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11. 发明申请

US20130071995A1 Method of Manufacturing a Semiconductor Device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130071995A1
公开(公告)日：2013-03-21
申请号：US13234296
申请日：2011-09-16
申请人： Mei-Hsuan Lin , Chih-Kang Chao , Chih-Hsun Lin , Ling-Sung Wang
发明人： Mei-Hsuan Lin , Chih-Kang Chao , Chih-Hsun Lin , Ling-Sung Wang
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/8238 , H01L21/762 , H01L21/76224 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/66636 , H01L29/7848
摘要： A method of manufacturing a semiconductor device is disclosed. The exemplary method includes providing a substrate having a source region and a drain region. The method further includes forming a first recess in the substrate within the source region and a second recess in the substrate within the drain region. The first recess has a first plurality of surfaces and the second recess has a second plurality of surfaces. The method also includes epi-growing a semiconductor material in the first and second recesses and, thereafter, forming shallow isolation (STI) features in the substrate.
摘要翻译：公开了制造半导体器件的方法。该示例性方法包括提供具有源极区和漏极区的衬底。该方法还包括在源极区域内的衬底中形成第一凹槽，以及在漏极区域内的衬底中形成第二凹部。第一凹部具有第一多个表面，第二凹部具有第二多个表面。该方法还包括在第一和第二凹陷中外延生长半导体材料，然后在衬底中形成浅隔离（STI）特征。

12. 发明申请

US20120181657A1 Forming Metal-Insulator-Metal Capacitors Over a Top Metal Layer 有权
标题翻译：在顶部金属层上形成金属绝缘体金属电容器
公开(公告)号：US20120181657A1
公开(公告)日：2012-07-19
申请号：US13007777
申请日：2011-01-17
申请人： Kun-Mao Wu , Chih-Hsun Lin , Yu-Lung Yeh , Kuan-Chi Tsai
发明人： Kun-Mao Wu , Chih-Hsun Lin , Yu-Lung Yeh , Kuan-Chi Tsai
IPC分类号： H01L29/92
CPC分类号： H01L27/10852 , H01L21/7687 , H01L23/5223 , H01L23/5227 , H01L23/5283 , H01L23/53295 , H01L28/10 , H01L28/40 , H01L28/88 , H01L2924/0002 , H01L2924/00
摘要： A plurality of metal layers includes a top metal layer. An Ultra-Thick Metal (UTM) layer is disposed over the top metal layer, wherein no additional metal layer is located between the UTM layer and the top metal layer. A Metal-Insulator-Metal (MIM) capacitor is disposed under the UTM layer and over the top metal layer.
摘要翻译：多个金属层包括顶部金属层。在顶部金属层上设置超厚金属（UTM）层，其中在UTM层和顶部金属层之间不存在额外的金属层。金属 - 绝缘体 - 金属（MIM）电容器设置在UTM层之下和顶部金属层之上。

13. 发明授权

US07671554B2 Motor driving system 失效
标题翻译：电机驱动系统
公开(公告)号：US07671554B2
公开(公告)日：2010-03-02
申请号：US11958987
申请日：2007-12-18
申请人： Chia-Chang Lin , Chih-Hsun Lin
发明人： Chia-Chang Lin , Chih-Hsun Lin
IPC分类号： H02P6/00
CPC分类号： G05B19/19 , G05B2219/37415 , G05B2219/50133 , Y10S388/937
摘要： The present invention relates to a motor driving system. The motor driving system includes a motor, a transmission member, a follower member, a position-detecting light emitter, a position-detecting light receiver, and a positioning-status sensing element. The positioning-status sensing element includes a plurality of notches or openings. The positioning-status sensing element is moved between the position-detecting light emitter and the position-detecting light receiver such that a light beam emitted from the position-detecting light emitter is successively penetrated through the notches or openings to be received by the position-detecting light receiver. According to the light-receiving status of the position-detecting light receiver, the speed of the motor is reduced.
摘要翻译：电动机驱动系统技术领域本发明涉及电动机驱动系统。马达驱动系统包括马达，传动部件，从动部件，位置检测光发射器，位置检测光接收器和定位状态检测元件。定位状态检测元件包括多个凹口或开口。定位状态检测元件在位置检测光发射器和位置检测光接收器之间移动，使得从位置检测光发射器发射的光束依次穿过缺口或开口，检测光接收器。根据位置检测光接收器的光接收状态，电动机的速度降低。

