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11. 发明授权

US5725672A Apparatus for the high speed, low pressure gas jet deposition of conducting and dielectric thin sold films 失效
标题翻译：用于高速，低压气体喷射沉积导电介电薄膜的设备
公开(公告)号：US5725672A
公开(公告)日：1998-03-10
申请号：US377672
申请日：1995-01-24
申请人： Jerome J. Schmitt , Bret L. Halpern
发明人： Jerome J. Schmitt , Bret L. Halpern
IPC分类号： F01D5/28 , B05D3/04 , B05D5/12 , B22F9/12 , B32B9/00 , C23C14/00 , C23C14/24 , C23C16/01 , C23C16/24 , C23C16/44 , C23C16/455 , H01M4/04 , H01M4/38 , H01M6/18 , C23C16/00
CPC分类号： H01M4/0404 , B22F9/12 , C23C14/0005 , C23C14/0021 , C23C14/228 , C23C14/24 , C23C16/01 , C23C16/24 , C23C16/4551 , C23C16/45563 , C23C16/45593 , H01M4/04 , H01M4/0402 , H01M4/0423 , H01M4/0428 , H01M4/0438 , H01M4/0471 , H01M4/049 , H01M4/383 , H01M6/185 , H01M6/188
摘要： Described is a method for depositing from the vapor phase a chemical species into the form of a thin solid film material which overlays a substrate material. The deposition process consists of three steps: (1) synthesis of depositing species, (2) transport of said species from site of synthesis to a prepared substrate material, and (3) condensation and subsequent film growth. The transport step is achieved by admixing small concentrations of the depositing species into the flow of a high speed jet of an inert carrier gas. This jet impinges on the substrate's surface and thereby convects the depositing species to this surface where condensation occurs. Since the gas mixture is at fairly high pressure, the deposition is achieved in a simple flow apparatus rather than in the high vacuum systems required of other methods. Also this transport technique allows the chemical and/or physical phenomena utilized in the depositing species synthesis step to be isolated from the actual condensation reaction. Consequently, the conditions governing each of these reactions can be varied independently to optimize both steps. Such flexibility permits the synthesis and deposition of a wide variety of chemical species, hence many thin film materials are susceptible to formation by this method.
摘要翻译：描述了一种从气相中将化学物质沉积成覆盖衬底材料的薄固体膜材料形式的方法。沉积过程由三个步骤组成：（1）沉积物质的合成，（2）将所述物质从合成位点输送到制备的基底材料，以及（3）冷凝和随后的膜生长。运输步骤通过将小浓度的沉积物质混合到惰性载气的高速喷射流中来实现。这种喷射器冲击在基板的表面上，从而将沉积物质对流到出现冷凝的表面。由于气体混合物处于相当高的压力下，所以沉积在简单的流动装置中而不是其它方法所需的高真空系统中实现。而且，这种运输技术允许在沉积物种合成步骤中使用的化学和/或物理现象与实际的缩合反应隔离。因此，可以独立地改变控制每个这些反应的条件以优化两个步骤。这种灵活性允许各种化学物质的合成和沉积，因此许多薄膜材料易于通过该方法形成。

12. 发明授权

US5554257A Method of treating surfaces with atomic or molecular beam 失效
标题翻译：用原子或分子束处理表面的方法
公开(公告)号：US5554257A
公开(公告)日：1996-09-10
申请号：US270839
申请日：1994-07-05
申请人： Kenetsu Yokogawa , Yoshimi Kawanami , Tatsumi Mizutani
发明人： Kenetsu Yokogawa , Yoshimi Kawanami , Tatsumi Mizutani
IPC分类号： C23F4/02 , C23C16/44 , C23C16/448 , C23C16/455 , H01L21/203 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/00
CPC分类号： C23C16/4551 , C23C16/448 , H01L21/02046 , H01L21/02381 , H01L21/02661
摘要： A molecular or atomic beam for cleaning or etching semiconductor substrates, or for forming a thin film on a semiconductor substrate is formed by generating a chemical reaction between at least two gases introduced into a reaction chamber. The products of the chemical reaction, and optionally additional atoms or molecules introduced into the reaction chamber, pass through an aperture to form a beam that is projected onto a sample supported in a sample chamber. The translation energy generated by the chemical reaction accelerates the atoms, molecules and/or particles to a high speed to enable cleaning, etching or depositing processes to be formed with the beam without damaging the surface of the substrate being treated.
摘要翻译：用于清洁或蚀刻半导体衬底或用于在半导体衬底上形成薄膜的分子或原子束通过在引入到反应室中的至少两种气体之间产生化学反应而形成。引入到反应室中的化学反应产物和任选的另外的原子或分子通过一个孔，形成一个投影到样品室中的样品上的光束。由化学反应产生的翻译能量使原子，分子和/或颗粒高速加速，从而能够清洗，蚀刻或沉积与光束形成的工艺，而不会损坏正被处理的衬底的表面。

