会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 12. 发明申请
    • NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND DATA WRITING METHOD THEREFOR
    • 非易失性半导体存储器件及其数据写入方法
    • US20090207647A1
    • 2009-08-20
    • US12370111
    • 2009-02-12
    • Hiroshi MAEJIMAKatsuaki IsobeHideo Mukai
    • Hiroshi MAEJIMAKatsuaki IsobeHideo Mukai
    • G11C11/00G11C7/00G11C11/416
    • G11C13/0007G11C7/00G11C13/0004G11C13/0011G11C13/0064G11C13/0069G11C2013/009G11C2213/31G11C2213/56G11C2213/71G11C2213/72
    • A nonvolatile semiconductor storage device comprises: a first wire and a second wire intersecting each other; a memory cell which is disposed at each intersection of the first wire and the second wire and electrically rewritable and in which a variable resistor for memorizing a resistance value as data in a nonvolatile manner and a rectifying device are connected in series; and a control circuit which applies a voltage necessary for writing of data to the first and second wires. The control circuit precharges a non-selected second wire up to a standby voltage larger than a reference voltage prior to a set operation for programming only a variable resistor connected to selected first and second wires by supplying the reference voltage to a non-selected first wire and the selected second wire, applying a program voltage necessary for programming of the selected variable resistor based on the reference voltage to the selected first wire and applying a control voltage which prevents the rectifying device from turning ON based on the program voltage to the non-selected second wire.
    • 非易失性半导体存储装置包括:第一线和彼此交叉的第二线; 存储单元,其配置在所述第一配线和所述第二配线的各交叉点并且是电可重写的,并且其中存储用作非易失性数据的电阻值的可变电阻器和整流装置串联连接; 以及控制电路,其向第一和第二导线施加写入数据所需的电压。 控制电路在设置操作之前将未选择的第二线预充电到大于参考电压的待机电压,以仅通过将参考电压提供给未选择的第一线来仅编程连接到所选择的第一和第二线的可变电阻器 和所选择的第二线路,基于参考电压将所选择的可变电阻器编程所需的编程电压施加到所选择的第一线路,并施加防止整流装置导通的控制电压, 选择第二根线。
    • 15. 发明授权
    • Laser irradiation method for laser treatment and laser treatment apparatus
    • 激光治疗和激光治疗仪的激光照射方法
    • US06585725B1
    • 2003-07-01
    • US09692319
    • 2000-10-20
    • Hideo Mukai
    • Hideo Mukai
    • A61F9007
    • A61B18/203A61B2018/00452A61B2018/2025A61B2018/20359
    • Disclosed are a laser irradiation method for laser treatment performed by irradiating a treatment part of a patient with a treatment laser beam and a laser treatment apparatus for practicing the method. The method includes the steps of: setting a shape and size of an irradiation area to be irradiated with the laser beam; determining a scanning sequence of beam spots based on the shape and size of the irradiation area set in the setting step, a spot diameter of the laser beam, and a predetermined rule; and performing laser irradiation to the beam spots within the irradiation area in accordance with the scanning sequence determined in the determining step, wherein the predetermined rule is a rule that the beam spots continuously irradiated with the laser beam become nonadjacent and scanning lines continuously irradiated become nonadjacent.
    • 公开了通过用治疗激光束照射患者的治疗部分和实施该方法的激光治疗装置进行激光治疗的激光照射方法。 该方法包括以下步骤:设置要用激光束照射的照射区域的形状和尺寸; 基于在设定步骤中设定的照射区域的形状和尺寸,激光束的光点直径和预定规则来确定光束斑点的扫描顺序; 并且根据在确定步骤中确定的扫描顺序对照射区域内的光束点进行激光照射,其中预定规则是连续照射激光束的光束点变得不相邻并且连续照射的扫描线变得不相邻的规则 。
    • 17. 发明授权
    • Laser treatment apparatus
    • 激光治疗仪
    • US5971978A
    • 1999-10-26
    • US132236
    • 1998-08-11
    • Hideo Mukai
    • Hideo Mukai
    • A61B17/00A61B18/00A61B18/20A61N5/06A61B17/36
    • A61B18/203A61B18/201A61B2017/00199A61B2018/00452A61B2018/2025A61B2218/008
    • A laser treatment apparatus which irradiates a laser beam produced by a treatment laser source to an area of treatment, the apparatus comprises an irradiation condition setting device which sets irradiation conditions of the laser beam, such as an irradiation area, a laser scanning device provided with a plurality of reflectors including at least a reflector which is continuously rotated in a predetermined direction by a motor to perform a laser two-dimensional scanning on the treatment area, a scanning controller which controls the operation of the laser scanning device, and an irradiation controller which controls the laser source to turn on and off the laser beam depending on the irradiation conditions in correspondence with the operation of the laser scanning device.