14. 发明申请

US20090017270A1 DISC HAVING RELIEF PATTERN AND TRANSPRINT METHOD THEREOF 有权
标题翻译：具有缓解图案的盘片及其传输方法
公开(公告)号：US20090017270A1
公开(公告)日：2009-01-15
申请号：US11930243
申请日：2007-10-31
申请人： Chih-Hsun Lin
发明人： Chih-Hsun Lin
IPC分类号： B41M5/00 , B05D3/12 , B31F1/07
CPC分类号： B44C1/24 , G11B23/38 , G11B23/40 , Y10T428/21 , Y10T428/24802
摘要： A disc having a relief pattern and a transprint method thereof are provided. The transprint method for transprinting the relief pattern on a substrate of the disc includes the following steps. First, a transprint template is provided. A first surface of the transprint template has a complementary pattern corresponding to the relief pattern. Next, a pattern layer is formed on the substrate. Then, the transprint template is placed on and covers the pattern layer until the first surface of the transprint template closely contacts a second surface of the pattern layer, so that the relief pattern is formed on the second surface. Afterward, the pattern layer is cured by irradiation. Later, the transprint template is removed for exposing the second surface with the relief pattern.
摘要翻译：提供具有浮雕图案的盘片及其转印方法。用于将浮雕图案转印在盘的基片上的转印方法包括以下步骤。首先，提供一个转印模板。转印模板的第一表面具有对应于浮雕图案的互补图案。接下来，在基板上形成图案层。然后，将转印模板放置在并覆盖图案层，直到转印模板的第一表面紧密接触图案层的第二表面，使得浮雕图案形成在第二表面上。之后，图案层通过照射固化。之后，移除转印模板，以便用浮雕图案露出第二表面。

15. 发明授权

US08513143B2 Semiconductor structure and method of manufacturing 有权
标题翻译：半导体结构及制造方法
公开(公告)号：US08513143B2
公开(公告)日：2013-08-20
申请号：US13212469
申请日：2011-08-18
申请人： Mei-Hsuan Lin , Chih-Hsun Lin , Chih-Kang Chao , Ling-Sung Wang
发明人： Mei-Hsuan Lin , Chih-Hsun Lin , Chih-Kang Chao , Ling-Sung Wang
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L23/481 , H01L21/76802 , H01L21/76822 , H01L21/76825 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L2924/0002 , H01L2924/00
摘要： The present application discloses a method of manufacturing a semiconductor structure. According to at least one embodiment, a first etch stop layer is formed over a conductive feature and a substrate, and the conductive feature is positioned over the substrate. A second etch stop layer is formed over the first etch stop layer. A first etch is performed to form an opening in the second etch stop layer, and the opening exposes a portion of the first etch stop layer. A second etch is performed to extend the opening downwardly by removing a portion of the exposed first etch stop layer, and the extended opening exposes a portion of the conductive feature.
摘要翻译：本申请公开了一种制造半导体结构的方法。根据至少一个实施例，在导电特征和衬底之上形成第一蚀刻停止层，并且导电特征位于衬底上。在第一蚀刻停止层上形成第二蚀刻停止层。执行第一蚀刻以在第二蚀刻停止层中形成开口，并且开口暴露第一蚀刻停止层的一部分。执行第二蚀刻以通过去除暴露的第一蚀刻停止层的一部分向下延伸开口，并且延伸的开口暴露导电特征的一部分。

