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11. 发明授权

US09568564B2 Magnetic nano-multilayers for magnetic sensors and manufacturing method thereof 有权
标题翻译：用于磁传感器的磁性纳米多层及其制造方法
公开(公告)号：US09568564B2
公开(公告)日：2017-02-14
申请号：US13701474
申请日：2011-03-04
申请人： Qinli Ma , Houfang Liu , Xiufeng Han
发明人： Qinli Ma , Houfang Liu , Xiufeng Han
IPC分类号： G01R33/02 , B82Y25/00 , G01R33/09 , G11B5/39 , H01L43/08 , G11C11/16 , B82Y10/00 , H01L21/00
CPC分类号： G01R33/02 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11B2005/3996 , G11C11/16 , G11C11/161 , H01L21/00 , H01L43/08 , H01L2221/00 , H01L2223/00 , Y10S977/70
摘要： The invention discloses a magnetic nano-multilayers structure and the method for making it. The multilayer film includes—sequentially from one end to the other end—a substrate, a bottom layer, a magnetic reference layer, a space layer, a magnetic detecting layer and a cap layer. The, up-stated structure is for convert the information of the rotation of the magnetic moment of the magnetic detecting layer into electrical signals. The magnetic detecting layer is of a pinning structure to react to the magnetic field under detection. On the other hand, the invention sandwiches an intervening layer between the AFM and the FM to mitigate the pinning effect from the exchange bias. Moreover, the thickness of the intervening layer is adjustable to control the pinning effect from the exchange bias. The controllability ensures that the magnetic moments of the magnetic reference layer and the magnetic detecting layer remain at right angles to each other when the external field is zero. The invention achieves a GMR or TMR magnetic sensor exhibiting a linear response and by tuning the thickness of the non-magnetic metallic layer, the sensitivity as well as the detecting range of the devices can be tuned easily.
摘要翻译：本发明公开了一种磁性纳米多层结构及其制造方法。多层膜从一端到另一端依次包括基板，底层，磁性基准层，空间层，磁性检测层和盖层。上述结构用于将磁检测层的磁矩的旋转信息转换为电信号。磁检测层具有与被检测的磁场反应的钉扎结构。另一方面，本发明在AFM和FM之间夹着中间层，以减轻交换偏压的钉扎效应。此外，中间层的厚度是可调节的，以控制交换偏压的钉扎效应。当外场为零时，可控性确保磁参考层和磁检测层的磁矩保持彼此成直角。本发明实现了具有线性响应的GMR或TMR磁传感器，并且通过调谐非磁性金属层的厚度，可以容易地调节灵敏度以及器件的检测范围。

12. 发明授权

US08574927B2 Magnetic tunnel junction device and its fabricating method 有权
标题翻译：磁隧道结装置及其制造方法
公开(公告)号：US08574927B2
公开(公告)日：2013-11-05
申请号：US13335882
申请日：2011-12-22
申请人： Min-Hwa Chi , Xiufeng Han , Guoqiang Yu
发明人： Min-Hwa Chi , Xiufeng Han , Guoqiang Yu
IPC分类号： H01L21/8246
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Using a damascene process, a cup-shaped MTJ device is formed in an opening within a dielectric layer. A passivation layer is formed on the top surfaces of the sidewalls of the cup-shaped MTJ device to enclose the top of the sidewalls, thereby reducing magnetic flux leakage. Accordingly, the MTJ device may be fabricated using the same equipment that are compatible with and commonly used in CMOS technologies/processes.
摘要翻译：使用镶嵌工艺，在电介质层内的开口中形成杯形MTJ器件。在杯形MTJ装置的侧壁的顶表面上形成钝化层以封闭侧壁的顶部，由此减小磁通量泄漏。因此，可以使用与CMOS技术/工艺中兼容并且通常使用的相同设备来制造MTJ器件。

13. 发明申请

US20130099335A1 Novel Magnetic Tunnel Junction Device And Its Fabricating Method 有权
标题翻译：新型磁隧道接头装置及其制造方法
公开(公告)号：US20130099335A1
公开(公告)日：2013-04-25
申请号：US13335882
申请日：2011-12-22
申请人： Min-Hwa Chi , Xiufeng Han , Guoqiang Yu
发明人： Min-Hwa Chi , Xiufeng Han , Guoqiang Yu
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Using a damascene process, a cup-shaped MTJ device is formed in an opening within a dielectric layer. A passivation layer is formed on the top surfaces of the sidewalls of the cup-shaped MTJ device to enclose the top of the sidewalls, thereby reducing magnetic flux leakage. Accordingly, the MTJ device may be fabricated using the same equipment that are compatible with and commonly used in CMOS technologies/processes.
摘要翻译：使用镶嵌工艺，在电介质层内的开口中形成杯形MTJ器件。在杯形MTJ装置的侧壁的顶表面上形成钝化层以封闭侧壁的顶部，由此减小磁通量泄漏。因此，可以使用与CMOS技术/工艺中兼容并且通常使用的相同设备来制造MTJ器件。

14. 发明授权

US07936595B2 Close shaped magnetic multi-layer film comprising or not comprising a metal core and the manufacture method and the application of the same 有权
标题翻译：包括或不包含金属芯的闭合形状的多层膜及其制造方法及其应用
公开(公告)号：US07936595B2
公开(公告)日：2011-05-03
申请号：US12159657
申请日：2006-12-31
申请人： Xiufeng Han , Ming Ma , Qihang Qin , Hongxiang Wei , Lixian Jiang , Yunan Han
发明人： Xiufeng Han , Ming Ma , Qihang Qin , Hongxiang Wei , Lixian Jiang , Yunan Han
IPC分类号： G11C11/14
CPC分类号： G11C11/155 , B82Y25/00 , G01R33/093 , G01R33/098 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/1936 , H01F10/3254 , H01F10/3268 , H01F10/329 , H01F41/302 , H01L27/228 , H01L43/08
摘要： Each layer in the magnetic multilayer film is a closed ring or oval ring and the magnetic moment or flux of the ferromagnetic film in the magnetic unit is in close state either clockwise or counterclockwise. A metal core is put in the geometry center position in the close-shaped magnetic multilayer film. The cross section of the metal core is a corresponding circular or oval. A MRAM is made of the closed magnetic multilayer film with or without a metal core. The close-shaped magnetic multilayer film is formed by micro process method. The close-shaped magnetic multilayer film can be used broadly in a great variety of device that uses a magnetic multilayer film as the core, such as MRAM, magnetic bead in computer, magnetic sensitive sensor, magnetic logic device and spin transistor.
摘要翻译：磁性多层膜中的每层是闭环或椭圆环，并且磁性单元中的铁磁性膜的磁矩或磁通处于顺时针或逆时针处于接近状态。将金属芯置于紧密形状的磁性多层膜中的几何中心位置。金属芯的横截面是相应的圆形或椭圆形。 MRAM由具有或不具有金属芯的闭合磁性多层膜制成。通过微加工方法形成紧密形状的磁性多层膜。近似形状的磁性多层膜可以广泛用于以磁性多层膜为核心的多种器件，如MRAM，计算机中的磁珠，磁敏传感器，磁性逻辑器件和自旋晶体管。

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