    • 一种激光治疗装置,其将由治疗激光源产生的激光束照射到治疗区域,该装置包括:照射条件设定装置,其设定诸如照射区域的激光束的照射条件,设置有激光扫描装置 多个反射器,至少包括通过马达在预定方向上连续地旋转的反射器,以对处理区域进行激光二维扫描;控制激光扫描装置的操作的扫描控制器;以及照射控制器 其根据与激光扫描装置的操作对应的照射条件来控制激光源打开和关闭激光束。
    • 18. 发明授权
    • Developing apparatus
    • 开发设备
    • US4407228A
    • 1983-10-04
    • US308791
    • 1981-10-05
    • Toshimasa TakanoHideo MukaiMasahiro Hosoya
    • Toshimasa TakanoHideo MukaiMasahiro Hosoya
    • G03G15/08G03G15/06
    • G03G15/0805
    • A developing apparatus is used with an image forming system provided with a photosensitive layer on which a static latent image is impressed and which is formed of first and second portions having different surface potentials. The developing apparatus comprising a developing roller which is rotatably arranged and fitted with a large number of hairs for feeding a developing agent such as a toner to the surface of the photosensitive layer in contact therewith. The developing agent is attracted to the first portion of the surface of the photosensitive layer with a strong attractive force and to the second portion of the surface with a weak attractive force. The developing apparatus further comprises electrode tube for removing that portion of the developing agent which is attracted to the second portion with the weak attractive force.
    • 使用具有感光层的图像形成系统的显影装置,静电潜像被印刷在该感光层上,并且由具有不同表面电位的第一和第二部分形成。 显影装置包括显影辊,该显影辊可旋转地布置并装配有用于将感光层的表面与显影剂(例如调色剂)进行接触的大量毛发。 显影剂以很强的吸引力被吸引到感光层的表面的第一部分,并且以弱的吸引力吸引到表面的第二部分。 显影装置还包括用于去除以弱吸引力吸引到第二部分的显影剂的那部分的电极管。
    • 20. 发明授权
    • Nonvolatile semiconductor storage device and data writing method therefor
    • 非易失性半导体存储器件及其数据写入方法
    • US08379432B2
    • 2013-02-19
    • US13415953
    • 2012-03-09
    • Hiroshi MaejimaKatsuaki IsobeHideo Mukai
    • Hiroshi MaejimaKatsuaki IsobeHideo Mukai
    • G11C11/00
    • G11C13/0007G11C7/00G11C13/0004G11C13/0011G11C13/0064G11C13/0069G11C2013/009G11C2213/31G11C2213/56G11C2213/71G11C2213/72
    • A nonvolatile semiconductor storage device includes first and second intersecting wires; a electrically rewritable memory cell disposed at each intersection of the first second wires, including a variable resistor for memorizing a resistance value as data in a nonvolatile manner and a rectifying device are connected in series; and a control circuit which applies a voltage necessary for writing of data to the first and second wires. The control circuit precharges a non-selected second wire to a standby voltage larger than a reference voltage prior to programming a variable resistor connected to selected first and second wires by supplying the reference voltage to a non-selected first wire and the selected second wire, applying to the selected first wire a program voltage for programming of the selected variable resistor and applying to the non-selected second wire a control voltage which prevents the rectifying device from turning ON.
    • 非易失性半导体存储装置包括第一和第二相交线; 在第一第二配线的交点处配置的电可重写存储单元串联连接,包括用于以非易失性方式存储电阻值作为数据的可变电阻器和整流装置; 以及控制电路,其向第一和第二导线施加写入数据所需的电压。 在通过将参考电压提供给未选择的第一线和所选择的第二线之前,控制电路将未选择的第二线预充电至大于参考电压的待机电压,然后再对连接到所选择的第一和第二线的可变电阻进行编程, 向所选择的第一线施加用于对所选择的可变电阻器进行编程的编程电压,并向未选择的第二线施加防止整流装置导通的控制电压。