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11. 发明授权

US08344490B2 Semiconductor device having a high frequency electrode positioned with a via hole 有权
标题翻译：具有定位有通孔的高频电极的半导体器件
公开(公告)号：US08344490B2
公开(公告)日：2013-01-01
申请号：US12076033
申请日：2008-03-13
申请人： Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yonoda
发明人： Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yonoda
IPC分类号： H01L23/48
CPC分类号： H01L23/5226 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/5384 , H01L23/552 , H01L23/66 , H01L24/48 , H01L24/73 , H01L25/18 , H01L2224/0401 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05023 , H01L2224/05548 , H01L2224/05568 , H01L2224/05647 , H01L2224/13021 , H01L2224/16225 , H01L2224/16235 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/05099 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.
摘要翻译：公开了一种半导体器件，其包括支撑衬底，安装在支撑衬底的一侧的第一半导体元件，包括安装在支撑衬底一侧的高频电极的第二半导体元件，通孔相对于高频电极设置在支撑基板上，以及外部连接电极，其设置在相对于通孔的支撑基板的另一侧。

12. 发明申请

US20080174001A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080174001A1
公开(公告)日：2008-07-24
申请号：US12076033
申请日：2008-03-13
申请人： Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yoneda
发明人： Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yoneda
IPC分类号： H01L23/498
CPC分类号： H01L23/5226 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/5384 , H01L23/552 , H01L23/66 , H01L24/48 , H01L24/73 , H01L25/18 , H01L2224/0401 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05023 , H01L2224/05548 , H01L2224/05568 , H01L2224/05647 , H01L2224/13021 , H01L2224/16225 , H01L2224/16235 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/05099 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.
摘要翻译：公开了一种半导体器件，其包括支撑衬底，安装在支撑衬底的一侧的第一半导体元件，包括安装在支撑衬底一侧的高频电极的第二半导体元件，通孔相对于高频电极设置在支撑基板上，以及外部连接电极，其设置在相对于通孔的支撑基板的另一侧。

13. 发明授权

US07759246B2 Semiconductor device having a plurality of semiconductor chips and method for manufacturing the same 有权
标题翻译：具有多个半导体芯片的半导体装置及其制造方法
公开(公告)号：US07759246B2
公开(公告)日：2010-07-20
申请号：US11477550
申请日：2006-06-30
申请人： Hirohisa Matsuki , Yoshitaka Aiba , Mitsutaka Sato , Tadahiro Okamato
发明人： Hirohisa Matsuki , Yoshitaka Aiba , Mitsutaka Sato , Tadahiro Okamato
IPC分类号： H01L29/41 , H01L23/52
CPC分类号： H01L24/11 , H01L23/3114 , H01L23/5389 , H01L24/16 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/82 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05026 , H01L2224/05548 , H01L2224/05571 , H01L2224/05573 , H01L2224/056 , H01L2224/12105 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/73209 , H01L2224/73217 , H01L2224/73265 , H01L2224/73267 , H01L2224/82039 , H01L2224/92 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06586 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/00014 , H01L2224/82 , H01L2224/48227 , H01L2924/00 , H01L2924/00012 , H01L2924/00011 , H01L2224/85 , H01L2224/83 , H01L2224/81 , H01L2224/05124 , H01L2224/05147 , H01L2224/03
摘要： A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).
摘要翻译：一种半导体器件包括在一个表面上具有第一端子（7）的第一半导体芯片（5），大于第一半导体芯片（5）的第二半导体芯片（1a），并且第一半导体芯片（5）并且在一个表面上具有第二端子（3），形成在第二半导体芯片（1a）上以覆盖第一半导体芯片（5）的绝缘层（10），形成在第二半导体芯片在所述第一半导体芯片（5）的至少周边区域上具有绝缘层（10），在所述孔（10a）的内周面和底面上形成为膜状的通路（11a），并且与所述第二端子 3），形成在绝缘层（10）的上表面上的布线图案（11b）和形成在布线图案（11b）上的外部端子（14）。

