layer 2 and 3 the liquid phase epitaxial method in which the substrate 1 provided with the oxide intermediate layer 2 and 3 is put into a solution 7 containing the elements comprising an oxide superconductor layer, and is then pulled out from the solution 7.
摘要翻译：本发明的氧化物超导体的特征在于，它包括：由具有高熔点的金属制成的基片1; 形成在基板1的至少一个表面上的至少一个氧化物中间层2和3; 以及形成在氧化物中间层2和3上的厚膜氧化物超导体层5，其中将具有氧化物中间层2和3的基板1放入含有包含氧化物的元素的溶液7中的液相外延法超导体层，然后从溶液7中拉出。

19. 发明授权

US06709520B1 Reactor and method for chemical vapor deposition 有权
标题翻译：化学气相沉积的反应器和方法
公开(公告)号：US06709520B1
公开(公告)日：2004-03-23
申请号：US09601109
申请日：2000-10-16
申请人： André Leycuras
发明人： André Leycuras
IPC分类号： C23C1600
CPC分类号： C30B25/105 , C30B11/00 , C30B11/002 , C30B11/003 , C30B11/12 , C30B19/00 , C30B29/36 , C30B29/38
摘要： The process for chemical vapor deposition of layers of material on a substrate which extend generally in a plane is disclosed. The process for depositing thin film materials on the substrate is made more economical by virtue of a better energy balance than previously disclosed. The substrate is heated by radiation from the heat of a duct but also by the gases passing over the substrate which themselves are heated by the duct. The heating of the gases further improves the coupling between the heating means and the substrate.
摘要翻译：公开了一种基本上在平面上延伸的衬底上的材料层的化学气相沉积方法。由于与先前公开的更好的能量平衡，使得在衬底上沉积薄膜材料的工艺变得更经济。衬底通过来自管道的热量的辐射而被加热，而且也被通过衬底的气体加热，衬底本身被管道加热。气体的加热进一步改善了加热装置和衬底之间的耦合。

20. 发明授权

US06468884B2 Method of forming silicon-contained crystal thin film 失效
标题翻译：形成含硅晶体薄膜的方法
公开(公告)号：US06468884B2
公开(公告)日：2002-10-22
申请号：US09765728
申请日：2001-01-19
申请人： Koji Miyake , Kiyoshi Ogata
发明人： Koji Miyake , Kiyoshi Ogata
IPC分类号： H01L2136
CPC分类号： H01L21/76254 , C30B19/00 , C30B19/12 , C30B29/06 , C30B29/60 , C30B31/22 , H01L21/26506
摘要： A method of forming a silicon-contained crystal thin film can efficiently form the crystal thin film of a relatively large thickness. In the method, hydrogen ions are implanted into a silicon-contained crystal substrate. Voids are formed by immersing the ion-implanted crystal substrate in a melted metal liquid containing, e.g., silicon and indium for heating the substrate. While pressing an ion-injected surface of the substrate, the substrate is heated by the melted metal liquid to form the voids. By cooling the liquid, the silicon in the supersaturated liquid is deposited on the surface of the substrate so that the silicon-contained crystal film is formed on the surface of the substrate. The substrate is divided in the void-formed position. Thereby, a thin film including the silicon-contained crystal film layered on a portion of the substrate is obtained. The silicon-contained crystal thin film thus obtained can be adhered to a support substrate, if necessary.
摘要翻译：形成含硅晶体薄膜的方法可以有效地形成厚度较大的晶体薄膜。在该方法中，将氢离子注入到含硅晶体基板中。通过将离子注入的晶体衬底浸入含有例如硅和铟的熔融金属液体中以加热衬底而形成空隙。在按压衬底的离子注入表面的同时，通过熔化的金属液体加热衬底以形成空隙。通过冷却液体，将过饱和液体中的硅沉积在基板的表面上，使得在基板的表面上形成含硅晶体膜。基板被分成空隙形成位置。由此，获得了包含层叠在基板的一部分上的含硅晶体膜的薄膜。如果需要，由此获得的含硅晶体薄膜可以粘附到支撑基板上。

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