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11. 发明授权

US08253253B2 Connecting and bonding adjacent layers with nanostructures 有权
标题翻译：用纳米结构连接和粘合相邻层
公开(公告)号：US08253253B2
公开(公告)日：2012-08-28
申请号：US13361436
申请日：2012-01-30
申请人： Andrzej Brud , Mohammad Shafiqul Kabir
发明人： Andrzej Brud , Mohammad Shafiqul Kabir
IPC分类号： H01L29/40 , H01L21/44
CPC分类号： B32B37/12 , B32B37/06 , B32B37/10 , B32B37/16 , B32B38/0008 , B32B2037/1253 , B32B2307/202 , B32B2307/302 , B32B2307/706 , B32B2309/02 , B32B2309/12 , B32B2310/0831 , B32B2313/04 , B32B2457/00 , B82Y10/00 , C09J9/02 , H01L23/49811 , H01L23/49877 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05016 , H01L2224/05026 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05184 , H01L2224/29006 , H01L2224/2929 , H01L2224/29393 , H01L2224/29499 , H01L2224/32145 , H01L2224/83855 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0781 , H01L2924/07811 , H01L2924/10329 , H01L2924/10336 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/1423 , H01L2924/1433 , H01L2924/15788 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T428/24174 , H01L2224/29101 , H01L2924/00 , H01L2924/01028 , H01L2924/01026 , H01L2924/00014 , H01L2924/00012
摘要： An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
摘要翻译：一种包括两个导电表面或层的装置，以及结合到两个导电表面或层的纳米结构组件，以在两个导电表面或层之间形成电连接或热连接，以及制造它们的方法。

12. 发明授权

US08183659B2 Integrated circuits having interconnects and heat dissipators based on nanostructures 有权
标题翻译：具有基于纳米结构的互连和散热器的集成电路
公开(公告)号：US08183659B2
公开(公告)日：2012-05-22
申请号：US12830135
申请日：2010-07-02
申请人： Mohammad Shafiqul Kabir
发明人： Mohammad Shafiqul Kabir
IPC分类号： H01L27/095
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译：本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。

13. 发明授权

US07777291B2 Integrated circuits having interconnects and heat dissipators based on nanostructures 有权
标题翻译：具有基于纳米结构的互连和散热器的集成电路
公开(公告)号：US07777291B2
公开(公告)日：2010-08-17
申请号：US11511867
申请日：2006-08-28
申请人： Mohammad Shafiqul Kabir
发明人： Mohammad Shafiqul Kabir
IPC分类号： H01L27/095
CPC分类号： B01J23/755 , B01J23/76 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/04 , C23C16/26 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L29/0676 , H01L51/0003 , H01L51/0048 , H01L51/0052 , H01L51/0512 , H01L2221/1089 , H01L2221/1094 , Y10S977/734 , Y10S977/742 , Y10S977/75 , Y10S977/814 , Y10S977/842 , Y10S977/86
摘要： The present invention provides for nanostructures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译：本发明提供在导电或绝缘基板上生长的纳米结构及其制造方法。根据要求保护的方法生长的纳米结构适用于电子器件中的互连和/或散热器。

14. 发明授权

US07687876B2 Controlled growth of a nanostructure on a substrate 有权
标题翻译：在衬底上控制纳米结构的生长
公开(公告)号：US07687876B2
公开(公告)日：2010-03-30
申请号：US11412060
申请日：2006-04-25
申请人： Mohammad Shafiqul Kabir
发明人： Mohammad Shafiqul Kabir
IPC分类号： H01L27/095
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides for nanostructures grown on a conducting substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.
摘要翻译：本发明提供在导电基材上生长的纳米结构及其制备方法。根据要求保护的方法生长的纳米结构适用于制造诸如电子束写入器和场发射显示器的电子器件。

