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    • 13. 发明授权
    • Laser bar locking apparatus
    • 激光棒锁定装置
    • US06879620B2
    • 2005-04-12
    • US10773270
    • 2004-02-09
    • Noboru Oshima
    • Noboru Oshima
    • H01L21/205H01S5/028H01S3/08
    • H01S5/0281
    • A semiconductor laser chip has an active layer, an allover electrode forming a lower face of the laser chip and a light emitting end surface of the laser chip. A Si thin film is formed on the light emitting end surface of the laser chip. An upper Si thin film is formed on an upper portion of the light emitting end surface and a lower Si thin film is formed on a lower portion thereof. The lower Si thin film is smaller in thickness than the upper Si thin film. Smaller thickness of the lower Si thin film prevents a component of the allover electrode from diffusing into the upper Si thin film that covers the active layer. Thus, decrease of a maximum optical output value is prevented, and reliability of the laser chips is increased.
    • 半导体激光芯片具有活性层,形成激光芯片的下表面的全电极和激光芯片的发光端面。 在激光芯片的发光端面上形成Si薄膜。 在发光端面的上部形成上部Si薄膜,在其下部形成有下部Si薄膜。 较低的Si薄膜的厚度小于上部Si薄膜。 下部Si薄膜的厚度越小,防止全电极的成分扩散到覆盖有源层的上部Si薄膜。 因此,防止了最大光输出值的减小,激光芯片的可靠性提高。