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11. 发明授权

US07281417B2 Method for evaluating quality of golf club head, method for conducting quality control of golf club head, method for manufacturing golf club head and golf club, golf club head, and golf club 失效
标题翻译：用于评估高尔夫球杆头质量的方法，用于进行高尔夫球杆头的质量控制的方法，制造高尔夫球杆头和高尔夫球杆的方法，高尔夫球杆头和高尔夫球杆
公开(公告)号：US07281417B2
公开(公告)日：2007-10-16
申请号：US10411234
申请日：2003-04-10
申请人： Hiroshi Saegusa , Kazunori Ono
发明人： Hiroshi Saegusa , Kazunori Ono
IPC分类号： A63C53/00 , A63B53/00
CPC分类号： A63B60/42 , A63B53/04 , A63B53/0466 , A63B2060/002
摘要： Evaluation of the durability or the coefficient of restitution of a golf club head 1 is performed by measuring a response signal of an impact surface 10 of a golf club head 1 when imparting a vibration to the impact surface 10, finding a value of the peak frequency of the first resonance frequency or the like located within a predetermined frequency range of the measured response signal, and finding the ratio of this peak frequency value with respect to a reference value. Further, control of the quality of the restitution characteristics in a initial state, or quality of the golf club head that deteriorates over time, is conducted by utilizing the evaluation results. The golf club head 1 is provided with a label 12 for displaying the peak frequency measured immediately after manufacture as an initial value. Further, in manufacturing a golf club, the quality of the golf club head immediately after manufacture is controlled by the peak frequency.
摘要翻译：高尔夫球杆头1的耐久性或恢复系数的评估是通过测量高尔夫球杆头1的冲击表面10的响应信号，当向冲击表面10施加振动时，发现峰值频率位于所测量的响应信号的预定频率范围内的第一共振频率等，以及找到该峰值频率值相对于参考值的比率。此外，通过利用评价结果来控制初始状态下的恢复特性的质量或高尔夫球杆头的质量随着时间变差而劣化。高尔夫球杆头1设置有用于将制造后立即测量的峰值频率显示为初始值的标签12。此外，在制造高尔夫球杆时，立即制造后的高尔夫球杆头的质量由峰值频率控制。

12. 发明授权

US07162913B2 Method of evaluating restitution characteristic of golf club, system for evaluating restitution characteristic, and golf club 失效
标题翻译：评估高尔夫球杆的恢复特性的方法，评估恢复特性的系统和高尔夫球杆
公开(公告)号：US07162913B2
公开(公告)日：2007-01-16
申请号：US10187891
申请日：2002-07-03
申请人： Hiroshi Saegusa , Kazunori Ono
发明人： Hiroshi Saegusa , Kazunori Ono
IPC分类号： G01L5/00 , A63B53/00
CPC分类号： G01N29/46 , A63B53/04 , A63B53/0466 , A63B60/42 , A63B2060/002 , G01N29/045
摘要： A method of evaluating restitution characteristics of a golf club head, a system for evaluating the restitution characteristics and a golf club, are provided in which a coefficient of restitution of a golf club head is inferred and obtained without disassembling the golf club by removing the golf club head away from a shaft and the coefficient of restitution may extremely easily be obtained for a short period of time. At first, an external force to a striking face of the golf club head is imparted to perform impact vibration. A response signal of the striking face under the impact vibration is acquired to obtain a resonant frequency of the striking face. A coefficient of restitution is calculated from the resonant frequency when the golf ball is struck by the striking face, whereby restitution characteristics of the golf club head are inferred and evaluated.
摘要翻译：提供了一种评估高尔夫球杆头的恢复特性的方法，用于评估恢复特性的系统和高尔夫球杆，其中通过移除高尔夫球杆来推断和获得高尔夫球杆头的恢复系数而不拆卸高尔夫球杆球杆头远离轴，并且在短时间内可以非常容易地获得恢复系数。首先，赋予高尔夫球杆头的击打面的外力进行冲击振动。获取冲击振动下的打击面的响应信号，以获得击打面的共振频率。当高尔夫球被击打面撞击时，从谐振频率计算恢复系数，由此推断和评估高尔夫球杆头的恢复特性。

13. 发明申请

US20110217635A1 METHOD OF MANUFACTURING TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造转移掩模的方法和制造半导体器件的方法
公开(公告)号：US20110217635A1
公开(公告)日：2011-09-08
申请号：US13122680
申请日：2010-10-08
申请人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
发明人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
IPC分类号： G03F1/00
CPC分类号： G03F1/46 , G03F1/54 , G03F1/80 , G03F1/82
摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.
摘要翻译：本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。铬基薄膜由含铬的材料制成。将具有200nm以下波长的曝光光施加到转印掩模。在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及通过蚀刻去除铬基薄膜。该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。