16. 发明授权

US08220513B1 Laminator with changeable rotation speed and heating temperature 失效
标题翻译：具有可变转速和加热温度的层压机
公开(公告)号：US08220513B1
公开(公告)日：2012-07-17
申请号：US13342651
申请日：2012-01-03
申请人： Chih-Hsun Lin , Yen-Te Lee , Qi-Feng Zou
发明人： Chih-Hsun Lin , Yen-Te Lee , Qi-Feng Zou
IPC分类号： B32B37/00
CPC分类号： B32B41/00 , B32B2309/02 , B32B2309/14 , B32B2429/00 , Y10T156/1741
摘要： The present invention relates to a laminator with changeable rotation speed and heating temperature including a first roller set, a second roller set, a transmission gear set, a speed changing gear set, a first driving device, a second driving device, an input interface, a controller and a heating device. A user selects an option of the input interface according to film thickness. The controller determines rotation speed and heating temperature of the first roller set and the second roller set according to the option. Then the controller controls the second driving device to move the speed changing gear set to alter the engagement between the speed changing gear set and the transmission gear set, as to modulate the rotational speed of the first roller set and the second roller set.
摘要翻译：本发明涉及具有可变转速和加热温度的层压机，包括第一辊组，第二辊组，变速齿轮组，变速齿轮组，第一驱动装置，第二驱动装置，输入接口，控制器和加热装置。用户根据胶片厚度选择输入界面的选项。控制器根据选项确定第一辊组和第二辊组的转速和加热温度。然后，控制器控制第二驱动装置移动变速齿轮组，以改变变速齿轮组和变速齿轮组之间的接合，以调制第一辊组和第二辊组的旋转速度。

17. 发明授权

US07846832B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07846832B2
公开(公告)日：2010-12-07
申请号：US11176924
申请日：2005-07-07
申请人： Kuan-Chi Tsai , Chih-Hsun Lin , Sheng-Wen Su , Shaw-Jang Liou
发明人： Kuan-Chi Tsai , Chih-Hsun Lin , Sheng-Wen Su , Shaw-Jang Liou
IPC分类号： H01L21/768 , H01L23/528 , H01L21/108
CPC分类号： H01L21/76814 , H01L21/76808 , H01L21/76831
摘要： Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
摘要翻译：半导体器件及其制造方法。这些器件包括衬底，第一蚀刻停止层，电介质层，开口和反扩散层。第一蚀刻停止层覆盖在基底上。电介质层覆盖在第一蚀刻停止层上。开口延伸穿过介电层和第一蚀刻停止层，并露出基板的一部分。防扩散层至少覆盖开口的侧壁，防止污染分子从至少第一蚀刻停止层扩散，其中抗扩散层分别比第一蚀刻停止层和电介质层更致密。

18. 发明授权

US07829167B2 Disc having relief pattern and transprint method thereof 有权
标题翻译：具有浮雕图案的盘片及其转印方法
公开(公告)号：US07829167B2
公开(公告)日：2010-11-09
申请号：US11930243
申请日：2007-10-31
申请人： Chih-Hsun Lin
发明人： Chih-Hsun Lin
IPC分类号： B32B3/02
CPC分类号： B44C1/24 , G11B23/38 , G11B23/40 , Y10T428/21 , Y10T428/24802
摘要： A disc having a relief pattern and a transprint method thereof are provided. The transprint method for transprinting the relief pattern on a substrate of the disc includes the following steps. First, a transprint template is provided. A first surface of the transprint template has a complementary pattern corresponding to the relief pattern. Next, a pattern layer is formed on the substrate. Then, the transprint template is placed on and covers the pattern layer until the first surface of the transprint template closely contacts a second surface of the pattern layer, so that the relief pattern is formed on the second surface. Afterward, the pattern layer is cured by irradiation. Later, the transprint template is removed for exposing the second surface with the relief pattern.
摘要翻译：提供具有浮雕图案的盘片及其转印方法。用于将浮雕图案转印在盘的基片上的转印方法包括以下步骤。首先，提供一个转印模板。转印模板的第一表面具有对应于浮雕图案的互补图案。接下来，在基板上形成图案层。然后，将转印模板放置在并覆盖图案层，直到转印模板的第一表面紧密接触图案层的第二表面，使得浮雕图案形成在第二表面上。之后，图案层通过照射固化。之后，移除转印模板，以便用浮雕图案露出第二表面。

