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    • 11. 发明授权
    • Method for fabricating nonvolatile semiconductor memory device
    • 制造非易失性半导体存储器件的方法
    • US6051465A
    • 2000-04-18
    • US126272
    • 1998-07-30
    • Junichi KatoAtsushi Hori
    • Junichi KatoAtsushi Hori
    • H01L21/336H01L21/8247
    • H01L29/66825
    • A method for fabricating a nonvolatile semiconductor memory device according to the present invention includes the steps of: forming a first mask to define a channel of a memory cell in a semiconductor substrate; doping an impurity into the semiconductor substrate by using the first mask, thereby forming a first doped region in the semiconductor substrate; forming a second mask so as to overlap at least one of a first region of the semiconductor substrate where a source is to be formed and a second region of the semiconductor substrate where a drain is to be formed and at least part of the first mask; etching the semiconductor substrate by using the first and second masks, thereby forming a recessed portion in a region of the semiconductor substrate that is not covered with the first and second masks; forming a second doped region in the recessed portion of the semiconductor substrate; and removing the first and second masks, and forming a gate structure including a first insulating film, a floating gate electrode, a second insulating film and a control gate electrode at least over a side surface of the recessed portion and the channel defined by the first mask.
    • 根据本发明的制造非易失性半导体存储器件的方法包括以下步骤:形成第一掩模以限定半导体衬底中的存储单元的沟道; 通过使用第一掩模将杂质掺杂到半导体衬底中,从而在半导体衬底中形成第一掺杂区; 形成第二掩模,以便与要形成源极的半导体衬底的第一区域和要形成漏极的半导体衬底的第二区域和第一掩模的至少一部分中的至少一个重叠; 通过使用第一和第二掩模蚀刻半导体衬底,从而在未被第一和第二掩模覆盖的半导体衬底的区域中形成凹陷部分; 在所述半导体衬底的凹陷部分中形成第二掺杂区域; 以及去除第一和第二掩模,并且至少在凹部的侧表面上形成包括第一绝缘膜,浮栅电极,第二绝缘膜和控制栅电极的栅结构,以及由第一绝缘膜, 面具。
    • 13. 发明授权
    • Electro-magnetically shielded door hinge
    • 电磁屏蔽门铰链
    • US5691503A
    • 1997-11-25
    • US332627
    • 1994-10-31
    • Junichi Kato
    • Junichi Kato
    • E05D1/06H02B1/38H05K9/00
    • H02B1/38H05K9/0073E05D1/06E05Y2900/208E05Y2900/606
    • An electro-magnetically shielded metallic enclosure is provided with a novel hinge structure. The enclosure has a plurality of side panels and at least one access door hinged to one of the side panels by a plurality of shielded hinges. Each such hinge has three principal elements: a metallic tab, an elongated slot for receiving and supporting the metallic tab, and a raised metal arch bridging the central portion of the elongated slot. The metallic tab is integrally formed on one edge of the access door and is designed to slide into an elongated slot located in an adjacent side panel to provide support for pivoting the metallic tab and the connected door in a hinged relationship. To prevent EMR from otherwise leaking through the elongated slot, a raised metal arch is provided on the interior of the enclosure bridging the central portion of the slot. The arch is spaced apart from the inner surface of the side panel to permit the free end of the metallic tab to freely rotate when the access door is swung open and closed.
    • 具有电磁屏蔽的金属外壳设有新的铰链结构。 外壳具有多个侧板和通过多个屏蔽铰链铰接到一个侧板的至少一个通道门。 每个这样的铰链具有三个主要元件:金属片,用于接收和支撑金属片的细长槽和桥接细长槽的中心部分的凸起金属拱。 金属突片一体地形成在通道门的一个边缘上,并被设计成滑动到位于相邻侧板中的细长槽中,以提供支撑,以铰链关系枢转金属接头和连接的门。 为了防止EMR以其他方式泄漏通过细长槽,凸起的金属拱形件设置在外壳的内部,桥接在槽的中心部分。 拱形件与侧板的内表面间隔开,以允许金属接头的自由端在进出门被打开和关闭时自由旋转。
    • 18. 发明授权
    • Dielectric ceramic compositions
    • 介电陶瓷组合物
    • US4751209A
    • 1988-06-14
    • US917673
    • 1986-10-10
    • Yoichirou YokotaniJunichi KatoHiromu Ouchi
    • Yoichirou YokotaniJunichi KatoHiromu Ouchi
    • C04B35/499H01G4/12C04B35/46
    • H01G4/1263C04B35/499
    • Dielectric ceramic composition consisting essentially of substance selected from those represented by the following formulas:(1) Pb.sub.a (Mg.sub.1/3 Nb.sub.2/3).sub.x Ti.sub.y (Ni.sub.1/2 W.sub.1/2).sub.z O.sub.2+a(2) Pb.sub.a Ca.sub.b (Mg.sub.1/3 Nb.sub.2/3).sub.x Ti.sub.y (Ni.sub.1/2 W.sub.1/2).sub.z O.sub.2+a+b(3) Pb.sub.a Ba.sub.b (Mg.sub.1/3 Nb.sub.2/3).sub.x Ti.sub.y (Ni.sub.1/2 W.sub.1/2).sub.z O.sub.2+a+b(4) Pb.sub.a Sr.sub.b (Mg.sub.1/3 Nb.sub.2/3).sub.x Ti.sub.y (Ni.sub.1/2 W.sub.1/2).sub.z O.sub.2+a+bwherein x+y+z=1.00, and a or a+b.gtoreq.1.001.These compositions can be sintered below 1080.degree. C. in low partial pressure of oxygen of about 1.times.10.sup.-8, and exhibit a high dielectric constant and a high electrical resistivity.
    • 介电陶瓷组合物,主要由选自下式表示的物质组成:(1)Pba(Mg1 / 3Nb2 / 3)xTiy(Ni1 / 2W1 / 2)zO2 + a(2)PbaCab(Mg1 / 3Nb2 / 3)xTiy (Ni1 / 2W1 / 2)zO2 + a + b(3)PbaBab(Mg1 / 3Nb2 / 3)xTiy(Ni1 / 2W1 / 2)zO2 + a + b(4)PbaSrb(Mg1 / 3Nb2 / 3)xTiy / 2W1 / 2)zO2 + a + b其中x + y + z = 1.00,a或a + b> / = 1.001。 这些组合物可以在低于1080℃的约1×10 -8的低分压下烧结,并且表现出高介电常数和高电阻率。