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11. 发明授权

US4617248A Doped photoconductive film including selenium and tellurium 失效
标题翻译：掺杂的光电导膜包括硒和碲
公开(公告)号：US4617248A
公开(公告)日：1986-10-14
申请号：US736149
申请日：1985-05-20
申请人： Kenkichi Tanioka , Keiichi Shidara , Takao Kuriyama , Yukio Takasaki , Tadaaki Hirai , Yasuhiko Nonaka , Eisuke Inoue
发明人： Kenkichi Tanioka , Keiichi Shidara , Takao Kuriyama , Yukio Takasaki , Tadaaki Hirai , Yasuhiko Nonaka , Eisuke Inoue
IPC分类号： H01J31/26 , H01J1/78 , H01J29/45 , H01L31/0248 , H01L31/08 , G03G5/08 , G03G5/09
CPC分类号： H01J29/456
摘要： A structure of a photoconductive film related to a target of an image pickup tube of the photo conductivity type is disclosed. This photoconductive film is formed from mainly Se and Te is added in a central part thereof. Further, As, which is considered to form a deep trap level which captures electrons in Se and GaF.sub.3, etc. which form negative space charges by capturing electrons in Se are added in the region adjacent to the region where Te exists. In addition, a thickness of film in the region where GaF.sub.3, etc. exists is selected to be thinner (not smaller than 20 .ANG. and not larger than 90 .ANG.) than a value which has been adopted so far.
摘要翻译：公开了与光电导型的图像拾取管的靶相关的光电导膜的结构。该感光膜主要由Se形成，Te的中心部分添加Te。此外，被认为形成通过在Se中捕获电子而形成负空间电荷的Se和GaF 3等中的电子形成深阱陷阱的As被添加在与Te存在的区域相邻的区域中。此外，存在GaF 3等的区域中的膜的厚度比迄今采用的值更薄（不小于20，不大于90）。

12. 发明授权

US4626885A Photosensor having impurity concentration gradient 失效
标题翻译：具有杂质浓度梯度的光电传感器
公开(公告)号：US4626885A
公开(公告)日：1986-12-02
申请号：US518658
申请日：1983-07-29
申请人： Sachio Ishioka , Yoshinori Imamura , Tsuyoshi Uda , Yukio Takasaki , Chushirou Kusano , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai
发明人： Sachio Ishioka , Yoshinori Imamura , Tsuyoshi Uda , Yukio Takasaki , Chushirou Kusano , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai
IPC分类号： H01J29/45 , H01L31/0376 , H01L31/08 , H01L31/09 , H01J31/00 , H01L27/14 , H01L31/00
CPC分类号： H01L31/095 , H01J29/456 , H01L31/03762 , Y02E10/548
摘要： A photosensor including a transparent electrode for transmitting incident light and a photoconductive layer receiving light from the transparent electrode for performing photoelectric conversion, is disclosed in which the photoconductive layer is made of amorphous silicon, the amorphous silicon contains 5 to 30 atomic percent hydrogen and is doped with at least one selected from elements belonging to the groups II and III in such a manner that a region remote from the transparent electrode is higher in the concentration of the selected element than another region proximate to the transparent electrode, and a voltage is applied across the photoconductive layer so that a surface of the photoconductive layer facing the transparent electrode is at a positive potential with respect to another surface of the photoconductive layer opposite to the surface facing the transparent electrode.
摘要翻译：公开了一种光电传感器，其包括用于透射入射光的透明电极和从用于进行光电转换的透明电极接收光的光电导层，其中光电导层由非晶硅制成，非晶硅含有5至30原子％的氢，并且是掺杂有选自属于II和III族的元素中的至少一种，使得远离透明电极的区域的选择元素的浓度高于邻近透明电极的另一区域的浓度，并施加电压横跨光电导层，使得面向透明电极的光电导层的表面相对于与面向透明电极的表面相反的光电导层的另一表面处于正电位。