13. 发明授权

US5336324A Apparatus for depositing a coating on a substrate 失效
标题翻译：用于在基底上沉积涂层的装置
公开(公告)号：US5336324A
公开(公告)日：1994-08-09
申请号：US803647
申请日：1991-12-04
申请人： Richard A. Stall , Gary S. Tompa , Alexander Gurary , Craig R. Nelson
发明人： Richard A. Stall , Gary S. Tompa , Alexander Gurary , Craig R. Nelson
IPC分类号： C23C14/24 , C23C16/44 , C23C16/455 , C30B25/14 , C23C16/00
CPC分类号： C23C16/45512 , C23C14/243 , C23C16/4551 , C23C16/45591 , C30B25/14
摘要： An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus may be used to efficiently coat large areas uniformly, and works equally well with either elemental or chemical source materials, or certain combinations of both. The features of the coating apparatus may be embodied in replacement source cells for retrofitting in conventional molecular beam and chemical beam epitaxy units.
摘要翻译：用于在衬底上沉积涂层的装置基本上通过产生加热的曲折路径来消除椭圆形缺陷的发生，通过该曲折路径，源材料蒸气必须在沉积在衬底之前必须行进。此外，用于每个源材料的截止阀位于反应室中紧邻基板，从而使不同组成的层能够在相邻层之间沉积有明显的过渡。该装置可以用于有效地涂覆大面积均匀，并且与元素或化学源材料或两者的某些组合一样良好地工作。涂覆装置的特征可以体现在用于在常规分子束和化学束外延单元中进行改装的替换源电池中。

14. 发明授权

US4937094A Method of creating a high flux of activated species for reaction with a remotely located substrate 失效
标题翻译：产生高通量的活化物质用于与位于远端的基质反应的方法
公开(公告)号：US4937094A
公开(公告)日：1990-06-26
申请号：US373300
申请日：1989-06-29
申请人： Joachim Doehler , Stephen J. Hudgens , Stanford R. Ovshinsky , Buddie Dotter, II , Lester R. Peedin , Jeffrey M. Krisko , Annette Krisko
发明人： Joachim Doehler , Stephen J. Hudgens , Stanford R. Ovshinsky , Buddie Dotter, II , Lester R. Peedin , Jeffrey M. Krisko , Annette Krisko
IPC分类号： C23C16/44 , C23C16/452 , C23C16/455
CPC分类号： C23C16/4551 , C23C16/452 , C23C16/455 , C23C16/45514
摘要： A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux to activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.
摘要翻译：一种通过在其中将能量转移气体引入抽真空的外壳中的第一导管和在所述真空室中退出的背景压力之间的实质压差来形成能量转移气体的高通量活化物质如离子的方法，外壳。在一个实施例中，当与所述压力差相结合时，流过所述第一导管的能量转移气体的流速导致能量转移气体的活化物质与前体沉积/蚀刻剂气体的远距离碰撞通过第二导管引入外壳，用于从其形成沉积/蚀刻剂物质。在替代实施例中，压差使得这些活化物质本身沉积在或远离远离定位的基底的表面上蚀刻。

15. 发明授权

US4033286A Chemical vapor deposition reactor 失效
标题翻译：化学气相沉积反应器
公开(公告)号：US4033286A
公开(公告)日：1977-07-05
申请号：US704468
申请日：1976-07-12
申请人： Shy-Shiun Chern , Joseph Maserjian
发明人： Shy-Shiun Chern , Joseph Maserjian
IPC分类号： C23C16/44 , C23C16/455 , C23C11/08 , B05D5/12
CPC分类号： C23C16/45508 , C23C16/4412 , C23C16/455 , C23C16/4551 , C23C16/45519 , C23C16/45591
摘要： An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.
摘要翻译：一种改进的化学气相沉积反应器的特征在于一种气相沉积室，其被配置为通过控制气流并从室中除去气相反应材料，基本上消除了沉积在基板上的膜中的不均匀性。膜的厚度均匀性是通过将反应气体通过放置在均匀分布的位置处的多个喷嘴注入而产生的。气相反应材料通过排放烟囱去除，排气烟囱位于放置基板的位于中心的加热垫或平台上方。挡板位于烟囱口下方的加热平台上方，以防止气相反应物料的向下分散和散射。