14. 发明授权

US06997035B2 Method and device for evaluating restitution characteristics of a golf club head 失效
标题翻译：用于评估高尔夫球杆头的恢复特性的方法和装置
公开(公告)号：US06997035B2
公开(公告)日：2006-02-14
申请号：US10820751
申请日：2004-04-09
申请人： Hiroshi Saegusa , Kazunori Ono
发明人： Hiroshi Saegusa , Kazunori Ono
IPC分类号： G01L25/00
CPC分类号： A63B60/42 , A63B53/04 , A63B53/0466 , A63B2060/002 , G01N3/30 , G01N3/405 , G01N29/045 , G01N29/12 , G01N29/46 , G01N2033/008 , G01N2203/001 , G01N2203/0039 , G01N2203/0083 , G01N2203/0246 , G01N2203/0688 , G01N2291/02827
摘要： A method for evaluating restitution characteristics of a golf club head with ease and high accuracy compared to conventional methods and devices. The method first acquires a resonance frequency of the impact surface in a mass added state, which is obtained by affixing a mass regulating member having a known mass to the impact surface, and then acquiring a resonance frequency of the impact surface in a non-mass added state, in which the mass regulating member is not affixed to the impact surface, by using a response signal of the impact surface due to the impact vibration; and next computing, by using the resonance frequencies acquired in the mass added state and the non-mass added state, a coefficient of restitution for the impact surface when the impact surface impacts a golf ball.
摘要翻译：与常规方法和装置相比，用于高精度地评估高尔夫球棒头的恢复特性的方法。该方法首先获得通过将具有已知质量的质量调节构件固定到冲击表面而获得的质量添加状态下的冲击表面的共振频率，然后以非质量获取冲击表面的共振频率通过使用由于冲击振动引起的冲击表面的响应信号，质量调节构件未固定到冲击表面的附加状态; 并且通过使用在质量添加状态和非质量相加状态下获取的共振频率，当撞击表面撞击高尔夫球时，冲击表面的恢复系数被计算。

15. 发明授权

US08658334B2 Transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device 有权
标题翻译：转印掩模，制造转印掩模的方法以及制造半导体器件的方法
公开(公告)号：US08658334B2
公开(公告)日：2014-02-25
申请号：US13501348
申请日：2010-10-08
申请人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
发明人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
IPC分类号： G03F1/50 , B08B3/00
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.
摘要翻译：提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。

16. 发明申请

US20130122407A1 REFLECTIVE MASK BLANK, METHOD OF MANUFACTURING THE SAME, AND REFLECTIVE MASK 有权
标题翻译：反光罩，其制造方法和反光掩模
公开(公告)号：US20130122407A1
公开(公告)日：2013-05-16
申请号：US13812627
申请日：2011-07-29
申请人： Masahiro Hashimoto , Kazunori Ono , Kenta Tsukagoshi , Tooru Fukui
发明人： Masahiro Hashimoto , Kazunori Ono , Kenta Tsukagoshi , Tooru Fukui
IPC分类号： G03F1/24
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F1/78 , Y10S430/143
摘要： To solve a problem of reduction in accumulated energy due to backward scattering, leading to degradation in CD linearity, which is caused when a generally used high-contrast resist is used in the manufacture of a reflective mask. A reflective mask blank for manufacturing a reflective mask includes a substrate, a multilayer reflective film which is formed on the substrate and adapted to reflect exposure light, and an absorber film which is formed on the multilayer reflective film and adapted to absorb the exposure light. A resist film for electron beam writing is formed on the absorber film and the contrast value γ of the resist film for electron beam writing is 30 or less.
摘要翻译：为了解决由于反向散射引起的累积能量的降低的问题，导致当在通常使用的高对比度抗蚀剂用于制造反射掩模时引起的CD线性的降低。用于制造反射掩模的反射掩模坯料包括基板，形成在基板上并适于反射曝光光的多层反射膜，以及形成在多层反射膜上并适于吸收曝光光的吸收膜。在吸收膜上形成用于电子束写入的抗蚀剂膜，并且用于电子束写入的抗蚀剂膜的对比度值γ为30以下。

17. 发明申请

US20120251931A1 TRANSFER MASK, METHOD OF MANUFACTURING A TRANSFER MASK, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：转移掩模，制造转移掩模的方法和制造半导体器件的方法
公开(公告)号：US20120251931A1
公开(公告)日：2012-10-04
申请号：US13501348
申请日：2010-10-08
申请人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
发明人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
IPC分类号： G03F1/00 , G03F7/20 , G03F1/76 , G03F1/46 , G03F1/26
CPC分类号： G03F1/32 , G03F1/54 , G03F1/80
摘要： Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×1018 atoms/cm3.
摘要翻译：提供一种转印掩模，其具有形成在设置在透明基板上的图案形成薄膜中的转印图案，并且适于施加具有200nm或更小的波长的曝光光。图案形成薄膜由含有铬以外的过渡金属的材料制成，膜中的铬含量小于1.0×1018原子/ cm3。

