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11. 发明申请

US20050101039A1 Apparatus and method for stacking laser bars for uniform facet coating 有权
标题翻译：用于堆叠用于均匀面涂层的激光棒的装置和方法
公开(公告)号：US20050101039A1
公开(公告)日：2005-05-12
申请号：US10695641
申请日：2003-10-27
申请人： John Chen , Chun Lei , Robert Shih
发明人： John Chen , Chun Lei , Robert Shih
IPC分类号： H01L21/00
CPC分类号： H01S5/4025 , H01S5/028 , H01S5/405
摘要： An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a plurality of photonic devices and spacer bars together into a stack. Optionally, spaced apart photonic device supports can be placed on the base between the rail portions to lift the photonic devices off of the surface of the base. The apparatus can also include a clamping system to hold the stack in place so that a vapor deposition process can be used to apply coatings to the photonic devices. In one exemplary embodiment, the photonic devices can be laser bars.
摘要翻译：公开了一种用于堆叠光子器件的装置。设备可以包括设置在基座上的底座，第一和第二间隔开的轨道部分，以及设置在轨道部分之间的底座上的真空引导件，用于形成将多个光子器件和间隔杆拉到一起的真空梯度，。可选地，间隔开的光子器件支撑件可以放置在轨道部分之间的基部上，以将光子器件提升离开基座的表面。该设备还可以包括夹持系统以将堆叠保持就位，使得可以使用气相沉积工艺将涂层施加到光子器件。在一个示例性实施例中，光子器件可以是激光条。

12. 发明授权

US06301281B1 Semiconductor laser having co-doped distributed bragg reflectors 有权
标题翻译：具有共掺杂分布布拉格反射器的半导体激光器
公开(公告)号：US06301281B1
公开(公告)日：2001-10-09
申请号：US09144355
申请日：1998-08-31
申请人： Hongyu Deng , Xiaozhong Wang , Chun Lei
发明人： Hongyu Deng , Xiaozhong Wang , Chun Lei
IPC分类号： H01S500
CPC分类号： H01S5/18361 , H01S5/3054 , H01S5/3063
摘要： This invention provides a semiconductor laser device, such as a Vertical Cavity Surface-Emitting Laser (VCSEL) device which includes a Distributed Bragg Reflector (DBR) made up of layers which are co-doped with different dopants. For instance, a p-type DBR produced by organometallic vapor-phase epitaxy (OMPVE) includes layers having, respectively, a low refractive index and a high refractive index, the layers being made, respectively, of high-Al AlGaAs and low-Al AlGaAs. According to the invention, C, by itself or in addition to Mg, is used as the dopant in the high-Al AlGaAs layers, and Mg is used in the low-Al AlGaAs layers. Because of this co-doping, the semiconductor laser device achieves low series resistance and operating voltage, with good manufacturability.
摘要翻译：本发明提供了一种半导体激光器件，例如垂直腔表面发射激光器（VCSEL）器件，其包括由与不同掺杂剂共同掺杂的层构成的分布式布拉格反射器（DBR）。例如，通过有机金属气相外延（OMPVE）制造的p型DBR分别包括分别具有低折射率和高折射率的层，分别由高Al AlGaAs和低Al AlGaAs。根据本发明，在高Al AlGaAs层中，使用本身或除了Mg之外的C，作为掺杂剂，在低Al AlGaAs层中使用Mg。由于这种共掺杂，半导体激光器件实现了低串联电阻和工作电压，具有良好的可制造性。

13. 发明授权

US07268005B2 Apparatus and method for stacking laser bars for uniform facet coating 有权
标题翻译：用于堆叠用于均匀面涂层的激光棒的装置和方法
公开(公告)号：US07268005B2
公开(公告)日：2007-09-11
申请号：US10695641
申请日：2003-10-27
申请人： John Chen , Chun Lei , Robert Shih
发明人： John Chen , Chun Lei , Robert Shih
IPC分类号： H01L21/00 , H01S3/04 , H01S3/091 , H01S3/094 , H01S3/08
CPC分类号： H01S5/4025 , H01S5/028 , H01S5/405
摘要： An apparatus for stacking photonic devices is disclosed. The apparatus can include a base, first and second spaced apart rail portions disposed on the base, and a vacuum guide disposed on the base between the rail portions for forming a vacuum gradient that pulls a plurality of photonic devices and spacer bars together into a stack. Optionally, spaced apart photonic device supports can be placed on the base between the rail portions to lift the photonic devices off of the surface of the base. The apparatus can also include a clamping system to hold the stack in place so that a vapor deposition process can be used to apply coatings to the photonic devices. In one exemplary embodiment, the photonic devices can be laser bars.
摘要翻译：公开了一种用于堆叠光子器件的装置。设备可以包括设置在基座上的底座，第一和第二间隔开的轨道部分，以及设置在轨道部分之间的底座上的真空引导件，用于形成将多个光子器件和间隔杆拉到一起的真空梯度，。可选地，间隔开的光子器件支撑件可以放置在轨道部分之间的基部上，以将光子器件提升离开基座的表面。该设备还可以包括夹持系统以将堆叠保持就位，使得可以使用气相沉积工艺将涂层施加到光子器件。在一个示例性实施例中，光子器件可以是激光条。