14. 发明授权

US06586273B2 Semiconductor device manufacturing method having a step of applying a copper foil on a substrate as a part of a wiring connecting an electrode pad to a mounting terminal 有权
公开(公告)号：US06586273B2
公开(公告)日：2003-07-01
申请号：US09866660
申请日：2001-05-30
申请人： Yoshitaka Aiba , Mitsutaka Sato
发明人： Yoshitaka Aiba , Mitsutaka Sato
IPC分类号： H01L2144
CPC分类号： H01L24/13 , H01L21/565 , H01L23/3107 , H01L23/3114 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/94 , H01L2224/02166 , H01L2224/0231 , H01L2224/02313 , H01L2224/02319 , H01L2224/0233 , H01L2224/02333 , H01L2224/0236 , H01L2224/024 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/0558 , H01L2224/05644 , H01L2224/11334 , H01L2224/114 , H01L2224/116 , H01L2224/13021 , H01L2224/131 , H01L2224/16 , H01L2224/274 , H01L2224/27436 , H01L2924/00013 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1067 , H01L2924/12042 , H01L2924/3011 , H01L2224/13099 , H01L2224/05552 , H01L2924/00
摘要： A method of manufacturing a semiconductor device is provided. The method comprises a wire-forming step of forming a wiring on a substrate having an electrode pad so as to connect the electrode pad to a mounting terminal. The wire-forming step includes the steps of: applying a metal foil to the substrate by providing an adhesive therebetween; patterning the metal foil into a predetermined pattern so as to form the wiring; and connecting the wiring to the electrode pad electrically.

15. 发明申请

US20060246623A1 Semiconductor device having a plurality of semiconductor chips and method for manufacturing the same 有权
公开(公告)号：US20060246623A1
公开(公告)日：2006-11-02
申请号：US11477550
申请日：2006-06-30
申请人： Hirohisa Matsuki , Yoshitaka Aiba , Mitsutaka Sato , Tadahiro Okamato
发明人： Hirohisa Matsuki , Yoshitaka Aiba , Mitsutaka Sato , Tadahiro Okamato
IPC分类号： H01L21/00
CPC分类号： H01L24/11 , H01L23/3114 , H01L23/5389 , H01L24/16 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/82 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05026 , H01L2224/05548 , H01L2224/05571 , H01L2224/05573 , H01L2224/056 , H01L2224/12105 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/73209 , H01L2224/73217 , H01L2224/73265 , H01L2224/73267 , H01L2224/82039 , H01L2224/92 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06586 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/00014 , H01L2224/82 , H01L2224/48227 , H01L2924/00 , H01L2924/00012 , H01L2924/00011 , H01L2224/85 , H01L2224/83 , H01L2224/81 , H01L2224/05124 , H01L2224/05147 , H01L2224/03
摘要： A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).

16. 发明授权

US06967399B2 Semiconductor device manufacturing method having a step of applying a copper foil on a substrate as a part of a wiring connecting an electrode pad to a mounting terminal 失效
标题翻译：作为将电极焊盘与安装端子连接的布线的一部分，在基板上涂敷铜箔的工序的半导体装置的制造方法
公开(公告)号：US06967399B2
公开(公告)日：2005-11-22
申请号：US10443837
申请日：2003-05-23
申请人： Yoshitaka Aiba , Mitsutaka Sato
发明人： Yoshitaka Aiba , Mitsutaka Sato
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/60 , H01L23/12 , H01L23/31 , H01L23/48 , H01L23/485 , H01L21/44
CPC分类号： H01L24/13 , H01L21/565 , H01L23/3107 , H01L23/3114 , H01L23/562 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/94 , H01L2224/02166 , H01L2224/0231 , H01L2224/02313 , H01L2224/02319 , H01L2224/0233 , H01L2224/02333 , H01L2224/0236 , H01L2224/024 , H01L2224/0401 , H01L2224/05548 , H01L2224/05567 , H01L2224/0558 , H01L2224/05644 , H01L2224/11334 , H01L2224/114 , H01L2224/116 , H01L2224/13021 , H01L2224/131 , H01L2224/16 , H01L2224/274 , H01L2224/27436 , H01L2924/00013 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/1067 , H01L2924/12042 , H01L2924/3011 , H01L2224/13099 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device including a semiconductor element having an electrode pad, a mounting terminal for mounting a substrate, an adhesive layer provided on the semiconductor element, and a wiring electrically connecting the electrode pad to the mounting terminal. The wiring includes a metal foil and a metal film layer. The entire metal foil is in contact with the adhesive layer, and the metal film layer is in contact with the electrode pad.
摘要翻译：一种半导体器件，包括具有电极焊盘的半导体元件，用于安装衬底的安装端子，设置在半导体元件上的粘合层，以及将电极焊盘电连接到安装端子的布线。布线包括金属箔和金属膜层。整个金属箔与粘合剂层接触，并且金属膜层与电极焊盘接触。