16. 发明授权

US09528184B2 Atomic-layer deposition method using compound gas jet 有权
标题翻译：使用复合气体射流的原子层沉积法
公开(公告)号：US09528184B2
公开(公告)日：2016-12-27
申请号：US14621428
申请日：2015-02-13
申请人： Eastman Kodak Company
发明人： Kurt D. Sieber , Kam Chuen Ng , Ronald Steven Cok
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45525 , C23C16/4412 , C23C16/4551 , C23C16/45544 , C23C16/45574 , C23C16/45576 , C23C16/458 , C23C16/4584 , C23C16/4585
摘要： A method for depositing a thin film on a substrate using atmospheric pressure atomic-layer deposition includes providing a chamber having an atmosphere and a stationary support located in the chamber. The moveable substrate is located in a spatial relationship with the stationary support. A pressurized compound fluid flow, including an inert fluid surrounding a reactive fluid, is provided simultaneously through the stationary support that impinges on at least a portion of the moveable substrate to fluidically levitate the moveable substrate and expose the moveable substrate to the compound fluid flow to deposit a thin film on the moveable substrate.
摘要翻译：使用大气压原子层沉积在基板上沉积薄膜的方法包括提供具有气氛的室和位于室中的固定支撑件。可移动衬底位于与固定支撑件的空间关系中。通过固定支架同时提供包括反应流体周围的惰性流体的加压复合流体流动，所述固定支撑件撞击在可移动基板的至少一部分上以流动地悬浮可移动基板并将可移动基板暴露于复合流体流动在可移动的基板上沉积薄膜。

17. 发明申请

US20160056448A1 SINGLE-STEP SYNTHESIS OF NANOSTRUCTURED THIN FILMS BY A CHEMICAL VAPOR AND AEROSOL DEPOSITION PROCESS 审中-公开
标题翻译：通过化学蒸气和气溶胶沉积过程对纳米结构薄膜的单步合成
公开(公告)号：US20160056448A1
公开(公告)日：2016-02-25
申请号：US14830361
申请日：2015-08-19
申请人： Washington University
发明人： Tandeep Singh Chadha , Pratim Biswas , Woo-Jin An
IPC分类号： H01M4/04 , C01G23/047 , C01G19/02 , H01M4/48
CPC分类号： H01M4/0428 , C01G1/02 , C01G19/02 , C01G23/07 , C01P2002/04 , C01P2002/54 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/16 , C01P2006/40 , C23C16/405 , C23C16/4551 , H01M4/1391 , H01M4/485 , H01M10/0525 , H01M10/054
摘要： The present disclosure is generally directed to a single-step synthesis of nanostructured thin films by a chemical vapor and aerosol deposition (CVAD) process. The present disclosure is also directed to methods for controlling the morphology of the nanostructured thin films. The films can be used, for example, in lithium ion and/or sodium ion battery electrodes, solar cells and gas sensors.
摘要翻译：本公开一般涉及通过化学气相和气溶胶沉积（CVAD）方法单步合成纳米结构薄膜。本公开还涉及用于控制纳米结构薄膜的形态的方法。该膜可用于例如锂离子和/或钠离子电池电极，太阳能电池和气体传感器。