14. 发明授权

US06838689B1 Backside alignment and packaging of opto-electronic devices 失效
标题翻译：背光对准和封装光电器件
公开(公告)号：US06838689B1
公开(公告)日：2005-01-04
申请号：US10256054
申请日：2002-09-25
申请人： Hongyu Deng , Chun Lei
发明人： Hongyu Deng , Chun Lei
IPC分类号： G02B6/42 , H01L23/544 , H01J40/14
CPC分类号： G02B6/4249 , G02B6/4204 , G02B6/4224 , G02B6/4232 , H01L2223/54473
摘要： A die having at least one opto-electronic device disposed on a front-side of the die has its backside mounted to a submount with the backside positioned to align the front-side opto-electronic devices with respect to the submount. A first set of alignment features are formed on the backside of the die which are aligned to the front-side. The first set of a alignment features is then aligned to a second set of alignment features disposed on the submount and the backside is bounded into place.
摘要翻译：具有设置在模具的前侧上的至少一个光电装置的裸片的背面安装到底座，其后侧定位成使前侧光电装置相对于底座对准。第一组对准特征形成在与前侧对准的模具的背面上。然后将第一组对准特征对准到设置在底座上的第二组对准特征，并且背侧被限定到位。

15. 发明授权

US6069908A N-drive or P-drive VCSEL array 失效
标题翻译： N驱动或P驱动VCSEL阵列
公开(公告)号：US6069908A
公开(公告)日：2000-05-30
申请号：US20724
申请日：1998-02-09
申请人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
发明人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
IPC分类号： H01S5/00 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/187 , H01S5/42 , H01S3/19
CPC分类号： H01S5/183 , H01S5/423 , H01S5/0208 , H01S5/0422
摘要： A VCSEL that is adapted to the fabrication of an array of VCSELs. A VCSEL array according to the present invention includes first and second VCSELs for generating light of a predetermined wavelength. Each VCSEL includes a bottom reflector comprising an epitaxial layer of a semiconductor of a first conductivity type, a light generation region and a top reflector comprising a semiconductor of a second conductivity type. A bottom electrode is electrically connected to the bottom reflector, and a top electrode is electrically connected to the top reflector. The bottom electrode is grown on top of a buffer layer having an electrical conductivity less than a predetermined value and a crystalline structure that permits epitaxial growth of the bottom reflector on the buffer layer. The buffer layer may be grown on top of a substrate or be the substrate itself in the case in which a substrate having sufficiently low conductivity is utilized. The bottom reflector of each of the VCSELs is in contact with the top of the buffer layer. The first and second VCSELs are electrically isolated from one another by a trench extending into the buffer layer. The buffer layer is constructed from a material having resistivity that is sufficiently low to prevent cross-talk between the first and second VCSELs.
摘要翻译：适用于制造VCSEL阵列的VCSEL。根据本发明的VCSEL阵列包括用于产生预定波长的光的第一和第二VCSEL。每个VCSEL包括底部反射器，其包括第一导电类型的半导体的外延层，发光区域和包括第二导电类型的半导体的顶部反射器。底部电极电连接到底部反射器，并且顶部电极电连接到顶部反射器。底部电极生长在具有小于预定值的电导率的缓冲层的顶部上，并且允许底部反射器在缓冲层上外延生长的晶体结构。在使用具有足够低的导电性的基板的情况下，可以在衬底的顶部生长缓冲层或者作为衬底本身。每个VCSEL的底部反射器与缓冲层的顶部接触。第一和第二VCSEL通过延伸到缓冲层中的沟槽彼此电隔离。缓冲层由具有足够低的电阻率的材料构成，以防止第一和第二VCSEL之间的串扰。

16. 发明授权

US5517039A Semiconductor devices fabricated with passivated high aluminum-content III-V material 失效
标题翻译：用钝化的高铝含量III-V材料制造的半导体器件
公开(公告)号：US5517039A
公开(公告)日：1996-05-14
申请号：US339034
申请日：1994-11-14
申请人： Nick Holonyak, Jr. , Tim A. Richard , Mark R. Keever , Fred A. Kish , Chun Lei , Serge Rudaz
发明人： Nick Holonyak, Jr. , Tim A. Richard , Mark R. Keever , Fred A. Kish , Chun Lei , Serge Rudaz
IPC分类号： H01L33/14 , H01L33/44 , H01L33/00
CPC分类号： H01L33/44 , H01L33/14
摘要： LEDs and other semiconductor devices fabricated with III-V materials and having exposed Al-bearing surfaces passivated with native oxides are disclosed. A known high temperature water vapor oxidation process is used to passivate the exposed layers of Al-bearing III-V semiconductor materials in confined-emission spot LEDs and other light emitting devices. These devices exhibit greatly improved wet, high temperature operating life, with little to no degradation in light output when exposed to such conditions.
摘要翻译：公开了用III-V材料制造的LED和其他半导体器件，并且暴露的含Al表面被天然氧化物钝化。使用已知的高温水蒸气氧化工艺来钝化在受限发射点LED和其它发光器件中的承载III-V族的半导体材料的暴露层。这些装置显示出大大改善的湿，高温操作寿命，当暴露在这种条件下时，光输出几乎没有甚至没有劣化。

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