17. 发明授权

US06909181B2 Light signal processing system 失效
标题翻译：光信号处理系统
公开(公告)号：US06909181B2
公开(公告)日：2005-06-21
申请号：US10097815
申请日：2002-03-15
申请人： Yoshitaka Aiba , Hirohisa Matsuki , Mitsutaka Sato
发明人： Yoshitaka Aiba , Hirohisa Matsuki , Mitsutaka Sato
IPC分类号： H01L23/29 , H01L21/56 , H01L21/60 , H01L23/28 , H01L23/31 , H01L23/485 , H05K3/28 , H05K3/32 , H05K3/34 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H05K3/3436 , H01L23/3114 , H01L24/11 , H01L24/13 , H01L2224/05023 , H01L2224/05568 , H01L2224/11 , H01L2224/1134 , H01L2224/13 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/13164 , H01L2224/16 , H01L2224/73104 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/3025 , H01L2924/351 , H05K2201/0129 , H05K2201/10977 , Y02P70/613 , H01L2924/00015 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： There are provided a sealing insulating film that is formed on a substrate and melted at a first heating temperature to have a flowability, and external terminals that are formed on the substrate, and connected to other electronic device at a second heating temperature higher than the first heating temperature, and surrounded by the sealing insulating film.
摘要翻译：提供了一种形成在基板上并在第一加热温度下熔化以具有流动性的密封绝缘膜，以及形成在基板上的外部端子，并且在比第一加热温度高的第二加热温度下连接到其它电子器件加热温度，并被密封绝缘膜包围。

18. 发明申请

US20050001329A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050001329A1
公开(公告)日：2005-01-06
申请号：US10860657
申请日：2004-06-04
申请人： Hirohisa Matsuki , Yoshitaka Aiba , Mitsutaka Sato , Tadahiro Okamato
发明人： Hirohisa Matsuki , Yoshitaka Aiba , Mitsutaka Sato , Tadahiro Okamato
IPC分类号： H01L21/60 , H01L23/12 , H01L23/31 , H01L23/538 , H01L25/04 , H01L25/065 , H01L23/48
CPC分类号： H01L24/11 , H01L23/3114 , H01L23/5389 , H01L24/16 , H01L24/24 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/82 , H01L24/94 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2224/05001 , H01L2224/05026 , H01L2224/05548 , H01L2224/05571 , H01L2224/05573 , H01L2224/056 , H01L2224/12105 , H01L2224/13099 , H01L2224/16145 , H01L2224/16225 , H01L2224/24226 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48145 , H01L2224/73209 , H01L2224/73217 , H01L2224/73265 , H01L2224/73267 , H01L2224/82039 , H01L2224/92 , H01L2224/92244 , H01L2224/94 , H01L2224/97 , H01L2225/06506 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06541 , H01L2225/06586 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/12042 , H01L2924/15311 , H01L2924/1532 , H01L2924/181 , H01L2924/00014 , H01L2224/82 , H01L2224/48227 , H01L2924/00 , H01L2924/00012 , H01L2924/00011 , H01L2224/85 , H01L2224/83 , H01L2224/81 , H01L2224/05124 , H01L2224/05147 , H01L2224/03
摘要： A semiconductor device includes a first semiconductor chip (5) having a first terminal (7) on one surface, a second semiconductor chip (1a) which is larger than the first semiconductor chip (5) and on which the first semiconductor chip (5) is stacked and which has a second terminal (3) on one surface, an insulating layer (10) formed on a second semiconductor chip (1a) to cover the first semiconductor chip (5), a plurality of holes (10a) formed in the insulating layer (10) on at least a peripheral area of the first semiconductor chip (5), a via (11a) formed like a film on inner peripheral surfaces and bottom surfaces of the holes (10a) and connected electrically to the second terminal (3) of the second semiconductor chip (1a), a wiring pattern (11b) formed on an upper surface of the insulating layer (10), and an external terminal (14) formed on the wiring pattern (11b).
摘要翻译：一种半导体器件包括在一个表面上具有第一端子（7）的第一半导体芯片（5），大于第一半导体芯片（5）的第二半导体芯片（1a），并且第一半导体芯片（5）并且在一个表面上具有第二端子（3），形成在第二半导体芯片（1a）上以覆盖第一半导体芯片（5）的绝缘层（10），形成在第二半导体芯片在所述第一半导体芯片（5）的至少周边区域上具有绝缘层（10），在所述孔（10a）的内周面和底面上形成为膜状的通路（11a），并且与所述第二端子 3），形成在绝缘层（10）的上表面上的布线图案（11b）和形成在布线图案（11b）上的外部端子（14）。

