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11. 发明申请

US20070006943A1 DEVICE FOR GENERATING NANOSTRUCTURES 有权
标题翻译：用于生成纳米结构的装置
公开(公告)号：US20070006943A1
公开(公告)日：2007-01-11
申请号：US11532314
申请日：2006-09-15
申请人： Jian Lu , Ke Lu
发明人： Jian Lu , Ke Lu
IPC分类号： C23C8/20 , C23C8/30
CPC分类号： C23C8/02 , C21D7/06 , C21D2201/03 , Y10T29/479
摘要： The present invention concerns a method for generating nanostructures in order to obtain in an area on the surface of a metal piece (10) a nanostructured layer of defined thickness, characterized in that it comprises: a step for projecting onto an impact point in the area of the surface of the piece (10) to be treated, for a given duration, at a given speed and at variable incidences at the same impact point, a given quantity of perfectly spherical balls (22) of given dimensions, reused continuously during the projection; repetition of the preceding step with a shift of the impact point so that the impact points as a group cover the entire surface of the piece to be treated; a step for treatment by diffusion of chemical compounds into the nanostructured layer generated during the step for implementing the method for generating nanostructures.
摘要翻译：本发明涉及一种用于产生纳米结构的方法，以便在金属片（10）的表面上获得具有规定厚度的纳米结构层的区域，其特征在于，其包括：用于投影到该区域中的冲击点上的步骤（10）的待处理表面，给定的持续时间，给定的速度和相同的冲击点处的可变的发生量，给定量的具有给定尺寸的完美球形球（22）在投影; 以冲击点的移动重复前一步骤，使得作为一组的冲击点覆盖待处理的整个表面; 通过化学化合物扩散到在实施用于产生纳米结构的方法的步骤期间产生的纳米结构层中进行处理的步骤。

12. 发明申请

US20060021878A1 Nano icrystals copper material with super high strength and conductivity and method of preparing thereof 有权
标题翻译：具有超高强度和导电性的纳米晶体铜材料及其制备方法
公开(公告)号：US20060021878A1
公开(公告)日：2006-02-02
申请号：US10532674
申请日：2003-10-16
申请人： Lei Lu , Xiao Si , Yongfeng Shen , Ke Lu
发明人： Lei Lu , Xiao Si , Yongfeng Shen , Ke Lu
IPC分类号： C25D15/00 , C25D5/18
CPC分类号： C25D1/04 , C22C1/00
摘要： The present invention relates to a nanocrystalline metallic material, particularly to nano-twin copper material with ultrahigh strength and high electrical conductivity and its preparation method. High-purity polycrystalline Cu material with a microstructure of roughly equiaxed submicron-sized grains (300-1000 nm) has been produced by pulsed electrodeposition technique, by which high density of growth-in twins with nano-scale twin spacing were induced in the grains. Inside each grain, there are high densities of growth-in twin lamellae. The twin lamellae with the same orientations are inter-parallel, and the twin spacing ranges from several nanometers to 100 nm with a length of 100-500 nm. This Cu material invented has more excellent performance than existing ones. The tensile yield strength and ultimate strength of the present Cu material at room-temperature can be as high as 900 MPa and 1086 MPa, respectively, and such a high tensile strength can not be achieved for the Cu materials with the same chemical composition prepared by any traditional methods. Meanwhile, the present Cu sample also keeps a good electrical conductivity, for example, the room-temperature resistivity is (1.75±0.02)×10−8 Ω·m, corresponding to 96% IACS, which is close to that of the conventional coarse-grained Cu.
摘要翻译：本发明涉及纳米晶体金属材料，特别涉及具有超高强度和高导电性的纳米双铜材料及其制备方法。通过脉冲电沉积技术制备了具有大致等轴亚微米尺寸（300-1000nm）微观结构的高纯度多晶Cu材料，通过该技术，在晶粒中诱导出具有纳米尺度双间隔的高密度生长双胞胎。在每个谷物里面都有高密度的生长 - 双层薄片。具有相同取向的双层板是相互平行的，并且双间隔范围为几纳米至100nm，长度为100-500nm。这种发明的铜材料比现有的材料具有更优异的性能。本发明Cu材料在室温下的拉伸屈服强度和极限强度分别高达900MPa和1086MPa，对于具有相同化学成分的Cu材料，不能实现高拉伸强度，任何传统的方法。同时，本发明的Cu样品也保持良好的导电性，例如，室温电阻率为（1.75±0.02）×10 -8Ω·m，对应于96％IACS，其接近与常规粗粒度Cu的相同。

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