13. 发明授权

US4463279A Doped photoconductive film comprising selenium and tellurium 失效
标题翻译：包含硒和碲的掺杂光导膜
公开(公告)号：US4463279A
公开(公告)日：1984-07-31
申请号：US380779
申请日：1982-05-21
申请人： Keiichi Shidara , Kenkichi Tanioka , Teruo Uchida , Chushirou Kusano , Yukio Takasaki , Yasuhiko Nonaka , Eisuke Inoue
发明人： Keiichi Shidara , Kenkichi Tanioka , Teruo Uchida , Chushirou Kusano , Yukio Takasaki , Yasuhiko Nonaka , Eisuke Inoue
IPC分类号： H01L31/0248 , H01J29/45 , H01L31/08 , H01J31/38
CPC分类号： H01L31/08 , H01J29/456
摘要： A photoconductive film comprising a photo-conductive layer which is mainly made of selenium and a region added with tellurium in a direction of the thickness of the layer, wherein at least either one of a portion in a direction of hole flow of said region added with tellurium and a portion in the hole flow of another region which is located adjacent to said region added with tellurium is doped with at least one member selected from the group consisting of an oxide, a fluoride and elements which belong to the group II, III and VII, which are capable of forming a negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such oxide, fluoride and element include CuO, In.sub.2 O.sub.3, SeO.sub.2, V.sub.2 O.sub.5, MoO.sub.3, WO.sub.3, GaF.sub.2 InF.sub.3, Zn, Ga, In, Cl, I, Br and the like. The after image characteristic ascribable to incident light of high intensity can be significantly improved.
摘要翻译：一种光导电膜，其包含主要由硒制成的光导电层和在层的厚度方向上添加有碲的区域，其中所述区域的空穴流动方向上的一部分中的至少一个添加有碲和与添加有碲的所述区域相邻的另一区域的空穴流中的一部分掺杂有选自氧化物，氟化物和属于II，III族的元素中的至少一种，以及 VII能够在硒中形成负空间电荷，浓度平均为10〜1重量％。这种氧化物，氟化物和元素的典型实例包括CuO，In2O3，SeO2，V2O5，MoO3，WO3，GaF2 + L，InF3，Zn，Ga，In，Cl，I，Br等。可以显着提高归因于高强度入射光的后图像特性。

14. 发明授权

US4636682A Image pickup tube 失效
标题翻译：图像拾取管
公开(公告)号：US4636682A
公开(公告)日：1987-01-13
申请号：US491921
申请日：1983-05-05
申请人： Chushirou Kusano , Sachio Ishioka , Yoshinori Imamura , Yukio Takasaki , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai
发明人： Chushirou Kusano , Sachio Ishioka , Yoshinori Imamura , Yukio Takasaki , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai
IPC分类号： H01J29/36 , H01J29/45 , H01J31/38 , H01L31/08 , H01J31/00
CPC分类号： H01J29/456
摘要： A high velocity electron beam scanning negatively charge biased image pickup tube has a target which includes at least a transparent conductive layer, a photoconductor layer and a layer for secondary electron emission on a light-transmissive insulating substrate, and in which the transparent conductive layer is arranged on a light incidence side, the photoconductor layer being made of amorphous silicon.
摘要翻译：高速电子束扫描带负电荷偏压的图像拾取管具有至少包括透明导电层，光电导体层和在透光绝缘基板上用于二次电子发射的层的目标，并且其中透明导电层为布置在光入射侧，感光体层由非晶硅制成。

15. 发明授权

US4556817A Photoelectric conversion apparatus 失效
标题翻译：光电转换装置
公开(公告)号：US4556817A
公开(公告)日：1985-12-03
申请号：US547962
申请日：1983-11-02
申请人： Chushirou Kusano , Sachio Ishioka , Yoshinori Imamura , Yukio Takasaki , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai , Eiichi Maruyama
发明人： Chushirou Kusano , Sachio Ishioka , Yoshinori Imamura , Yukio Takasaki , Hirofumi Ogawa , Tatsuo Makishima , Tadaaki Hirai , Eiichi Maruyama
IPC分类号： H01J29/45 , H01L31/02 , H01J31/26
CPC分类号： H01J29/456 , H01J29/45
摘要： An image pickup tube of high velocity electron beam scanning and negatively charging system having a target including, on a transparent substrate, at least a transparent conductive film, a photoconductive layer, a layer for emitting secondary electrons, and stripe electrodes. The transparent substrate may be made of amorphous silicon.
摘要翻译：一种具有目标的高速电子束扫描和负电荷系统的图像拾取管，在透明基板上至少包括透明导电膜，光电导层，用于发射二次电子的层和条形电极。透明基板可以由非晶硅制成。