18. 发明授权

US08197993B2 Method of manufacturing transfer mask and method of manufacturing semiconductor device 有权
标题翻译：传输掩模的制造方法和制造半导体器件的方法
公开(公告)号：US08197993B2
公开(公告)日：2012-06-12
申请号：US13122680
申请日：2010-10-08
申请人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
发明人： Masahiro Hashimoto , Kazuya Sakai , Toshiyuki Suzuki , Kazunori Ono
IPC分类号： G03F1/00 , B08B3/00
CPC分类号： G03F1/46 , G03F1/54 , G03F1/80 , G03F1/82
摘要： The present invention is a method of manufacturing a transfer mask with use of a mask blank in which a thin film for pattern formation and a chromium-based thin film made of a material containing chromium are stacked on a transparent substrate in this order. The thin film for pattern formation is made of material containing silicon and a transition metal other than chromium. The chromium-based thin film is made of a material containing chromium. Exposure light having a wavelength of 200 nm or less is applied to the transfer mask. In the manufacturing method, the transfer mask is produced by performing, in the following order, a process of forming a resist film having a transfer pattern on the chromium-based thin film, a process of forming a transfer pattern in the chromium-based thin film with use of a mask of the resist film having the transfer pattern, a process of forming a transfer pattern in the thin film for pattern formation with use of a mask of the chromium-based thin film having the transfer pattern, and a process of removing the chromium-based thin film by etching. The manufacturing method further includes a cleaning process of at least one of alkali solution cleaning, hot water cleaning, and ozone-containing water cleaning on the produced transfer mask until a width of the transfer pattern of the thin film for pattern formation is reduced by 4 nm or a space width of the thin film for pattern formation is increased by 4 nm.
摘要翻译：本发明是一种使用掩模坯料制造转印掩模的方法，其中用于图案形成的薄膜和由含铬材料制成的铬基薄膜依次层叠在透明基板上。用于图案形成的薄膜由含有硅和除铬以外的过渡金属的材料制成。铬基薄膜由含铬的材料制成。将具有200nm以下波长的曝光光施加到转印掩模。在制造方法中，通过以下顺序，通过在铬系薄膜上形成具有转印图案的抗蚀剂膜的工序来制造转印掩模，在铬系薄膜中形成转印图案的工序使用具有转印图案的抗蚀剂膜的掩模的膜，使用具有转印图案的铬基薄膜的掩模在图案形成用薄膜中形成转印图案的工序，以及通过蚀刻去除铬基薄膜。该制造方法还包括在制造的转印掩模上进行碱溶液清洗，热水清洗和含臭氧水清洗中的至少一种的清洗处理，直到图案形成用薄膜的转印图案的宽度减少4 nm或用于图案形成的薄膜的空间宽度增加4nm。

19. 发明授权

US5934669A Sorter having non-sorting bin and multiple sorting bins, and sorting method used in sorter 失效
标题翻译：分拣机具有非分拣箱和多个分拣箱，以及分拣机中使用的分拣方法
公开(公告)号：US5934669A
公开(公告)日：1999-08-10
申请号：US861155
申请日：1997-05-21
申请人： Motonari Uchida , Kazunori Ono
发明人： Motonari Uchida , Kazunori Ono
IPC分类号： G03G15/00 , B65H39/11 , B65H39/10
CPC分类号： B65H39/11 , B65H2403/511 , B65H2408/113
摘要： A sorter includes a non-sorting paper exit, a sorting paper exit, a non-sorting bin and a bin assembly having a plurality of sorting bins. When a non-sorting mode is selected, papers is ejected from the non-sorting exit to the non-sorting bin which faces to the non-sorting exit. When a sorting mode is selected, papers are ejected from the sorting exit to the sorting bins each of which faces to the sorting exit by sequentially shifting the bin assembly. In this operation, the non-sorting bin is kept stationary while the papers are ejected to the upper sorting bins, and the non-sorting bin is shift together with the sorting bins while the paper are ejected to the lower sorting bins.
摘要翻译：分拣机包括非分拣纸出口，分拣纸出口，非分拣箱和具有多个分拣仓的仓组件。当选择非排序模式时，纸张从非排序出口排出到面向非分类出口的非分类箱。当选择排序模式时，纸张从排序出口排出到通过顺序地移动箱体组件而分别面向分类出口的分类箱。在该操作中，当纸张被排出到上部分类箱时，非分类箱保持静止，并且当纸张被排出到下部分类箱时，非分类箱与分类箱一起移动。

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