15. 发明申请

US20090233124A1 Deposition and Selective Removal of Conducting Helplayer for Nanostructure Processing 有权
标题翻译：沉积和选择性去除纳米结构加工的导电助手
公开(公告)号：US20090233124A1
公开(公告)日：2009-09-17
申请号：US12392017
申请日：2009-02-24
申请人： Jonas S. T. Berg , Vincent Desmaris , Mohammad Shafiqul Kabir , Muhammad Amin Saleem , David Brud
发明人： Jonas S. T. Berg , Vincent Desmaris , Mohammad Shafiqul Kabir , Muhammad Amin Saleem , David Brud
IPC分类号： B32B15/00 , B05D5/12 , B44C1/22
CPC分类号： C23C16/26 , B82Y10/00 , B82Y40/00 , C01B32/15 , C23C16/503 , G02B6/26 , H01B13/0026 , H01L21/0237 , H01L21/02491 , H01L21/02521 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/4871 , H01L21/76802 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/3677 , H01L23/3737 , H01L23/49827 , H01L23/5226 , H01L23/53276 , H01L29/0665 , H01L29/66439 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
摘要翻译：公开了一种制造一种或多种纳米结构的方法，所述方法包括：在衬底的上表面上沉积导电层; 在导电层上沉积图案化的催化剂层; 在催化剂层上生长一个或多个纳米结构; 并且选择性地去除所述一个或多个纳米结构之间和周围的导电层。还公开了一种包括衬底的器件，其中衬底包括由一个或多个绝缘区域隔开的一个或多个暴露的金属岛; 设置在所述基板上的导电助垫，其覆盖所述一个或多个暴露的金属岛或绝缘区域中的至少一些; 设置在导电助听器上的催化剂层; 以及设置在催化剂层上的一个或多个纳米结构。

16. 发明授权

US12033797B2 Discrete metal-insulator-metal (MIM) energy storage component and manufacturing method 有权
公开(公告)号：US12033797B2
公开(公告)日：2024-07-09
申请号：US17283105
申请日：2019-10-07
申请人： Smoltek AB
发明人： Vincent Desmaris , Rickard Andersson , Muhammad Amin Saleem , Maria Bylund , Anders Johansson , Fredrik Liljeberg , Ola Tiverman , M Shafiqul Kabir
IPC分类号： H01G11/36 , H01G11/56 , H01M10/0585 , H01M50/11 , H05K1/18
CPC分类号： H01G11/36 , H01G11/56 , H01M10/0585 , H01M50/11 , H05K1/181 , H05K2201/10015 , H05K2201/10037
摘要： A discrete metal-insulator-metal (MIM) energy storage component, the energy storage component comprising: a MIM-arrangement comprising: a first electrode layer; a plurality of conductive nanostructures grown from the first electrode layer; a conduction controlling material covering each nanostructure in the plurality of conductive nanostructures and the first electrode layer uncovered by the conductive nanostructures; and a second electrode layer covering the conduction controlling material; a first connecting structure for external electrical connection of the capacitor component; a second connecting structure for external electrical connection of the capacitor component; and an electrically insulating encapsulation material at least partly embedding the MIM-arrangement.

17. 发明公开

US20240068115A1 An electrolyzer comprising a catalyst supported on a nanostructure 审中-公开
公开(公告)号：US20240068115A1
公开(公告)日：2024-02-29
申请号：US18259623
申请日：2022-01-31
申请人： Smoltek AB
发明人： Vincent Desmaris , Fabian Wenger
IPC分类号： C25B11/065 , C25B9/23 , C25B11/032 , C25B11/037 , C25B11/054
CPC分类号： C25B11/065 , C25B9/23 , C25B11/032 , C25B11/037 , C25B11/054
摘要： An electrolyzer comprising a first and a second electrode and an ion exchange membrane arranged in-between the first and the second electrode. Each electrode comprises a conductive element and a catalyst layer and at least one catalyst layer comprises a catalyst structure. The catalyst structure comprises a plurality of elongated nanostructures and a plurality of electrocatalyst particles attached to the plurality of elongated nanostructures, wherein the plurality of elongated nanostructures is arranged to control a position of the plurality of electrocatalyst particles relative to the ion exchange membrane.