16. 发明授权

US4829345A Electronic device having light transmission system 失效
标题翻译：具有光传输系统的电子设备
公开(公告)号：US4829345A
公开(公告)日：1989-05-09
申请号：US857089
申请日：1986-04-29
申请人： Sachio Ishioka , Kazutaka Tsuji , Yukio Takasaki , Yasuharu Shimomoto , Hirokazu Matsubara , Tadaaki Hirai
发明人： Sachio Ishioka , Kazutaka Tsuji , Yukio Takasaki , Yasuharu Shimomoto , Hirokazu Matsubara , Tadaaki Hirai
IPC分类号： H01L27/00 , G02B6/12 , G02B6/43 , H01L27/15 , H01L31/12
CPC分类号： H04B10/801 , G02B6/12002 , G02B6/43 , H01L31/12
摘要： Within an electronic device having a plurality of circuit parts (such as a three-dimensional device), a light transmission system which transfers signals between the circuit parts by the use of light is provided.The light transmission system is formed of a light emitting source which emits light having a desired wavelength, a photoelectric conversion portion which absorbs the light and converts it into an electric signal, and a light traveling path which conveys the light emitted from the light emitting source to the photoelectric conversion portion.Further, each of the light emitting source, the light traveling path and the photoelectric conversion portion is formed of a superlattice structure in which a plurality of materials of unequal energy gaps are layered.
摘要翻译：在具有多个电路部分（例如三维装置）的电子装置中，提供了通过使用光在电路部分之间传送信号的光传输系统。光传输系统由发射具有期望波长的光的发光源，吸收光并将其转换为电信号的光电转换部分和从发光源发射的光传输的光行进路径到光电转换部分。此外，发光源，光行进路径和光电转换部分中的每一个由层叠不同能隙的多种材料的超晶格结构形成。

17. 发明授权

US4860093A Method and apparatus for driving a plurality of pick-up tubes having their cathodes supplied by a common negative potential 失效
标题翻译：用于驱动多个拾取管的方法和装置，其阴极由共同的负电位提供
公开(公告)号：US4860093A
公开(公告)日：1989-08-22
申请号：US143655
申请日：1988-01-13
申请人： Takashi Yamashita , Keiichi Shidara , Masaaki Aiba , Yukio Takasaki , Tadaaki Hirai
发明人： Takashi Yamashita , Keiichi Shidara , Masaaki Aiba , Yukio Takasaki , Tadaaki Hirai
IPC分类号： H04N5/228 , H04N9/09
CPC分类号： H04N5/228 , H04N9/09
摘要： The present invention relates to a method and an apparatus for driving image pick-up tubes in, particular, a color television camera or the like having more than one image pick-up tube and in particular to a method and an apparatus for driving image pick-up tubes in which the potentials of the cathode electrodes of the respective image pick-up tubes are set to the same common potential, the potential of the target electrode of at least one of the image pick-up tubes is set substantially to earth potential, target drive potentials are individually applied to the target electrodes of the other image pick-up tubes, and the target potential of each image pick-up tube is set to a value near the earth potential, so that a high S/N ratio is obtained. The driving appartatus can be miniaturized and easily driven. According to the invention, a capacitor, such as a chip capcitor or the like, with a low withstanding voltage can be used in a first-stage amplifier to amplify the video signal from the target electrode. This first-stage amplifier can be arranged near a signal output electrode of the target. Thus, the stray capacitance can be reduced.
摘要翻译：本发明涉及一种用于驱动图像拾取管的方法和装置，特别是具有多于一个图像拾取管的彩色电视摄像机等，特别涉及一种用于驱动图像拾取的方法和装置将各个图像拾取管的阴极的电位设定为相同的公共电位的至少一个摄像管的目标电极的电位基本上设定为接地电位的管将目标驱动电位分别施加到其他摄像管的目标电极，并且将每个摄像管的目标电位设置为接近地电位的值，使得高S / N比为获得。驾驶舱可以小型化，易于驾驶。根据本发明，可以在第一级放大器中使用诸如芯片电容器等具有低耐压的电容器来放大来自目标电极的视频信号。该第一级放大器可以布置在目标的信号输出电极附近。因此，可以减小杂散电容。

18. 发明授权

US4394749A Photoelectric device and method of producing the same 失效
标题翻译：光电器件及其制造方法
公开(公告)号：US4394749A
公开(公告)日：1983-07-19
申请号：US154999
申请日：1980-05-30
申请人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
发明人： Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai , Toru Baji , Hideaki Yamamoto , Yasuo Tanaka , Eiichi Maruyama , Sachio Ishioka
IPC分类号： H01L27/146 , G11C13/00
CPC分类号： H01L27/14665
摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.
摘要翻译：具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。无定形硫族化物材料在以下方面非常有用。在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