19. 发明申请

US20090034374A1 COMPUTER SYSTEM AND METHOD CAPABLE OF AUTOMATICALLY DUPLICATING DATA INTO DISCS 失效
标题翻译：计算机系统和方法可以自动将数据重新分配到光盘中
公开(公告)号：US20090034374A1
公开(公告)日：2009-02-05
申请号：US11930240
申请日：2007-10-31
申请人： YAO-HSING HUANG , Chung-Yi Huang , Chih-Hsun Lin
发明人： YAO-HSING HUANG , Chung-Yi Huang , Chih-Hsun Lin
IPC分类号： G11B17/22
CPC分类号： G11B17/225 , G11B20/10 , G11B2020/10833
摘要： The invention relates to a computer system capable of automatically duplicating data into discs with automatically blank-disc-supplying. The invention can be implemented by software, hardware, or any of the combinations. Since the invention does not utilize a mechanical arm to move the discs, the structure of the invention saves space compared with a traditional disc duplicating machine; moreover, the cost is less than that of the prior art.
摘要翻译：本发明涉及一种能够自动将数据复制到具有自动空白盘供应的盘的计算机系统。本发明可以通过软件，硬件或任何组合来实现。由于本发明不利用机械臂来移动盘，与传统的盘片复制机相比，本发明的结构节省了空间; 此外，成本低于现有技术的成本。

20. 发明授权

US09343318B2 Salicide formation using a cap layer 有权
标题翻译：使用盖层的自杀剂形成
公开(公告)号：US09343318B2
公开(公告)日：2016-05-17
申请号：US13367989
申请日：2012-02-07
申请人： Mei-Hsuan Lin , Chih-Hsun Lin , Ching-Hua Chu , Ling-Sung Wang
发明人： Mei-Hsuan Lin , Chih-Hsun Lin , Ching-Hua Chu , Ling-Sung Wang
IPC分类号： H01L21/285 , H01L29/417 , H01L29/66 , H01L29/78
CPC分类号： H01L21/28518 , H01L21/02381 , H01L21/02425 , H01L21/02532 , H01L21/02617 , H01L21/0262 , H01L21/02631 , H01L21/28052 , H01L21/28097 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L29/41783 , H01L29/4933 , H01L29/4975 , H01L29/665 , H01L29/66507 , H01L29/7845 , H01L29/7848
摘要： A semiconductor device having a source feature and a drain feature formed in a substrate. The semiconductor device having a gate stack over a portion of the source feature and over a portion of the drain feature. The semiconductor device further having a first cap layer formed over substantially the entire source feature not covered by the gate stack, and a second cap layer formed over substantially the entire drain feature not covered by the gate stack. A method of forming a semiconductor device including forming a source feature and drain feature in a substrate. The method further includes forming a gate stack over a portion of the source feature and over a portion of the drain feature. The method further includes depositing a first cap layer over substantially the entire source feature not covered by the gate stack and a second cap layer over substantially the entire drain feature not covered by the gate stack.
摘要翻译：一种半导体器件，其具有形成在衬底中的源特征和漏极特征。该半导体器件在源特征的一部分上方并且在漏极特征的一部分上方具有栅极堆叠。所述半导体器件还具有形成在基本上整个源极特征上的第一覆盖层，其未被所述栅极堆叠覆盖，以及形成在基本上整个漏极特征（未被所述栅极堆叠覆盖）的第二覆盖层。一种形成半导体器件的方法，包括在衬底中形成源极特征和漏极特征。该方法还包括在源特征的一部分上并在漏极特征的一部分之上形成栅叠层。该方法还包括在未被栅极堆叠覆盖的基本上整个源特征上沉积第一盖层，以及在未被栅极堆叠覆盖的基本整个漏极特征上沉积第二盖层。

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