19. 发明申请

US20060186524A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060186524A1
公开(公告)日：2006-08-24
申请号：US11136563
申请日：2005-05-25
申请人： Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yoneda
发明人： Yoshitaka Aiba , Tetsuya Fujisawa , Yoshiyuki Yoneda
IPC分类号： H01L23/48
CPC分类号： H01L23/5226 , H01L23/3128 , H01L23/49816 , H01L23/49827 , H01L23/5384 , H01L23/552 , H01L23/66 , H01L24/48 , H01L24/73 , H01L25/18 , H01L2224/0401 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05023 , H01L2224/05548 , H01L2224/05568 , H01L2224/05647 , H01L2224/13021 , H01L2224/16225 , H01L2224/16235 , H01L2224/16238 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48235 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/15174 , H01L2924/15184 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2224/05099 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.
摘要翻译：公开了一种半导体器件，其包括支撑衬底，安装在支撑衬底的一侧的第一半导体元件，包括安装在支撑衬底一侧的高频电极的第二半导体元件，通孔相对于高频电极设置在支撑基板上，以及外部连接电极，其设置在相对于通孔的支撑基板的另一侧。

20. 发明授权

US07602055B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07602055B2
公开(公告)日：2009-10-13
申请号：US11390200
申请日：2006-03-28
申请人： Keiji Nosaka , Yoshitaka Aiba
发明人： Keiji Nosaka , Yoshitaka Aiba
IPC分类号： H01L23/02
CPC分类号： H01L23/3114 , H01L21/561 , H01L23/24 , H01L24/10 , H01L2924/01078 , H01L2924/01079 , H01L2924/3025
摘要： A semiconductor device with a WLP structure that enables the improvement of heat resistance. A dam layer which spreads over a PI film and an Si substrate for a chip is formed between the Si substrate and a sealing resin so as to surround the chip on all sides. A material for the dam layer is selected so that good adhesion will be obtained between the dam layer and the Si substrate, between the dam layer and the PI film, and between the dam layer and the sealing resin. As a result, even if a crack appears at a portion on a side of the semiconductor device where the Si substrate and the sealed resin are joined in a heating environment, the crack does not run inside the dam layer. This prevents the peeling of the sealing resin or peeling inside the chip and the performance of the semiconductor device is maintained.
摘要翻译：具有能够提高耐热性的WLP结构的半导体器件。在Si衬底和密封树脂之间形成有在PI膜上形成的阻挡层和用于芯片的Si衬底，以便在所有侧面上包围芯片。选择用于坝层的材料，使得在坝层和Si衬底之间，在阻挡层和PI膜之间以及在坝层和密封树脂之间将获得良好的粘合性。结果，即使在Si基板和密封树脂在加热环境下接合的半导体器件的一侧的部分处出现裂纹，裂纹也不会在堤层内部流动。这防止了密封树脂的剥离或芯片内的剥离，并且保持了半导体器件的性能。

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