19. 发明授权

US4380557A Method of production of image pickup device 失效
标题翻译：图像拾取装置的制造方法
公开(公告)号：US4380557A
公开(公告)日：1983-04-19
申请号：US287554
申请日：1981-07-28
申请人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
发明人： Sachio Ishioka , Yasuharu Shimomoto , Yoshinori Imamura , Saburo Ataka , Yasuo Tanaka , Hirokazu Matsubara , Yukio Takasaki , Eiichi Maruyama
IPC分类号： G03G5/08 , B05D3/02 , B05D3/04 , H01J9/233 , H01L21/205 , H01L31/04 , H01L31/08 , H01L31/10
CPC分类号： H01J9/233
摘要： In preparing an image pickup device by using hydrogen-containing amorphous silicon for a photoconductive layer, a hydrogen-containing amorphous silicon layer is first formed and is then heat-treated at 100.degree. to 300.degree. C. The image pickup characteristics of the amorphous silicon layer are highly improved by this heat treatment. For example, the lag and dark current are reduced and the signal current-target voltage characteristic is improved. Especially excellent improving effects can be obtained when amorphous silicon characterized in that (1) the hydrogen content is 5 to 30 atomic %, (2) the optical forbidden band gap is 1.30 to 1.95 eV and (3) in the infrared absorption spectrum, the component of a wave number of 2000 cm.sup.-1 is observed larger than the component of a wave number of 2100 cm.sup.-1 is subjected to the above-mentioned heat treatment. The adhesion to the substrate is enhanced, and good image pickup characteristics can be obtained.
摘要翻译：在通过使用含氢非晶硅作为光电导层制备图像拾取装置时，首先形成含氢非晶硅层，然后在100℃至300℃下进行热处理。非晶硅的图像拾取特性通过这种热处理高度改善了层。例如，滞后和暗电流降低，信号电流 - 目标电压特性提高。当非晶硅的特征在于：（1）氢含量为5〜30原子％，（2）光学禁带宽为1.30〜1.95eV，（3）在红外吸收光谱中，特别优异的改善效果为观察到比2100cm -1的波数的分量更大的波数为2000cm -1的分量进行上述热处理。增强了与基板的粘附性，并且可以获得良好的图像拾取特性。

20. 发明授权

US5196702A Photo-sensor and method for operating the same 失效
标题翻译：光电传感器及其操作方法
公开(公告)号：US5196702A
公开(公告)日：1993-03-23
申请号：US824857
申请日：1991-12-11
申请人： Kazutaka Tsuji , Tadaaki Hirai , Yukio Takasaki , Haruo Itoh , Tetshuhiko Takahashi , Kenichi Okajima
发明人： Kazutaka Tsuji , Tadaaki Hirai , Yukio Takasaki , Haruo Itoh , Tetshuhiko Takahashi , Kenichi Okajima
IPC分类号： H04N5/32
CPC分类号： H04N5/32
摘要： An optically reading type photo-sensor for reading out an information signal of a signal light with a signal reading light includes a first photoconductor (101) and a second photoconductor (102) interposed between two electrodes (104 and 105); an intermediate region (103) disposed between those two photoconductors for storing and recombining carriers; and an optical source (107) for emitting a signal reading light for uninformalizing the potential in said second photoconductor (102), whereby a successive signal reading can be accomplished without any special preparations for the incidence of the signal light. The photo-sensor can be applied to a variety of imaging devices.
摘要翻译： PCT No.PCT / JP88 / 01073 Sec。 371日期1989年8月21日 102（e）日期1989年8月21日PCT提交1988年10月21日PCT公布。出版物WO89 / 04063 用于读出具有信号读取光的信号光的信息信号的光学读取型光电传感器包括插入在两个电极（104和105）之间的第一感光体（101）和第二感光体（102））; 设置在这两个光电导体之间的用于存储和重组载体的中间区域（103）以及用于发射用于对所述第二光电导体（102）中的电位进行非正规化的信号读取光的光源（107），由此可以在不对信号光的入射进行任何特别准备的情况下实现连续的信号读取。光电传感器可以应用于各种成像设备。

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