18. 发明申请

US20230075019A1 ELECTRONIC SYSTEM WITH POWER DISTRIBUTION NETWORK INCLUDING CAPACITOR COUPLED TO COMPONENT PADS 有权
公开(公告)号：US20230075019A1
公开(公告)日：2023-03-09
申请号：US17795999
申请日：2021-01-28
申请人： Smoltek AB
发明人： M Shafiqul Kabir , Vincent Desmaris , Anders Johansson , Ola Tiverman , Karl Lundahl , Rickard Andersson , Muhammad Amin Saleem , Maria Bylund , Victor Marknäs
IPC分类号： H01L25/16 , H05K1/11 , H01G4/005 , H01L49/02 , H01L23/00 , H01L23/64 , H05K1/02
摘要： An electronic system comprising a substrate with a substrate conductor pattern including substrate pads; a semiconductor component with active circuitry, and component pads coupled to the active circuitry of the semiconductor component and connected to the substrate pads of the substrate; a power source interface for receiving power from a power source; and a power distribution network for distributing power from the power source interface to the active circuitry of the semiconductor component. The power distribution network includes a first capacitor realized by conductive structures comprised in the semiconductor component, the first capacitor being coupled to a first component pad and a second component pad of the semiconductor component; a second capacitor arranged between the substrate and the semiconductor component, the second capacitor being coupled to the first component pad and the second component pad of the component package; and a power grid portion of the substrate conductor pattern.

19. 发明申请

US20220005777A1 SEMICONDUCTOR ASSEMBLY WITH DISCRETE ENERGY STORAGE COMPONENT 有权
公开(公告)号：US20220005777A1
公开(公告)日：2022-01-06
申请号：US17289060
申请日：2019-11-20
申请人： Smoltek AB
发明人： M Shafiqul Kabir , Vincent Desmaris , Rickard Andersson , Muhammad Amin Saleem , Maria Bylund , Anders Johansson , Fredrik Liljeberg , Ola Tiverman
IPC分类号： H01L23/00 , H01L25/065 , H01L25/10 , H01L49/02
摘要： A semiconductor assembly, comprising: a first semiconductor die including processing circuitry and pads, said first semiconductor die having a first surface and a second surface opposite the first surface; a second semiconductor die including memory circuitry and pads, said second semiconductor die being arranged on one of the first surface and the second surface of said first semiconductor die, and pads of said second semiconductor die being coupled to pads of said first semiconductor die; and at least a first capacitor having terminals, said first capacitor being arranged on one of the first surface and the second surface of said first semiconductor die and the terminals of said capacitor being coupled to pads of said first semiconductor die.

20. 发明申请

US20210043594A1 ASSEMBLY PLATFORM 有权
公开(公告)号：US20210043594A1
公开(公告)日：2021-02-11
申请号：US17077237
申请日：2020-10-22
申请人： Smoltek AB
发明人： M Shafiqul Kabir , Anders Johansson , Vincent Desmaris , Muhammad Amin Saleem
IPC分类号： H01L23/00 , H01L21/48 , H01L23/31 , H01L23/498
摘要： An assembly platform for arrangement as an interposer device between an integrated circuit and a substrate to interconnect the integrated circuit and the substrate through the assembly platform, the assembly platform comprising: an assembly substrate; a plurality of conducting vias extending through the assembly substrate; at least one nanostructure connection bump on a first side of the assembly substrate, the nanostructure connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate, wherein each of the nanostructure connection bumps comprises: a plurality of elongated conductive nanostructures vertically grown on the first side of the assembly substrate, wherein the plurality of elongated nanostructures are embedded in a metal for the connection with at least one of the integrated circuit and the substrate, at least one connection bump on a second side of the assembly substrate, the second side being opposite to the first side, the connection bump being conductively connected to the vias and defining connection locations for connection with at least one of the integrated circuit and the substrate.

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