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    • 14. 发明申请
    • ZOOM LENS LENS-BARREL AND IMAGING APPARATUS
    • 变焦镜头镜头和成像装置
    • US20070229991A1
    • 2007-10-04
    • US11561432
    • 2006-11-20
    • Hiroshi TakenakaMitsuru Shinohara
    • Hiroshi TakenakaMitsuru Shinohara
    • G02B7/02
    • G02B7/102
    • A zoom lens lens-barrel is capable of stabilizing movement of a lens holding frame along an optical axis, ensuring retraction of the lens-barrel into the main body, and reducing the size of the zoom lens lens-barrel. A zoom lens lens-barrel which supports at least one of a plurality of lenses in a movable manner along an optical axis direction comprises a pair of first guide shafts provided parallel to an optical axis Z direction which support outer periphery of a first lens frame and a second lens frame and a pair of second guide shafts provided parallel to the optical axis Z direction and at a different phase position in the lens-barrel plane than the pair of first guide shafts, which support the outer periphery of a third lens frame, a fourth lens frame, and a fifth lens frame.
    • 变焦透镜镜筒能够稳定透镜保持框架沿光轴的移动,确保镜筒回缩到主体中,并减小变焦镜头镜筒的尺寸。 沿着光轴方向可移动地支撑多个透镜中的至少一个透镜的变焦镜头镜筒包括平行于支撑第一透镜框的外周的光轴Z方向设置的一对第一引导轴, 第二透镜框和一对平行于光轴Z方向并且在透镜镜筒平面中与支撑第三透镜框的外周的一对第一引导轴不同的相位位置设置的第二引导轴, 第四透镜框和第五透镜框。
    • 15. 发明授权
    • Method for producing semiconductor integrated circuit
    • 半导体集成电路的制造方法
    • US06329262B1
    • 2001-12-11
    • US09256738
    • 1999-02-24
    • Takeshi FukudaHiroshi TakenakaHidetoshi FurukawaTakeshi FukuiDaisuke Ueda
    • Takeshi FukudaHiroshi TakenakaHidetoshi FurukawaTakeshi FukuiDaisuke Ueda
    • H01L2162
    • H01L27/0658H01L27/0802
    • A semiconductor integrated circuit includes a thermal resistor which is made of a tungsten silicon nitride containing at least about 5% by weight of silicon and formed on a semiconductor substrate directly or via an insulating film. The semiconductor integrated circuit is produced by a method including the steps of: forming a tungsten silicide nitride film on a semiconductor substrate; patterning the tungsten silicide nitride film in a predetermined pattern to form a thermal resistor; and forming a pair of electrodes to be connected to the thermal resistor. The semiconductor integrated circuit is provided so as to have a predetermined resistance by measuring electric characteristics of the semiconductor integrated circuit; obtaining a difference between the measured electric characteristics and desired electric characteristics to calculate a required adjusting amount of a resistance of the thermal resistor; and adjusting the resistance of the thermal resistor by the adjusting amount through heating of the thermal resistor with electric power.
    • 半导体集成电路包括由包含至少约5重量%的硅的钨硅氮化物制成的热电阻器,并且直接或经由绝缘膜形成在半导体衬底上。 半导体集成电路通过包括以下步骤的方法制造:在半导体衬底上形成硅化钨化硅膜; 以预定图案图案化硅化钨氮化膜以形成热电阻; 并形成一对要连接到热电阻器的电极。 半导体集成电路通过测量半导体集成电路的电特性而具有预定的电阻; 获得所测量的电特性和所需电特性之间的差以计算热敏电阻的电阻的所需调整量; 并且通过用电力加热热敏电阻器来调整热敏电阻的电阻达到调节量。
    • 20. 发明授权
    • Hot-repair mix comprising p-alkylphenols as fluidizing agents
    • 热修复混合物包含对烷基酚作为流化剂
    • US6120593A
    • 2000-09-19
    • US214011
    • 1998-12-17
    • Hiroshi TakenakaShuzo HoritaToshihiko AkizukiYoshiaki Osaki
    • Hiroshi TakenakaShuzo HoritaToshihiko AkizukiYoshiaki Osaki
    • C04B35/01C04B35/043C04B35/66F27D1/16C08L95/00
    • C04B35/66C04B35/013C04B35/043F27D1/1642
    • The hot repair mix according to the present invention comprises p-alkylphenol as an auxiliary fluidizing agent in an amount of 1 to 20 weight parts and a material to form carbon bond in hot working process in an amount of 5 to 40 weight parts to 100 weight parts of a refractory material. It has satisfactory properties such as spreading property, hardenability, adhesive property, property of the finished portion in hot working process, and this leads to improvement of durability of the baking material. Moreover, there is no change over time such as solidification, sedimentation separation, etc. in summer season, and it can be easily transported and stored. Because of easy handling and good workability of this material, baking operation can be accomplished within short time, and it is very useful as a hot repair mix for repairing various types of refinery furnaces, molten metal containers, etc. in hot working process.
    • PCT No.PCT / JP98 / 01899 Sec。 371日期1998年12月17日第 102(e)日期1998年12月17日PCT提交1998年4月24日PCT公布。 第WO98 / 50321号公报 日期1998年11月12日根据本发明的热修复混合物包含作为辅助流化剂的对烷基苯酚,其量为1至20重量份,并且在热加工过程中以5至40的量形成碳键的材料 重量份至100重量份的耐火材料。 其具有令人满意的性能,如扩散性,淬透性,粘合性,热加工过程中成品部分的性能,这导致烘烤材料的耐久性得到改善。 此外,夏季也不会有固化,沉淀分离等时间的变化,易于运输和储存。 由于这种材料易于处理和良好的可加工性,烘烤操作可以在短时间内完成,并且作为在热加工过程中修复各种类型的炼油炉,熔融金属容器等的热修复混合物是非常有用的。