18. 发明申请

US20150368796A1 APPARATUS FOR GAS INJECTION TO EPITAXIAL CHAMBER 审中-公开
标题翻译：气体注射到外壳室的装置
公开(公告)号：US20150368796A1
公开(公告)日：2015-12-24
申请号：US14744296
申请日：2015-06-19
申请人： Applied Materials, Inc.
发明人： Xuebin LI , Kevin JOSEPH BAUTISTA , Avinash SHERVEGAR , Yihwan KIM , Nyi O. MYO , Abhishek DUBE
IPC分类号： C23C16/455 , F16L41/02
CPC分类号： C23C16/45504 , C23C16/24 , C23C16/4412 , C23C16/4551 , C23C16/45563 , C30B25/14 , C30B35/00
摘要： Embodiments described herein generally relate to apparatus for forming silicon epitaxial layers on semiconductor devices. Deposition gases and etching gases may be provided sequentially or simultaneously to improve epitaxial layer deposition characteristics. A gas distribution assembly may be coupled to a deposition gas source and an etching gas source. Deposition gas and etching gas may remain separated until the gases are provided to a processing volume in a processing chamber. Outlets of the gas distribution assembly may be configured to provide the deposition gas and etching gas into the processing volume with varying characteristics. In one embodiment, outlets of the gas distribution assembly which deliver etching gas to the processing volume may be angled upward relative to a surface of a substrate.
摘要翻译：本文描述的实施例一般涉及用于在半导体器件上形成硅外延层的装置。可以顺序地或同时地提供沉积气体和蚀刻气体以改善外延层沉积特性。气体分配组件可以耦合到沉积气体源和蚀刻气体源。沉积气体和蚀刻气体可以保持分离，直到气体被提供到处理室中的处理体积。气体分配组件的出口可以被配置成将沉积气体和蚀刻气体提供到具有不同特征的处理体积中。在一个实施例中，将蚀刻气体输送到处理容积的气体分配组件的出口可以相对于衬底的表面向上倾斜。

19. 发明授权

US09153429B2 Film deposition apparatus having a turntable and film deposition method 有权
标题翻译：具有转台和成膜方法的成膜装置
公开(公告)号：US09153429B2
公开(公告)日：2015-10-06
申请号：US14106926
申请日：2013-12-16
申请人： Tokyo Electron Limited
发明人： Jun Ogawa
IPC分类号： H01L21/00 , H01L21/02 , C23C16/34 , C23C16/40 , C23C16/455
CPC分类号： H01L21/02164 , C23C16/34 , C23C16/405 , C23C16/4551 , C23C16/45551 , H01L21/0217 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/0228 , H01L21/02312 , H01L21/02337
摘要： A method of depositing a film of forming an oxide film containing a predetermined element on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing the oxide film by rotating the turntable while supplying a reaction gas containing the predetermined element, the oxidation gas from the second gas supplying portion, and the separation gas; and rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion.
摘要翻译：一种使用包括转台安装基板的设备在基板上形成含有预定元素的氧化物膜的膜的方法，设置有气体供应部分的转盘上表面之上的第一和第二处理区域，分离气体供应部分第一处理区域和第二处理区域，以及分离区域，包括通过旋转转盘同时提供含有预定元素的反应气体，来自第二气体供给部分的氧化气体和分离气体来沉积氧化物膜; 并且在从第一气体供给部分和分离气体供应部分供应分离气体的同时旋转至少一圈，以及来自第二气体供应部分的氧化气体。

20. 发明授权

US09123510B2 Method for controlling in-plane uniformity of substrate processed by plasma-assisted process 有权
标题翻译：用于控制通过等离子体辅助工艺处理的衬底的面内均匀性的方法
公开(公告)号：US09123510B2
公开(公告)日：2015-09-01
申请号：US13915732
申请日：2013-06-12
申请人： ASM IP Holding B.V.
发明人： Ryu Nakano , Naoki Inoue
IPC分类号： C23C16/509 , H01J37/32 , C23C16/455 , C23C16/458
CPC分类号： H01J37/32449 , C23C16/4551 , C23C16/45519 , C23C16/45536 , C23C16/4585 , C23C16/5096 , H01J37/32431
摘要： A method for controlling in-plane uniformity of a substrate processed by plasma-assisted process in a reactor, includes: supplying a principal gas to a reaction space, and discharging radially the principal gas from the reaction space through an annular duct; and supplying an secondary gas to the reaction space from an area in close proximity to an outer periphery of a susceptor, outside an outer circumference of the substrate as viewed from above, so as to flow at least partially in an inward direction passing the outer circumference of the substrate, reversing the direction of the secondary gas to flow toward the annular duct in a vicinity of the outer circumference of the substrate, and discharging radially the secondary gas together with the principal gas from the reaction space through the annular duct.
摘要翻译：一种用于控制在反应器中通过等离子体辅助工艺处理的衬底的面内均匀性的方法，包括：向反应空间供应主要气体，并通过环形管径向从反应空间排出主要气体; 以及从基座的外周附近的区域向反应空间供给二次气体，在从上方观察的基板的外周的外侧，至少部分地沿着通过外周的内侧流动使基板的外周附近的二次气体的方向反向流向环状管道，并且使二次气体与来自反应空间的主要气体一起径向地通过环形管排出。

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