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11. 发明授权

US5767025A Composite powder comprising silicon nitride and silicon carbide 失效
标题翻译：包含氮化硅和碳化硅的复合粉末
公开(公告)号：US5767025A
公开(公告)日：1998-06-16
申请号：US625043
申请日：1996-03-29
申请人： Kazumi Miyake , Kagehisa Hamazaki , Hitoshi Toyoda , Yoshikatsu Higuchi
发明人： Kazumi Miyake , Kagehisa Hamazaki , Hitoshi Toyoda , Yoshikatsu Higuchi
IPC分类号： C01B21/068 , C04B35/575 , C04B35/591 , C04B35/593 , C04B35/565 , C04B35/584
CPC分类号： C04B35/593 , C01B21/068 , C04B35/575 , C04B35/591 , C04B35/5935 , C01P2004/03 , C01P2004/61 , C01P2004/62 , C01P2006/10 , C01P2006/12
摘要： A composite sintered body of silicon nitride and silicon carbide is manufactured by sintering a composite powder or green body of silicon nitride and silicon carbide in a nitrogen gas atmosphere. The composite powder having a percentage of .alpha.-silicon nitride which is at least 30% based on all silicon nitride is produced by mixing a silicon powder with a carbonaceous powder and a sintering aid powder, and heat-treating the resultant mixed powder in a nitrogen-containing atmosphere at a temperature of 1,450.degree. C. or lower thereby nitriding and carbonizing silicon contained in the mixed powder to produce a composite powder, a temperature elevation speed being less than 2.degree. C./minute. The composite green body having a percentage of .alpha.-silicon nitride which is at least 30% based on all silicon nitride is produced by mixing a silicon powder, a carbonaceous powder and a sintering aid powder, molding the resultant mixed powder into a green body, and heat-treating the resultant green body in a nitrogen-containing atmosphere at a temperature of 1,450.degree. C. or lower thereby nitriding and carbonizing silicon contained in the green body, a temperature elevation speed being less than 2.degree. C./minute.
摘要翻译：通过在氮气气氛中烧结氮化硅和碳化硅的复合粉末或生坯体来制造氮化硅和碳化硅的复合烧结体。通过将硅粉末与碳质粉末和烧结助剂粉末混合，并将所得混合粉末在氮气中进行热处理，得到具有基于所有氮化硅的至少30％的α-氮化硅百分比的复合粉末在1450℃或更低的温度下进行氮化和碳化混合粉末中的硅以产生复合粉末，升温速度小于2℃/分钟。通过将硅粉末，碳质粉末和烧结助剂粉末混合，将所得混合粉末成型为生坯，制备具有基于所有氮化硅的至少30％的α-氮化硅百分比的复合生坯，并在1450℃或更低的含氮气氛中对生成的生坯进行热处理，从而使包含在生坯中的硅氮化和碳化，升温速度小于2℃/分钟。

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